ATMEL AT49BV1604T-12UI 16-megabit 1m x 16/2m x 8 3-volt only flash memory Datasheet

Features
• 2.7V to 3.6V Read/Write
• Access Time - 90 ns
• Sector Erase Architecture
•
•
•
•
•
•
•
•
•
•
•
– Thirty 32K word (64K byte) Sectors with Individual Write Lockout
– Eight 4K word (8K byte) Sectors with Individual Write Lockout
– Two 16K word (32K byte) Sectors with Individual Write Lockout
Fast Word Program Time - 20 µs
Fast Sector Erase Time - 200 ms
Dual Plane Organization, Permitting Concurrent Read while Program/Erase
– Memory Plane A: Eight 4K Word, Two 16K Word and Six 32K Word Sectors
– Memory Plane B: Twenty-Four 32K Word Sectors
Erase Suspend Capability
– Supports Reading/Programming Data from Any Sector by Suspending Erase of
Any Different Sector
Low Power Operation
– 25 mA Active
– 10 µA Standby
Data Polling, Toggle Bit, Ready/Busy for End of Program Detection
Optional VPP Pin for Fast Programming
RESET Input for Device Initialization
Sector Program Unlock Command
TSOP, CBGA, and µBGA Package Options
Top or Bottom Boot Block Configuration Available
Description
The AT49BV16X4(T) is 2.7 to 3.6 volt 16-megabit Flash memory organized as
1,048,576 words of 16 bits each or 2,097,152 bytes of 8 bits each. The x16 data
appears on I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided
into 40 blocks for erase operations. The device is offered in 48-pin TSOP and 48-ball
µBGA packages. The device has CE, and OE control signals to avoid any bus contention. This device can be read or reprogrammed using a single 2.7V power supply,
making it ideally suited for in-system programming.
(continued)
16-Megabit
(1M x 16/2M x 8)
3-volt Only
Flash Memory
AT49BV1604
AT49BV1604T
AT49BV1614
AT49BV1614T
Advance
Information
AT49BV16X4(T)
Pin Configurations
Pin Name
Function
A0 - A19
Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
RESET
Reset
RDY/BUSY
READY/BUSY Output
VPP
Optional Power Supply for Faster
Program/Erase Operations
I/O0 - I/O14
Data Inputs/Outputs
I/O15 (A-1)
I/O15 (Data Input/Output, Word Mode)
A-1 (LSB Address Input, Byte Mode)
BYTE
Selects Byte or Word Mode
NC
No Connect
VCCQ
Output Power Supply
DC
Don’t Connect
AT49BV1604
Rev. 0925B–05/98
1
TSOP Top View
Type 1
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
WE
RESET
VPP
NC
A19
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A16
VCCQ
GND
I/O15
I/O7
I/O14
I/O6
I/O13
I/O5
I/O12
I/O4
VCC
I/O11
I/O3
I/O10
I/O2
I/O9
I/O1
I/O8
I/O0
OE
GND
CE
A0
µBGA Top View (Ball Down)
1
2
3
4
5
6
7
8
A13
A11
A8
VPP
NC
A19
A7
A4
A14
A10
WE
RST
A18
A17
A5
A2
A15
A12
A9
NC
NC
A6
A3
A1
A16
I/O14
I/O5
I/O11
I/O2
I/O8
CE
A0
VCCQ I/O15
I/O6
I/O12
I/O3
I/O9
I/O0
GND
GND
I/O13
I/O4
VCC
I/O10
I/O1
OE
A
B
AT49BV1604(T)
C
D
E
F
I/O7
TSOP Top View
Type 1
A15
A14
A13
A12
A11
A10
A9
A8
A19
NC
WE
RESET
VPP
NC
RDY/BUSY
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A16
BYTE
GND
I/O15/A-1
I/O7
I/O14
I/O6
I/O13
I/O5
I/O12
I/O4
VCC
I/O11
I/O3
I/O10
I/O2
I/O9
I/O1
I/O8
I/O0
OE
GND
CE
A0
CBGA Top View
AT49BV16X4(T)
G
F
E
D
C
B
A
VSS
OE
CE
A0
A1
A2
A4
A3
I/O1
I/O9
I/O8
I/O0
A5
A6
A17
A7
I/O3
I/O11
I/O10
I/O2
NC
A18
NC RDY/BUSY
I/O4
VCC
I/O12
I/O5
A19
NC
RESET
WE
I/O6
I/O13
I/O14
I/O7
A11
A10
A8
A9
VSS
I/O15
/A-1
BYTE
A16
A15
A14
A12
A13
1
2
3
AT49BV1614(T)
The device powers on in the read mode. Command
sequences are used to place the device in other operation
modes such as program and erase. The device has the
capability to protect the data in any sector. Once the data
protection for a given sector is enabled, the data in that
sector cannot be changed using input levels between
ground and VCC.
