ETC2 FZT688B Sot223 npn silicon planar medium power high gain transistor Datasheet

SOT223 NPN SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
FZT688B
TYPICAL CHARACTERISTICS
Tamb=25°C
IC/IB=200
IC/IB=100
IC/IB=10
0.6
V
V
0.4
0.2
0
0.01
0.1
1
IC - Collector Current (Amps)
-55°C
+25°C
+100°C
+175°C
0.8
- (Volts)
- (Volts)
0.8
PARTMARKING DETAIL –
COMPLEMENTARY TYPE -
0.4
ABSOLUTE MAXIMUM RATINGS.
0.2
10
0.01
0.1
1
IC - Collector Current (Amps)
VCE(sat) v IC
0.6
500
0.4
0.2
- (Volts)
1.4
0.01
0.1
- (Volts)
0.4
VBE(sat) v IC
1.0
0.8
0.6
0.4
0.2
0
1
DC
1s
100ms
10ms
1ms
100µs
0.1
C
0.01
0.1
1
10
10
1.2
UNIT
12
V
Collector-Emitter Voltage
VCEO
12
V
Emitter-Base Voltage
VEBO
5
V
Peak Pulse Current
ICM
10
A
Continuous Collector Current
IC
4
A
Power Dissipation at Tamb=25°C
Ptot
2
W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
Collector Cut-Off Current
0.2
VCE=2V
VALUE
VCBO
0.6
hFE v IC
-55°C
+25°C
+100°C
+175°C
SYMBOL
Collector-Base Voltage
0.8
0.01
0.1
1
IC - Collector Current (Amps)
0.01
0.1V
10
1V
10V
VCE - Collector Emitter Voltage (V)
IC - Collector Current (Amps)
Safe Operating Area
VBE(on) v IC
B
PARAMETER
Breakdown Voltages
0
E
C
FZT688B
FZT788B
PARAMETER
IC - Collector Current (Amps)
C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
1.0
10
1
IC/IB=100
1.2
I -Collector Current (A)
1.6
0
1.4
V
0.8
- Typical Gain
1K
-55°C
+25°C
+100°C
+175°C
1.6
1.5K
1.0
0 0
V
VCE=2V
h
- Normalised Gain
h
1.4
1.2
10
VCE(sat) v IC
+100°C
+25°C
-55°C
1.6
IC/IB=100
0.6
0
FZT688B
ISSUE 3 - OCTOBER 1995
FEATURES
* Extremely low equivalent on resistance; RCE(sat) 83mΩ at 3A
* Gain of 400 at IC=3 Amps and very low saturation voltage
APPLICATIONS
* Flash gun convertors & Battery powered circuits
100V
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
V(BR)CBO 12
V
IC=100µ A
V(BR)CEO
12
V
IC=10mA*
V(BR)EBO
5
V
IE=100µ A
ICBO
0.1
µA
VCB=10V
Emitter Cut-Off Current
IEBO
0.1
µA
VEB=4V
Collector-Emitter
Saturation Voltage
VCE(sat)
0.04
0.06
0.18
0.35
0.40
V
V
V
V
V
IC=0.1A, IB=1mA
IC=0.1A,IB=0.5mA*
IC=1A, IB=50mA*
IC=3A, IB=20mA*
IC=4A, IB=50mA*
Base-Emitter SaturationVoltage
VBE(sat)
1.1
V
IC=3A, IB=20mA*
Base-Emitter Turn-On Voltage
VBE(on)
1.0
V
IC=3A, VCE=2V
Static Forward Current Transfer
Ratio
hFE
500
400
100
Transition Frequency
fT
150
Input Capacitance
Cibo
Output Capacitance
Cobo
Switching Times
ton
toff
IC=0.1A, VCE=2V*
IC=3A, VCE=2V*
IC=10A, VCE=2V*
MHz
IC=50mA,VCE=5V
f=50MHz
200
pF
VEB=0.5Vf=1MHz
40
pF
VCB=10V,f=1MHz
40
500
ns
ns
I C=500mA, IB1=50A
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
3 - 218
3 - 217
IB2=50mA, VCC=10V
SOT223 NPN SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
FZT688B
TYPICAL CHARACTERISTICS
Tamb=25°C
IC/IB=200
IC/IB=100
IC/IB=10
0.6
V
V
0.4
0.2
0
0.01
0.1
1
IC - Collector Current (Amps)
-55°C
+25°C
+100°C
+175°C
0.8
- (Volts)
- (Volts)
0.8
PARTMARKING DETAIL –
COMPLEMENTARY TYPE -
0.4
ABSOLUTE MAXIMUM RATINGS.
