CET CEI740A N-channel enhancement mode field effect transistor Datasheet

CEP740A/CEB740A
CEI740A/CEF740A
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
VDSS
RDS(ON)
ID
@VGS
CEP740A
400V
650mΩ
10A
10V
CEB740A
400V
650mΩ
10A
10V
CEI740A
400V
650mΩ
10A
10V
CEF740A
400V
650mΩ
10A e
10V
D
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.
G
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
G
D
S
CEI SERIES
TO-262(I2-PAK)
G
D
CEP SERIES
TO-220
ABSOLUTE MAXIMUM RATINGS
Parameter
S
S
CEF SERIES
TO-220F
Tc = 25 C unless otherwise noted
Limit
Symbol
TO-220/263/262
Drain-Source Voltage
VDS
400
Gate-Source Voltage
VGS
±30
Drain Current-Continuous
Drain Current-Pulsed
a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
ID
IDM
TO-220F
10
f
PD
Units
V
V
10
e
e
A
A
40
40
125
43
W
1
0.34
W/ C
Single Pulsed Avalanche Energy d
EAS
400
400
mJ
Single Pulsed Avalanche Current d
IAS
10
10
A
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
C
Symbol
Limit
Units
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
RθJC
1.0
2.9
C/W
Thermal Resistance, Junction-to-Ambient
RθJA
62.5
65
C/W
2003.October
http://www.cetsemi.com
4 - 158
CEP740A/CEB740A
CEI740A/CEF740A
Electrical Characteristics
Parameter
Tc = 25 C unless otherwise noted
Symbol
Test Condition
Min
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250µA
400
Zero Gate Voltage Drain Current
IDSS
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
Typ
Max
Units
VDS = 400V, VGS = 0V
50
µA
IGSSF
VGS = 30V, VDS = 0V
100
nA
IGSSR
VGS = -30V, VDS = 0V
-100
nA
4
V
650
mΩ
Off Characteristics
V
On Characteristics b
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Dynamic Characteristics
VGS(th)
VGS = VDS, ID = 250µA
RDS(on)
VGS = 10V, ID = 6A
gFS
VDS = 50V, ID = 6A
2
3
5.4
S
835
pF
145
pF
85
pF
c
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Switching Characteristics c
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
VDD = 200V, ID = 10A,
VGS = 10V, RGEN = 9.1Ω
16
75
ns
25
125
ns
80
100
ns
Turn-Off Fall Time
tf
35
60
ns
Total Gate Charge
Qg
52
65
nC
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS = 320V, ID = 10A,
VGS = 10V
6.5
nC
27
nC
Drain-Source Diode Characteristics and Maximun Ratings
IS g
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
b
VSD
VGS = 0V, IS = 10A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
d.L =9.16mH, IAS =10A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C .
e.Limited only by maximum temperature allowed .
f .Pulse width limited by safe operating area .
g.Full package IS(max) = 5A .
4 - 159
10
A
2
V
4
CEP740A/CEB740A
CEI740A/CEF740A
20
6
5
ID, Drain Current (A)
ID, Drain Current (A)
VGS=10,8,7,6V
4
3
2
VGS=5V
25 C
15
10
5
-55 C
1
0
0
0
1
2
3
4
5
6
0
RDS(ON), Normalized
RDS(ON), On-Resistance(Ohms)
C, Capacitance (pF)
4
5
Figure 2. Transfer Characteristics
800
600
400
Coss
200
Crss
0
0
5
10
15
20
25
2.2
1.9
ID=6A
VGS=10V
1.6
1.3
1.0
0.7
0.4
-100
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
VDS=VGS
IS, Source-drain current (A)
VTH, Normalized
Gate-Source Threshold Voltage
3
Figure 1. Output Characteristics
Ciss
ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50
2
VGS, Gate-to-Source Voltage (V)
1000
1.2
1
VDS, Drain-to-Source Voltage (V)
1200
1.3
TJ=125 C
VGS=0V
10
10
10
-25
0
25
50
75
100
125
150
1
0
-1
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C)
VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
4 - 160
15
10
VDS=320V
ID=100A
12
ID, Drain Current (A)
VGS, Gate to Source Voltage (V)
CEP740A/CEB740A
CEI740A/CEF740A
9
6
3
0
12
24
36
48
4
RDS(ON)Limit
10µs
10
10
10
0
2
1
100µs
1ms
10ms
DC
1
TC=25 C
TJ=150 C
Single Pulse
-1
10
0
10
1
10
2
10
Qg, Total Gate Charge (nC)
VDS, Drain-Source Voltage (V)
Figure 7. Gate Charge
Figure 8. Maximum Safe
Operating Area
VDD
t on
RL
V IN
D
td(off)
tf
90%
90%
VOUT
VOUT
VGS
RGEN
toff
tr
td(on)
10%
INVERTED
10%
G
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 10. Switching Waveforms
r(t),Normalized Effective
Transient Thermal Impedance
Figure 9. Switching Test Circuit
10
0
D=0.5
0.2
10
0.1
-1
PDM
0.05
0.02
t1
t2
0.01
Single Pulse
10
1. RθJC (t)=r (t) * RθJC
2. RθJC=See Datasheet
3. TJM-TC = P* RθJC (t)
4. Duty Cycle, D=t1/t2
-2
10
-2
10
-1
10
0
10
1
10
2
Square Wave Pulse Duration (msec)
Figure 11. Normalized Thermal Transient Impedance Curve
4 - 161
10
3
10
4
3
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