MOTOROLA MJE2361T 0.5 ampere power transistors npn silicon 350 volts 30 watt Datasheet

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SEMICONDUCTOR TECHNICAL DATA
0.5 AMPERE
POWER TRANSISTORS
NPN SILICON
350 VOLTS
30 WATTS
. . . useful for general–purpose, high voltage applications requiring high fT.
• Collector–Emitter Sustaining Voltage —
VCEO(sus) = 350 Vdc (Min) @ IC = 2.5 mAdc
• DC Current Gain —
hFE = 40 (Min) @ IC = 100 mAdc — MJE2361T
• Current–Gain–Bandwidth Product —
fT = 10 MHz (Typ) @ IC = 50 mAdc
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MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Symbol
Value
Unit
VCEO
350
Vdc
Collector–Base Voltage
VCB
375
Vdc
Emitter–Base Voltage
VEB
6.0
Vdc
Collector Current — Continuous
IC
0.5
Adc
Base Current
IB
0.25
Adc
Total Power Dissipation @ TC = 25_C
Derate above 25_C
PD
30
0.24
Watts
W/_C
TJ, Tstg
– 65 to + 150
_C
Symbol
Max
Unit
θJC
4.167
_C/W
Operating and Storage Junction
Temperature Range
CASE 221A–06
TO–220AB
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
PD, POWER DISSIPATION (WATTS)
40
35
30
25
20
15
10
5.0
0
0
20
40
80
120
60
100
TC, CASE TEMPERATURE (°C)
140
160
Figure 1. Power–Temperature Derating Curve
REV 1
 Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
1
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v
v
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
VCEO(sus)
350
—
—
Vdc
Collector Cutoff Current
(VCE = 250 Vdc, IB = 0)
ICEO
—
—
0.25
mAdc
Collector Cutoff Current
(VCE = 375 Vdc, VEB(off) = 1.5 Vdc)
ICEX
—
—
0.5
mAdc
Collector Cutoff Current
(VCB = 375 Vdc, IE = 0)
ICBO
—
—
0.1
mAdc
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
—
—
0.1
mAdc
25
50
15
40
—
—
—
—
200
250
—
—
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage(1)
(IC = 2.5 mAdc, IB = 0)
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 50 mAdc, VCE = 10 Vdc)
hFE
MJE2360T
MJE2361T
MJE2360T
MJE2361T
(IC = 100 mAdc, VCE = 10 Vdc)
—
Collector–Emitter Saturation Voltage
(IC = 100 mAdc, IB = 10 mAdc)
VCE(sat)
—
—
1.5
Vdc
Base–Emitter On Voltage
(IC = 100 mAdc, VCE = 10 Vdc)
VBE(on)
—
—
1.0
Vdc
fT
—
10
—
MHz
Cob
—
20
—
pF
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 50 mAdc, VCE = 10 Vdc, f = 1.0 MHz)
Output Capacitance
(VCB = 100 Vdc, IE = 0, f = 100 kHz)
(1) Pulse Test: Pulse Width
300 µs, Duty Cycle
2.0%.
IC, COLLECTOR CURRENT (AMP)
1.0
0.5
0.3
0.2
0.1
0.05
SECONDARY BREAKDOWN LIMITED
BONDING WIRE LIMITED
0.03
The Safe Operating Area Curves indicate IC – VCE limits
below which the device will not enter secondary breakdown.
Collector load lines for specific circuits must fall within the applicable Safe Area to avoid causing a catastrophic failure. To
insure operation below the maximum TJ, power–temperature
derating must be observed for both steady state and pulse
power conditions.
0.02
0.01
1.0
TJ = 150°C
2.0
20
50
100 200
500 1000
5.0
10
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 2. DC Safe Operating Area
2
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
–T–
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
–––
–––
0.080
STYLE 1:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
–––
–––
2.04
BASE
COLLECTOR
EMITTER
COLLECTOR
CASE 221A–06
TO–220AB
ISSUE Y
Motorola Bipolar Power Transistor Device Data
3
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4
◊
Motorola Bipolar Power Transistor Device Data
*MJE2360T/D*
MJE2360T/D
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