Eudyna FLL21E090IY L,s-band high power gaas fet Datasheet

FLL21E090IY
L,S-band High Power GaAs FET
FEATURES
・High Voltage Operation (VDS=28V) GaAs FET
・High Gain: 15.5dB(typ.) at Pout=43dBm(Avg.)
・Broad Frequency Range : 2110 to 2170MHz
・High Reliability
DESCRIPTION
The FLL21E090IY is a high power GaAs FET that offers high efficiency,
ease of matching, greater consistency and broad bandwidth for high
power L-band amplifiers. This device is targeted for high voltage, low
current operation in digitally modulated base station amplifiers. This
product is ideally suited for W-CDMA and Multi-carrier PCS base station
amplifiers while offering high gain, long term reliability and ease of use.
ABSOLUTE MAXIMUM RATING
Item
Symbol
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
VDS
VGS
PT
T stg
T ch
Rating
Unit
32
-3
134
65 to +175
200
V
V
W
o
C
o
C
Limit
Unit
<28
<352
>-31
155
V
mA
mA
o
C
Condition
o
T C=25 C
(Case Tem perature)
o
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25 C)
Item
Symbol
DC Input Voltage
Forward Gate Current
Reverse Gate Current
Channel Temperature
VDS
IGF
IGR
T ch
Condition
RG=2Ω
RG=2Ω
o
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25 C)
Item
Symbol
Pinch-Off Voltage
Gate-Source Breakdown Voltage
3rd Order Intermodulation Distortion
Power Gain
Drain Efficiency
VP
VGSO
IM 3
GP
ηD
Adjacent Channel Leakage Power Ratio
Themal Resistance
ACLR
Rth
Condition
VDS=5V, IDS=151mA
IGS=-1.51mA
VDS=28V
IDS(DC)=750mA
Pout=43dBm(Avg.)
Note 1
Channel to Case
Limit
Min.
-0.1
-5
14.5
-
Typ.
-0.2
-33
15.5
26
Max.
-0.5
-30
-
-
-35
1.1
1.3
Unit
V
V
dBc
dB
%
dBc
C/W
o
Note 1 : IM3, ACLR and Gain test conditions as follows
IM3 & Gain : f 0=2.1325GHz, f 1=2.1475GHz W-CDMA(3GPP3.4 12-0) BS-1 64ch non clipping modulation measured over 3.84MHz at f 0-15MHz and f 1+15MHz.
ACLR : f 0=2.1325GHz W-CDMA (3GPP3.4 12-00) BS-1 64ch non clipping modulation, measured over 3.84MHz at f 0+/-5MHz
CLASS III
ESD
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5k Ω)
CASE STYLE : IY
Edition 1.1
June 2004
1
2000V ~
FLL21E090IY
L,S-band High Power GaAs FET
Output Power & Drain Efficiency vs. Input Power
VDS=28V, IDS=750mA, f=2.14GHz
52
100
50
90
2.1
2.12
2.14
2.16
2.18
2.2
Frequency [GHz]
46
Pin=26dBm
Pin=34dBm
Pin=38dBm
60
42
50
40
40
38
30
ηd
36
20
34
10
32
0
22 24
Pin=30dBm
26 28
30
32 34
36 38
40
Input Pow er [dBm ]
Single-Carrier ACLR vs. Output Power
VDS=28V IDS=750mA fo=2.1325GHz
W-CDMA 3GPP BS-1 64ch Modulation
Two-Carrier IMD(ACLR) vs. Output Power
VDS=28V IDS=750mA fo=2.1325, f1=2.1475GHz
W-CDMA 3-GPP BS-1 64ch Modulation
35
-25
35
-30
30
-30
30
-35
25
-35
25
-40
20
-40
20
-45
15
-45
15
-50
10
-50
10
-55
5
-55
5
-60
