Powerex Power CM400HU-24H Single igbtmod 400 amperes/1200 volt Datasheet

CM400HU-24H
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Single IGBTMOD™
U-Series Module
400 Amperes/1200 Volts
A
B
E
H
K
L
M 4 - Mounting
Holes
J
F
G
C
D G
E
E
C
CM
2 - M4 NUTS
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of one IGBT Transistor in a single
configuration with a reverse-connected super-fast recovery freewheel diode. All components and
interconnects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.
2 - M8 NUTS
TC Measured Point
N
P
E
Features:
□ Low Drive Power
□ Low VCE(sat)
□ Discrete Super-Fast Recovery
Free-Wheel Diode
□ Isolated Baseplate for Easy
Heat Sinking
C
E
G
Outline Drawing and Circuit Diagram
Dimensions
Inches
Millimeters
A
4.21
107.0
B
3.66±0.01
C
2.44
D
1.89±0.01
E
0.53
93.0±0.25
62.0
48.0±0.25
Dimensions
Inches
H
1.02
J
0.37
9.5
K
1.14
29.0
L
0.81
13.5
M
0.26 Dia.
Millimeters
26.0
20.5
6.5 Dia.
F
0.49
12.55
N
1.34 +0.04/-0.02
34 +1.0/-0.5
G
0.39
10.0
P
1.02 +0.04/-0.02
26 +1.0/-0.5
Applications:
□ AC Motor Control
□ Motion/Servo Control
□ UPS
□ Welding Power Supplies
□ Laser Power Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM400HU-24H is a
1200V (VCES), 400 Ampere Single
IGBTMOD™ Power Module.
Type
Current Rating
Amperes
VCES
Volts (x 50)
CM
400
24
7
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM400HU-24H
Single IGBTMOD™ U-Series Module
400 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Junction Temperature
Symbol
CM400HU-24H
Units
Tj
-40 to 150
°C
Tstg
-40 to 125
°C
Collector-Emitter Voltage (G-E SHORT)
VCES
1200
Volts
Gate-Emitter Voltage (C-E SHORT)
VGES
±20
Volts
IC
400
Amperes
ICM
800*
Amperes
IE
400
Amperes
Storage Temperature
Collector Current (Tc = 25°C)
Peak Collector Current (Tj ≤ 25°C)
Emitter Current** (Tc = 25°C)
Peak Emitter Current**
IEM
800*
Amperes
Maximum Collector Dissipation (Tc = 25°C)
Pc
2100
Watts
Mounting Torque, M6 Main Terminal, M6 Mounting
–
40
in-lb
Mounting Torque, M4 Terminal
–
15
in-lb
–
450
Grams
Viso
2500
Volts
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Cutoff Current
ICES
VCE = VCES, VGE = 0V
–
–
2
mA
Gate Leakage Voltage
IGES
VGE = VGES, VCE = 0V
–
–
0.5
µA
Gate-Emitter Threshold Voltage
VGE(th)
IC = 40mA, VCE = 10V
4.5
6
7.5
Volts
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 400A, VGE = 15V, Tj = 25°C
–
2.9
3.7
Volts
IC = 400A, VGE = 15V, Tj = 125°C
–
–
Volts
Total Gate Charge
QG
VCC = 600V, IC = 400A, VGE = 15V
–
1500
–
nC
Emitter-Collector Voltage*
VEC
IE = 400A, VGE = 0V
–
–
2.85
3.2
Volts
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Input Capacitance
Cies
Output Capacitance
Coes
Reverse Transfer Capacitance
Cres
Resistive
Turn-on Delay Time
td(on)
Load
Rise Time
tr
Switch
Turn-off Delay Time
Times
Fall Time
Test Conditions
Min.
Typ.
Max.
–
–
60
nf
–
–
21
nf
–
–
12
nf
VCC = 600V, IC = 400A,
–
–
250
ns
VGE1 = VGE2 = 15V,
–
–
350
ns
VCE = 10V, VGE = 0V
Units
td(off)
RG = 0.78V, Resistive
–
–
350
ns
tf
Load Switching Operation
–
–
350
ns
Diode Reverse Recovery Time
trr
IE = 400A, diE/dt = -800A/µs
–
–
300
ns
Diode Reverse Recovery Charge
Qrr
IE = 400A, diE/dt = -800A/µs
–
2.2
–
µC
Max.
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Min.
Typ.
Thermal Resistance, Junction to Case
Rth(j-c)Q
Per IGBT Module
–
–
0.06
°C/W
Thermal Resistance, Junction to Case
Rth(j-c)D
Per FWDi Module
–
–
0.09
°C/W
Rth(c-f)
Per Module, Thermal Grease Applied
–
0.02
–
°C/W
Contact Thermal Resistance
8
Symbol
Test Conditions
Units
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM400HU-24H
Single IGBTMOD™ U-Series Module
400 Amperes/1200 Volts
OUTPUT CHARACTERISTICS
(TYPICAL)
800
12
VGE = 20V
600
11
400
10
9
200
8
0
2
4
6
8
600
400
200
VGE = 15V
Tj = 25°C
Tj = 125°C
4
3
2
1
0
0
10
4
8
12
16
240
0
20
480
720
960
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
CAPACITANCE VS. VCE
(TYPICAL)
103
10
102
2
IC = 160A
101
1.0
0
103
4
8
12
16
20
2.5
3.0
3.5
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
103
td(off)
td(on)
VCC = 600V
VGE = ±15V
RG = 0.78 Ω
Tj = 125°C
102
COLLECTOR CURRENT, IC, (AMPERES)
103
Irr
101
101
101
102
EMITTER CURRENT, IE, (AMPERES)
100
Cres
VGE = 0V
f = 1MHz
100
101
102
GATE CHARGE, VGE
di/dt = -800A/µsec
Tj = 25°C
trr
Coes
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
102
102
101
10-1
10-1
4.0
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
tr
101
101
2.0
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
tf
102
1.5
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
REVERSE RECOVERY TIME, trr, (ns)
0
CAPACITANCE, Cies, Coes, Cres, (nF)
4
102
Cies
100
103
20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
IC = 400A
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
IC = 800A
8
6
1200
Tj = 25°C
Tj = 25°C
EMITTER CURRENT, IE, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
VCE = 10V
Tj = 25°C
Tj = 125°C
0
0
SWITCHING TIME, (ns)
5
15
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
Tj = 25oC
COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR CURRENT, IC, (AMPERES)
800
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
IC = 400A
16
VCC = 400V
12
VCC = 600V
8
4
0
0
400
800
1200
1600
2000
GATE CHARGE, QG, (nC)
9
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
10-3
101
100
10-2
10-1
100
10-1
10-1
10-2
10-2
10-3
10-5
TIME, (s)
10
101
Single Pulse
TC = 25°C
Per Unit Base = Rth(j-c) = 0.06°C/W
10-4
10-3
10-3
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c)
Zth = Rth • (NORMALIZED VALUE)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c)
Zth = Rth • (NORMALIZED VALUE)
CM400HU-24H
Single IGBTMOD™ U-Series Module
400 Amperes/1200 Volts
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
10-3
101
100
10-2
10-1
100
101
Single Pulse
TC = 25°C
Per Unit Base = Rth(j-c) = 0.09°C/W
10-1
10-1
10-2
10-2
10-3
10-5
TIME, (s)
10-4
10-3
10-3
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