The device is segmented into two memory planes. Reads
from memory plane B may be performed even while program or erase functions are being executed in memory
plane A and vice versa. This operation allows improved
system performance by not requiring the system to wait for
a program or erase operation to complete before a read is
performed. To further increase the flexibility of the device, it
2
H
4
5
6
contains an Erase Suspend feature. This feature will put
the Erase on hold for any amount of time and let the user
read data from or program data to any of the remaining
sectors within the same memory plane. There is no reason
to suspend the erase operation if the data to be read is in
the other memory plane. The end of a program or an Erase
cycle is detected by the Ready/Busy pin, Data polling, or by
the toggle bit.
A V PP pin is provided to improve program/erase times at
lower supply voltages. This pin does not need to be utilized. If it is not used the pin should be connected to ground
or VCC. To take advantage of faster programming, the pin
should supply 5.0 volts during program and erase operations.
AT49BV16X4(T)
A six byte command (bypass unlock) sequence to remove
the requirement of entering the three byte program
sequence is offered to further improve programming time.
After entering the six byte code, only single pulses on the
write control lines are required for writing into the device.
This mode (single pulse byte/word program) is exited by
powering down the device, or by pulsing the RESET pin
low and then bringing it back to VCC. Erase and Erase Suspend/Resume commands will not work while in this mode;
if entered they will result in data being programmed into the
device. It is not recommended that the six byte code reside
in the software of the final product but only exist in external
programming code.
The BYTE pin controls whether the device data I/O pins
operate in the byte or word configuration. If the BYTE pin is
set at logic “1”, the device is in word configuration, I/O0I/O15 are active and controlled by CE and OE.
If the BYTE pin is set at logic “0”, the device is in byte configuration, and only data I/O pins I/O0-I/O7 are active and
controlled by CE and OE. The data I/O pins I/O8-I/O14 are
tri-stated, and the I/O15 pin is used as an input for the LSB
(A-1) address function.
Block Diagram
I/O0 - I/O15/A-1
INPUT
BUFFER
INPUT
BUFFER
IDENTIFIER
REGISTER
STATUS
REGISTER
DATA
REGISTER
A0 - A19
OUTPUT
MULTIPLEXER
OUTPUT
BUFFER
CE
WE
OE
RESET
BYTE
COMMAND
REGISTER
ADDRESS
LATCH
DATA
COMPARATOR
Y-DECODER
Y-GATING
X-DECODER
PLANE B
SECTORS
RDY/BUSY
WRITE STATE
MACHINE
PROGRAM/ERASE
VOLTAGE SWITCH
VPP
VCC
GND
PLANE A SECTORS
Device Operation
READ: The AT49BV16X4(T) is accessed like an EPROM.
When CE and OE are low and WE is high, the data stored
at the memory location determined by the address pins are
asserted on the outputs. The outputs are put in the high
impedance state whenever CE or OE is high. This dual-line
control gives designers flexibility in preventing bus contention.
COMMAND SEQUENCES: When the device is first powered on it will be reset to the read or standby mode
depending upon the state of the control line inputs. In order
to perform other device functions, a series of command
sequences are entered into the device. The command
sequences are shown in the Command Definitions table
(I/O8 - I/O15 are don't care inputs for the command codes).
The command sequences are written by applying a low
pulse on the WE or CE input with CE or WE low (respectively) and OE high. The address is latched on the falling
edge of CE or WE, whichever occurs last. The data is
latched by the first rising edge of CE or WE. Standard
microprocessor write timings are used. The address locations used in the command sequences are not affected by
entering the command sequences.
3
RESET: A RESET input pin is provided to ease some system applications. When RESET is at a logic high level, the
device is in its standard operating mode. A low level on the
RESET input halts the present device operation and puts
the outputs of the device in a high impedance state. When
a high level is reasserted on the RESET pin, the device
returns to the Read or Standby mode, depending upon the
state of the control inputs. By applying a 12V ± 0.5V input
signal to the RESET pin any sector can be reprogrammed
even if the sector lockout feature has been enabled (see
Sector Programming Lockout Override section).
ERASURE: Before a byte/word can be reprogrammed, it
must be erased. The erased state of memory bits is a logical “1”. The entire device can be erased by using the Chip
Erase command or individual sectors can be erased by
using the Sector Erase commands.
CHIP ERASE: The entire device can be erased at one
time by using the 6-byte chip erase software code. After the
chip erase has been initiated, the device will internally time
the erase operation so that no external clocks are required.
The maximum time to erase the chip is tEC.
