FUJITSU SEMICONDUCTOR DATA SHEET DS05-20877-1E FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT MBM29SL160TD-10/-12/MBM29SL160BD-10/-12 ■ FEATURES • Single 1.8 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard world-wide pinouts 48-pin TSOP(I) (Package suffix: PFTN – Normal Bend Type, PFTR – Reversed Bend Type) 48-ball FBGA (Package suffix: PBT) • Minimum 100,000 program/erase cycles • High performance 100 ns maximum access time • Sector erase architecture Eight 4K word and thirty one 32K word sectors in word mode Eight 8K byte and thirty one 64K byte sectors in byte mode Any combination of sectors can be concurrently erased. Also supports full chip erase. • Boot Code Sector Architecture T = Top sector B = Bottom sector • One Time Protect (OTP) region 256 Byte of OTP, accessible through a new “OTP Enable” command sequence Factory serialized and protected to provide a secure electronic serial number (ESN) • WP/ACC input pin At VIL, allows protection of boot sectors, regardless of sector protection/unprotection status At VIH, allows removal of boot sector protection At VHH, increases program performance • Embedded EraseTM Algorithms Automatically pre-programs and erases the chip or any sector • Embedded ProgramTM Algorithms Automatically writes and verifies data at specified address • Data Polling and Toggle Bit feature for detection of program or erase cycle completion • Ready/Busy output (RY/BY) Hardware method for detection of program or erase cycle completion (Continued) Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc. MBM29SL160TD-10/-12/MBM29SL160BD-10/-12 (Continued) • Automatic sleep mode When addresses remain stable, automatically switch themselves to low power mode. • Erase Suspend/Resume Suspends the erase operation to allow a read in another sector within the same device • Sector group protection Hardware method disables any combination of sector groups from program or erase operations • Sector Group Protection Set function by Extended sector group protection command • Fast Programming Function by Extended Command • Temporary sector group unprotection Temporary sector group unprotection via the RESET pin. • In accordance with CFI (Common Flash Memory Interface) ■ PACKAGE 48-pin plastic TSOP (I) 48-pin plastic TSOP (I) Marking Side Marking Side (FPT-48P-M19) (FPT-48P-M20) 48-ball FBGA (BGA-48P-M13) 2 MBM29SL160TD-10/-12/MBM29SL160BD-10/-12 ■ GENERAL DESCRIPTION The MBM29SL160TD/BD are a 16M-bit, 1.8 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29SL160TD/BD are offered in a 48-pin TSOP(I) and 48-ball FBGA Package. These devices are designed to be programmed in-system with the standard system 1.8 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be reprogrammed in standard EPROM programmers. The standard MBM29SL160TD/BD offer access times 100 ns and 120 ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention the devices have separate chip enable (CE), write enable (WE), and output enable (OE) controls. The MBM29SL160TD/BD are pin and command set compatible with JEDEC standard E2PROMs. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the devices is similar to reading from 5.0 V and 12.0 V Flash or EPROM devices. The MBM29SL160TD/BD are programmed by executing the program command sequence. This will invoke the Embedded Program Algorithm which is an internal algorithm that automatically times the program pulse widths and verifies proper cell margin. Typically, each sector can be programmed and verified in about 0.7 seconds. Erase is accomplished by executing the erase command sequence. This will invoke the Embedded Erase Algorithm which is an internal algorithm that automatically preprograms the array if it is not already programmed before executing the erase operation. During erase, the devices automatically time the erase pulse widths and verify proper cell margin. A sector is typically erased and verified in 1.5 second. (If already completely preprogrammed.) The devices also feature a sector erase architecture. The sector mode allows each sector to be erased and reprogrammed without affecting other sectors. The MBM29SL160TD/BD are erased when shipped from the factory. The devices feature single 1.8 V power supply operation for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. A low VCC detector automatically inhibits write operations on the loss of power. The end of program or erase is detected by Data Polling of DQ7, by the Toggle Bit feature on DQ6, or the RY/BY output pin. Once the end of a program or erase cycle has been completed, the devices internally reset to the read mode. Fujitsu’s Flash technology combines years of EPROM and E2PROM experience to produce the highest levels of quality, reliability, and cost effectiveness. The MBM29SL160TD/BD memories electrically erase the entire chip or all bits within a sector simultaneously via Fowler-Nordhiem tunneling. The bytes/words are programmed one byte/word at a time using the EPROM programming mechanism of hot electron injection. 3 MBM29SL160TD-10/-12/MBM29SL160BD-10/-12 Table 1 .1 Sector Address Tables (MBM29SL160TD) Sector Address Sector SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10 SA11 SA12 SA13 SA14 SA15 SA16 SA17 SA18 SA19 SA20 SA21 SA22 SA23 SA24 SA25 SA26 SA27 SA28 SA29 SA30 SA31 SA32 SA33 SA34 SA35 SA36 SA37 SA38 A19 A18 A17 A16 A15 A14 A13 A12 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 1 1 1 1 1 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 1 1 1 1 1 1 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 1 1 1 1 1 1 1 X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X 0 0 0 0 1 1 1 1 X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X 0 0 1 1 0 0 1 1 X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X 0 1 0 1 0 1 0 1 Sector Size (Kbytes/ Kwords) (×8) Address Range (×16) Address Range 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 8/4 8/4 8/4 8/4 8/4 8/4 8/4 8/4 000000H to 00FFFFH 010000H to 01FFFFH 020000H to 02FFFFH 030000H to 03FFFFH 040000H to 04FFFFH 050000H to 05FFFFH 060000H to 06FFFFH 070000H to 07FFFFH 080000H to 08FFFFH 090000H to 09FFFFH 0A0000H to 0AFFFFH 0B0000H to 0BFFFFH 0C0000H to 0CFFFFH 0D0000H to 0DFFFFH 0E0000H to 0EFFFFH 0F0000H to 0FFFFFH 100000H to 10FFFFH 110000H to 11FFFFH 120000H to 12FFFFH 130000H to 13FFFFH 140000H to 14FFFFH 150000H to 15FFFFH 160000H to 16FFFFH 170000H to 17FFFFH 180000H to 18FFFFH 190000H to 19FFFFH 1A0000H to 1AFFFFH 1B0000H to 1BFFFFH 1C0000H to 1CFFFFH 1D0000H to 1DFFFFH 1E0000H to 1EFFFFH 1F0000H to 1F1FFFH 1F2000H to 1F3FFFH 1F4000H to 1F5FFFH 1F6000H to 1F7FFFH 1F8000H to 1F9FFFH 1FA000H to 1FBFFFH 1FC000H to 1FDFFFH 1FE000H to 1FFFFFH 000000H to 007FFFH 008000H to 00FFFFH 010000H to 017FFFH 018000H to 01FFFFH 020000H to 027FFFH 028000H to 02FFFFH 030000H to 037FFFH 038000H to 03FFFFH 040000H to 048000H 048000H to 04FFFFH 050000H to 058000H 058000H to 05FFFFH 060000H to 068000H 068000H to 06FFFFH 070000H to 078FFFH 078000H to 07FFFFH 080000H to 088000H 088000H to 08FFFFH 090000H to 098000H 098000H to 09FFFFH 0A0000H to 0A7FFFH 0A8000H to 00AFFFH 0B0000H to 0B7000H 0B8000H to 0BFFFFH 0C0000H to 0C7FFFH 0C8000H to 0CFFFFH 0D0000H to 0D7FFFH 0D8000H to 0DFFFFH 0E0000H to 0E7FFFH 0E8000H to 0EFFFFH 0F0000H to 0F7000H 0F8000H to 0F8FFFH 0F9000H to 0F9FFFH 0FA000H to 0FAFFFH 0FB000H to 0FBFFFH 0FC000H to 0FCFFFH 0FD000H to 0FDFFFH 0FE000H to 0FEFFFH 0FF000H to 0FFFFFH Note: The address range is A19: A-1 if in byte mode (BYTE = VIL). The address range is A19: A0 if in word mode (BYTE = VIH) 4 MBM29SL160TD-10/-12/MBM29SL160BD-10/-12 Table 1 .2 Sector Address Tables (MBM29SL160BD) Sector Address Sector SA38 SA37 SA36 SA35 SA34 SA33 SA32 SA31 SA30 SA29 SA28 SA27 SA26 SA25 SA24 SA23 SA22 SA21 SA20 SA19 SA18 SA17 SA16 SA15 SA14 SA13 SA12 SA11 SA10 SA9 SA8 SA7 SA6 SA5 SA4 SA3 SA2 SA1 SA0 A19 A18 A17 A16 A15 A14 A13 A12 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 0 0 0 0 0 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 0 0 0 0 0 0 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 X 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 0 0 0 0 0 0 0 X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X 1 1 1 1 0 0 0 0 X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X 1 1 0 0 1 1 0 0 X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X 1 0 1 0 1 0 1 0 Sector Size (Kbytes/ Kwords) (×8) Address Range (×16) Address Range 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 8/4 8/4 8/4 8/4 8/4 8/4 8/4 8/4 1F0000H to 1FFFFFH 1E0000H to 1EFFFFH 1D0000H to 1DFFFFH 1C0000H to 1CFFFFH 1B0000H to 1BFFFFH 1A0000H to 1AFFFFH 190000H to 19FFFFH 180000H to 18FFFFH 170000H to 17FFFFH 160000H to 16FFFFH 150000H to 15FFFFH 140000H to 14FFFFH 130000H to 13FFFFH 120000H to 12FFFFH 110000H to 11FFFFH 100000H to 10FFFFH 0F0000H to 0FFFFFH 0E0000H to 0EFFFFH 0D0000H to 0DFFFFH 0C0000H to 0CFFFFH 0B0000H to 0BFFFFH 0A0000H to 0AFFFFH 090000H to 0FFFFFH 080000H to 08FFFFH 070000H to 07FFFFH 060000H to 06FFFFH 050000H to 05FFFFH 040000H to 04FFFFH 030000H to 03FFFFH 020000H to 02FFFFH 010000H to 01FFFFH 00E000H to 00FFFFH 00C000H to 00DFFFH 00A000H to 00BFFFH 008000H to 009FFFH 006000H to 007FFFH 004000H to 005FFFH 002000H to 003FFFH 000000H to 001FFFH 0F8000H to 0FFFFFH 0F0000H to 0F7FFFH 0E8000H to 0EFFFFH 0E0000H to 0E7FFFH 0D8000H to 0DFFFFH 0D0000H to 0D7FFFH 0C8000H to 0CFFFFH 0C0000H to 0C7FFFH 0B8000H to 0BFFFFH 0B0000H to 0B7FFFH 0A8000H to 0AFFFFH 0A0000H to 0A7FFFH 098000H to 09FFFFH 090000H to 097FFFH 088000H to 08FFFFH 080000H to 087FFFH 078000H to 07FFFFH 070000H to 077FFFH 068000H to 06FFFFH 060000H to 067FFFH 058000H to 05FFFFH 050000H to 057FFFH 048000H to 04FFFFH 040000H to 047FFFH 038000H to 03FFFFH 030000H to 037FFFH 028000H to 02FFFFH 020000H to 027FFFH 018000H to 01FFFFH 010000H to 017FFFH 008000H to 008FFFH 007000H to 007FFFH 006000H to 006FFFH 005000H to 005FFFH 004000H to 004FFFH 003000H to 003FFFH 002000H to 002FFFH 001000H to 001FFFH 000000H to 000FFFH Note: The address range is A19: A-1 if in byte mode (BYTE = VIL). The address range is A19: A0 if in word mode (BYTE = VIH). 