IRF IRG4BC40KPBF Insulated gate bipolar transistor Datasheet

PD -95174
IRG4BC40KPbF
Short Circuit Rated
UltraFast IGBT
INSULATED GATE BIPOLAR TRANSISTOR
Features
C
• Short Circuit Rated UltraFast: optimized for high
operating frequencies >5.0 kHz , and Short Circuit
Rated to 10µs @ 125°C, VGE = 15V
• Generation 4 IGBT design provides higher efficiency
than Generation 3
• Industry standard TO-247AC package
• Lead-Free
VCES = 600V
VCE(on) typ. = 2.1V
G
@VGE = 15V, IC = 25A
E
n-channel
Benefits
• Generation 4 IGBTs offer highest efficiency available
• IGBTs optimized for specified application conditions
TO-220AB
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
tsc
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
Units
600
42
25
84
84
10
±20
15
160
65
-55 to +150
V
A
µs
V
mJ
W
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Wt
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Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
Max.
–––
0.50
–––
2 (0.07)
0.77
–––
80
–––
Units
°C/W
g (oz)
1
04/23/04
IRG4BC40KPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
V(BR)ECS
∆V(BR)CES/∆TJ
VCE(ON)
VGE(th)
∆VGE(th)/∆TJ
gfe
ICES
IGES
Parameter
Min. Typ.
Collector-to-Emitter Breakdown Voltage
600
—
Emitter-to-Collector Breakdown Voltage T 18
—
Temperature Coeff. of Breakdown Voltage — 0.46
— 2.10
Collector-to-Emitter Saturation Voltage
— 2.70
— 2.14
Gate Threshold Voltage
3.0
—
Temperature Coeff. of Threshold Voltage
—
-13
Forward Transconductance U
7.0
14
—
—
Zero Gate Voltage Collector Current
—
—
—
—
Gate-to-Emitter Leakage Current
—
—
Max. Units
Conditions
—
V
VGE = 0V, IC = 250µA
—
V
VGE = 0V, IC = 1.0A
—
V/°C VGE = 0V, IC = 1.0mA
2.6
IC = 25A
VGE = 15V
—
IC = 42A
See Fig.2, 5
V
—
IC = 25A , TJ = 150°C
6.0
VCE = VGE, IC = 250µA
— mV/°C VCE = VGE, IC = 250µA
—
S
VCE = 100 V, IC = 25A
250
VGE = 0V, VCE = 600V
µA
2.0
VGE = 0V, VCE = 10V, TJ = 25°C
2000
VGE = 0V, VCE = 600V, TJ = 150°C
±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
tsc
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
—
—
—
—
—
—
—
—
—
—
10
Typ.
120
16
51
30
15
140
140
0.62
0.33
0.95
—
—
—
—
—
—
—
—
—
—
30
18
190
150
1.9
13
1600
130
55
Max. Units
Conditions
180
IC = 25A
24
nC
VCC = 400V
See Fig.8
77
VGE = 15V
—
—
TJ = 25°C
ns
210
IC = 25A, VCC = 480V
210
VGE = 15V, RG = 10Ω
—
Energy losses include "tail"
—
mJ See Fig. 9,10,14
1.4
—
µs
VCC = 400V, TJ = 125°C
VGE = 15V, RG = 10Ω , VCPK < 500V
—
TJ = 150°C,
—
IC = 25A, VCC = 480V
ns
—
VGE = 15V, RG = 10Ω
—
Energy losses include "tail"
—
mJ See Fig. 11,14
—
nH
Measured 5mm from package
—
VGE = 0V
—
pF
VCC = 30V
See Fig. 7
—
ƒ = 1.0MHz
Notes:
Q Repetitive rating; VGE = 20V, pulse width limited by
S Repetitive rating; pulse width limited by maximum
R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 10Ω,
T Pulse width ≤ 80µs; duty factor ≤ 0.1%.
max. junction temperature. ( See fig. 13b )
(See fig. 13a)
2
junction temperature.
U Pulse width 5.0µs, single shot.