If the sector lockout has been enabled, the Chip Erase will
not erase the data in the sector that has been locked; it will
erase only the unprotected sectors. After the chip erase,
the device will return to the read or standby mode.
SECTOR ERASE: As an alternative to a full chip erase, the
device is organized into forty sectors (SA0 - SA39) that can
be individually erased. The Sector Erase command is a six
bus cycle operation. The sector address is latched on the
falling WE edge of the sixth cycle while the 30H data input
command is latched on the rising edge of WE. The sector
erase starts after the rising edge of WE of the sixth cycle.
The erase operation is internally controlled; it will automatically time to completion. The maximum time to erase a section is tSEC. When the sector programming lockout feature
is not enabled, the sector will erase (from the same sector
erase command). Once a sector has been protected, data
in the protected sectors cannot be changed unless the
RESET pin is taken to 12V ± 0.5V. An attempt to erase a
sector that has been protected will result in the operation
terminating in 2 µs.
BYTE/WORD PROGRAMMING: Once a memory block is
erased, it is programmed (to a logical “0”) on a byte-by-byte
or on a word-by-word basis. Programming is accomplished
via the internal device command register and is a 4-bus
cycle operation. The device will automatically generate the
required internal program pulses.
Any commands written to the chip during the embedded
programming cycle will be ignored. If a hardware reset happens during programming, the data at the location being
programmed will be corrupted. Please note that a data “0”
cannot be programmed back to a “1”; only erase operations
can convert “0”s to “1”s. Programming is completed after
4
AT49BV16X4(T)
the specified tBP cycle time. The DATA polling feature or
the toggle bit feature may be used to indicate the end of a
program cycle.
SECTOR PROGRAMMING LOCKOUT: Each sector has a
programming lockout feature. This feature prevents programming of data in the designated sectors once the feature has been enabled. These sectors can contain secure
code that is used to bring up the system. Enabling the lockout feature will allow the boot code to stay in the device
while data in the rest of the device is updated. This feature
does not have to be activated; any sector’s usage as a
write protected region is optional to the user.
Once the feature is enabled, the data in the protected sectors can no longer be erased or programmed when input
levels of 5.5V or less are used. Data in the remaining sectors can still be changed through the regular programming
method. To activate the lockout feature, a series of six program commands to specific addresses with specific data
must be performed. Please refer to the Command Definitions table.
SECTOR PROGRAMMING LOCKOUT OVERRIDE: The
user can override the sector programming lockout by taking
the RESET pin to 12V ± 0.5V. By doing this protected data
can be altered through a chip erase, sector erase or
byte/word programming. When the RESET pin is brought
back to TTL levels the sector programming lockout feature
is again active.
ERASE SUSPEND/ERASE RESUME: The erase suspend
command allows the system to interrupt a sector erase
operation and then program or read data from a different
sector within the same plane. Since this device has a dual
plane architecture, there is no need to use the erase suspend feature while erasing a sector when you want to read
data from a sector in the other plane. After the erase suspend command is given, the device requires a maximum
time of 15 µs to suspend the erase operation. After the
erase operation has been suspended, the plane which contains the suspended sector enters the erase-suspend-read
mode. The system can then read data or program data to
any other sector within the device. An address is not
required during the erase suspend command. During a
sector erase suspend, another sector cannot be erased. To
resume the sector erase operation, the system must write
the erase resume command. The erase resume command
is a one bus cycle command, which does require the plane
address (determined by A18 and A19). The device also
supports an erase suspend during a complete chip erase.
While the chip erase is suspended, the user can read from
any sector within the memory that is protected. The command sequence for a chip erase suspend and a sector
erase suspend are the same.
PRODUCT IDENTIFICATION: The product identification
mode identifies the device and manufacturer as Atmel. It
AT49BV16X4(T)
may be accessed by hardware or software operation. The
hardware operation mode can be used by an external programmer to identify the correct programming algorithm for
the Atmel product.
For details, see Operating Modes (for hardware operation)
or Software Product Identification. The manufacturer and
device code is the same for both modes.
DATA POLLING: The AT49BV16X4(T) features DATA
polling to indicate the end of a program cycle. During a program cycle an attempted read of the last byte/word loaded
will result in the complement of the loaded data on I/O7.
Once the program cycle has been completed, true data is
valid on all outputs and the next cycle may begin. During a
chip or sector erase operation, an attempt to read the
device will give a “0” on I/O7. Once the program or erase
cycle has completed, true data will be read from the device.
DATA polling may begin at any time during the program
cycle. Please see “Status Bit Table” for more details.