5 MBM29SL160TD-10/-12/MBM29SL160BD-10/-12 Table 2 .1 Sector Group A19 A18 A17 A16 A15 A14 A13 A12 Sectors SGA0 0 0 0 0 0 X X X SA0 0 0 0 0 1 X X X 0 0 0 1 0 X X X 0 0 0 1 1 X X X SGA2 0 0 1 X X X X X SA4 to SA7 SGA3 0 1 0 X X X X X SA8 to SA11 SGA4 0 1 1 X X X X X SA12 to SA15 SGA5 1 0 0 X X X X X SA16 to SA19 SGA6 1 0 1 X X X X X SA20 to SA23 SGA7 1 1 0 X X X X X SA24 to SA27 1 1 1 0 0 X X X 1 1 1 0 1 X X X 1 1 1 1 0 X X X SGA9 1 1 1 1 1 0 0 0 SA31 SGA10 1 1 1 1 1 0 0 1 SA32 SGA11 1 1 1 1 1 0 1 0 SA33 SGA12 1 1 1 1 1 0 1 1 SA34 SGA13 1 1 1 1 1 1 0 0 SA35 SGA14 1 1 1 1 1 1 0 1 SA36 SGA15 1 1 1 1 1 1 1 0 SA37 SGA16 1 1 1 1 1 1 1 1 SA38 SGA1 SGA8 6 Sector Group Addresses (MBM29SL160TD) (Top Boot Block) SA1 to SA3 SA28 to SA30 MBM29SL160TD-10/-12/MBM29SL160BD-10/-12 Table 2 .2 Sector Group Addresses (MBM29SL160BD) (Bottom Boot Block) Sector Group A19 A18 A17 A16 A15 A14 A13 A12 Sectors SGA0 0 0 0 0 0 0 0 0 SA0 SGA1 0 0 0 0 0 0 0 1 SA1 SGA2 0 0 0 0 0 0 1 0 SA2 SGA3 0 0 0 0 0 0 1 1 SA3 SGA4 0 0 0 0 0 1 0 0 SA4 SGA5 0 0 0 0 0 1 0 1 SA5 SGA6 0 0 0 0 0 1 1 0 SA6 SGA7 0 0 0 0 0 1 1 1 SA7 0 0 0 0 1 X X X 0 0 0 1 0 X X X 0 0 0 1 1 X X X SGA9 0 0 1 X X X X X SA11 to SA14 SGA10 0 1 0 X X X X X SA15 to SA18 SGA11 0 1 1 X X X X X SA19 to SA22 SGA12 1 0 0 X X X X X SA23 to SA26 SGA13 1 0 1 X X X X X SA27 to SA30 SGA14 1 1 0 X X X X X SA31 to SA34 1 1 1 0 0 X X X 1 1 1 0 1 X X X 1 1 1 1 0 X X X 1 1 1 1 1 X X X SGA8 SGA15 SGA16 SA8 to SA10 SA35 to SA37 SA38 7 MBM29SL160TD-10/-12/MBM29SL160BD-10/-12 ■ PRODUCT LINE UP Part No. Ordering Part No. MBM29SL160TD/MBM29SL160BD VCC = 2.0 V±0.2V -10 -12 Max. Address Access Time (ns) 100 120 Max. CE Access Time (ns) 100 120 Max. OE Access Time (ns) 35 50 ■ BLOCK DIAGRAM RY/BY Buffer DQ 0 to DQ 15 RY/BY V CC V SS Erase Voltage Generator Input/Output Buffers WE BYTE State Control RESET WP/ACC Command Register Program Voltage Generator Chip Enable Output Enable Logic CE OE STB Low V CC Detector A0 to A19 A-1 8 Timer for Program/Erase Address Latch STB Data Latch Y-Decoder Y-Gating X-Decoder Cell Matrix MBM29SL160TD-10/-12/MBM29SL160BD-10/-12 ■ CONNECTION DIAGRAMS TSOP(I) A15 A14 A13 A12 A11 A10 A9 A8 A19 N.C. WE RESET NC WP/ACC RY/BY A18 A17 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 (Marking Side) MBM29SL160TD/MBM29SL160BD Standard Pinout 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 A16 BYTE VSS DQ 15/A-1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 OE VSS CE A0 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 A0 CE VSS OE DQ0 DQ8 DQ1 DQ9 DQ2 DQ10 DQ3 DQ11 VCC DQ4 DQ12 DQ5 DQ13 DQ6 DQ14 DQ7 DQ15/A-1 VSS BYTE A16 FPT-48P-M19 A1 A2 A3 A4 A5 A6 A7 A17 A18 RY/BY WP/ACC N.C. RESET WE N.C. A19 A8 A9 A10 A11 A12 A13 A14 A15 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 (Marking Side) MBM29SL160TD/MBM29SL160BD Reverse Pinout FPT-48P-M20 9 MBM29SL160TD-10/-12/MBM29SL160BD-10/-12 (Continued) FBGA (TOP VIEW) Marking side A1 A2 A3 A4 A5 A6 B1 B2 B3 B4 B5 B6 C1 C2 C3 C4 C5 C6 D1 D2 D3 D4 D5 D6 E1 E2 E3 E4 E5 E6 F1 F2 F3 F4 F5 F6 G1 G2 G3 G4 G5 G6 H1 H2 H3 H4 H5 H6 (BGA-48P-M03) 10 A1 A3 A2 A7 A3 RY/BY B1 A4 B2 A17 B3 C1 A2 C2 A6 D1 A1 D2 E1 A0 F1 A4 WE A5 A9 A6 A13 WP/ACC B4 RESET B5 A8 B6 A12 C3 A18 C4 N.C. C5 A10 C6 A14 A5 D3 N.C. D4 A19 D5 A11 D6 A15 E2 DQ0 E3 DQ2 E4 DQ5 E5 DQ7 E6 A16 CE F2 DQ8 F3 DQ10 F4 DQ12 F5 DQ14 F6 BYTE G1 OE G2 DQ9 G3 DQ11 G4 VCC G5 DQ13 G6 DQ15/A-1 H1 VSS H2 DQ1 H3 DQ3 H4 DQ4 H5 DQ6 H6 VSS MBM29SL160TD-10/-12/MBM29SL160BD-10/-12 ■ LOGIC SYMBOL Table 3 MBM29SL160TD/BD Pin Configuration Pin A–1 20 16 or 8 A0 to A19 DQ0 to DQ15 CE OE WE RESET BYTE Function A-1, A0 to A19 Address Inputs DQ0 to DQ15 Data Inputs/Outputs CE Chip Enable OE Output Enable WE Write Enable RY/BY Ready/Busy Output RESET Hardware Reset Pin/Temporary Sector Group Unprotection RY/BY WP/ACC BYTE WP/ACC Selects 8-bit or 16-bit mode Hardware Write Protection/Program Acceleration N.C. No Internal Connection VSS Device Ground VCC Device Power Supply 11 MBM29SL160TD-10/-12/MBM29SL160BD-10/-12 Table 4 MBM29SL160TD/BD User Bus Operations (BYTE = VIH) Operation CE OE WE A0 A1 A6 A9 DQ0 to DQ15 RESET WP/ACC Auto-Select Manufacturer Code (1) L L H L L L VID Code H X Auto-Select Device Code (1) L L H H L L VID Code H X Read (3) L L H A0 A1 A6 A9 DOUT H X Standby H X X X X X X HIGH-Z H X Output Disable L H H X X X X HIGH-Z H X Write (Program/Erase) L H L A0 A1 A6 A9 DIN H X Enable Sector Group Protection (2), (4) L VID L H L VID X H X Verify Sector Group Protection (2), (4) L L H L H L VID Code H X Temporary Sector Group Unprotection (5) X X X X X X X X VID X Reset (Hardware)/Standby X X X X X X X HIGH-Z L X Boot Block Sector Write Protection X X X X X X X X X L Table 5 MBM29SL160TD/BD User Bus Operations (BYTE = VIL) Operation 15/ CE OE WE DQ A-1 A0 A1 A6 A9 DQ0 to DQ7 RESET WP/ACC Auto-Select Manufacturer Code (1) L L H L L L L VID Code H X Auto-Select Device Code (1) L L H L H L L VID Code H X Read (3) L L H A-1 A0 A1 A6 A9 DOUT H X Standby H X X X X X X X HIGH-Z H X Output Disable L H H X X X X X HIGH-Z H X Write (Program/Erase) L H L A-1 A0 A1 A6 A9 DIN H X Enable Sector Group Protection (2), (4) L VID L L H L VID X H X Verify Sector Group Protection (2), (4) L L H L L H L VID Code H X Temporary Sector Group Unprotection (5) X X X X X X X X X VID X Reset (Hardware)/Standby X X X X X X X X HIGH-Z L X Boot Block Sector Write Protection X X X X X X X X X X L Legend: L = VIL, H = VIH, X = VIL or VIH, = Pulse input. See DC Characteristics for voltage levels. Notes: 1. Manufacturer and device codes may also be accessed via a command register write sequence. See Table 7. 2. Refer to the section on Sector Group Protection. 3. WE can be VIL if OE is VIL, OE at VIH initiates the write operations. 4. VCC = 2.0 V ± 10% 5. It is also used for the extended sector group protection. 12 MBM29SL160TD-10/-12/MBM29SL160BD-10/-12 ■ FUNCTIONAL DESCRIPTION Read Mode The MBM29SL160TD/BD have two control functions which must be satisfied in order to obtain data at the outputs. CE is the power control and should be used for a device selection. OE is the output control and should be used to gate data to the output pins if a device is selected. Address access time (tACC) is equal to the delay from stable addresses to valid output data. The chip enable access time (tCE) is the delay from stable addresses and stable CE to valid data at the output pins. The output enable access time is the delay from the falling edge of OE to valid data at the output pins. (Assuming the addresses have been stable for at least tACC-tOE time.) When reading out a data without changing addresses after power-up, it is necessary to input hardware reset or to change CE pin from “H” to “L” Standby Mode There are two ways to implement the standby mode on the MBM29SL160TD/BD devices, one using both the CE and RESET pins; the other via the RESET pin only. When using both pins, a CMOS standby mode is achieved with CE and RESET inputs both held at VCC ± 0.3 V. Under this condition the current consumed is less than 5 µA max. During Embedded Algorithm operation, VCC active current (ICC2) is required even CE = “H”. The device can be read with standard access time (tCE) from either of these standby modes. When using the RESET pin only, a CMOS standby mode is achieved with RESET input held at VSS ± 0.3 V (CE = “H” or “L”). Under this condition the current is consumed is less than 5 µA max. Once the RESET pin is taken high, the device requires tRH of wake up time before outputs are valid for read access. In the standby mode the outputs are in the high impedance state, independent of the OE input. Automatic Sleep Mode There is a function called automatic sleep mode to restrain power consumption during read-out of MBM29SL160TD/BD data. This mode can be used effectively with an application requested low power consumption such as handy terminals. To activate this mode, MBM29SL160TD/BD automatically switch themselves to low power mode when MBM29SL160TD/BD addresses remain stably during access fine of 150 ns. It is not necessary to control CE, WE, and OE on the mode. Under the mode, the current consumed is typically 1 µA (CMOS Level). During simultaneous operation, VCC active current (ICC2) is required. Since the data are latched during this mode, the data are read-out continuously. If the addresses are changed, the mode is canceled automatically and MBM29SL160TD/BD read-out the data for changed addresses. Output Disable With the OE input at a logic high level (VIH), output from the devices are disabled. This will cause the output pins to be in a high impedance state. Autoselect The autoselect mode allows the reading out of a binary code from the devices and will identify its manufacturer and type. This mode is intended for use by programming equipment for the purpose of automatically matching the devices to be programmed with its corresponding programming algorithm. This mode is functional over the entire temperature range of the devices. To activate this mode, the programming equipment must force VID (10 V to 11 V) on address pin A9. Two identifier bytes may then be sequenced from the devices outputs by toggling address A0 from VIL to VIH. All addresses are DON’T CARES except A0, A1, and A6 (A-1). (See Tables 4 and 5.) 