NXP BFG10 Npn 2 ghz rf power transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
BFG10; BFG10/X
NPN 2 GHz RF power transistor
Product specification
Supersedes data of 1995 Mar 07
File under Discrete Semiconductors, SC14
1995 Aug 31
Philips Semiconductors
Product specification
NPN 2 GHz RF power transistor
FEATURES
BFG10; BFG10/X
PINNING
• High power gain
PIN
• High efficiency
DESCRIPTION
BFG10 (see Fig.1)
• Small size discrete power amplifier
1
collector
• 1.9 GHz operating area
2
base
• Gold metallization ensures
excellent reliability.
3
emitter
4
emitter
handbook, 2 columns
4
1
1
collector
• Common emitter class-AB
operation in hand-held radio
equipment at 1.9 GHz.
2
emitter
3
base
4
emitter
DESCRIPTION
2
Top view
BFG10/X (see Fig.1)
APPLICATIONS
3
MSB014
Fig.1 SOT143.
MARKING
NPN silicon planar epitaxial transistor
encapsulated in plastic, 4-pin
dual-emitter SOT143 package.
TYPE NUMBER
CODE
BFG10
N70
BFG10/X
N71
QUICK REFERENCE DATA
RF performance at Tamb = 25 °C in a common-emitter test circuit (see Fig.7).
MODE OF OPERATION
Pulsed, class-AB, duty cycle: < 1 : 8
f
(GHz)
VCE
(V)
PL
(mW)
Gp
(dB)
ηc
(%)
1.9
3.6
200
≥5
≥50
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
20
V
VCEO
collector-emitter voltage
open base
−
8
V
VEBO
emitter-base voltage
open collector
−
2.5
V
IC
collector current (DC)
−
250
mA
IC(AV)
average collector current
−
250
mA
Ptot
total power dissipation
−
400
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
175
°C
up to Ts = 60 °C; see Fig.2; note 1
Note
1. Ts is the temperature at the soldering point of the collector pin.
1995 Aug 31
2
Philips Semiconductors
Product specification
NPN 2 GHz RF power transistor
BFG10; BFG10/X
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
thermal resistance from junction to
soldering point
Rth j-s
VALUE
UNIT
290
K/W
up to Ts = 60 °C; note 1;
Ptot = 400 mW
Note
1. Ts is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
V(BR)CBO
collector-base breakdown voltage
open emitter; IC = 0.1 mA
20
MAX.
−
UNIT
V
V(BR)CEO
collector-emitter breakdown voltage
open base; IC = 5 mA
8
−
V
V(BR)EBO
emitter-base breakdown voltage
open collector; IE = 0.1 mA
2.5
−
V
ICES
collector leakage current
VCE = 5 V; VBE = 0
−
100
µA
hFE
DC current gain
IC = 50 mA; VCE = 5 V
25
−
Cc
collector capacitance
IE = ie = 0; VCB = 3.6 V; f = 1 MHz
−
3
pF
Cre
feedback capacitance
IC = 0; VCE = 3.6 V; f = 1 MHz
−
2
pF
MLC818
500
MLC819
2.0
handbook, halfpage
handbook, halfpage
P tot
(mW)
Cc
(pF)
400
1.5
300
1.0
200
0.5
100
0
0
0
50
100
150
o
0
200
2
Ts ( C)
4
6
8
10
V CB (V)
IC = 0; f = 1 MHz.
Fig.3
Fig.2
1995 Aug 31
Power derating curve
3
Collector capacitance as a function of
collector-base voltage; typical values.
Philips Semiconductors
Product specification
NPN 2 GHz RF power transistor
BFG10; BFG10/X
APPLICATION INFORMATION
RF performance at Tamb = 25 °C in a common-emitter test circuit (see Fig.7).
MODE OF OPERATION
f
(GHz)
VCE
(V)
ICQ
(mA)
PL
(mW)
Pulsed, class-AB, duty cycle: < 1 : 8
1.9
3.6
1
200
Gp
(dB)
ηc
(%)
>5
>50
typ. 7
typ. 60
Ruggedness in class-AB operation
The BFG10 is capable of withstanding a load mismatch corresponding to VSWR = 8 : 1 through all phases, at rated
output power under pulsed conditions up to a supply voltage of 7 V, f = 1.9 GHz and a duty cycle of 1 : 8.
MLC820
10
handbook, halfpage
Gp
(dB)
8
ηc
MLC821
100
ηc
500
handbook, halfpage
PL
(mW)
(%)
80
400
60
300
4
40
200
2
20
100
Gp
6
0
0
100
200
300
0
400
500
P L (mW)
0
0
Pulsed, class-AB operation.
VCE = 3.6 V; VBE = 0.65 V; f = 1.9 GHz; duty cycle < 1 : 8.
Circuit optimized for PL = 200 mW.
Fig.4
1995 Aug 31
50
100
PD (mW)
150
Pulsed, class-AB operation.
VCE = 3.6 V; VBE = 0.65 V; f = 1.9 GHz; duty cycle < 1 : 8.
Circuit optimized for PL = 200 mW.
Power gain and efficiency as functions
of load power; typical values.
Fig.5
4
Load power as a function of drive
power; typical values.
Philips Semiconductors
Product specification
NPN 2 GHz RF power transistor
BFG10; BFG10/X
SPICE parameters for the BFG10 crystal
SEQUENCE No.