TOGGLE BIT: In addition to DATA polling the
AT49BV16X4(T) provides another method for determining
the end of a program or erase cycle. During a program or
erase operation, successive attempts to read data from the
same memory plane will result in I/O6 toggling between
one and zero. Once the program cycle has completed, I/O6
will stop toggling and valid data will be read. Examining the
toggle bit may begin at any time during a program cycle.
An additional toggle bit is available on I/O2 which can be
used in conjunction with the toggle bit which is available on
I/O6. While a sector is erase suspended, a read or a program operation from the suspended sector will result in the
I/O2 bit toggling. Please see status bit table for more
details.
RDY/BUSY: An open drain READY/BUSY output pin provides another method of detecting the end of a program or
erase operation. RDY/BUSY is actively pulled low during
the internal program and erase cycles and is released at
the completion of the cycle. The open drain connection
allows for OR-tying of several devices to the same
RDY/BUSY line.
HARDWARE DATA PROTECTION: Hardware features
protect against inadvertent programs to the
AT49BV16X4(T) in the following ways: (a) V CC sense: if
VCC is below 1.8V (typical), the program function is inhibited. (b) VCC power on delay: once VCC has reached the
VCC sense level, the device will automatically time out 10
ms (typical) before programming. (c) Program inhibit: holding any one of OE low, CE high or WE high inhibits program cycles. (d) Noise filter: pulses of less than 15 ns
(typical) on the WE or CE inputs will not initiate a program
cycle.
INPUT LEVELS: While operating with a 2.7V to 3.6V
power supply, the address inputs and control inputs (OE,
CE, and WE) may be driven from 0 to 5.5V without
adversely affecting the operation of the device. The I/O
lines can only be driven from 0 to VCC + 0.6V.
OUTPUT LEVELS: Output High Levels (VOH) are equal to
VCCQ - 0.2V (not VCC). For 2.7V - 3.6V output levels, VCCQ
must be tied to V CC. For 1.8V - 2.2V output levels, V CCQ
must be regulated to 2.0V ± 10% while VCC must be regulated to 2.7V - 3.0V (for minimum power).
5
Command Definition in (Hex)(1)
Command
Sequence
1st Bus
Cycle
Bus
Cycles
Addr
Data
Read
1
Addr
DOUT
Chip Erase
6
5555
AA
2nd Bus
Cycle
3rd Bus
Cycle
4th Bus
Cycle
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
2AAA
55
5555
80
5555
AA
2AAA
55
5555
10
6
5555
AA
2AAA
55
5555
80
5555
AA
Byte/Word Program
4
5555
AA
2AAA
55
5555
A0
Addr
DIN
Bypass Unlock
6
5555
AA
2AAA
55
5555
80
5555
Single Pulse
Byte/Word Program
1
Addr
DIN
Sector Lockout
6
5555
AA
2AAA
55
5555
80
5555
Erase Suspend
1
xxxx
B0
Erase Resume
1
(5)
PA
30
Product ID Entry
3
5555
AA
2AAA
55
5555
90
Product ID Exit(2)
3
5555
AA
2AAA
55
5555
F0
(2)
1
xxxx
F0
Notes:
6th Bus
Cycle
Addr
Sector Erase
Product ID Exit
5th Bus
Cycle
(3)(4)
2AAA
55
SA
AA
2AAA
55
5555
A0
AA
2AAA
55
SA(3)(4)
40
30
1. The DATA FORMAT in each bus cycle is as follows: I/O15 - I/O8 (Don’t Care); I/O7 - I/O0 (Hex).
The ADDRESS FORMAT in each bus cycle is as follows: A15 - A0 (Hex), A-1, A14 - A19 (Don’t Care).
2. Either one of the Product ID Exit commands can be used.
3. SA = sector address. Any byte/word address within a sector can be used to designate the sector address (see next four
pages for details).
4. When the sector programming lockout feature is not enabled, the sector will erase (from the same sector erase command).
Once the sector has been protected, data in the protected sectors cannot be changed unless the RESET pin is taken to
12V ± 0.5V.
5. PA is the plane address (A19 - A18).
Absolute Maximum Ratings*
Temperature Under Bias ................................ -55°C to +125°C
Storage Temperature ..................................... -65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground ...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground .............................-0.6V to VCC + 0.6V
Voltage on OE
with Respect to Ground ...................................-0.6V to +13.5V
6
AT49BV16X4(T)
*NOTICE:
Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect device
reliability.