13 MBM29SL160TD-10/-12/MBM29SL160BD-10/-12 The manufacturer and device codes may also be read via the command register, for instances when the MBM29SL160TD/BD are erased or programmed in a system without access to high voltage on the A9 pin. The command sequence is illustrated in Table 7. (Refer to Autoselect Command section.) Word 0 (A0 = VIL) represents the manufacturer’s code (Fujitsu = 04H) and word 1 (A0 = VIH) represents the device identifier code (MBM29SL160TD = E4H and MBM29SL160BD = E7H for ×8 mode; MBM29SL160TD = 22E4H and MBM29SL160BD = 22E7H for ×16 mode). These two bytes/words are given in the tables 6.1 to 6.2. All identifiers for manufactures and device will exhibit odd parity with DQ7 defined as the parity bit. In order to read the proper device codes when executing the autoselect, A1 must be VIL. (See Tables 6.1 to 6.2.) Table 6 .1 MBM29SL160TD/BD Sector Group Protection Verify Autoselect Codes Type A12 to A19 A6 A1 A0 A-1*1 Code (HEX) X VIL VIL VIL VIL 04H VIL E4H X VIL VIL VIH X 22E4H VIL E7H X 22E7H VIL 01H*2 Manufacture’s Code Byte MBM29SL160TD Word Device Code Byte MBM29SL160BD X VIL VIL VIH Word Sector Group Addresses Sector Group Protection VIH VIL VIL *1: A-1 is for Byte mode. *2: Outputs 01H at protected sector group addresses and outputs 00H at unprotected sector group addresses. Table 6 .2 Type Code Manufacturer’s Code 04H (B) Expanded Autoselect Code Table DQ15 DQ14 DQ13 DQ12 DQ11 DQ10 DQ9 DQ8 DQ7 DQ6 DQ5 DQ4 DQ3 DQ2 DQ1 DQ0 0 0 0 0 0 1 0 0 E4H A-1 HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z 1 1 1 0 0 1 0 0 1 1 1 0 0 1 0 0 E7H A-1 HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z 1 1 1 0 0 1 1 1 A-1/0 0 0 0 0 0 0 0 MBM29SL160TD (W) 22E4H 0 Device Code (B) 0 1 0 0 0 1 0 MBM29SL160BD (W) 22E7H 0 Sector Group Protection (B): Byte mode (W): Word mode 14 01H A-1/0 0 1 0 0 0 1 0 1 1 1 0 0 1 1 1 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 MBM29SL160TD-10/-12/MBM29SL160BD-10/-12 Write Device erasure and programming are accomplished via the command register. The contents of the register serve as inputs to the internal state machine. The state machine outputs dictate the function of the device. The command register itself does not occupy any addressable memory location. The register is a latch used to store the commands, along with the address and data information needed to execute the command. The command register is written by bringing WE to VIL, while CE is at VIL and OE is at VIH. Addresses are latched on the falling edge of WE or CE, whichever happens later; while data is latched on the rising edge of WE or CE, whichever happens first. Standard microprocessor write timings are used. Refer to AC Write Characteristics and the Erase/Programming Waveforms for specific timing parameters. Sector Group Protection The MBM29SL160TD/BD feature hardware sector group protection. This feature will disable both program and erase operations in any combination of seventeen sector groups of memory. (See Tables 2.1 and 2.2). The sector group protection feature is enabled using programming equipment at the user’s site. The device is shipped with all sector groups unprotected. To activate this mode, the programming equipment must force VID on address pin A9 and control pin OE, (suggest VID = 10V to 11V), CE = VIL and A0 = A6 = VIL, A1 = VIH. The sector group addresses (A19, A18, A17, A16, A15, A14, A13, and A12) should be set to the sector to be protected. Tables 1.1 and 1.2 define the sector address for each of the thirty nine (39) individual sectors, and tables 2.1 and 2.2 define the sector group address for each of the seventeen (17) individual group sectors. Programming of the protection circuitry begins on the falling edge of the WE pulse and is terminated with the rising edge of the same. Sector group addresses must be held constant during the WE pulse. See figures 16 and 25 for sector group protection waveforms and algorithm. To verify programming of the protection circuitry, the programming equipment must force VID on address pin A9 with CE and OE at VIL and WE at VIH. Scanning the sector group addresses (A19, A18, A17, A16, A15, A14, A13, and A12) while (A6, A1, A0) = (0, 1, 0) will produce a logical “1” code at device output DQ0 for a protected sector. Otherwise the device will produce “0” for unprotected sector. In this mode, the lower order addresses, except for A0, A1, and A6 are DON’T CARES. Address locations with A1 = VIL are reserved for Autoselect manufacturer and device codes. A-1 requires to apply to VIL on byte mode. It is also possible to determine if a sector group is protected in the system by writing an Autoselect command. Performing a read operation at the address location XX02H, where the higher order addresses (A19, A18, A17, A16, A15, A14, A13, and A12) are the desired sector group address will produce a logical “1” at DQ0 for a protected sector group. See Tables 6.1 and 6.2 for Autoselect codes. Temporary Sector Group Unprotection This feature allows temporary unprotection of previously protected sector groups of the MBM29SL160TD/BD devices in order to change data. The Sector Group Unprotection mode is activated by setting the RESET pin to high voltage (VID). During this mode, formerly protected sector groups can be programmed or erased by selecting the sector group addresses. Once the VID is taken away from the RESET pin, all the previously protected sector groups will be protected again. Refer to Figures 17 and 26. 15 MBM29SL160TD-10/-12/MBM29SL160BD-10/-12 RESET Hardware Reset The MBM29SL160TD/BD devices may be reset by driving the RESET pin to VIL. The RESET pin has a pulse requirement and has to be kept low (VIL) for at least “tRP” in order to properly reset the internal state machine. Any operation in the process of being executed will be terminated and the internal state machine will be reset to the read mode “tREADY” after the RESET pin is driven low. Furthermore, once the RESET pin goes high, the devices require an additional “tRH” before it will allow read access. When the RESET pin is low, the devices will be in the standby mode for the duration of the pulse and all the data output pins will be tri-stated. If a hardware reset occurs during a program or erase operation, the data at that particular location will be corrupted. Please note that the RY/BY output signal should be ignored during the RESET pulse. See Figure 12 for the timing diagram. Refer to Temporary Sector Group Unprotection for additional functionality. Boot Block Sector Protection The Write Protection function provides a hardware method of protecting certain boot sectors without using VID. This function is one of two provided by the WP/ACC pin. If the system asserts VIL on the WP/ACC pin, the device disables program and erase functions in the two “outermost” 8K byte boot sectors independently of whether those sectors were protected or unprotected using the method described in “Sector Protection/Unprotection”. The two outermost 8K byte boot sectors are the two sectors containing the lowest addresses in a bottom-boot-configured device, or the two sectors containing the highest addresses in a top-boot-congfigured device. (MBM29SL160TD: SA37 and SA38, MBM29SL160BD: SA0 and SA1) If the system asserts VIH on the WP/ACC pin, the device reverts to whether the two outermost 8K byte boot sectors were last set to be protected or unprotected. That is, sector protection or unprotection for these two sectors depends on whether they were last protected or unprotected using the method described in “Sector protection/unprotection”. Accelerated Program Operation The device offers accelerated program operations through the ACC function. This is one of two functions provided by the WP/ACC pin. This function is primarily intended to allow faster factory throughput by 50 percent. If the system asserts VHH on this pin, the device automatically enters the after mentioned Fast mode, temporarily unprotects any protected sectors, and uses the higher voltage on the pin to reduce the time required for program operations. The system would use a two-cycle program command sequence as required by the Fast mode. Removing VHH from the WP/ACC pin returns the device to normal operation. If you use this function, please contact a Fujitsu representative for more information. 16 MBM29SL160TD-10/-12/MBM29SL160BD-10/-12 Table 7 MBM29SL160TD/BD Command Definitions Command Sequence Read/Reset Read/Reset Autoselect Program Chip Erase Sector Erase Word Byte Word Byte Word Byte Word Byte Word Byte Word Byte Erase Suspend Erase Resume Set to Fast Mode Word Fast Program *1 Word Reset from Fast Mode *1 Word Extended Sector Group Protection *2 Query *3 Byte Byte Byte Word Byte Word Byte OTP Entry Word OTP Program *4 Word OTP Exit *4 Word Byte Byte Byte Bus Write Cycles Req’d 1 3 3 4 6 6 1 1 3 2 2 4 1 3 4 4 First Bus Second Bus Third Bus Fourth Bus Fifth Bus Sixth Bus Write Cycle Write Cycle Write Cycle Read/Write Write Cycle Write Cycle Cycle Addr. Data Addr. Data Addr. Data Addr. Data Addr. Data Addr. Data XXXH F0H 555H AAAH 555H AAAH 555H AAAH 555H AAAH 555H AAAH XXXH XXXH 555H AAAH XXXH XXXH XXXH XXXH AAH AAH AAH AAH AAH B0H 30H AAH A0H 90H XXXH 60H 55H AAH 555H AAAH 555H AAAH 555H AAAH 98H — 2AAH 555H 2AAH 555H 2AAH 555H 2AAH 555H 2AAH 555H — — 2AAH 555H PA — 55H 55H 55H 55H 55H — — 55H — 555H AAAH 555H AAAH 555H AAAH 555H AAAH 555H AAAH — — 555H AAAH — — — — — — — F0H RA RD — — — — 90H — — — — — — A0H PA PD — — — — 555H 2AAH 555H AAH 55H 10H AAAH 555H AAAH 555H 2AAH 80H AAH 55H SA 30H AAAH 555H — — — — — — — — — — — — — — 80H 20H — — — — — — PD — — — — — — — — XXXH F0H XXXH *5 — — — — — — — — SPA 60H SPA 40H SPA SD — — — — — — — — — — — — — — — — — — — — — — — — — — 2AAH 555H 55H 88H — — 555H AAAH 2AAH 555H AAH 55H A0H PA PD 555H AAAH 2AAH 555H AAH 55H 90H XXXH 00H 555H AAAH AAH 17 MBM29SL160TD-10/-12/MBM29SL160BD-10/-12 Notes: 1. Address bits A11 to A19 = X = “H” or “L” for all address commands except or Program Address (PA), Sector Address (SA). 2. Bus operations are defined in Tables 4 and 5. 3. RA = Address of the memory location to be read PA = Address of the memory location to be programmed Addresses are latched on the falling edge of the write pulse. SA = Address of the sector to be erased. The combination of A19, A18, A17, A16, A15, A14, A13, and A12 will uniquely select any sector. 4. RD = Data read from location RA during read operation. PD = Data to be programmed at location PA. Data is latched on the falling edge of write pulse. 5. SPA = Sector group address to be protected. Set sector group address (SGA) and (A6, A1, A0) = (0, 1, 0). SD = Sector group protection verify data. Output 01H at protected sector group addresses and output 00H at unprotected sector group addresses. 6. OTPA = Address of the OTP area 29SL160TD (Top Boot Type) Word Mode: FFF7FH to FFFFFH Byte Mode: 1FFEFFH to 1FFFFFH 29SL160BD (Bottom Boot Type) Word Mode: 00000H to 00080H Byte Mode: 00000H to 00100H *1: This command is valid while Fast Mode. *2: This command is valid while RESET = VID. *3: The valid addresses are A6 to A0. *4: This command is valid while OTP mode. *5: The data "00H" is also acceptable. 