Rohm EMA4 Pnp -100ma -50v complex digital transistors (bias resistor built-in transistor Datasheet

EMA4 / UMA4N / FMA4A
PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors) Datasheet
lOutline
Parameter
VCEO
IC(MAX.)
R1
Tr1 and Tr2
EMT5
UMT5
(3)
(5)
-50V
-100mA
10kW
(2)
(1)
(4)
(4)
(1)
(2)
(3)
(5)
EMA4
(SC-107BB)
SMT5
UMA4N
SOT-353 (SC-88A)
(1)
lFeatures
(2)
1) Built-In Biasing Resistors.
2) Two DTA114T chips in one package.
3) Emitter-common type.
4) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit).
5) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
completely eliminating parasitic effects.
6) Only the on/off conditions need to be set for
operation, making the circuit design easy.
7) Lead Free/RoHS Compliant.
(5)
(4)
(3)
FMA4A
(SC-74A)
lInner circuit
EMA4 / UMA4N
Base
(3)
(4)
Collector
lApplication
Emitter
(2)
FMA4A
Base
(1)
Base
(3)
(5)
Collector
(2)
Collector
Emitter
(4)
Base
(5)
(1)
Collector
Interface circuit, Driver circuit
lPackaging specifications
Package
Package
size
(mm)
Taping
code
EMA4
EMT5
1616
T2R
180
8
8,000
A4
UMA4N
UMT5
2021
TR
180
8
3,000
A4
FMA4A
SMT5
2928
T148
180
8
3,000
A4
Part No.
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© 2012 ROHM Co., Ltd. All rights reserved.
1/6
Basic
Reel size Tape width
ordering
(mm)
(mm)
unit (pcs)
Marking
2012.06 - Rev.B
Data Sheet
EMA4 / UMA4N / FMA4A
lAbsolute maximum ratings (Ta = 25°C)
<For Tr1 and Tr2 in common>
Parameter
Symbol
Values
Unit
Collector-base voltage
VCBO
-50
V
Collector-emitter voltage
VCEO
-50
V
Emitter-base voltage
VEBO
-5
V
IC(MAX.) *1
-100
mA
150 (Total) *3
mW
300 (Total) *4
mW
Tj
150
°C
Tstg
-55 to +150
°C
Collector current
Collector Power dissipation
EMA4 / UMA4N
PC
FMA4A
Junction temperature
Range of storage temperature
*2
lElectrical characteristics(Ta = 25°C)
<For Tr1 and Tr2 in common>
Parameter
Symbol
Collector-base breakdown voltage
BVCBO
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Min.
Typ.
Max.
Unit
IC= -50mA
-50
-
-
V
BVCEO
IC= -1mA
-50
-
-
V
BVEBO
IE= -50mA
-5
-
-
V
Collector cut-off current
ICBO
VCB = -50V
-
-
-0.5
mA
Emitter cut-off current
IEBO
VEB = -4V
-
-
-0.5
mA
VCE(sat)
IC / IB= -10mA / -1mA
-
-
-0.3
V
DC current gain
hFE
VCE= -5V , IC= -1mA ,
100
250
600
-
Input resistance
R1
-
7
10
13
kW
Transition frequency
fT *1
VCE = -10V, IE = 5mA,
f = 100MHz
-
250
-
MHz
Collector-emitter saturation voltage
Conditions
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
*3 120mW per element must not be exceeded.
*4 200mW per element must not be exceeded.
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© 2012 ROHM Co., Ltd. All rights reserved.
2/6
2012.06 - Rev.B
Data Sheet
EMA4 / UMA4N / FMA4A
lElectrical characteristic curves(Ta = 25°C)
Fig.2 Grounded emitter output
characteristics
Fig.1 Grounded emitter propagation
characteristics
-10
-100
-1
-0.1
-450μA
Ta=25ºC
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : Ic (mA)
VCE= -5V
IB= -500μA
Ta=100ºC
25ºC
-40ºC
-0.01
-0.001
-400μA
-80
-350μA
-300μA
-250μA
-60
-200μA
-40
-150μA
-100μA
-20
-50μA
0A
0
0
-0.5
-1
-1.5
-2
0
BASE TO EMITTER VOLTAGE : VBE (V)
-5
-10
COLLECTOR TO EMITTER
VOLTAGE : VCE (V)
Fig.4 Collector-emitter saturation voltage
vs. Collector Current
DC CURRENT GAIN : hFE
COLLECTOR SATURATION
VOLTAGE : VCE(sat) (V)
Fig.3 DC Current gain
vs. Collector Current
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
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© 2012 ROHM Co., Ltd. All rights reserved.