AT49BV16X4(T)
Memory Plane A - Bottom Boot
Size (Bytes/Words)
x8
Address Range (A19 - A-1)
x16
Address Range (A19 - A0)
SA0
8K/4K
000000 - 001FFF
00000 - 00FFF
SA1
8K/4K
002000 - 003FFF
01000 - 01FFF
SA2
8K/4K
004000 - 005FFF
02000 - 02FFF
SA3
8K/4K
006000 - 007FFF
03000 - 03FFF
SA4
8K/4K
008000 - 009FFF
04000 - 04FFF
SA5
8K/4K
00A000 - 00BFFF
05000 - 05FFF
SA6
8K/4K
00C000 - 00DFFF
06000 - 06FFF
SA7
8K/4K
00E000 - 00FFFF
07000 - 07FFF
SA8
32K/16K
010000 - 017FFF
08000 - 0BFFF
SA9
32K/16K
018000 - 01FFFF
0C000 - 0FFFF
SA10
64K/32K
020000 - 02FFFF
10000 - 17FFF
SA11
64K/32K
030000 - 03FFFF
18000 - 1FFFF
SA12
64K/32K
040000 - 04FFFF
20000 - 27FFF
SA13
64K/32K
050000 - 05FFFF
28000 - 2FFFF
SA14
64K/32K
060000 - 06FFFF
30000 - 37FFF
SA15
64K/32K
070000 - 07FFFF
38000 - 3FFFF
Sector
7
Memory Plane B - Bottom Boot
Size (Bytes/Words)
x8
Address Range (A19 - A-1)
x16
Address Range (A19 - A0)
SA16
64K/32K
080000 - 08FFFF
40000 - 47FFF
SA17
64K/32K
090000 - 09FFFF
48000 - 4FFFF
SA18
64K/32K
0A0000 - 0AFFFF
50000 - 57FFF
SA19
64K/32K
0B0000 - 0BFFFF
58000 - 5FFFF
SA20
64K/32K
0C0000 - 0CFFFF
60000 - 67FFF
SA21
64K/32K
0D0000 - 0DFFFF
68000 - 6FFFF
SA22
64K/32K
0E0000 - 0EFFFF
70000 - 77FFF
SA23
64K/32K
0F0000 - 0FFFFF
78000 - 7FFFF
SA24
64K/32K
100000 - 10FFFF
80000 - 87FFF
SA25
64K/32K
110000 - 11FFFF
88000 - 8FFFF
SA26
64K/32K
120000 - 12FFFF
90000 - 97FFF
SA27
64K/32K
130000 - 13FFFF
98000 - 9FFFF
SA28
64K/32K
140000 - 14FFFF
A0000 - A7FFF
SA29
64K/32K
150000 - 15FFFF
A8000 - AFFFF
SA30
64K/32K
160000 - 16FFFF
B0000 - B7FFF
SA31
64K/32K
170000 - 17FFFF
B8000 - BFFFF
SA32
64K/32K
180000 - 18FFFF
C0000 - C7FFF
SA33
64K/32K
190000 - 19FFFF
C8000 - CFFFF
SA34
64K/32K
1A0000 - 1AFFFF
D0000 - D7FFF
SA35
64K/32K
1B0000 - 1BFFFF
D8000 - DFFFF
SA36
64K/32K
1C0000 - 1CFFFF
E0000 - E7FFF
SA37
64K/32K
1D0000 - 1DFFFF
E8000 - EFFFF
SA38
64K/32K
1E0000 - 1EFFFF
F0000 - F7FFF
SA39
64K/32K
1F0000 - 1FFFFF
F8000 - FFFFF
Sector
8
AT49BV16X4(T)
AT49BV16X4(T)
Memory Plane B - Top Boot
Size (Bytes/Words)
x8
Address Range (A19 - A-1)
x16
Address Range (A19 - A0)
SA0
64K/32K
000000 - 00FFFF
00000 - 07FFF
SA1
64K/32K
010000 - 01FFFF
08000 - 0FFFF
SA2
64K/32K
020000 - 02FFFF
10000 - 17FFF
SA3
64K/32K
030000 - 03FFFF
18000 - 1FFFF
SA4
64K/32K
040000 - 04FFFF
20000 - 27FFF
SA5
64K/32K
050000 - 05FFFF
28000 - 2FFFF
SA6
64K/32K
060000 - 06FFFF
30000 - 37FFF
SA7
64K/32K
070000 - 07FFFF
38000 - 3FFFF
SA8
64K/32K
080000 - 08FFFF
40000 - 47FFF
SA9
64K/32K
090000 - 09FFFF
48000 - 4FFFF
SA10
64K/32K
0A0000 - 0AFFFF
50000 - 57FFF
SA11
64K/32K
0B0000 - 0BFFFF
58000 - 5FFFF
SA12
64K/32K
0C0000 - 0CFFFF
60000 - 67FFF
SA13
64K/32K
0D0000 - 0DFFFF
68000 - 6FFFF
SA14
64K/32K
0E0000 - 0EFFFF
70000 - 77FFF
SA15
64K/32K