7. The system should generate the following address patterns: Word Mode: 555H or 2AAH to addresses A0 to A10 Byte Mode: AAAH or 555H to addresses A–1 and A0 to A10 8. Both Read/Reset commands are functionally equivalent, resetting the device to the read mode. 18 MBM29SL160TD-10/-12/MBM29SL160BD-10/-12 ■ Command Definitions Device operations are selected by writing specific address and data sequences into the command register. Writing incorrect address and data values or writing them in the improper sequence will reset the devices to the read mode. Table 7 defines the valid register command sequences. Note that the Erase Suspend (B0H) and Erase Resume (30H) commands are valid only while the Sector Erase operation is in progress. Moreover both Read/Reset commands are functionally equivalent, resetting the device to the read mode. Please note that commands are always written at DQ0 to DQ7 and DQ8 to DQ15 bits are ignored. Read/Reset Command In order to return from Autoselect mode or Exceeded Timing Limits (DQ5 = 1) to Read/Reset mode, the Read/ Reset operation is initiated by writing the Read/Reset command sequence into the command register. Microprocessor read cycles retrieve array data from the memory. The devices remain enabled for reads until the command register contents are altered. The devices will automatically power-up in the Read/Reset state. In this case, a command sequence is not required to read data. Standard microprocessor read cycles will retrieve array data. This default value ensures that no spurious alteration of the memory content occurs during the power transition. Refer to the AC Read Characteristics and Waveforms for the specific timing parameters. Autoselect Command Flash memories are intended for use in applications where the local CPU alters memory contents. As such, manufacture and device codes must be accessible while the devices reside in the target system. PROM programmers typically access the signature codes by raising A9 to a high voltage. However, multiplexing high voltage onto the address lines is not generally desired system design practice. The device contains an Autoselect command operation to supplement traditional PROM programming methodology. The operation is initiated by writing the Autoselect command sequence into the command register. Following the command write, a read cycle from address (XX)00H retrieves the manufacture code of 04H. A read cycle from address (XX)01H for ×16((XX)02H for ×8) returns the device code (MBM29SL160TD = E4H and MBM29SL160BD = E7H for ×8 mode; MBM29SL160TD = 22E4H and MBM29SL160BD = 22E7H for ×16 mode), (See Tables 6.1 and 6.2.) All manufacturer and device codes will exhibit odd parity with DQ7 defined as the parity bit. Sector state (protection or unprotection) will be informed by address (XX)02H for ×16 ((XX)04H for ×8). Scanning the sector group addresses (A19, A18, A17, A16, A15, A14, A13, and A12) while (A6, A1, A0) = (0, 1, 0) will produce a logical “1” at device output DQ0 for a protected sector group. The programming verification should be performed by verify sector group protection on the protected sector. (See Tables 4 and 5.) To terminate the operation, it is necessary to write the Read/Reset command sequence into the register, and also to write the Autoselect command during the operation, execute it after writing Read/Reset command sequence. Byte/Word Programming The devices are programmed on a byte-by-byte (or word-by-word) basis. Programming is a four bus cycle operation. There are two “unlock” write cycles. These are followed by the program set-up command and data write cycles. Addresses are latched on the falling edge of CE or WE, whichever happens later and the data is latched on the rising edge of CE or WE, whichever happens first. The rising edge of CE or WE (whichever happens first) begins programming. Upon executing the Embedded Program Algorithm command sequence, the system is not required to provide further controls or timings. The device will automatically provide adequate internally generated program pulses and verify the programmed cell margin. 19 MBM29SL160TD-10/-12/MBM29SL160BD-10/-12 The system can determine the status of the program operation by using DQ7 (Data Polling), DQ6 (Toggle Bit), or RY/BY. The Data Polling and Toggle Bit must be performed at the memory location which is being programmed. The automatic programming operation is completed when the data on DQ7 is equivalent to data written to this bit at which time the devices return to the read mode and addresses are no longer latched. (See Table 13, Hardware Sequence Flags.) Therefore, the devices require that a valid address to the devices be supplied by the system at this particular instance of time. Hence, Data Polling must be performed at the memory location which is being programmed. Any commands written to the chip during this period will be ignored. If hardware reset occurs during the programming operation, it is impossible to guarantee the data are being written. Programming is allowed in any sequence and across sector boundaries. Beware that a data “0” cannot be programmed back to a “1”. Attempting to do so may either hang up the device or result in an apparent success according to the data polling algorithm but a read from Read/Reset mode will show that the data is still “0”. Only erase operations can convert “0”s to “1”s. Figure 21 illustrates the Embedded ProgramTM Algorithm using typical command strings and bus operations. Chip Erase Chip erase is a six bus cycle operation. There are two “unlock” write cycles. These are followed by writing the “set-up” command. Two more “unlock” write cycles are then followed by the chip erase command. Chip erase does not require the user to program the device prior to erase. Upon executing the Embedded Erase Algorithm command sequence the devices will automatically program and verify the entire memory for an all zero data pattern prior to electrical erase (Preprogram function). The system is not required to provide any controls or timings during these operations. The system can determine the status of the erase operation by using DQ7 (Data Polling), DQ6 (Toggle Bit), or RY/BY. The chip erase begins on the rising edge of the last CE or WE, whichever happens first in the command sequence and terminates when the data on DQ7 is “1” (See Write Operation Status section.) at which time the device returns to read the mode. Chip Erase Time; Sector Erase Time × All sectors + Chip Program Time (Preprogramming) Figure 22 illustrates the Embedded EraseTM Algorithm using typical command strings and bus operations. Sector Erase Sector erase is a six bus cycle operation. There are two “unlock” write cycles. These are followed by writing the “set-up” command. Two more “unlock” write cycles are then followed by the Sector Erase command. The sector address (any address location within the desired sector) is latched on the falling edge of CE or WE whichever happens later, while the command (Data = 30H) is latched on the rising edge of CE or WE which happens first. After time-out of 50µs from the rising edge of the last sector erase command, the sector erase operation will begin. Multiple sectors may be erased concurrently by writing the six bus cycle operations on Table 7. This sequence is followed with writes of the Sector Erase command to addresses in other sectors desired to be concurrently erased. The time between writes must be less than 50µs otherwise that command will not be accepted and erasure will start. It is recommended that processor interrupts be disabled during this time to guarantee this condition. The interrupts can be re-enabled after the last Sector Erase command is written. A time-out of 50µs from the rising edge of last CE or WE whichever happens first will initiate the execution of the Sector Erase command(s). If another falling edge of CE or WE, whichever happens first occurs within the 50µs time-out window the timer is reset. (Monitor DQ3 to determine if the sector erase timer window is still open, see section DQ3, Sector Erase Timer.) Any command other than Sector Erase or Erase Suspend during this time-out period will reset the devices to the read mode, ignoring the previous command string. Resetting the devices once execution has begun will corrupt the data in the sector. In that case, restart the erase on those sectors and allow them to 20 MBM29SL160TD-10/-12/MBM29SL160BD-10/-12 complete. (Refer to the Write Operation Status section for Sector Erase Timer operation.) Loading the sector erase buffer may be done in any sequence and with any number of sectors (0 to 38). Sector erase does not require the user to program the devices prior to erase. The devices automatically program all memory locations in the sector(s) to be erased prior to electrical erase (Preprogram function). When erasing a sector or sectors the remaining unselected sectors are not affected. The system is not required to provide any controls or timings during these operations. The system can determine the status of the erase operation by using DQ7 (Data Polling), DQ6 (Toggle Bit), or RY/BY. The sector erase begins after the 50µs time out from the rising edge of CE or WE whichever happens first for the last sector erase command pulse and terminates when the data on DQ7 is “1” (See Write Operation Status section.) at which time the devices return to the read mode. Data polling and Toggle Bit must be performed at an address within any of the sectors being erased. Multiple Sector Erase Time; [Sector Erase Time + Sector Program Time (Preprogramming)] × Number of Sector Erase Figure 22 illustrates the Embedded EraseTM Algorithm using typical command strings and bus operations. Erase Suspend/Resume The Erase Suspend command allows the user to interrupt a Sector Erase operation and then perform data reads from or programs to a sector not being erased. This command is applicable ONLY during the Sector Erase operation which includes the time-out period for sector erase. The Erase Suspend command will be ignored if written during the Chip Erase operation or Embedded Program Algorithm. Writting the Erase Suspend command (B0H) during the Sector Erase time-out results in immediate termination of the time-out period and suspension of the erase operation. Writing the Erase Resume command (30H) resumes the erase operation. The address are DON’T CARES when writing the Erase Suspend or Erase Resume command (30H). When the Erase Suspend command is written during the Sector Erase operation, the device will take a maximum of 20µs to suspend the erase operation. When the devices have entered the erase-suspended mode, the RY/BY output pin will be at Hi-Z and the DQ7 bit will be at logic “1”, and DQ6 will stop toggling. The user must use the address of the erasing sector for reading DQ6 and DQ7 to determine if the erase operation has been suspended. Further writes of the Erase Suspend command are ignored. When the erase operation has been suspended, the devices default to the erase-suspend-read mode. Reading data in this mode is the same as reading from the standard read mode except that the data must be read from sectors that have not been erase-suspended. Successively reading from the erase-suspended sector while the device is in the erase-suspend-read mode will cause DQ2 to toggle. (See the section on DQ2.) After entering the erase-suspend-read mode, the user can program the device by writing the appropriate command sequence for Program. This program mode is known as the erase-suspend-program mode. Again, programming in this mode is the same as programming in the regular Program mode except that the data must be programmed to sectors that are not erase-suspended. Successively reading from the erase-suspended sector while the devices are in the erase-suspend-program mode will cause DQ2 to toggle. The end of the erasesuspended Program operation is detected by the RY/BY output pin, Data polling of DQ7 or by the Toggle Bit I (DQ6) which is the same as the regular Program operation. Note that DQ7 must be read from the Program address while DQ6 can be read from any address. To resume the operation of Sector Erase, the Resume command (30H) should be written. Any further writes of the Resume command at this point will be ignored. Another Erase Suspend command can be written after the chip has resumed erasing. 