3/6
2012.06 - Rev.B
Data Sheet
EMA4 / UMA4N / FMA4A
lDimensions (Unit : mm)
D
EMT5
A
x
c
S A
Lp
Lp
HE
L
E
L
b
A1
y S
l1
A
e1
e
S
e
b2
Patterm of terminal position areas
DIM
A1
A
b
c
D
E
e
HE
L
Lp
x
y
DIM
e1
b2
l1
MILIMETERS
MIN
MAX
0.00
0.10
0.45
0.55
0.17
0.27
0.08
0.18
1.50
1.70
1.10
1.30
0.50
1.50
1.70
0.10
0.30
0.35
0.10
0.10
MILIMETERS
MIN
MAX
1.25
0.37
0.45
INCHES
MIN
0
0.018
0.007
0.003
0.059
0.043
MAX
0.004
0.022
0.011
0.007
0.067
0.051
0.02
0.059
0.004
-
0.067
0.012
0.014
0.004
0.004
INCHES
MIN
MAX
0.049
-
0.015
0.018
Dimension in mm/inches
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© 2012 ROHM Co., Ltd. All rights reserved.
4/6
2012.06 - Rev.B
Data Sheet
EMA4 / UMA4N / FMA4A
lDimensions (Unit : mm)
UMT5
D
A
e
c
x
Lp
L1
A3
S A
e
e1
l1
y S
A1
A
b
HE
E
Q
S
b2
Patterm of terminal position areas
DIM
A
A1
A3
b
c
D
E
e
HE
L1
Lp
Q
x
y
DIM
e1
b2
l1
MILIMETERS
MIN
MAX
0.80
1.00
0.00
0.10
0.25
0.15
0.30
0.10
0.20
1.90
2.10
1.15
1.35
0.65
2.00
2.20
0.20
0.50
0.25
0.55
0.10
0.30
0.10
0.10
MILIMETERS
MIN
MAX
1.55
0.40
0.65
INCHES
MIN
0.031
0
MAX
0.039
0.004
0.01
0.006
0.004
0.075
0.045
0.012
0.008
0.083
0.053
0.03
0.079
0.008
0.01
0.004
-
0.087
0.02
0.022
0.012
0.004
0.004
INCHES
MIN
MAX
0.06
-
0.016
0.026
Dimension in mm/inches
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© 2012 ROHM Co., Ltd. All rights reserved.
5/6
2012.06 - Rev.B
Data Sheet
EMA4 / UMA4N / FMA4A
lDimensions (Unit : mm)
SMT5
D
A
e
c
L1
Lp
HE
E
Q
b
A3
x
S A
y S
A1
l1
A
e1
e
S
b2
Patterm of terminal position areas
DIM
A
A1
A3
b
c
D
E
e
HE
L1
Lp
Q
x
y
DIM
e1
b2
l1
MILIMETERS
MIN
MAX
1.00
1.30
0.00
0.10
0.25
0.25
0.40
0.09
0.25
2.80
3.00
1.50
1.80
0.95
2.60
3.00
0.30
0.60
0.40
0.70
0.20
0.30
0.20
0.10
MILIMETERS
MIN
MAX
2.10
0.60
0.90
INCHES
MIN
0
MAX
0.051
0.004
0.01
0.01
0.004
0.11
0.059
0.016
0.01
0.118
0.071
0.04
0.102
0.012
0.016
0.008
-
0.118
0.024
0.028
0.012
0.008
0.004
INCHES
MIN
MAX
0.08
-
0.024
0.035
Dimension in mm/inches
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© 2012 ROHM Co., Ltd. All rights reserved.
6/6
2012.06 - Rev.B
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Notes
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which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
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However, should you incur any damage arising from any inaccuracy or misprint of such
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R1120A
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