Dynex DCR1275SD23 Phase control thyristor Datasheet

DCR1275SD
DCR1275SD
Phase Control Thyristor
Advance Information
Replaces March 1998 version, DS4551-3.3
DS4551-4.0 January 2000
KEY PARAMETERS
VDRM
2800V
IT(AV)
1514A
ITSM
28000A
dVdt*
300V/µs
dI/dt
150A/µs
APPLICATIONS
■ High Power Drives
■ High Voltage Power Supplies
■ DC Motor Control
FEATURES
*Higher dV/dt selections available
■ Double Side Cooling
■ High Surge Capability
■ High Mean Current
■ Fatigue Free
VOLTAGE RATINGS
Type Number
Repetitive Peak
Voltages
VDRM VRRM
V
Conditions
2800
2700
2600
2500
2400
Tvj = 0˚ to 125˚C,
IDRM = IRRM = 150mA,
VDRM, VRRM tp = 10ms,
VDSM & VRSM =
VDRM & VRRM + 100V
respectively
DCR1275SD28
DCR1275SD26
DCR1275SD25
DCR1275SD24
DCR1275SD23
Lower voltage grades available.
Outline type code: D.
See Package Details for further information.
CURRENT RATINGS
Tcase = 60˚C unless stated otherwise.
Symbol
Parameter
Conditions
Max.
Units
1514
A
Double Side Cooled
Half wave resistive load
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
2379
A
Continuous (direct) on-state current
-
2148
A
1047
A
IT
Single Side Cooled (Anode side)
Half wave resistive load
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
1645
A
Continuous (direct) on-state current
-
1386
A
IT
1/9
DCR1275SD
CURRENT RATINGS
Tcase = 80˚C unless stated otherwise.
Symbol
Parameter
Conditions
Max.
Units
1185
A
Double Side Cooled
Half wave resistive load
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
1860
A
Continuous (direct) on-state current
-
1640
A
805
A
IT
Single Side Cooled (Anode side)
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
1265
A
Continuous (direct) on-state current
-
1035
A
IT
Half wave resistive load
SURGE RATINGS
Parameter
Symbol
ITSM
I2t
ITSM
I2t
Surge (non-repetitive) on-state current
I2t for fusing
Surge (non-repetitive) on-state current
Conditions
Max.
Units
10ms half sine; Tcase = 125oC
22.5
kA
VR = 50% VRRM - 1/4 sine
2.53 x 106
A2s
10ms half sine; Tcase = 125oC
28.0
kA
VR = 0
3.92 x 106
A2s
I2t for fusing
THERMAL AND MECHANICAL DATA
Min.
Max.
Units
dc
-
0.020
o
Anode dc
-
0.036
o
Cathode dc
-
0.044
o
Double side
-
0.004
o
Single side
-
0.008
o
On-state (conducting)
-
135
o
Reverse (blocking)
-
125
o
Storage temperature range
-55
125
o
Clamping force
20.0
24.0
Parameter
Symbol
Conditions
Double side cooled
Rth(j-c)
Thermal resistance - junction to case
C/W
C/W
Single side cooled
Rth(c-h)
Tvj
Tstg
-
2/9
Thermal resistance - case to heatsink
Clamping force 22.0kN
with mounting compound
C/W
C/W
C/W
C
Virtual junction temperature
C
C
kN
DCR1275SD
DYNAMIC CHARACTERISTICS
Symbol
Parameter
Conditions
Typ.
Max.
Units
Peak reverse and off-state current
At VRRM/VDRM, Tcase = 125oC
-
150
mA
dV/dt
Maximum linear rate of rise of off-state voltage
To 67% VDRM Tj = 125oC.
-
300
V/µs
-
100
A/µs
Rate of rise of on-state current
From 67% VDRM to 1000A
Gate source 10V, 5Ω
tr = 1µs, Tj = 125oC
Repetitive 50Hz
dI/dt
Non-repetitive
-
150
A/µs
IRRM/IDRM
Threshold voltage
At Tvj = 125oC
-
0.92
V
rT
On-state slope resistance
At Tvj = 125oC
-
0.276
mΩ
tgd
Delay time
VD = 67% VDRM, Gate source 30V, 15Ω
tr = 0.5µs, Tj = 25oC
-
1.5
µs
tq
Turn-off time
IT = 1000A, tp = 1ms, Tj = 125˚C,
VR = 50V, dIRR/dt = 20A/µs,
VDR = 67% VDRM, dVDR/dt = 20V/µs linear
500
650
µs
IL
Latching current
Tj = 25oC, VD = 5V
300
1000
mA
IH
Holding current
Tj = 25oC, Rg-k = ∞
200
500
mA
Max.