21 MBM29SL160TD-10/-12/MBM29SL160BD-10/-12 Extended Command (1) Fast Mode MBM29SL160TD/BD has Fast Mode function. This mode dispenses with the initial two unclock cycles required in the standard program command sequence by writing Fast Mode command into the command register. In this mode, the required bus cycle for programming is two cycles instead of four bus cycles in standard program command. (Do not write erase command in this mode.) The read operation is also executed after exiting this mode. To exit this mode, it is necessary to write Fast Mode Reset command into the command register. (Refer to the Figure 27.) The VCC active current is required even CE = VIH during Fast Mode. (2) Fast Programming During Fast Mode, the programming can be executed with two bus cycles operation. The Embedded Program Algorithm is executed by writing program set-up command (A0H) and data write cycles (PA/PD). (Refer to the Figure 27.) (3) Extended Sector Group Protection In addition to normal sector group protection, the MBM29SL160TD/BD has Extended Sector Group Protection as extended function. This function enable to protect sector group by forcing VID on RESET pin and write a command sequence. Unlike conventional procedure, it is not necessary to force VID and control timing for control pins. The only RESET pin requires VID for sector group protection in this mode. The extended sector group protection requires VID on RESET pin. With this condition, the operation is initiated by writing the set-up command (60H) into the command register. Then, the sector group addresses pins (A19, A18, A17, A16, A15, A14, A13 and A12) and (A6, A1, A0) = (0, 1, 0) should be set to the sector group to be protected (recommend to set VIL for the other addresses pins), and write extended sector group protection command (60H). A sector group is typically protected in 150 µs. To verify programming of the protection circuitry, the sector group addresses pins (A19, A18, A17, A16, A15, A14, A13 and A12) and (A6, A1, A0) = (0, 1, 0) should be set and write a command (40H). Following the command write, a logical “1” at device output DQ0 will produce for protected sector in the read operation. If the output data is logical “0”, please repeat to write extended sector group protection command (60H) again. To terminate the operation, it is necessary to set RESET pin to VIH. (Refer to the Figures 19 and 28.) (4) CFI (Common Flash Memory Interface) The CFI (Common Flash Memory Interface) specification outlines device and host system software interrogation handshake which allows specific vendor-specified software algorithms to be used for entire families of devices. This allows device-independent, JEDEC ID-independent, and forward-and backwardcompatible software support for the specified flash device families. Refer to CFI specification in detail. The operation is initiated by writing the query command (98H) into the command register. Following the command write, a read cycle from specific address retrives device information. Please note that output data of upper byte (DQ8 to DQ15) is “0” in word mode (16 bit) read. Refer to the CFI code table. To terminate operation, it is necessary to write the read/reset command sequence into the register. (See Table 15.) 22 MBM29SL160TD-10/-12/MBM29SL160BD-10/-12 One Time Protect (OTP) Region The OTP feature provides a Flash memory region that the system may access through a new command sequence. This is primarily intended for customers who wish to use an Electronic Serial Number (ESN) in the device with the ESN protected against modification. Once the OTP region is protected, any further modification of that region is impossible. This ensures the security of the ESN once the product is shipped to the field. The OTP region is 256 bytes in length. The MBM29SL160TD occupies the address of the byte mode 1FFEFFH to 1FFFFFH (word mode FFF7FH to FFFFFH) and the MBM29SL160BD type occupies the address of the byte mode 00000H to 00100H (word mode 00000H to 00080H). After the system has written the Enter OTP command sequence, the system may read the OTP region by using the addresses normally occupied by the boot sectors. That is, the device sends all commands that would normally be sent to the boot sectors to the OTP region. This mode of operation continues until the system issues the Exit OTP command sequence, or until power is removed from the device. On power-up, or following a hardware reset, the device reverts to sending commands to the boot sectors. If you request Fujitsu to program the ESN in the device, please contact a Fujitsu representative for more information. Write Operarion Status Table 8 Hardware Sequence Flags DQ7 DQ6 DQ5 DQ3 DQ2 DQ7 Toggle 0 0 1 0 Toggle 0 1 Toggle (Note 2) 1 1 0 0 Toggle Data Data DQ7 Toggle (Note 1) 0 0 1 (Note 2) Embedded Program Algorithm DQ7 Toggle 1 0 1 Embedded Erase Algorithm Exceeded Time Limits Erase Erase Suspend Program Suspended (Non-Erase Suspended Sector) Mode 0 Toggle 1 1 N/A DQ7 Toggle 1 0 N/A Status Embedded Program Algorithm Embedded Erase Algorithm In Progress Erase Suspend Read (Erase Suspended Sector) Erase Erase Suspend Read Suspended (Non-Erase Suspended Sector) Mode Erase Suspend Program (Non-Erase Suspended Sector) Data Data Data Notes: 1. Performing successive read operetions from any address will cause DQ6 to toggle. 2. Reading the byte address being programmed while in the erase-suspend program mode will indicate logic "1" at the DQ2 bit. However, successive reads from the erase-suspend sector will cause DQ2 to toggle. 3. DQ0 and DQ1 are reserve pins for future use. 4. DQ4 is Fujitsu internal use only 23 MBM29SL160TD-10/-12/MBM29SL160BD-10/-12 DQ7 Data Polling The MBM29SL160TD/BD devices feature Data Polling as a method to indicate to the host that the Embedded Algorithms are in progress or completed. During the Embedded Program Algorithm an attempt to read the devices will produce the complement of the data last written to DQ7. Upon completion of the Embedded Program Algorithm, an attempt to read the device will produce the true data last written to DQ7. During the Embedded Erase Algorithm, an attempt to read the device will produce a “0” at the DQ7 output. Upon completion of the Embedded Erase Algorithm an attempt to read the device will produce a “1” at the DQ7 output. The flowchart for Data Polling (DQ7) is shown in Figure 23. For programming, the Data Polling is valid after the rising edge of fourth write pulse in the four write pulse sequence. For chip erase and sector erase, the Data Polling is valid after the rising edge of the sixth write pulse in the six write pulse sequence. Data Polling must be performed at sector address within any of the sectors being erased and not a protected sector. Otherwise, the status may not be valid. Once the Embedded Algorithm operation is close to being completed, the MBM29SL160TD/BD data pins (DQ7) may change asynchronously while the output enable (OE) is asserted low. This means that the devices are driving status information on DQ7 at one instant of time and then that byte’s valid data at the next instant of time. Depending on when the system samples the DQ7 output, it may read the status or valid data. Even if the device has completed the Embedded Algorithm operation and DQ7 has a valid data, the data outputs on DQ0 to DQ6 may be still invalid. The valid data on DQ0 to DQ7 will be read on the successive read attempts. The Data Polling feature is only active during the Embedded Programming Algorithm, Embedded Erase Algorithm or sector erase time-out. (See Table 8.) See Figure 9 for the Data Polling timing specifications and diagrams. DQ6 Toggle Bit I The MBM29SL160TD/BD also feature the “Toggle Bit I” as a method to indicate to the host system that the Embedded Algorithms are in progress or completed. During an Embedded Program or Erase Algorithm cycle, successive attempts to read (OE toggling) data from the devices will result in DQ6 toggling between one and zero. Once the Embedded Program or Erase Algorithm cycle is completed, DQ6 will stop toggling and valid data will be read on the next successive attempts. During programming, the Toggle Bit I is valid after the rising edge of the fourth write pulse in the four write pulse sequence. For chip erase and sector erase, the Toggle Bit I is valid after the rising edge of the sixth write pulse in the six write pulse sequence. The Toggle Bit I is active during the sector time out. In programming, if the sector being written to is protected, the toggle bit will toggle for about 1 µs and then stop toggling without the data having changed. In erase, the devices will erase all the selected sectors except for the ones that are protected. If all selected sectors are protected, the chip will toggle the toggle bit for about 400 µs and then drop back into read mode, having changed none of the data. Either CE or OE toggling will cause the DQ6 to toggle. In addition, an Erase Suspend/Resume command will cause the DQ6 to toggle. See Figure 10 for the Toggle Bit I timing specifications and diagrams. 