ACLR[dBc]
-25
Drain Efficiency[%]
IMD[dBc]
70
44
20
Pin=22dBm
80
P out
0
-60
0
26 28 30 32 34 36 38 40 42 44 46
26 28 30 32 34 36 38 40 42 44 46
Output Power[dBm]
Output Power[dBm]
IM3
IM5
Drain Efficiency
+/-5MHz
2
+/-10MHz
Drain Efficiency
Drain Efficiency [%]
48
Drain Efficiency[%]
52
50
48
46
44
42
40
38
36
34
32
30
2.08
Output Power [dBm]
Output Power [dBm]
Output Power vs. Frequency
VDS=28V, IDS=750mA
FLL21E090IY
L,S-band High Power GaAs FET
CW IMD vs. Tone Spacing
@VDS=28V, IDS=750mA, fc=2.14GHz
Pout=43dBm
-20
-25
ΔIM3[dBc]
-30
-35
-40
-45
-50
-55
-60
0.1
1
10
100
Tw o-Tone Spacing[MHz]
3
FLL21E090IY
L,S-band High Power GaAs FET
■Board Layout
VGS
C11
C14 C13
R2
C17
C16
C15
C10
VDS
C18
C12
R1
C1
C3
C2
C5 C6 C7
C4
L1
C8
C9x5
εr=3.5 t=0.8mm
■ Circuit Diagram of the Board
C14 C13C12 C11 C10
C15 C16 C18
C17
R2
Z8
Z5
Z6
Z2
Z1
C1
Z3
C3
R1
Z4
C8
Z7
Z9
C2
L1
C5
C4
Z11
Z10
C6
C7
C9x5
Z1, Z11
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
9.00mm x 1.78mm Transmission Line
26.2mm x 1.78mm Transmission Line
6.60mm x 1.78mm Transmission Line
6.00mm x 13.0mm Transmission Line
23.0mm x 0.50mm Transmission Line
3.00mm x 25.0mm Transmission Line
3.00mm x 13.0mm Transmission Line
23.0mm x 1.50mm Transmission Line
10.8mm x 1.78mm Transmission Line
22.0mm x 1.78mm Transmission Line
C1,C2
10pF
C3
1.0pF
C4
2.0pF
C5,C6,C7 0.5pF
C8
1.5pF
C9
0.1uF
C10,C15 20pF
C11,C16 100nF
C12,C17 1000pF
C13,C14 10uF
4
C18
L1
R1
R2
22uF
3.3nF
2.0ohm
51ohm
Board
input size εr=3.5 t=0.8mm
50mm x 50mm
output size εr=3.5 t=0.8mm
50mm x 50mm
FLL21E090IY
L,S-band High Power GaAs FET
■S-Parameters @VDS=28V, IDS=750mA, f=1.0 to 3.0 GHz
+50j
[GHz]
+25j
1.00
1.10
1.20
1.30
1.40
1.50
1.60
1.70
1.80
1.90
2.00
2.10
2.11
2.12
2.13
2.14
2.15
2.16
2.17
2.18
2.19
2.20
2.30
2.40
2.50
2.60
2.70
2.80
2.90
3.00
S11
+100j
S22
+10j
+250j
2.1
0
2.0GHz
2.2
50Ω
2.0GHz
- 10j
∞
2.1
2.2
- 250j
- 100j
- 25j
- 50j
+90°
S21
S12
3.0 2.5
±180°
0.08 0.1
0°
Scale for S 21
S cale for S 12
2.0 G H z
2.2
2.1
-90°
5
M AG
0.9634
0.9567
0.9592
0.9583
0.9524
0.9571
0.9465
0.9396
0.918
0.8744
0.7691
0.6787
0.6782
0.6957
0.7087
0.7284
0.749
0.7702
0.785
0.8009
0.8271
0.84
0.9158
0.9361
0.9386
0.9455
0.9501
0.9493
0.9576
0.9579
ANG
-172.52
-171.64
-170.81
-170.19
-169.69
-168.96
-168.85
-168.87
-169.14
-169.91
-169.68
-155.22
-153.28
-151.96
-150.22
-148.84
-147.98
-147.49
-146.95
-146.8
-146.95
-146.99
-149.95
-151.12
-151.16
-150.74
-150.74
-149.64
-149.8
-149.24
M AG
0.185
0.1738
0.1796
0.1856
0.2063
0.2399
0.3019
0.4171
0.5432
0.8481
1.4267
2.3705
2.4453
2.5065
2.5554
2.5928
2.6012
2.6085
2.5937
2.5666
2.5421
2.5068
1.781
0.9958
0.5194
0.3276
0.1998
0.1465
0.1235
0.0903
ANG
21.926
22.708
23.891