PARAMETER
VALUE
UNIT
1
IS
2.714
fA
2
BF
102.8
−
3
NF
0.998
−
4
VAF
28.12
V
5
IKF
6.009
A
6
ISE
403.2
pA
7
NE
2.937
−
8
BR
31.01
−
9
NR
0.999
−
10
VAR
2.889
V
11
IKR
0.284
A
12
ISC
1.487
fA
13
NC
1.100
−
14
RB
3.500
Ω
15
IRB
1.000
µA
16
RBM
3.500
Ω
17
RE
0.217
Ω
18
RC
0.196
Ω
19(1)
XTB
0.000
−
20(1)
EG
1.110
eV
21(1)
XTI
3.000
−
22
CJE
5.125
pF
23
VJE
0.600
V
24
MJE
0.367
−
25
TF
12.07
ps
C cb
handbook, halfpage
L1
LB
B
L2
B'
C be
C'
E'
C
Cce
LE
MBC964
L3
E
QLB = 50; QLE = 50; QLB,E(f) = QLB,E√(f/fc);
fc = scaling frequency = 100 MHz.
Fig.6 Package equivalent circuit SOT143.
List of components (see Fig.6)
DESIGNATION
VALUE
UNIT
Cbe
84
fF
Ccb
17
fF
Cce
191
fF
L1
0.12
nH
L2
0.21
nH
0.06
nH
26
XTF
99.40
−
L3
27
VTF
7.220
V
LB
0.95
nH
28
ITF
3.950
A
LE
0.40
nH
29
PTF
0.000
deg
30
CJC
2.327
pF
31
VJC
0.668
V
32
MJC
0.398
−
33
XCJC
0.160
−
34(1)
TR
0.000
ns
35(1)
CJS
0.000
F
36(1)
VJS
750.0
mV
37(1)
MJS
0.000
−
38
FC
0.652
−
Note
1. These parameters have not been extracted,
the default values are shown.
1995 Aug 31
5
Philips Semiconductors
Product specification
NPN 2 GHz RF power transistor
BFG10; BFG10/X
Test circuit information
handbook, full pagewidth
V bias
R2
VS
R1
T1
,,
,,
,,
,,
,,
,,,,
C12
,,,
,
,
,,,,
L10
C14, C15,
C16
L9
L7
C11
C10
L8
50 Ω
input
L2
C1
C13
L6
DUT
L1
L4
L3
C2, C3,
C4, C5
L5
C6, C7,
C8
50 Ω
output
C9
MLC822
Fig.7 Common-emitter test circuit for class-AB operation at 1.9 GHz.
1995 Aug 31
6
Philips Semiconductors
Product specification
NPN 2 GHz RF power transistor
BFG10; BFG10/X
List of components used in test circuit (see Fig.7)
COMPONENT
DESCRIPTION
VALUE
C1, C9, C10, C11
multilayer ceramic chip capacitor; note 1
24 pF
C2, C3, C4, C5,
C6, C7
multilayer ceramic chip capacitor; note 1
0.86 pF
DIMENSIONS
CATALOGUE No.
C8
multilayer ceramic chip capacitor; note 1
1.1 pF
C12, C13
electrolytic capacitor
470 µF; 10 V
C14, C15, C16
multilayer ceramic chip capacitor; note 1
10 nF
L1
stripline; note 2
length 28.5 mm
width 0.93 mm
L2
stripline; note 2
length 2.3 mm
width 0.93 mm
L3
stripline; note 2
length 3.1 mm
width 0.93 mm
L4
stripline; note 2
length 3.3 mm
width 0.93 mm
L5
stripline; note 2
length 16.3 mm
width 0.93 mm
L6
stripline; note 2
length 10 mm
width 0.93 mm
L7
stripline; note 2
length 4.4 mm
width 0.4 mm
L8
stripline; note 2
length 19.3 mm
width 0.93 mm
L9
stripline; note 2
length 19.7 mm
width 0.4 mm
L10
micro choke
T1
BD228
R1
metal film resistor
20 Ω; 0.4 W
2322 157 10209
R2
metal film resistor
530 Ω; 0.4 W
2322 157 15301
2222 031 34471
Notes
1. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality.
2. The striplines are on a 1⁄32 inch double copper-clad printed-circuit board with PTFE fibre-glass dielectric (εr = 6).
1995 Aug 31
7
Philips Semiconductors
Product specification
NPN 2 GHz RF power transistor
BFG10; BFG10/X
handbook, full pagewidth
60
Collector
Base
70
V bias
R2
T1
R1
L10
C12
L9
C15
C14
C11
C13
VS
C16
L8
L7
C10
C3 C4
C5
L6
C6
C2
C1
L5
L1
Base
L2 L3
L4 C7 C8 Collector
C9
MLC823
Dimensions in mm.
The components are situated on one side of the copper-clad PTFE microfibre-glass board, the other side is not etched and
serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization.
Fig.8 Printed-circuit board and component lay-out for common-emitter test circuit in Fig.7.
1995 Aug 31
8
Philips Semiconductors
Product specification
NPN 2 GHz RF power transistor
BFG10; BFG10/X
PACKAGE OUTLINE
handbook, full pagewidth
0.75
0.60
3.0
2.8
0.150
0.090
B
1.9
4
3
0.1
max
o
10
max
0.2 M A B
A
1.4
1.2
2.5
max
o
10
max
1
1.1
max
o
30
max
0.88
2
0
0.1
0.48
1.7
TOP VIEW
Dimensions in mm.
Fig.9 SOT143.
1995 Aug 31
9
0
0.1
0.1 M A B
MBC845
Philips Semiconductors
Product specification
NPN 2 GHz RF power transistor
BFG10; BFG10/X
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1995 Aug 31
10
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