24 MBM29SL160TD-10/-12/MBM29SL160BD-10/-12 DQ5 Exceeded Timing Limits DQ5 will indicate if the program or erase time has exceeded the specified limits (internal pulse count). Under these conditions DQ5 will produce a “1”. This is a failure condition which indicates that the program or erase cycle was not successfully completed. Data Polling is the only operating function of the devices under this condition. The CE circuit will partially power down the device under these conditions (to approximately 2 mA). The OE and WE pins will control the output disable functions as described in Tables 4 and 5. The DQ5 failure condition may also appear if a user tries to program a non blank location without erasing. In this case the devices lock out and never complete the Embedded Algorithm operation. Hence, the system never reads a valid data on DQ7 bit and DQ6 never stops toggling. Once the devices have exceeded timing limits, the DQ5 bit will indicate a “1.” Please note that this is not a device failure condition since the devices were incorrectly used. If this occurs, reset the device with command sequence. DQ3 Sector Erase Timer After the completion of the initial sector erase command sequence the sector erase time-out will begin. DQ3 will remain low until the time-out is complete. Data Polling and Toggle Bit are valid after the initial sector erase command sequence. If Data Polling or the Toggle Bit I indicates the device has been written with a valid erase command, DQ3 may be used to determine if the sector erase timer window is still open. If DQ3 is high (“1”) the internally controlled erase cycle has begun; attempts to write subsequent commands to the device will be ignored until the erase operation is completed as indicated by Data Polling or Toggle Bit I. If DQ3 is low (“0”), the device will accept additional sector erase commands. To insure the command has been accepted, the system software should check the status of DQ3 prior to and following each subsequent Sector Erase command. If DQ3 were high on the second status check, the command may not have been accepted. See Table 8: Hardware Sequence Flags. DQ2 Toggle Bit II This toggle bit II, along with DQ6, can be used to determine whether the devices are in the Embedded Erase Algorithm or in Erase Suspend. Successive reads from the erasing sector will cause DQ2 to toggle during the Embedded Erase Algorithm. If the devices are in the erase-suspended-read mode, successive reads from the erase-suspended sector will cause DQ2 to toggle. When the devices are in the erase-suspended-program mode, successive reads from the byte address of the non-erase suspended sector will indicate a logic “1” at the DQ2 bit. DQ6 is different from DQ2 in that DQ6 toggles only when the standard program or Erase, or Erase Suspend Program operation is in progress. The behavior of these two status bits, along with that of DQ7, is summarized as follows: For example, DQ2 and DQ6 can be used together to determine if the erase-suspend-read mode is in progress. (DQ2 toggles while DQ6 does not.) See also Table 9 and Figure 18. Furthermore, DQ2 can also be used to determine which sector is being erased. When the device is in the erase mode, DQ2 toggles if this bit is read from an erasing sector. 25 MBM29SL160TD-10/-12/MBM29SL160BD-10/-12 Table 9 Toggle Bit Status DQ7 DQ6 DQ2 DQ7 Toggle 1 Erase 0 Toggle Toggle Erase-Suspend Read (Erase-Suspended Sector) 1 1 Toggle DQ7 Toggle (Note 1) 1 (Note 2) Mode Program Erase-Suspend Program Note: 1.Performing successive read operetions from any address will cause DQ6 to toggle. 2.Reading the byte address being programmed while in the erase-suspend program mode will indicate logic "1" at the DQ2 bit. However, successive reads from the erase-suspend sector will cause DQ2 to toggle. RY/BY Ready/Busy The MBM29SL160TD/BD provide a RY/BY open-drain output pin as a way to indicate to the host system that the Embedded Algorithms are either in progress or has been completed. If the output is low, the devices are busy with either a program or erase operation. If the output is high, the devices are ready to accept any read/ write or erase operation. When the RY/BY pin is low, the devices will not accept any additional program or erase commands. If the MBM29SL160TD/BD are placed in an Erase Suspend mode, the RY/BY output will be high. During programming, the RY/BY pin is driven low after the rising edge of the fourth write pulse. During an erase operation, the RY/BY pin is driven low after the rising edge of the sixth write pulse. The RY/BY pin will indicate a busy condition during the RESET pulse. Refer to Figures 11 and 12 for a detailed timing diagram. The RY/BY pin is pulled high in standby mode. Since this is an open-drain output, RY/BY pins can be tied together in parallel with a pull-up resistor to VCC. Byte/Word Configuration The BYTE pin selects the byte (8-bit) mode or word (16-bit) mode for the MBM29SL160TD/BD devices. When this pin is driven high, the devices operate in the word (16-bit) mode. The data is read and programmed at DQ0 to DQ15. When this pin is driven low, the devices operate in byte (8-bit) mode. Under this mode, the DQ15/A-1 pin becomes the lowest address bit and DQ8 to DQ14 bits are tri-stated. However, the command bus cycle is always an 8-bit operation and hence commands are written at DQ0 to DQ7 and the DQ8 to DQ15 bits are ignored. Refer to Figures 13, 14 and 15 for the timing diagram. Data Protection The MBM29SL160TD/BD are designed to offer protection against accidental erasure or programming caused by spurious system level signals that may exist during power transitions. During power up the devices automatically reset the internal state machine in the Read mode. Also, with its control register architecture, alteration of the memory contents only occurs after successful completion of specific multi-bus cycle command sequences. The devices also incorporate several features to prevent inadvertent write cycles resulting form VCC power-up and power-down transitions or system noise. If Embedded Erase Algorithm is interrupted, there is possibility that the erasing sector(s) cannot be used. 26 MBM29SL160TD-10/-12/MBM29SL160BD-10/-12 Write Pulse “Glitch” Protection Noise pulses of less than 5 ns (typical) on OE, CE, or WE will not initiate a write cycle. Logical Inhibit Writing is inhibited by holding any one of OE = VIL, CE = VIH, or WE = VIH. To initiate a write cycle CE and WE must be a logical zero while OE is a logical one. Power-Up Write Inhibit Power-up of the devices with WE = CE = VIL and OE = VIH will not accept commands on the rising edge of WE. The internal state machine is automatically reset to the read mode on power-up. 27 MBM29SL160TD-10/-12/MBM29SL160BD-10/-12 Table 10 Common Flash Memory Interface Code Description Query-unique ASCII string “QRY” Primary OEM Command Set 2h: AMD/FJ standard type Address for Primary Extended Table Alternate OEM Command Set (00h = not applicable) Address for Alternate OEM Extended Table VCC Min. (write/erase) D7-4: volt, D3-0: 100 mvolt VCC Max. (write/erase) D7-4: volt, D3-0: 100 mvolt VPP Min. voltage VPP Max. voltage Typical timeout per single byte/word write 2N µs Typical timeout for Min. size buffer write 2N µs Typical timeout per individual block erase 2N ms Typical timeout for full chip erase 2N ms Max. timeout for byte/word write 2N times typical Max. timeout for buffer write 2N times typical Max. timeout per individual block erase 2N times typical Max. timeout for full chip erase 2N times typical Device Size = 2N byte Flash Device Interface description Max. number of byte in multi-byte write = 2N Number of Erase Block Regions within device Erase Block Region 1 Information 28 A0 to A6 10h 11h 12h 13h 14h 15h 16h 17h 18h 19h 1Ah 1Bh DQ0 to DQ15 1Ch 0027h 1Dh 1Eh 1Fh 0000h 0000h 0004h 20h 0000h 21h 000Ah 22h 0000h 23h 0005h 24h 0000h 0051h 0052h 0059h 0002h 0000h 0040h 0000h 0000h 0000h 0000h 0000h 0018h 25h 0004h 26h 0000h 27h 28h 29h 2Ah 2Bh 2Ch 0015h 0002h 0000h 0000h 0000h 0002h 2Dh 2Eh 2Fh 30h 0007h 0000h 0020h 0000h Description Erase Block Region 2 Information29SL160 Query-unique ASCII string “PRI” Major version number, ASCII Minor version number, ASCII Address Sensitive Unlock 0 = Required 1 = Not Required Erase Suspend 0 = Not Supported 1 = To Read Only 2 = To Read & Write Sector Protection 0 = Not Supported X = Number of sectors in per group Sector Temporary Unprotection 00 = Not Supported 01 = Supported Sector Protection Algorithm Number of Sector for Bank 2 00h = Not Supported Burst Mode Type 00 = Not Supported Page Mode Type 00 = Not Supported ACC (Acceleration) Supply Minimum 00h = Not Supported, D7-4: volt, D3-0: 100 mvolt ACC (Acceleration) Supply Maximum 00h = Not Supported, D7-4: volt, D3-0: 100 mvolt Boot Type 02h = MBM29SL160BD 03h = MBM29SL160TD A0 to A6 31h 32h 33h 34h 40h 41h 42h 43h 44h 45h DQ0 to DQ15 46h 0002h 47h 0001h 48h 0001h 49h 4Ah 0004h 0000h 4Bh 0000h 4Ch 0000h 4Dh 0085h 4Eh 0095h 4Fh 00XXh 001Eh 0000h 0000h 0001h 0050h 0052h 0049h 0031h 0031h 0000h MBM29SL160TD-10/-12/MBM29SL160BD-10/-12 ■ ABSOLUTE MAXIMUM RATINGS Parameter Symbol Conditions Tstg Rating Unit Min. Max. — –55 +125 °C TA — –40 +85 °C Voltage with respect to Ground All pins except A9, OE, RESET (Note 1) VIN, VOUT — –0.5 VCC + 0.5 V Power Supply Voltage (Note 1) VCC — –0.5 +3.0 V A9, OE, and RESET (Note 2) VIN — –0.5 +11.0 V WP/ACC VIN — –0.5 +10.5 V Storage Temperature Ambient Temperature with Power Applied Notes: 1. Minimum DC voltage on input or I/O pins are –0.5 V. During voltage transitions, inputs may negative overshoot VSS to –2.0 V for periods of up to 20 ns. Maximum DC voltage on output and I/O pins are VCC +0.5 V. During voltage transitions, outputs may positive overshoot to VCC +2.0 V for periods of up to 20 ns. 2. Minimum DC input voltage on A9, OE and RESET pins are –0.5 V. During voltage transitions, A9, OE and RESET pins may negative overshoot VSS to –2.0 V for periods of up to 20 ns. Maximum DC input voltage on A9, OE and RESET pins are +11.0 V which may positive overshoot to 12.0 V for periods of up to 20 ns. Voltage difference between input voltage and supply voltage (VIN – VCC) do not exceed 9 V. WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current, temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings. ■ RECOMMENDED OPERATING CONDITIONS Parameter Symbol Conditions Ambient Temperature TA Power Supply Voltage VCC Value Unit Min. Max. — –40 +85 °C — +1.8 +2.2 V Operating ranges define those limits between which the functionality of the devices are guaranteed. WARNING: The recommended operating conditions are required in order to ensure the normal operation of the semiconductor device. All of the device’s electrical characteristics are warranted when the device is operated within these ranges. Always use semiconductor devices within their recommended operating condition ranges. Operation outside these ranges may adversely affect reliability and could result in device failure. No warranty is made with respect to uses, operating conditions, or combinations not represented on the data sheet. Users considering application outside the listed conditions are advised to contact their FUJITSU representatives beforehand. 