22.494
23.295
20.502
19.887
9.7863
-0.3251
-13.596
-39.755
-86.126
-92.117
-98.556
-104.83
-111.25
-117.67
-124.11
-130.41
-136.59
-142.62
-148.63
154.66
115.92
93.577
82.725
72.912
77.149
67.632
65.358
M AG
0.0011
0.0012
0.0014
0.0016
0.0016
0.0026
0.0031
0.0039
0.004
0.0056
0.0064
0.0054
0.0049
0.0047
0.0044
0.0038
0.0035
0.0032
0.0034
0.0032
0.0033
0.0033
0.0048
0.0035
0.0019
0.0013
0.001
0.0019
0.0022
0.004
ANG
91.071
105.34
106.3
119.39
112.69
122.64
127.43
122.24
113.26
111.46
73.076
15.023
4.6718
-10.341
-21.605
-31.755
-51.932
-66.043
-81.24
-99.392
-115.92
-139.05
129.47
97.983
94.352
88.626
-156.21
-171.48
-161.33
-162.61
M AG
0.9638
0.9571
0.9589
0.9571
0.9566
0.9558
0.9539
0.9461
0.9385
0.9276
0.9273
0.9018
0.8894
0.8739
0.8562
0.8371
0.8094
0.7809
0.7498
0.7194
0.6822
0.6444
0.4764
0.7412
0.8586
0.9035
0.9267
0.9347
0.947
0.947
ANG
-171.69
-171.44
-170.97
-170.73
-170.11
-169.73
-169.55
-169.47
-169.79
-170.16
-171.5
-177.51
-178.55
-179.66
179.2
178.16
177.06
176.19
175.39
174.76
174.43
174.64
-147.42
-138.53
-142.64
-145.25
-147.06
-147.9
-148.56
-148.91
FLL21E090IY
L,S-band High Power GaAs FET
■IY Package Outline
9.98
R1.524
4.826
3.251
9.779
4.826
12.7
0.152
29.50
1.575
34.036
Unit : mm
6
FLL21E090IY
L,S-band High Power GaAs FET
For further information please contact :
CAUTION
Eudyna Devices USA Inc.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
TEL: (408) 232-9500
FAX: (408) 428-9111
www.us.eudyna.com
Eudyna Devices Inc. products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the
environment. For safety, observe the following procedures:
・Do not put these products into the mouth.
・Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or
swallowed.
Eudyna Devices Europe Ltd.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
・Observe government laws and company regulations when
discarding this product. This product must be discarded in
accordance with methods specified by applicable hazardous waste
procedures.
Eudyna Devices Inc. reserves the right to change products and
specifications without notice.The information does not convey any
license under rights of Eudyna Devices Inc. or others.
Eudyna Devices Asia Pte. Ltd.
Hong Kong Branch
Rm.1101,Ocean Centre, 5 Canton Road
Tsim Sha Tsui, Kowloon, Hong kong
TEL: +852-2377-0227
FAX: +852-2377-3921
© 2004 Eudyna Devices USA Inc.
Printed in U.S.A.
Eudyna Devices Inc.
1000 Kamisukiahara, showa-cho
Nakakomagun, Yamanashi
409-3883, Japan
(Kokubo Industrial Park)
TEL +81-55-275-4411
FAX +81-55-275-9461
Sales Division
1, Kanai-cho, Sakae-ku
Yokohama,244-0845,Japan
TEL +81-45-853-8156
FAX +81-45-853-8170
7
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