Rohm IMH7 General purpose (dual digital transistors) Datasheet

UMH7N / IMH7A
Transistors
General purpose (dual digital transistors)
UMH7N / IMH7A
!External dimensions (Units : mm)
(1)
1.25
!Absolute maximum ratings (Ta=25°C)
Tj
Junction temperature
Storage temperature
Tstg
mW
˚C
0.1Min.
∗1
∗2
˚C
(5)
3000
3000
0.3to0.6
ROHM : SMT6
EIAJ : SC-74
!Circuit diagram
UMH7N
IMH7A
R1
R1
R1
R1
!Electrical characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Parameter
BVCBO
BVCEO
−
−
−
−
−
−
−
ICBO
50
50
5
−
0.5
V
V
V
µA
IEBO
−
−
0.5
µA
VEB=4V
DC current transfer ratio
Collector-emitter saturation voltage
Input resistance
hFE
100
600
0.3
−
V
VCE / IC=5V / 1mA
6.11
kΩ
BVEBO
VCE(sat)
−
250
−
R1
3.29
4.7
Conditions
IC=50µA
IC=1mA
IE=50µA
VCB=50V
IC / IB=5mA / 0.25mA
−
0.8
TR
SMT6
H7
T108
0to0.1
IMH7A
UMT6
H7
2.0
2.8
0.15
UMH7N
(3)
(4)
1.6
!Package, marking, and Packaging specifications
Part No.
0.9
IMH7A
120mW per element must not be exceeded.
200mW per element must not be exceeded.
Package
Marking
Code
Basic ordering unit (pieces)
Each lead has same dimensions
ROHM : UMT6
EIAJ : SC-88
0.3
∗1
∗2
150 (TOTAL)
300 (TOTAL)
150
−55∼+150
0.7
V
mA
0.95 0.95
1.9
2.9
5
100
1.1
V
V
VEBO
IC
(1)
Unit
50
50
(2)
Limits
VCBO
VCEO
0to0.1
Symbol
(6)
Parameter
0.15
2.1
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
UMH7N
Collector power
dissipation
FMG13, IMH7A
Pc
1.3
(3)
(2)
(4)
(5)
(6)
0.2
0.65
UMH7N
0.65
!Features
1) Includes two DTC143T transistors in a single UMT
package.
Each lead has same dimensions
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