0.2
10
0.01
0.1
1
IC - Collector Current (Amps)
VCE(sat) v IC
0.6
500
0.4
0.2
- (Volts)
1.4
0.01
0.1
- (Volts)
0.4
VBE(sat) v IC
1.0
0.8
0.6
0.4
0.2
0
1
DC
1s
100ms
10ms
1ms
100µs
0.1
C
0.01
0.1
1
10
10
1.2
UNIT
12
V
Collector-Emitter Voltage
VCEO
12
V
Emitter-Base Voltage
VEBO
5
V
Peak Pulse Current
ICM
10
A
Continuous Collector Current
IC
4
A
Power Dissipation at Tamb=25°C
Ptot
2
W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
Collector Cut-Off Current
0.2
VCE=2V
VALUE
VCBO
0.6
hFE v IC
-55°C
+25°C
+100°C
+175°C
SYMBOL
Collector-Base Voltage
0.8
0.01
0.1
1
IC - Collector Current (Amps)
0.01
0.1V
10
1V
10V
VCE - Collector Emitter Voltage (V)
IC - Collector Current (Amps)
Safe Operating Area
VBE(on) v IC
B
PARAMETER
Breakdown Voltages
0
E
C
FZT688B
FZT788B
PARAMETER
IC - Collector Current (Amps)
C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
1.0
10
1
IC/IB=100
1.2
I -Collector Current (A)
1.6
0
1.4
V
0.8
- Typical Gain
1K
-55°C
+25°C
+100°C
+175°C
1.6
1.5K
1.0
0 0
V
VCE=2V
h
- Normalised Gain
h
1.4
1.2
10
VCE(sat) v IC
+100°C
+25°C
-55°C
1.6
IC/IB=100
0.6
0
FZT688B
ISSUE 3 - OCTOBER 1995
FEATURES
* Extremely low equivalent on resistance; RCE(sat) 83mΩ at 3A
* Gain of 400 at IC=3 Amps and very low saturation voltage
APPLICATIONS
* Flash gun convertors & Battery powered circuits
100V
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
V(BR)CBO 12
V
IC=100µ A
V(BR)CEO
12
V
IC=10mA*
V(BR)EBO
5
V
IE=100µ A
ICBO
0.1
µA
VCB=10V
Emitter Cut-Off Current
IEBO
0.1
µA
VEB=4V
Collector-Emitter
Saturation Voltage
VCE(sat)
0.04
0.06
0.18
0.35
0.40
V
V
V
V
V
IC=0.1A, IB=1mA
IC=0.1A,IB=0.5mA*
IC=1A, IB=50mA*
IC=3A, IB=20mA*
IC=4A, IB=50mA*
Base-Emitter SaturationVoltage
VBE(sat)
1.1
V
IC=3A, IB=20mA*
Base-Emitter Turn-On Voltage
VBE(on)
1.0
V
IC=3A, VCE=2V
Static Forward Current Transfer
Ratio
hFE
500
400
100
Transition Frequency
fT
150
Input Capacitance
Cibo
Output Capacitance
Cobo
Switching Times
ton
toff
IC=0.1A, VCE=2V*
IC=3A, VCE=2V*
IC=10A, VCE=2V*
MHz
IC=50mA,VCE=5V
f=50MHz
200
pF
VEB=0.5Vf=1MHz
40
pF
VCB=10V,f=1MHz
40
500
ns
ns
I C=500mA, IB1=50A
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
3 - 218
3 - 217
IB2=50mA, VCC=10V
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