ETC2 GBU6D Glass passivated single phase bridge rectifier Datasheet

GBU6D thru GBU6M
Glass Passivated Single
Phase Bridge Rectifiers
Reverse Voltage 200 to 1000V
Forward Current 6.0 Amp
Features
y
y
y
y
y
Circuit
Glass passivated die construction
Ideal for printed circuit boards
Plastic material used carries UL
flammability recognition 94V-0
High surge current capability
High temperature soldering guaranteed:
265℃ /10 seconds, 0.375” (9.5mm) lead
length, 5lbs. (2.3kg) tension
Mechanical Data
Case: Molded plastic case
Terminals: Plated leads solderable per
MIL-STD-750, Method 2026
-
Polarity: Marked on Body
Mounting Position: Any
+
Module Type
TYPE
VRRM
VRSM
GBU6D
GBU6G
GBU6J
GBU6K
GBU6M
200V
400V
600V
800V
1000V
300V
500V
700V
900V
1100V
Maximum Ratings and Thermal Characteristics (TA = 25℃ unless otherwise noted)
Symbol
Conditions
Values
Maximum average forward output rectified current Tc =100℃
6.0 (1)
IF(AV)
Peak forward surge current single half sine-wave superimposed
on rated load (JEDEC Method)
IFSM
i2t
Rating for fusing (t<8.3ms)
a.c.50HZ;r.m.s.;1min
Visol
Operating Junction and storage temperature range
Approximate Weight
A
127
A2s
2500
V
Maximum Instantaneous Forward Voltage per leg
Maximum DC reverse current at rated
DC blocking voltage per leg
℃/W
-55 to +150
Electrical Characteristics (TA = 25℃ unless otherwise noted)
Symbol
Conditions
Notes:
175
22
4.2(3)
Maximum thermal resistance per leg
Tj, TSTG
Weight
IR
A
(2)
RθJA
RθJC
VF
Units
IFM =6.0A
TA = 25℃
TA = 125℃
4.0
℃
g
Values
Units
1.1
V
5.0
500
µA
(1) Heat sink, TC mouting-4x4x0.15cm thick copper plate
(2) Junction to ambient without heatsink
(3) Junction to case with heatsink
(4) Recommended mounting position is to bolt down on heatsink with silicone thermal compound for
maximum heat transfer with M3 screw
Document Number: GBU6D thru GBU6M
Jun.25, 2010
www.smsemi.com
1
GBU6D thru GBU6M
Performance Curves
8
6
4
2
0
Mounted on 4x4 inch
Copper PC Board
12.7mm lead length
0
50
100
TA, AMBIENT TEMPERATURE (ºC)
Fig.1 Forward Current Derating Curve
150
10
1.0
Tj=25ºC
Pulse Width=300μs
0.1
0.6
0.8
1.0
1.2
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig.2 Typical Forward Characteristics, per element
1000
Tj=125ºC
8.3ms Single Half-Sine-Wave
250
Cj, CAPACITANCE (pF)
IFSM, PEAK FWD SURGE CURRENT (A)
300
100
IF, INSTANTANEOUS FORWARD CURRENT (A)
I (AV), AVERAGE FORWARD CURRENT (A)
10
200
100
150
100
50
10
0.1
1
10
100
NUMBER OF CYCLES AT 60Hz
Fig.3 Max Non-Repetitive Forward Surge Current
IR, INSTANTANEOUS REVERSE CURRENT (μA)
0
Tj=25ºC
f =1MHZ
1
10
100
VR, REVERSE VOLTAGE (V)
Fig.4 Typ Junction Capacitance per element
10
Tj=125ºC
1.0
0.1
Tj=25ºC
0.01
0
20
40
60
80
100
120
140
RATED PERCENT OF PEAK REVERSE VOLTAGE (%)
Fig.5 Typical Reverse Characteristics
Document Number:GBU6D thru GBU6M
Jun.25, 2010
www.smsemi.com
2
GBU6D thru GBU6M
Package Outline Information
CASE: GBU
0.880(22.3)
0.860(21.8)
0.125(3.2)×45°
Chamfer
0.310(7.9)
0.290(7.4)
0.140(3.56)
0.130(3.30)
0.160(4.1)
0.140(3.5)
0.740(18.8)
0.720(18.3)
0.085(2.16)
0.065(1.65)
+
0.080(2.03)
0.060(1.52)
~
~
0.075
(1.9)R
-
0.710(18.0)
0.690(17.5)
0.100(2.54)
0.085(2.16)
0.085(2.16)
0.075(1.90)
0.026(0.67)
0.020(0.52)
0.080(2.03)
0.065(1.65)
0.050(1.27)
0.040(1.02)
0.190(4.83)
0.210(5.33)
Dimensions in inches (mm)
Document Number: GBU6D thru GBU6M
Jun.25, 2010
www.smsemi.com
3
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