29 MBM29SL160TD-10/-12/MBM29SL160BD-10/-12 ■ MAXIMUM OVERSHOOT 20 ns 20 ns 0.2 × V CC –0.5 V –2.0 V 20 ns Figure 1 Maximum Negative Overshoot Waveform 20 ns V CC +2.0 V V CC +0.5 V 0.8 × V CC 20 ns Figure 2 20 ns Maximum Positive Overshoot Waveform 1 20 ns +12.0 V +11.0 V V CC +0.5 V 20 ns 20 ns *: This waveform is applied for A9, OE, and RESET. Figure 3 30 Maximum Positive Overshoot Waveform 2 MBM29SL160TD-10/-12/MBM29SL160BD-10/-12 ■ DC CHARACTERISTICS Parameter Symbol Parameter Description Test Conditions Min. Max. Unit ILI Input Leakage Current VIN = VSS to VCC, VCC = VCC Max. –1.0 +1.0 µA ILO Output Leakage Current VOUT = VSS to VCC, VCC = VCC Max. –1.0 +1.0 µA ILIT A9, OE, RESET Inputs Leakage Current VCC = VCC Max. A9, OE, RESET = 11 V — 35 µA ILIA WP/ACC Inputs Leakage Current VCC = VCC Max. WP/ACC = VHH Max. — 20 mA CE = VIL, OE = VIH, f=10 MHz ICC1 Byte 25 — Word mA 25 VCC Active Current (Note 1) CE = VIL, OE = VIH, f=5 MHz Byte 15 — Word mA 15 ICC2 VCC Active Current (Note 2) CE = VIL, OE = VIH — 25 mA ICC3 VCC Current (Standby) VCC = VCC Max., CE = VCC ± 0.3 V, RESET = VCC ± 0.3 V — 5 µA ICC4 VCC Current (Standby, Reset) VCC = VCC Max., RESET = VSS ± 0.3 V — 5 µA ICC5 VCC = VCC Max., CE = VSS ± 0.3 V, VCC Current RESET = VCC ± 0.3 V (Automatic Sleep Mode) (Note 3) VIN = VCC ± 0.3 V or VSS ± 0.3 V — 5 µA VIL Input Low Level — –0.5 0.2 x VCC V VIH Input High Level — 0.8 x VCC VCC+0.3 V VACC Voltage for WP/ACC Sector Protection/Unprotection and Program Accelaration — 8.5 9.5 V VID Voltage for Autoselect and Sector Protection (A9, OE, RESET) (Note 4, 5) — 10 11 V VOL Output Low Voltage Level IOL = 0.1 mA, VCC = VCC Min. — 0.1 V VOH Output High Voltage Level IOH = –100 µA VCC–0.1 — V Notes: 1. 2. 3. 4. 5. The ICC current listed includes both the DC operating current and the frequency dependent component. ICC active while Embedded Algorithm (program or erase) is in progress. Automatic sleep mode enables the low power mode when address remain stable for 150 ns. This timing is for Sector Protection operation. Applicable for only VCC applying. 31 MBM29SL160TD-10/-12/MBM29SL160BD-10/-12 ■ AC CHARACTERISTICS • Read Only Operations Characteristics Parameter Symbols Description -10 (Note) -12 (Note) Unit Min. 100 120 ns Test Setup JEDEC Standard tAVAV tRC Read Cycle Time tAVQV tACC Address to Output Delay CE = VIL Max. OE = VIL 100 120 ns tELQV tCE Chip Enable to Output Delay OE = VIL Max. 100 120 ns tGLQV tOE Output Enable to Output Delay — Max. 35 50 ns tEHQZ tDF Chip Enable to Output High-Z — Max. 30 40 ns tGHQZ tDF Output Enable to Output High-Z — Max. 30 40 ns tAXQX tOH Output Hold Time From Addresses, CE or OE, Whichever Occurs First — Min. 0 0 ns — tREADY RESET Pin Low to Read Mode — Max. 20 20 µs — tELFL tELFH CE or BYTE Switching Low or High — Max. 5 5 ns — Notes: Test Conditions: Output Load:1 TTL gate and 30 pF (MBM29SL160TD/BD-10) 1 TTL gate and 100 pF (MBM29SL160TD/BD-12) Input rise and fall times: 5 ns Input pulse levels: 0.0 V to VCC Timing measurement reference level Input: 0.5 x VCC Output: 0.5 x VCC VCC IN3064 or Equivalent 2.7 kΩ Device Under Test 6.2 kΩ CL Diodes = IN3064 or Equivalent Notes: CL = 30 pF including jig capacitance (MBM29SL160TD/BD-10) CL = 100 pF including jig capacitance (MBM29SL160TD/BD-12) Figure 4 32 Test Conditions MBM29SL160TD-10/-12/MBM29SL160BD-10/-12 • Write/Erase/Program Operations Parameter Symbols Description -10 -12 Unit Min. 100 120 ns Address Setup Time Min. 0 0 ns tAH Address Hold Time Min. 50 60 ns tDVWH tDS Data Setup Time Min. 50 60 ns tWHDX tDH Data Hold Time Min. 0 0 ns — tOES Output Enable Setup Time Min. 0 0 ns Min. 0 0 ns tOEH Output Enable Hold Time Read — Toggle and Data Polling Min. 10 10 ns JEDEC Standard tAVAV tWC Write Cycle Time tAVWL tAS tWLAX tGHWL tGHWL Read Recover Time Before Write Min. 0 0 ns tGHEL tGHEL Read Recover Time Before Write Min. 0 0 ns tELWL tCS CE Setup Time Min. 0 0 ns tWLEL tWS WE Setup Time Min. 0 0 ns tWHEH tCH CE Hold Time Min. 0 0 ns tEHWH tWH WE Hold Time Min. 0 0 ns tWLWH tWP Write Pulse Width Min. 50 60 ns tELEH tCP CE Pulse Width Min. 50 60 ns tWHWL tWPH Write Pulse Width High Min. 30 30 ns tEHEL tCPH CE Pulse Width High Min. 30 30 ns tWHWH1 tWHWH1 Byte Programming Operation Typ. 10.6 10.6 µs tWHWH2 tWHWH2 Sector Erase Operation (Note 1) Typ. 1.5 1.5 sec — tVCS VCC Setup Time Min. 50 50 µs — tVIDR Rise Time to VID (Note 2) Min. 500 500 ns — tVACCR Rise Time to VACC Min. 500 500 ns — tVLHT Voltage Transition Time (Note 2) Min. 4 4 µs — tWPP Write Pulse Width (Note 2) Min. 100 100 µs — tOESP OE Setup Time to WE Active (Note 2) Min. 4 4 µs — tCSP CE Setup Time to WE Active (Note 2) Min. 4 4 µs — tRB Recover Time From RY/BY Min. 0 0 ns — tRP RESET Pulse Width Min. 500 500 ns — tRH RESET Hold Time Before Read Min. 200 200 ns (Continued) 33 MBM29SL160TD-10/-12/MBM29SL160BD-10/-12 (Continued) Parameter Symbols Description -10 -12 Unit Max. 30 40 ns BYTE Switching High to Output Active Min. 30 40 ns tBUSY Program/Erase Valid to RY/BY Delay Max. 90 90 ns — tEOE Delay Time from Embedded Output Enable Max. 100 120 ns — tPS Power On/Off Timing Min. 0 0 ns JEDEC Standard — tFLQZ BYTE Switching Low to Output High-Z — tFHQV — Notes: 1. This does not include the preprogramming time. 2. This timing is for Sector Group Protection operation. 34 MBM29SL160TD-10/-12/MBM29SL160BD-10/-12 ■ SWITCHING WAVEFORMS • Key to Switching Waveforms WAVEFORM INPUTS OUTPUTS Must Be Steady Will Be Steady May Change from H to L Will Be Changing from H to L May Change from L to H Will Be Changing from L to H “H” or “L” Any Change Permitted Changing State Unknown Does Not Apply Center Line is HighImpedance “Off” State t RC Addresses Addresses Stable t ACC CE t OE t DF OE t OEH WE t CE Outputs High-Z Figure 5.1 Output Valid High-Z AC Waveforms for Read Operations 35 MBM29SL160TD-10/-12/MBM29SL160BD-10/-12 t RC Addresses Addresses Stable t ACC t RH RESET t OH High-Z Outputs Figure 5.2 36 Output Valid AC Waveforms for Hardware Reset/Read Operations MBM29SL160TD-10/-12/MBM29SL160BD-10/-12 Data Polling 3rd Bus Cycle Addresses 555H t WC PA t AS PA t RC t AH CE t CH t CS t CE OE t GHWL t WP t WPH t OE t WHWH1 WE t OH t DS t DH A0H Data Notes: 1. 2. 3. 4. 5. 6. PD DQ 7 D OUT D OUT PA is address of the memory location to be programmed. PD is data to be programmed at byte address. DQ7 is the output of the complement of the data written to the device. DOUT is the output of the data written to the device. Figure indicates last two bus cycles out of four bus cycle sequence. These waveforms are for the ×16 mode. (The addresses differ from ×8 mode.) Figure 6 AC Waveforms for Alternate WE Controlled Program Operations 37 MBM29SL160TD-10/-12/MBM29SL160BD-10/-12 3rd Bus Cycle Addresses Data Polling PA 555H t WC t AS PA t AH WE t WS t WH OE t GHEL t CP t CPH t WHWH1 CE t DS t DH Data Notes: 1. 2. 3. 4. 5. 6. PD DQ 7 D OUT PA is address of the memory location to be programmed. PD is data to be programmed at byte address. DQ7 is the output of the complement of the data written to the device. DOUT is the output of the data written to the device. Figure indicates last two bus cycles out of four bus cycle sequence. These waveforms are for the ×16 mode. (The addresses differ from ×8 mode.) Figure 7 38 A0H AC Waveforms for Alternate CE Controlled Program Operations MBM29SL160TD-10/-12/MBM29SL160BD-10/-12 Addresses 2AAH 555H t WC t AS 555H 555H 2AAH SA t AH CE t CS t CH OE t GHWL t WP t WPH WE t DS AAH Data t DH 55H 80H AAH 55H 10H/ 30H t VCS V CC Notes: 1. SA is the sector address for Sector Erase. Addresses = 555H (Word), AAAH (Byte) for Chip Erase. 2. These waveforms are for the ×16 mode. (The addresses differ from ×8 mode.) Figure 8 AC Waveforms Chip/Sector Erase Operations 39 MBM29SL160TD-10/-12/MBM29SL160BD-10/-12 CE t CH t OE t DF OE t OEH WE t CE * DQ7 Data High-Z DQ7 = Valid Data DQ7 t WHWH1 or 2 DQ0 to DQ6 Data DQ0 to DQ6 = Output Flag High-Z DQ0 to DQ6 Valid Data t EOE * : DQ7 = Valid Data (The device has completed the Embedded operation). Figure 9 AC Waveforms for Data Polling during Embedded Algorithm Operations CE tOEH WE tOES OE * DQ 6 Data DQ 6 = Toggle DQ 6 = Stop Toggling DQ 6 = Toggle Valid tOE * : DQ6 stops toggling (The device has completed the Embedded operation). Figure 10 40 AC Waveforms for Toggle Bit I during Embedded Algorithm Operations MBM29SL160TD-10/-12/MBM29SL160BD-10/-12 CE The rising edge of the last WE signal WE Entire programming or erase operations RY/BY t BUSY Figure 11 RY/BY Timing Diagram during Program/Erase Operations WE RESET tRP t RB RY/BY tREADY Figure 12 RESET/RY/BY Timing Diagram 41 MBM29SL160TD-10/-12/MBM29SL160BD-10/-12 CE BYTE Data Output (DQ0 to DQ7) DQ0 to DQ14 tELFH DQ15/A-1 Data Output (DQ0 to DQ14) tFHQV DQ15 A-1 Figure 13 Timing Diagram for Word Mode Configuration CE BYTE DQ0 to DQ14 tELFL DQ15/A-1 Data Output (DQ0 to DQ7) Data Output (DQ0 to DQ14) DQ15 A-1 tFLQZ Figure 14 Timing Diagram for Byte Mode Configuration The falling edge of the last write signal CE or WE Input Valid BYTE tSET (tAS) Figure 15 42 tHOLD (tAH) BYTE Timing Diagram for Write Operations MBM29SL160TD-10/-12/MBM29SL160BD-10/-12 A18, A17, A16 A15, A14 A13, A12 SAX SAY A0 A1 A6 VID VIH A9 t VLHT VID VIH OE t VLHT t VLHT t VLHT t WPP WE t OESP t CSP CE Data 01H t VCS t OE VCC SGAX:Sector Group Address for initial sector SGAY:Sector Group Address for next sector Note: A-1 is VIL on byte mode. Figure 16 AC Waveforms for Sector Group Protection Timing Diagram 43 MBM29SL160TD-10/-12/MBM29SL160BD-10/-12 VCC tVIDR tVCS VID VIH RESET CE WE tVLHT tVLHT Program or Erase Command Sequence RY/BY Figure 17 Enter Embedded Erasing WE Temporary Sector Group Unprotection Timing Diagram Erase Suspend Erase Enter Erase Suspend Program Erase Suspend Read Erase Suspend Program Erase Resume Erase Suspend Read DQ6 DQ2 Toggle DQ2 and DQ6 with OE Note: DQ2 is read from the erase-suspended sector. Figure 18 44 DQ2 vs. DQ6 Erase