Low-noise, matched dual monolithic transistor MAT02 1.0 SCOPE This specification documents the detail requirements for space qualified product manufactured on Analog Devices, Inc.'s QML certified line per MIL-PRF-38535 Level V except as modified herein. The manufacturing flow described in the STANDARD SPACE LEVEL PRODUCTS PROGRAM brochure is to be considered a part of this specification http://www.analog.com/aerospace This data sheet specifically details the space grade version of this product. A more detailed operational description and a complete datasheet for commercial product grades can be found at www.analog.com/MAT02 2.0 Part Number. The complete part number(s) of this specification follow: Part Number MAT02-903H 2.1 Description Low-noise, matched dual monolithic transistor Case Outline. Letter H Descriptive designator Case Outline (Lead Finish per MIL-PRF-38535) MACY1-X6 6-Lead can package (TO) Figure 1 - Terminal connections. 3.0 Absolute Maximum Ratings. (TA = 25°C, unless otherwise noted) Collector to base voltage (BVCBO) .................................................................................. 40V Collector to emitter voltage (BVCEO) .............................................................................. 40V Collector to collector voltage (BVCC) ............................................................................. 40V Emitter to emitter voltage (BVEE) ................................................................................... 40V Collector current (IC)....................................................................................................20mA Emitter current (IE).......................................................................................................20mA Total power dissipation 1/ ........................................................................................ 500mW Operating ambient temperature range .............................................................-55 to +125°C Storage temperature range ......................................................................... -65°C to +150°C Lead temperature (soldering, 60 sec) ........................................................................ +300°C Dice junction temperature ......................................................................................... +150°C 1/ Rating applies to applications not using heat sinking, device is free air only. 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MAT02 3.1 Thermal Characteristics: Thermal Resistance, TO-78 (H) Package Junction-to-Case (JC) = 45°C/W Max Junction-to-Ambient (JA) = 150°C/W Max Derate linearly at 6.67 mW/°C for ambient temperatures above 70°C. Terminal Connections 1/ Terminal 6 lead TO 1 C1 2 B1 3 E1 4 E2 5 B2 6 C2 1/ Substrate is connected to case on TO-78 package. Substrate is normally connected to the most negative circuit potential, but can be floated. Table I Parameter See notes at end of table Current Gain Symbol hFE Conditions 1/ IC = 1mA; VCB = 0V, 40V IC = 100A; VCB = 0V, 40V IC = 100A; VCB = 15V IC = 10A; VCB = 0V, 40V IC = 10A; VCB = 15V IC = 1A; VCB = 0V, 40V IC = 1A; VCB = 15V Subgroup Limit Min 1 500 2, 3 275 1 500 2, 3 225 1 400 2, 3 175 1 300 2, 3 150 Limit Max Units Current Gain Match 2/ hFE IC=10A,100A,1mA; VCB=0V 1 2 % Offset Voltage VOS VCB = 0V 1 50 V 2, 3 80 0.3 V/°C 1 25 V VCB = 0V; IC = 10A, 1mA 1 25 VCB = 0V, 40V 1 0.6 2, 3 9.0 1 70 pA/V 1 0.5 Offset Voltage vs. Temperature 5/ TCVOS VCB = 0V Offset Voltage vs. VCB 3/ VOS /VCB VCB = 0V, 40V Offset Voltage vs. Collector Current Input Offset Current Offset Current vs. VCB Bulk Emitter Resistance VOS/IC IOS IOS /VCB rBE VCB = 0V, 40V nA MAT02 Table I(cont’d) Parameter See notes at end of table Symbol Collector Base Leakage Current ICBO VCB = 40V Collector Emitter Leakage Current 4/ ICES Collector-Collector Leakage Current 4/ Bias Current Collector Saturation Voltage Breakdown Voltage Noise voltage density Limit Max Units 1 200 pA VCE = 40V, VBE = 0V 1 200 ICC VCC = 40V 1 200 IB VCB = 0V, 40V 1 25 2, 3 60 IC = 1mA, IB = 100A 1 0.1 V IC = 100A 1 2 nV/ Hz VCESAT BVCEO en Conditions 1/ Subgroup Limit Min 40 IC=1mA, fO = 10Hz 7 VCB=0V fO = 100Hz 1 fO = 1000Hz 1 fO = 10KHz 1 TABLE I NOTES: 1/ 2/ VCB = 15V; IC = 10A, unless otherwise specified. 100(I B )hFE min Current gain match (hFE) is defined as: h FE IC 3/ 4/ Measured at IC = 10A and guaranteed by design over 1A IC 1mA. ICC and ICES are verified by measurement of ICBO. 5/ Guaranteed by VOS test nA V TCVOS OS for VOS VBE T = 298°K for TA = +25°C. T MAT02 4.1 Electrical Test Requirements: Table II Test Requirements Subgroups (in accordance with MIL-PRF-38535, Table III) Interim Electrical Parameters 1 Final Electrical Parameters 1, 2, 3 1/ 2/ Group A Test Requirements 1, 2, 3, 7 Group C end-point electrical parameters 1 2/ Group D end-point electrical parameters 1 Group E end-point electrical parameters 1 1/ PDA applies to Subgroup 1. Delta's excluded from PDA. 2/ See Table III for delta parameters. See table I for conditions. 4.2 5.0 Table III. Burn-in test delta limits. TEST TITLE hFE @ 1mA hFE @ 100A BURN-IN ENDPOINT 500 500 Table III LIFE TEST ENDPOINT 420 410 hFE @ 10A 400 300 ±100 hFE @ 1A 300 180 ±120 IOS 0.6 1.1 ±0.5 DELTA LIMIT ±80 ±90 Life Test/Burn-In Circuit: 5.1 HTRB is not applicable for this drawing. 5.2 Burn-in is per MIL-STD-883 Method 1015 test condition B. 5.3 Steady state life test is per MIL-STD-883 Method 1005. UNITS nA MAT02 Rev A B C D E F G Description of Change Date Initiate Aug. 29, 2000 Correct typo at Dice temperature range, change RC package JC from Jan. 7, 2002 18 to 35°C/W, correct typo’s on table I (subscript), make correction to Table I note 3 (change from “Measured at IC = 10mA and guaranteed by design over 10mA IC 1mA” to “Measured at IC = 10A and guaranteed by design over 1A IC 1mA”), add subgroup 7 for en, add subgroup 7 to table II, delete subgroups 4, 5, 6 from table II. Update web address. Delete burn-in and rad circuits June 20, 2003 Update package offering Oct. 10, 2007 Update header/footer & add to 1.0 Scope description. Feb. 25,2008 Remove operating junction temperature line and change to Dice March 31, 2008 Junction Temperature (TJ...150°C) MAT02-913H – removed because its obsolete Sept. 23, 2014