FJP5304D FJP5304D High Voltage High Speed Power Switch Application • • • • Wide Safe Operating Area Built-in Free Wheeling diode Suitable for Electronic Ballast Application Small Variance in Storage Time Equivalent Circuit C B TO-220 1 E 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 700 Units V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 12 V IC Collector Current (DC) 4 A ICP * Collector Current (Pulse) 8 A IB Base Current (DC) 2 A IBP * Base Current (Pulse) 4 A PC Collector Dissipation (TC=25°C) TSTG Storage Temperature 70 W - 65 ~ 150 °C * Pulse Test Pulse Width = 5ms, Duty Cycle ≥ 1.0% Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC = 1mA, IE = 0 Min. 700 Typ. Max. Units V BVCEO Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 400 V BVEBO Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 12 V ICES Collector Cut-off Current VCE = 700V, VEB = 0 100 ICEO Collector Cut-off Current VCE = 400V, IB = 0 250 mA IEBO Emitter Cut-off Current VEB = 12V, IC = 0 100 mA hFE DC Current Gain VCE = 5V, IC = 10mA VCE = 5V, IC = 2A VCE(sat) Collector-Emitter Saturation Voltage IC = 0.5A, IB = 0.1A IC = 1A, IB = 0.2A IC = 2.5A, IB = 0.5A 0.7 1.0 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC = 0.5A, IB = 0.1A IC = 1A, IB = 0.2A IC = 2.5A, IB = 0.5A 1.1 1.2 1.3 V Vf Internal Diode Forward Voltage Drop IF = 2A 2.5 V ©2003 Fairchild Semiconductor Corporation 10 8 mA 40 Rev. A, May 2003 Symbol Parameter Inductive Load Switching (VCC = 200V) tstg Storage Time tf Fall Time Test Condition Min. TYP. Max. µs 0.6 IC = 2A, IB1 = 0.4A VBE(off) = -5V, L = 200µH Units 0.1 Resistive Load Switching (VCC = 250V) tstg Storage Time tf Fall Time IC = 2A, IB1 = IB2 = 0.4A TP = 30µs 2.9 µs 0.2 * Pulse test: PW≤300µs, Duty cycle≤2% Thermal Characteristics Symbol RθJC Parameter Thermal Resistance, Junction to Case Max. 1.78 Units °C/W RθJA Thermal Resistance, Junction to Ambient 62.5 °C/W ©2003 Fairchild Semiconductor Corporation Rev. A, May 2003 FJP5304D Electrical Characteristics (Continued) TC=25°C unless otherwise noted FJP5304D Typical Characteristics 100 Vce=5V IB = 500mA IB = 450mA IB = 400mA IB = 350mA IB = 300mA IB = 250mA IB = 200mA 4 3 o Ta=125 C o hFE ,DC CURRENT GAIN IC[A], COLLECTOR CURRENT 5 IB = 150mA IB = 100mA 2 IB = 50mA 1 25 C o -25 C 10 IB = 0 0 0 1 2 3 4 5 6 7 8 9 1 0.01 10 0.1 VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristic 10 Ic=5IB O 25 C 1 O Ta=125 C O -25 C 0.1 0.01 0.01 0.1 10 Figure 2. DC Current Gain 1 Ic=5IB VBE [V],SATURATION VOLTAGE VCE (sat)[V],SATURATION VOLTAGE 10 1 IC[A], COLLECTOR CURRENT 10 1 O -25 C O 25 C O Ta=125 C 0.1 0.01 0.1 IC[A], COLLECTOR CURRENT 1 10 IC[A], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Saturation Voltage 10 1000 VCC = 250V IC = 5IB1 = -5IB2 tSTG tSTG, tF [ns], TIME tSTG, tF [µs], TIME tSTG 1 tF 0.1 100 tF VClamp = 200V, VBE(OFF)=-5V, RBB=0 Ohm, L=200 uH, IC = 5IB1 0.01 0.1 1 IC[A], COLLECTOR CURRENT Figure 5. Resitive Load Switching Time ©2003 Fairchild Semiconductor Corporation 10 10 0.1 1 10 IC[A], COLLECTOR CURRENT Figure 6. Inductive Load Switching Time Rev. A, May 2003 FJP5304D Typical Characteristics (Continued) 100 100 o IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT TC=25 C 10 1µ s 10 µ s 1 1ms DC 0.1 0.01 10 100 1000 Vcc=50V, IB1=1A, IB2 = -1A L = 1mH 10 1 0.1 0.01 10 100 1000 10000 VCE[V], COLLECTOR-EMITTER VOLTAGE VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 7. Forward Bias Safe Operating Area Figure 8. Reverse Bias Safe Operating Area PC[W], POWER DISSIPATION 100 80 60 40 20 0 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 9. Power Derating ©2003 Fairchild Semiconductor Corporation Rev. A, May 2003 FJP5304D Package Dimensions TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 Dimensions in Millimeters ©2003 Fairchild Semiconductor Corporation Rev. A, May 2003 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic® TruTranslation™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2003 Fairchild Semiconductor Corporation Rev. I2