0F0000 - 0FFFFF
78000 - 7FFFF
SA16
64K/32K
100000 - 10FFFF
80000 - 87FFF
SA17
64K/32K
110000 - 11FFFF
88000 - 8FFFF
SA18
64K/32K
120000 - 12FFFF
90000 - 97FFF
SA19
64K/32K
130000 - 13FFFF
98000 - 9FFFF
SA20
64K/32K
140000 - 14FFFF
A0000 - A7FFF
SA21
64K/32K
150000 - 15FFFF
A8000 - AFFFF
SA22
64K/32K
160000 - 16FFFF
B0000 - B7FFF
SA23
64K/32K
170000 - 17FFFF
B8000 - BFFFF
Sector
9
Memory Plane A - Top Boot
Size (Bytes/Words)
x8
Address Range (A19 - A-1)
x16
Address Range (A19 - A0)
SA24
64K/32K
180000 - 18FFFF
C0000 - C7FFF
SA25
64K/32K
190000 - 19FFFF
C8000 - CFFFF
SA26
64K/32K
1A0000 - 1AFFFF
D0000 - D7FFF
SA27
64K/32K
1B0000 - 1BFFFF
D8000 - DFFFF
SA28
64K/32K
1C0000 - 1CFFFF
E0000 - E7FFF
SA29
64K/32K
1D0000 - 1DFFFF
E8000 - EFFFF
SA30
32K/16K
1E0000 - 1E7FFF
F0000 - F3FFF
SA31
32K/16K
1E8000 - 1EFFFF
F4000 - F7FFF
SA32
8K/4K
1F0000 - 1F1FFF
F8000 - F8FFF
SA33
8K/4K
1F2000 - 1F3FFF
F9000 - F9FFF
SA34
8K/4K
1F4000 - 1F5FFF
FA000 - FAFFF
SA35
8K/4K
1F6000 - 1F7FFF
FB000 - FBFFF
SA36
8K/4K
1F8000 - 1F9FFF
FC000 - FCFFF
SA37
8K/4K
1FA000 - 1FBFFF
FD000 - FDFFF
SA38
8K/4K
1FC000 - 1FDFFF
FE000 - FEFFF
SA39
8K/4K
1FE000 - 1FFFFF
FF000 - FFFFF
Sector
10
AT49BV16X4(T)
AT49BV16X4(T)
DC and AC Operating Range
Com.
Operating
Temperature (Case)
Ind.
VCC Power Supply
AT49BV16X4-90
AT49BV16X4-12
0°C - 70°C
0°C - 70°C
-40°C - 85°C
-40°C - 85°C
2.7V to 3.6V
2.7V to 3.6V
Operating Modes
Mode
CE
OE
WE
RESET
VPP(6)
Ai
I/O
Read
VIL
VIL
VIH
VIH
X
Ai
DOUT
Program/
Erase(2)
VIL
VIH
VIL
VIH
5V ± 10%
Ai
DIN
Standby/Program
Inhibit
VIH
X(1)
X
VIH
X
X
High Z
Program Inhibit
X
X
VIH
VIH
VIL
Program Inhibit
X
VIL
X
VIH
VIL
Output Disable
X
VIH
X
VIH
X
Reset
X
X
X
VIL
X
High Z
X
High Z
Product Identification
Hardware
VIL
VIL
VIH
Software(5)
Notes:
VIH
VIH
A1 - A19 = VIL, A9 = VH(3)
A0 = VIL
Manufacturer Code(4)
A1 - A19 = VIL, A9 = VH(3)
A0 = VIH
Device Code(4)
A0 = VIL, A1 - A19 = VIL
Manufacturer Code(4)
A0 = VIH, A1 - A19 = VIL
Device Code(4)
1. X can be VIL or VIH.
2. Refer to AC Programming Waveforms.
3. VH = 12.0V ± 0.5V.
4. Manufacturer Code: 1FH (x8); 161F (x16), Device Code: C0H (x8); 16CO (x16).
5. See details under Software Product Identification Entry/Exit.
6. The use of the VPP pin is optional.
DC Characteristics
Symbol
Parameter
Condition
ILI
Input Load Current
ILO
Max
Units
VIN = 0V to VCC
10
µA
Output Leakage Current
VI/O = 0V to VCC
10
µA
ISB1
VCC Standby Current CMOS
CE = VCC - 0.3V to VCC
10
µA
ISB2
VCC Standby Current TTL
CE = 2.0V to VCC
1
mA
VCC Active Current
f = 5 MHz; IOUT = 0 mA
25
mA
ICCRW
VCC Read While Write Current
f = 5 MHz; IOUT = 0 mA
50
mA
VIL
Input Low Voltage
0.8
V
VIH
Input High Voltage
VOL
Output Low Voltage
IOL = 2.1 mA
VOH
Output High Voltage
IOH = -400 µA
Note:
1. In the erase mode, ICC is 50 mA.
ICC
(1)
Min
2.0
V
0.45
2.4
V
V
11
AC Read Characteristics
AT49BV16X4-90
Symbol
Parameter
tACC
Min
AT49BV16X4-12
Max
Min
Max
Units
Address to Output Delay
90
120
ns
(1)
CE to Output Delay
90
120
ns
(2)
OE to Output Delay
0
40
0
50
ns
tDF(3)(4)
CE or OE to Output Float
0
25
0
30
ns
tOH
Output Hold from OE, CE or Address, whichever occurred first
0
tRO
RESET to Output Delay
tCE
tOE
0
800
ns
800
ns
AC Read Waveforms(1)(2)(3)(4)
ADDRESS
ADDRESS VALID
CE
tCE
tOE
OE
tDF
tOH
tACC
tRO
RESET
OUTPUT
Notes:
HIGH Z
OUTPUT
VALID
1.
CE may be delayed up to tACC - tCE after the address transition without impact on tACC.
2.
OE may be delayed up to tCE - tOE after the falling edge of CE without impact on tCE or by tACC - tOE after an address change
without impact on tACC.
3.
tDF is specified from OE or CE whichever occurs first (CL = 5 pF).
4.
This parameter is characterized and is not 100% tested.
Input Test Waveforms and
Measurement Level
Output Test Load
tR, tF < 5 ns
Pin Capacitance
f = 1 MHz, T = 25°C(1)
Typ
Max
Units
CIN
4
6
pF
VIN = 0V
COUT
8
12
pF
VOUT = 0V
Note:
12
1. This parameter is characterized and is not 100% tested.
AT49BV16X4(T)
Conditions
AT49BV16X4(T)
AC Byte/Word Load Characteristics
Symbol
Parameter
Min
Max
Units
tAS, tOES
Address, OE Set-up Time
10
ns
tAH
Address Hold Time
100
ns
tCS
Chip Select Set-up Time
0
ns
tCH
Chip Select Hold Time
0
ns
tWP
Write Pulse Width (WE or CE)
100
ns
tDS
Data Set-up Time
100
ns
tDH, tOEH
Data, OE Hold Time
10
ns
tWPH
Write Pulse Width High
50
ns
AC Byte/Word Load Waveforms
WE Controlled
CE Controlled
13
Program Cycle Characteristics
Symbol
Parameter
Min
tBP
Byte/Word Programming Time
tAS
Address Set-up Time
tAH
Typ
Max
Units
20
50
µs
0
ns
Address Hold Time
100
ns
tDS
Data Set-up Time
100
ns
tDH
Data Hold Time
0
ns
tWP
Write Pulse Width
100
ns
tWPH
Write Pulse Width High
50
ns
tEC
Chip Erase Cycle Time
tSEC
Sector Erase Cycle Time
10
seconds
200
ms
Program Cycle Waveforms
PROGRAM CYCLE
OE
CE
tWP
tBP
tWPH
WE
tAS
A0 -A19
tAH
tDH
5555
5555
2AAA
5555
ADDRESS
tDS
DATA
55
AA
INPUT
DATA
A0
AA
Sector or Chip Erase Cycle Waveforms
OE
(1)
CE
tWP
tWPH
WE
tAS
A0-A19
tAH
tDH
5555
5555
5555
2AAA
Note 2
2AAA
tEC
tDS
DATA
Notes:
14
AA
55
80
AA
55
Note 3
WORD 0
WORD 1
WORD 2
WORD 3
WORD 4
WORD 5
1.
OE must be high only when WE and CE are both low.
2.
For chip erase, the address should be 5555. For sector erase, the address depends on what sector is to be erased. (See
note 3 under command definitions.)
3.
For chip erase, the data should be 10H, and for sector erase, the data should be 30H.
AT49BV16X4(T)
AT49BV16X4(T)
Data Polling Characteristics(1)
Symbol
Parameter
tDH
Data Hold Time
tOEH
OE Hold Time
Min
Max
OE to Output Delay
tWR
Write Recovery Time
Units
10
ns
10
ns
(2)
tOE
Notes:
Typ
ns
0
ns
1. These parameters are characterized and not 100% tested.
2. See tOE spec in AC Read Characteristics.
Data Polling Waveforms
Toggle Bit Characteristics(1)
Symbol
Parameter
tDH
Data Hold Time
10
ns
tOEH
OE Hold Time
10
ns
tOE
OE to Output Delay(2)
tOEHP
OE High Pulse
tWR
Write Recovery Time
Notes:
Min
Typ
Max
Units
ns
150
ns
0
ns
1. These parameters are characterized and not 100% tested.
2. See tOE spec in AC Read Characteristics.
Toggle Bit Waveforms(1)(2)(3)
Notes:
1.