Erase Complete MBM29SL160TD-10/-12/MBM29SL160BD-10/-12 VCC tVCS RESET tVLHT tVIDR Add SGAX SGAX SGAY A0 A1 A6 CE OE TIME-OUT tWP WE Data 60H 60H 40H 01H 60H SGAX : Sector Group Address to be protected SGAY : Next Sector Group Address to be protected TIME-OUT : Time-Out window = 50 µs (min) Figure 19 Extended Sector Group Protection Timing Diagram 45 MBM29SL160TD-10/-12/MBM29SL160BD-10/-12 t PS t PS RESET VCC 0V VIH 1.8 V Input Valid Addresses Data Output Valid t RH Figure 20 46 t ACC Power ON/OFF Timing Diagram MBM29SL160TD-10/-12/MBM29SL160BD-10/-12 VCC tVACCR tVCS tVLHT VACC 3V VIH WP/ACC CE WE tVLHT tVLHT Program Command Sequence RY/BY Accelerated Program Figure 21 Accelerated Program Operation Timing Diagram 47 MBM29SL160TD-10/-12/MBM29SL160BD-10/-12 EMBEDDED ALGORITHMS Start Write Program Command Sequence (See below) Data Polling Device No Increment Address Last Address ? Yes Programming Completed Program Command Sequence* (Address/Command): 555H/AAH 2AAH/55H 555H/A0H Program Address/Program Data * : The sequence is applied for × 16 mode. The addresses differ from × 8 mode. Figure 22 48 Embedded ProgramTM Algorithm MBM29SL160TD-10/-12/MBM29SL160BD-10/-12 EMBEDDED ALGORITHMS Start Write Erase Command Sequence (See below) Data Polling or Toggle Bit Successfully Completed Erasure Completed Chip Erase Command Sequence* (Address/Command): Individual Sector/Multiple Sector* Erase Command Sequence (Address/Command): 555H/AAH 555H/AAH 2AAH/55H 2AAH/55H 555H/80H 555H/80H 555H/AAH 555H/AAH 2AAH/55H 2AAH/55H 555H/10H Sector Address/30H Sector Address/30H Additional sector erase commands are optional. Sector Address/30H * : The sequence is applied for × 16 mode. The addresses differ from × 8 mode. Figure 23 Embedded EraseTM Algorithm 49 MBM29SL160TD-10/-12/MBM29SL160BD-10/-12 Start Read (DQ 0 to DQ 7) Addr. = VA DQ 7 = Data? VA = Byte address for programming = Any of the sector addresses within the sector being erased during sector erase or multiple sector erases operation = Any of the sector addresses within the sector not being protected during chip erase Yes No No DQ 5 = 1? Yes Read (DQ 0 to DQ 7) Addr. = VA DQ 7 = Data? Yes No Fail Pass Note: DQ7 is rechecked even if DQ5 = “1” because DQ7 may change simultaneously with DQ5. Figure 24 50 Data Polling Algorithm MBM29SL160TD-10/-12/MBM29SL160BD-10/-12 Start Read (DQ 0 to DQ 7) Addr. = "H" or "L" DQ 6 = Toggle ? No Yes No DQ 5 = 1? Yes Read (DQ 0 to DQ 7) Addr. = VA DQ 6 = Toggle ? No Yes Fail Pass Note: DQ6 is rechecked even if DQ5 = “1” because DQ6 may stop toggling at the same time as DQ5 changing to “1” . Figure 25 Toggle Bit Algorithm 51 MBM29SL160TD-10/-12/MBM29SL160BD-10/-12 Start Setup Sector Addr. (A18, A17, A16, A15, A14, A13, A12) PLSCNT = 1 OE = V ID, A 9 = V ID, A 6 = CE = V IL, RESET = V IH A 0 = V IL, A 1 = V IH Activate WE Pulse Time out 100 µs Increment PLSCNT WE = V IH, CE = OE = V IL (A 9 should remain V ID) Read from Sector (Addr. = SA, A 0 = V IL, A 1 = V IH, A 6 = V IL)* No No PLSCNT = 25? Yes Remove V ID from A 9 Write Reset Command Data = 01H? Yes Yes Protect Another Sector? No Device Failed Remove V ID from A 9 Write Reset Command Sector Protection Completed * : A-1 is V IL on byte mode. Figure 26 52 Sector Protection Algorithm MBM29SL160TD-10/-12/MBM29SL160BD-10/-12 Start RESET = VID (Note 1) Perform Erase or Program Operations RESET = VIH Temporary Sector Unprotection Completed (Note 2) Notes: 1. All protected sectors are unprotected. 2. All previously protected sectors are protected once again. Figure 27 Temporary Sector Unprotection Algorithm 53 MBM29SL160TD-10/-12/MBM29SL160BD-10/-12 FAST MODE ALGORITHM Start 555H/AAH Set Fast Mode 2AAH/55H 555H/20H XXXH/A0H Program Address/Program Data Data Polling Device Verify Byte? No In Fast Program Yes Increment Address No Last Address ? Yes Programming Completed XXXH/90H Reset Fast Mode XXXH/F0H * : The sequence is applied for × 16 mode. The addresses differ from × 8 mode. Figure 28 54 Embedded ProgramTM Algorithm for Fast Mode MBM29SL160TD-10/-12/MBM29SL160BD-10/-12 FAST MODE ALGORITHM Start RESET = VID Wait to 4 µs Device is Operating in Temporary Sector Unprotection Mode No Extended Sector Protection Entry? Yes To Setup Sector Protection Write XXXH/60H PLSCNT = 1 To Sector Protection Write SPA/60H (A0 = VIL, A1 = VIH, A6 = VIL) Time Out 150 µs Increment PLSCNT To Verify Sector Protection Write SPA/40H (A0 = VIL, A1 = VIH, A6 = VIL) Setup Next Sector Address Read from Sector Address (A0 = VIL, A1 = VIH, A6 = VIL) No No PLSCNT = 25? Yes Data = 01H? Yes Remove VID from RESET Write Reset Command Protection Other Sector ? No Yes Remove VID from RESET Write Reset Command Device Failed Sector Protection Completed Figure 29 Extended Sector Protection Algorithm 55 MBM29SL160TD-10/-12/MBM29SL160BD-10/-12 ■ ERASE AND PROGRAMMING PERFORMANCE Limits Parameter Unit Comments Min. Typ. Max. Sector Erase Time — 1.5 20 sec Word Programming Time — 14.6 360 µs Byte Programming Time — 10.6 300 µs Chip Programming Time — 15.4 160 sec 100,000 — — cycles Program/Erase Cycle Excludes programming time prior to erasure Excludes system-level overhead Excludes system-level overhead — Note: ■ TSOP(I) PIN CAPACITANCE Parameter Symbol Parameter Description Test Setup Typ. Max. Unit 7.5 9.5 pF CIN Input Capacitance VIN = 0 COUT Output Capacitance VOUT = 0 8 10 pF CIN2 Control Pin Capacitance VIN = 0 8 13 pF Typ. Max. Unit 7.5 9.5 pF Note: Test conditions TA = 25°C, f = 1.0 MHz ■ FBGA PIN CAPACITANCE Parameter Symbol Parameter Description CIN Input Capacitance VIN = 0 COUT Output Capacitance VOUT = 0 8 10 pF CIN2 Control Pin Capacitance VIN = 0 8 13 pF Note: Test conditions TA = 25°C, f = 1.0 MHz 56 Test Setup MBM29SL160TD-10/-12/MBM29SL160BD-10/-12 ■ ORDERING INFORMATION Standard Products Fujitsu standard products are available in several packages. The order number is formed by a combination of: MBM29SL160 T D -10 PFTN PACKAGE TYPE PFTN = 48-Pin Thin Small Outline Package (TSOP) Standard Pinout PFTR = 48-Pin Thin Small Outline Package (TSOP) Reverse Pinout PBT = 48-Ball Fine pitch Ball Grid Array Package (FBGA) SPEED OPTION See Product Selector Guide DEVICE REVISION BOOT CODE SECTOR ARCHITECTURE T = Top sector B = Bottom sector DEVICE NUMBER/DESCRIPTION MBM29SL160 16Mega-bit (2M × 8-Bit or 1M × 16-Bit) CMOS Flash Memory 1.8 V-only Read, Program, and Erase 57 MBM29SL160TD-10/-12/MBM29SL160BD-10/-12 ■ PACKAGE DIMENSIONS 48-pin plastic TSOP(I) (FPT-48P-M19) * Resin Protrusin. (Each Side: 0.15 (.006)Max) LEAD No. 1 48 Details of "A" part INDEX 0.15(.006) MAX 0.35(.014) MAX "A" 0.15(.006) 24 25 * 12.00±0.20 20.00±0.20 (.787±.008) * 18.40±0.20 (.724±.008) 0.10(.004) (.472±.008) 11.50REF (.460) 19.00±0.20 (.748±.008) 1996 FUJITSU LIMITED F48029S-2C-2 +0.10 1.10 –0.05 +.004 .043 –.002 (Mounting height 0.50(.0197) TYP 0.15±0.05 (.006±.002) C 0.25(.010) 0.05(0.02)MIN (STAND OFF) 0.20±0.10 (.008±.004) 0.10(.004) M 0.50±0.10 (.020±.004) Dimensions in mm (inches) (Continued) 58 MBM29SL160TD-10/-12/MBM29SL160BD-10/-12 (Continued) 48-pin plastic TSOP(I) (FPT-48P-M20) * Resin Protrusin. (Each Side: 0.15 (.006)Max) LEAD No. 1 48 Details of "A" part INDEX 0.15(.006) MAX 0.35(.014) MAX "A" 0.15(.006) 24 0.25(.010) 25 19.00±0.20 (.748±.008) 0.50±0.10 (.020±.004) 0.15±0.10 (.006±.002) 0.10(.004) 0.20±0.10 (.008±.004) 0.50(.0197) TYP 0.10(.004) M 0.05(0.02)MIN (STAND OFF) +0.10 1.10 –0.05 * 18.40±0.20 (.724±.008) 20.00±0.20 (.787±.008) C 1996 FUJITSU LIMITED F48030S-2C-2 11.50(.460)REF +.004 .043 –.002 (Mounting height) * 12.00±0.20(.472±.008) Dimensions in mm (inches) (Continued) 59 MBM29SL160TD-10/-12/MBM29SL160BD-10/-12 (Continued) 48-pin plastic FBGA (BGA-48P-M13) Note: The actual shape of corners may differ from the dimension. +0.15 9.00±0.20(.354±.008) +.006 1.05 –0.10 .041 –.004 (Mounting height) 0.38±0.10(.015±.004) (Stand off) 5.60(.221) 0.80(.031)TYP 6 5 8.00±0.20 (.315±.008) 4 4.00(.157) 3 INDEX 2 1 H C0.25(.010) G F E D 48-Ø0.45±0.10 (48-.018±.004) C B A Ø0.08(.003) M 0.10(.004) C 60 1998 FUJITSU LIMITED B480013S-1C-1 Dimensions in mm (inches) MBM29SL160TD-10/-12/MBM29SL160BD-10/-12 FUJITSU LIMITED For further information please contact: Japan FUJITSU LIMITED Corporate Global Business Support Division Electronic Devices KAWASAKI PLANT, 4-1-1, Kamikodanaka Nakahara-ku, Kawasaki-shi Kanagawa 211-8588, Japan Tel: 81(44) 754-3763 Fax: 81(44) 754-3329 http://www.fujitsu.co.jp/ North and South America FUJITSU MICROELECTRONICS, INC. Semiconductor Division 3545 North First Street San Jose, CA 95134-1804, USA Tel: (408) 922-9000 Fax: (408) 922-9179 Customer Response Center Mon. - Fri.: 7 am - 5 pm (PST) Tel: (800) 866-8608 Fax: (408) 922-9179 http://www.fujitsumicro.com/ Europe FUJITSU MICROELECTRONICS EUROPE GmbH Am Siebenstein 6-10 D-63303 Dreieich-Buchschlag Germany Tel: (06103) 690-0 Fax: (06103) 690-122 http://www.fujitsu-ede.com/ Asia Pacific FUJITSU MICROELECTRONICS ASIA PTE LTD #05-08, 151 Lorong Chuan New Tech Park Singapore 556741 Tel: (65) 281-0770 Fax: (65) 281-0220 http://www.fmap.com.sg/ F9910 FUJITSU LIMITED Printed in Japan All Rights Reserved. The contents of this document are subject to change without notice. Customers are advised to consult with FUJITSU sales representatives before ordering. The information and circuit diagrams in this document are presented as examples of semiconductor device applications, and are not intended to be incorporated in devices for actual use. Also, FUJITSU is unable to assume responsibility for infringement of any patent rights or other rights of third parties arising from the use of this information or circuit diagrams. FUJITSU semiconductor devices are intended for use in standard applications (computers, office automation and other office equipment, industrial, communications, and measurement equipment, personal or household devices, etc.). CAUTION: Customers considering the use of our products in special applications where failure or abnormal operation may directly affect human lives or cause physical injury or property damage, or where extremely high levels of reliability are demanded (such as aerospace systems, atomic energy controls, sea floor repeaters, vehicle operating controls, medical devices for life support, etc.) are requested to consult with FUJITSU sales representatives before such use. The company will not be responsible for damages arising from such use without prior approval. 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