Units
VT(TO)
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
Conditions
VGT
Gate trigger voltage
VDRM = 5V, Tcase = 25oC
4.0
V
IGT
Gate trigger current
VDRM = 5V, Tcase = 25oC
400
mA
VGD
Gate non-trigger voltage
At VDRM Tcase = 125oC
0.25
V
VFGM
Peak forward gate voltage
Anode positive with respect to cathode
30
V
VFGN
Peak forward gate voltage
Anode negative with respect to cathode
0.25
V
VRGM
Peak reverse gate voltage
5
V
IFGM
Peak forward gate current
Anode positive with respect to cathode
10
A
PGM
Peak gate power
See table, fig.4
100
W
PG(AV)
Mean gate power
5
W
3/9
DCR1275SD
CURVES
5000
Measured under pulse conditions
Instantaneous on-state current, IT - (A)
4000
3000
Tj = 125˚C
2000
1000
0
0.5
1.0
1.5
2.0
Instantaneous on-state voltage, VT - (V)
Fig.1 Maximum (limit) on-state characteristics
4/9
2.5
DCR1275SD
4000
d.c.
Half wave
3 phase
6 phase
Mean power dissipation - (W)
3000
2000
1000
0
0
500
1000
1500
Mean on-state current IT(AV) - (A)
G
SS
O C
Fig.2 Dissipation curves
2000
2500
S
5/9
DCR1275SD
100
Gate trigger voltage, VGT - (V)
VFGM
10
Table gives pulse power PGM in Watts
Pulse width
µs
100
200
500
1ms
10ms
Pulse frequency Hz
400
100
50
150
150 150
125
150 150
100
150 150
25
150 100
20
100W
50W
20W
10W
5W
2W
Tj = 25˚C
9%
it 9
lim
per
Tj = 125˚C
Up
Tj = -40˚C
1
r limit
Lowe
0.1
0.001
0.01
1%
0.1
Gate trigger current, IGT - (A)
1
10
IFGM
Fig.3 Gate characteristics
1.0
Thermal impedance - (˚C/W)
Conduction
d.c.
Halfwave
3 phase 120˚
6 phase 60˚
Effective thermal resistance
Junction to case ˚C/W
Anode side
Double side
0.036
0.020
0.038
0.022
0.040
0.024
0.043
0.027
0.1
Anode side cooled
Double side cooled
0.01
0.001
0.001
0.01
0.1
Time - (s)
1
Fig.4 Maximum (limit) transient thermal impedance - junction to case
6/9
10
DCR1275SD
I2t = Î2 x t
2
40
30
4.0
20
3.0
I2t
10
0
1
2.0
10
1
2
ms
3 45
I2t value - (A2s x 106)
Peak half sine wave on-state current - (kA)
50
1.0
50
Cycles at 50Hz
Duration
Fig.5 Surge (non-repetitive) on-state current vs time (with 50% VRRM @ Tcase = 125˚C)
7/9
DCR1275SD
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
2 holes Ø3.6 x 2.1 deep (One each side)
Cathode tab
Cathode
Ø76 max
Ø48 nom
27.0
25.4
Ø2.8
Gate
Ø48 nom
Anode
Nominal weight: 500g
Clamping force: 22kN ±10%
Lead length: 420mm
Lead terminal connector: M4 ring
Package outine type code: D
ASSOCIATED PUBLICATIONS
Title
Application Note
Number
Calculating the junction temperature or power semiconductors
AN4506
Gate triggering and the use of gate characteristics
AN4840
Recommendations for clamping power semiconductors
AN4839
The effect of temperature on thyristor performance
AN4870
Thyristor and diode measurement with a multi-meter
AN4853
Turn-on performance of thyristors in parallel
AN4999
Use of V , r on-state characteristic
AN5001
TO
8/9
T
DCR1275SD
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the
voltage and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
solution (PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of preloaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm
Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839
HEATSINKS
Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the
factory.
http://www.dynexsemi.com
e-mail: [email protected]
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
Unit 7 - 58 Antares Drive,
Nepean, Ontario, Canada K2E 7W6.
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
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SALES OFFICES
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UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2000 Publication No. DS4551-4 Issue No. 4.0 January 2000
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations:
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Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
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