IRF IRHM7264SE Simple drive requirement Datasheet

PD-91393F
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
IRHM7264SE
JANSR2N7434
250V, N-CHANNEL
REF: MIL-PRF-19500/661
®
™
RAD Hard HEXFET TECHNOLOGY
Product Summary
Part Number
IRHM7264SE
Radiation Level
100K Rads (Si)
RDS(on)
0.11Ω
ID
QPL Part Number
31A
JANSR2N7434
TO-254AA
International Rectifier’s RADHardTM HEXFET® MOSFET
technology provides high performance power MOSFETs
for space applications. This technology has over a
decade of proven performance and reliability in satellite
applications. These devices have been characterized
for both Total Dose and Single Event Effects (SEE). The
combination of low RDS(on) and low gate charge reduces
the power losses in switching applications such as DC to
DC converters and motor control. These devices retain
all of the well established advantages of MOSFETs such
as voltage control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
ESD Rating: Class 3B per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
31
19
124
250
2.0
±20
500
31
25
2.5
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 (0.063 in. (1.6mm) from case for 10 sec.)
9.3 (Typical)
g
For footnotes, refer to the last page
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1
09/04/14
IRHM7264SE, JANSR2N7434
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
BVDSS
Parameter
Min
Drain-to-Source Breakdown Voltage
250
—
—
V
—
0.32
—
V/°C
—
—
2.5
10
—
—
—
—
—
—
—
—
0.110
0.123
4.5
—
50
250
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
100
-100
210
50
110
30
130
100
90
—
∆BV DSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Typ Max Units
Ω
V
S
µA
nA
nC
ns
nH
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
VGS = 12V, ID = 19A
Ã
VGS = 12V, ID = 31A
VDS = VGS, ID = 1.0mA
VDS = 15V, IDS = 19A Ã
VDS = 200V ,VGS = 0V
VDS = 200V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 31A
VDS = 125V
VDD = 125V, ID = 31A,
VGS =12V, RG = 2.35Ω
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
4000
1300
480
—
—
—
pF
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
—
—
—
—
31
124
A
VSD
trr
Q RR
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
1.4
700
16
V
ns
µC
ton
Forward Turn-On Time
Test Conditions
Tj = 25°C, IS = 31A, VGS = 0V Ã
Tj = 25°C, IF = 31A, di/dt ≤ 100A/µs
VDD ≤ 50V Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthCS
RthJA
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Min Typ M a x Units
—
—
—
— 0.50
0.21 —
—
48
Test Conditions
°C/W
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes, refer to the last page
2
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Pre-Irradiation
IRHM7264SE, JANSR2N7434
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
100 kRads (Si)
Min
Max
Units
Test Conditions
V
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source „
On-State Resistance (TO-3)
Static Drain-to-Source „
250
2.0
—
——
—
4.5
100
100
50
µA
VGS = 0V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20V
VDS = 200V, VGS = 0V
—
0.11
Ω
VGS = 12V, ID = 19A
On-State Resistance (TO-254)
—
0.11
Ω
VGS = 12V, ID = 19A
1.4
V
VGS = 0V, ID = 31A
Diode Forward Voltage
„
—
nA
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
Ion
Cu
Br
LET
MeV/(mg/cm2)
28
36.8
Energy
(MeV)
285
305
Range
VDS (V)
(µm)
@VGS= 0V @VGS= -5V @VGS= -10V @VGS= -15V
43
250
250
250
250
39
250
250
250
225
@VGS= -20V
250
210
300
250
VDS
200
Cu
150
Br
100
50
0
0
-5
-10
-15
-20
VGS
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes, refer to the last page
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3
IRHM7264SE, JANSR2N7434
1000
Pre-Irradiation
1000
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
100
100
10
1
0.1
5.0V
1
10
10
5.0V
20µs PULSE WIDTH
TJ = 25 °C
0.01
0.1
1
0.1
100
3.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
100
TJ = 150 ° C
10
TJ = 25 ° C
1
V DS = 50V
20µs PULSE WIDTH
6
7
8
9
10
11
12
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
1
10
100
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
5
20µs PULSE WIDTH
TJ = 150 °C
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
0.1
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
ID = 31A
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 12V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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Pre-Irradiation
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
6000
Ciss
4000
Coss
2000
0
Crss
1
10
20
VGS , Gate-to-Source Voltage (V)
C, Capacitance (pF)
8000
IRHM7264SE, JANSR2N7434
VDS = 125V
16
12
8
4
0
100
VDS , Drain-to-Source Voltage (V)
ID = 31A
FOR TEST CIRCUIT
SEE FIGURE 13
0
80
120
160
200
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
1000
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
40
100
TJ = 150 ° C
10
TJ = 25 ° C
1
0.2
V GS = 0 V
0.6
1.0
1.4
1.8
2.2
2.6
3.0
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
100µs
10
1ms
10ms
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
3.4
1
DC
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
IRHM7264SE, JANSR2N7434
Pre-Irradiation
35
VGS
ID , Drain Current (A)
30
RG
25
D.U.T.
+
-V DD
VGS
20
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
15
Fig 10a. Switching Time Test Circuit
10
VDS
5
0
RD
VDS
90%
25
50
75
100
125
TC , Case Temperature ( ° C)
150
10%
VGS
td(on)
Fig 9. Maximum Drain Current Vs.
Case Temperature
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
1
0.50
0.1
0.01
0.20
0.10
0.05
0.02
0.01
0.001
0.00001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHM7264SE, JANSR2N7434
15V
L
VDS
D.U.T.
RG
VGS
20V
IAS
DRIVER
+
- VDD
0.01Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
A
EAS , Single Pulse Avalanche Energy (mJ)
1000
TOP
800
BOTTOM
ID
14.A
20.A
31A
600
400
200
0
25
50
75
100
125
Starting TJ , Junction Temperature ( °C)
150
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
QG
12 V
QGS
.3µF
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
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12V
.2µF
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
7
IRHM7264SE, JANSR2N7434
Pre-Irradiation
Footnotes:
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with VGS Bias.
À Repetitive Rating; Pulse width limited by
maximum junction temperature.
Á VDD = 50V, starting TJ = 25°C, L =1.0 mH
Peak IL = 31A, VGS = 12V
 ISD ≤ 31A, di/dt ≤ 300A/µs,
VDD ≤ 250V, TJ ≤ 150°C
12 volt VGS applied and V DS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Å Total Dose Irradiation with V DS Bias.
200 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions —TO-254AA
0.12 [.005]
13.84 [.545]
13.59 [.535]
3.78 [.149]
3.53 [.139]
6.60 [.260]
6.32 [.249]
A
20.32 [.800]
20.07 [.790]
17.40 [.685]
16.89 [.665]
1
C
2
2X
B
3
14.48 [.570]
12.95 [.510]
3X
3.81 [.150]
13.84 [.545]
13.59 [.535]
1.27 [.050]
1.02 [.040]
0.84 [.033]
MAX.
1.14 [.045]
0.89 [.035]
0.36 [.014]
3.81 [.150]
B A
NOT ES :
1.
2.
3.
4.
DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
CONTROLLING DIMENSION: INCH.
CONFORMS TO JEDEC OUTLINE TO-254AA.
PIN ASSIGNMENTS
1 = DRAIN
2 = SOURCE
3 = GATE
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that
will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 09/2014
8
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