Toggling either OE or CE or both OE and CE will operate toggle bit.
The tOEHP specification must be met by the toggling input(s).
2.
Beginning and ending state of I/O6 will vary.
3.
Any address location may be used but the address should not vary.
15
Status Bit Table
Status Bit
I/O 7
Read Address In
I/O 6
I/O 2
Plane A
Plane B
Plane A
Plane B
Plane A
Plane B
Programming in Plane A
I/O7
DATA
TOGGLE
DATA
1
DATA
Programming in Plane B
DATA
I/O7
DATA
TOGGLE
DATA
1
Erasing in Plane A
0
DATA
TOGGLE
DATA
TOGGLE
DATA
Erasing in Plane B
DATA
0
DATA
TOGGLE
DATA
TOGGLE
Erase Suspended & Read
Erasing Sector
1
1
1
1
TOGGLE
TOGGLE
Erase Suspended & Read
Non-Erasing Sector
DATA
DATA
DATA
DATA
DATA
DATA
1
1
1
1
TOGGLE
TOGGLE
Erase Suspended &
Program Non-Erasing
Sector in Plane A
I/O7
DATA
TOGGLE
DATA
TOGGLE
DATA
Erase Suspended &
Program Non-Erasing
Sector in Plane B
DATA
I/O7
DATA
TOGGLE
DATA
TOGGLE
While
Erase Suspended &
Program Erasing Sector
16
AT49BV16X4(T)
AT49BV16X4(T)
Ordering Information
ICC (mA)
tACC
(ns)
Active
Standby
90
25
0.01
25
120
25
25
90
25
25
120
25
25
0.01
0.01
0.01
0.01
0.01
0.01
0.01
Ordering Code
Package
AT49BV1604-90TC
AT49BV1604-90UC
48T
48U
AT49BV1614-90CC
AT49BV1614-90TC
48C2
48T
AT49BV1604-90TI
AT49BV1604-90UI
48T
48U
AT49BV1614-90CI
AT49BV1614-90TI
48C2
48T
AT49BV1604-12TC
AT49BV1604-12UC
48T
48U
AT49BV1614-12CC
AT49BV1614-12TC
48C2
48T
AT49BV1604-12TI
AT49BV1604-12UI
48T
48U
AT49BV1614-12CI
AT49BV1614-12TI
48C2
48T
AT49BV1604T-90TC
AT49BV1604T-90UC
48T
48U
AT49BV1614T-90CC
AT49BV1614T-90TC
48C2
48T
AT49BV1604T-90TI
AT49BV1604T-90UI
48T
48U
AT49BV1614T-90CI
AT49BV1614T-90TI
48C2
48T
AT49BV1604T-12TC
AT49BV1604T-12UC
48T
48U
AT49BV1614T-12CC
AT49BV1614T-12TC
48C2
48T
AT49BV1604T-12TI
AT49BV1604T-12UI
48T
48U
AT49BV1614T-12CI
AT49BV1614T-12TI
48C2
48T
Operation Range
Commercial
(0° to 70°C)
Industrial
(-40° to 85°C)
Commercial
(0° to 70°C)
Industrial
(-40° to 85°C)
Commercial
(0° to 70°C)
Industrial
(-40° to 85°C)
Commercial
(0° to 70°C)
Industrial
(-40° to 85°C)
Package Type
48C2
48-Ball, Plastic Chip-Size Ball Grid Array Package (CBGA)
48T
48-Lead, Thin Small Outline Package (TSOP)
48U
48-Ball, Micro Ball Grid Array Package (µBGA)
17
Packaging Information
48C2, 48-Ball, Plastic Chip-size Ball Grid Array
Package (CBGA)
48T, 48-Lead, Plastic Thin Small Outline Package
(TSOP) Dimensions in Millimeters and (Inches)*
JEDEC OUTLINE MO-142 DD
8.2
7.8
4.0
6
5
4
3
2
1
A
B
C
D
11.2
10.8
5.6
E
F
G
H
0.85
TYP
0.75
NON-ACCUMULATIVE
0.40 DIA TYP
0.35
1.2 MAX
*Controlling dimension: millimeters
48U, 48-Ball, Micro Ball Grid Array Package (µBGA)
6.8
6.4
3.75
F
E
D
C
B
A
1
2
3
8.4
8.0
4
5.25
5
6
7
8
0.75 TYP
NON-ACCUMULATIVE
0.15 MIN.
0.30 DIA TYP
1.00
0.85
0.70
18
AT49BV16X4(T)
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