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IRG4BC40KPbF
50
F o r b o t h:
T ria n g u la r w a v e :
D u ty c y c le : 5 0 %
TJ = 1 2 5 ° C
T sink = 9 0 ° C
G a te d riv e a s s p e c ifie d
40
C la m p v o lta g e :
8 0 % o f ra te d
Load Current (A)
P o w e r D is s ip a tio n = 2 8 W
30
S q u a re w a v e :
6 0 % o f ra te d
v o lta g e
20
10
Ide a l d io de s
A
0
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
TJ = 150 o C
10
TJ = 25 oC
V
= 15V
20µs PULSE WIDTH
GE
1
0.1
1
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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10
I C , Collector-to-Emitter Current (A)
I C , Collector-to-Emitter Current (A)
100
T J = 150°C
TJ = 25°C
10
V C C = 50V
5µs PULSE WIDTH
1
5
7
9
A
11
VG E , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3
IRG4BC40KPbF
5.0
VCE , Collector-to-Emitter Voltage(V)
Maximum DC Collector Current(A)
50
40
30
20
10
0
25
50
75
100
125
150
V
= 15V
80 us PULSE WIDTH
GE
IC = 50 A
4.0
3.0
IC = 25 A
IC =12.5 A
2.0
1.0
-60 -40 -20
TC , Case Temperature ( ° C)
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( ° C)
Fig. 4 - Maximum Collector Current vs. Case
Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Thermal Response (Z thJC )
1
0.50
0.20
0.1
0.10
P DM
0.05
0.02
0.01
0.01
0.00001
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = PDM x Z thJC + TC
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4BC40KPbF
VGE = 0V,
f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
C, Capacitance (pF)
2500
2000
Cies
1500
1000
500
C
oes
C
res
0
1
10
20
VGE , Gate-to-Emitter Voltage (V)
3000
12
8
4
VCE , Collector-to-Emitter Voltage (V)
Total Switching Losses (mJ)
Total Switching Losses (mJ)
10
1.40
1.20
1.00
0
10
20
30
40
RG , Gate Resistance (Ohm)
Ω
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
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20
40
60
80
100
120
140
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
V CC = 480V
V GE = 15V
TJ = 25 ° C
1.60 I C = 25A
0.80
0
QG , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
1.80
VCC = 400V
I C = 25A
16
0
100
50
RG = 10Ohm
Ω
VGE = 15V
VCC = 480V
IC = 50 A
IC = 25 A
IC = 12.5 A
1
0.1
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
IRG4BC40KPbF
1000
RG
TJ
VCC
4.0 VGE
= 10Ohm
Ω
= 150 ° C
= 480V
= 15V
I C , Collector-to-Emitter Current (A)
Total Switching Losses (mJ)
5.0
VGE = 20V
T J = 125 oC
100
3.0
2.0
1.0
0.0
SAFE OPERATING AREA
0
10
20
30
40
I C , Collector-to-emitter Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
6
10
50
1
1
10
100
1000
VCE , Collector-to-Emitter Voltage (V)
Fig. 12 - Turn-Off SOA
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IRG4BC40KPbF
L
D .U .T.
VC *
50V
RL =
0 - 480V
1 00 0V
Q
480V
4 X IC@25°C
480µF
960V
R
* Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax )
* Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor
w ill inc rea se to obta in ra ted Id.
Fig. 13a - Clamped Inductive
Fig. 13b - Pulsed Collector
Load Test Circuit
Current Test Circuit
IC
L
D river*
D .U .T.
VC
Fig. 14a - Switching Loss
Test Circuit
50V
1000V
Q
* Driver same type
as D.U.T., VC = 480V
R
S
Q
R
9 0%
1 0%
S
VC
90 %
Fig. 14b - Switching Loss
t d (o ff)
10 %
IC 5%
Waveforms
tf
tr
t d (o n )
t=5µ s
E on
E o ff
E ts = ( Eo n +E o ff )
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7
IRG4BC40KPbF
TO-220AB Package Outline
2 .8 7 (.1 1 3 )
2 .6 2 (.1 0 3 )
1 0 .5 4 (.4 15 )
1 0 .2 9 (.4 05 )
- B -
3.7 8 (.1 4 9 )
3.5 4 (.1 3 9 )
4.69 (.1 8 5 )
4.20 (.1 6 5 )
- A -
1 .3 2 (.0 5 2 )
1 .2 2 (.0 4 8 )
6.4 7 (.2 5 5 )
6.1 0 (.2 4 0 )
4
1 5 .24 ( .6 0 0 )
1 4 .84 ( .5 8 4 )
L E A D AS S I G N M E N T S
1 .1 5 (.0 4 5)
M IN
1
2
3
1234-
14 .0 9 (.5 5 5 )
13 .4 7 (.5 3 0 )
1 .40 ( .0 5 5 )
1 .15 ( .0 4 5 )
G A T2E- D R A IN
- SO U RC E
D R A3IN
S O U4R- CDE
R A IN
D R A IN
IG B T s , C o P A C K
1234-
G A TE
C O LLE C TO R
E M IT T E R
C O LLE C TO R
4 .06 (.1 6 0 )
3 .55 (.1 4 0 )
3X
3X
LE A D A S S IG N M E N T S
H E X F E1T- G A T E
0 .9 3 (.0 3 7 )
0 .6 9 (.0 2 7 )
0 .3 6 (.0 1 4 )
3X
M
B
A
M
2 .5 4 (.1 0 0)
2X
N O TE S:
1 D IM E N S IO N IN G & T O LE R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 82 .
2 C O N T R O L L IN G D IM E N S IO N : IN C H
0.5 5 (.0 22 )
0.4 6 (.0 18 )
2 .9 2 (.11 5 )
2 .6 4 (.10 4 )
3 O U T LIN E C O N F O R M S T O J E D E C O U T L IN E T O -2 20 A B .
4 H E A T S IN K & LE A D M E A S U R E M E N T S D O N O T IN C L U D E B U R R S .
TO-220AB Part Marking Information
E X AM P L E :
T H IS IS A N IR F 1 0 1 0
L OT COD E 1 789
AS S E M B L E D ON W W 1 9 , 1 9 9 7
IN T H E AS S E M B L Y L I N E "C "
N o te: "P " in ass em b ly line
pos ition indicate s "Le ad-F ree"
IN T E R N AT IO N AL
R E CT IF I E R
L OGO
AS S E M B L Y
L OT COD E
P AR T N U M B E R
D AT E C O D E
Y E AR 7 = 1 9 9 7
W E E K 19
L IN E C
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 04/04
8
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