HITACHI 2SC5480

2SC5480
Silicon NPN Triple Diffused
Horizntal Deflection Output
ADE-208-632 (Z)
1st. Edition
Oct. 1, 1998
Features
• High breakdown voltage
VCES = 1500 V
• Isolated package
TO–3PFM
• Built-in damper diode
Outline
TO–3PFM
C
2
1
B
1. Base
2. Collector
3. Emitter
3
E
1
2
3
2SC5480
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to emitter voltage
VCES
1500
V
Emitter to base voltage
VEBO
5
V
Collector current
IC
14
A
Collector peak current
ic(peak)
28
A
50
W
Note1
Collector power dissipation
PC
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Collector to emitter diode forward current
ID
14
A
Note:
1. Value at Tc = 25°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Emitter to base breakdown
voltage
V(BR)EBO
5
—
—
V
I E = 500mA, IC = 0
Collector cutoff current
I CES
—
—
500
µA
VCE = 1500V, RBE = 0
DC current transfer ratio
hFE1
5
—
25
VCE = 5 V, IC = 1A
DC current transfer ratio
hFE2
4
—
7
VCE = 5 V, IC = 10A
Collector to emitter saturation VCE(sat)
voltage
—
—
5
V
I C = 10A, IB = 2.5A
Base to emitter saturation
voltage
VBE(sat)
—
—
1.5
V
I C = 10A, IB = 2.5A
Collector to emitter diode
forward voltage
VECF
—
—
2
V
I F = 14A
Fall time
tf
—
0.2
0.4
µs
I CP = 7A, IB1= 2.4A
f H = 31.5kHz
2
2SC5480
Main Characteristics
Area of Safe Operaion
50
I C (A)
80
60
Collector Current
Collector Power Dissipation
Pc (W)
Collector Power Dissipation
vs. Temperature
40
20
20
10
5
2
1
0.5
0.2
0
50
100
Case Temperature
150
Tc (°C)
0.1
100
5000
1000
10
Collector to Emitter Voltage VCE (V)
200
DC Current Transfer Ratio vs.
Collector Current
Typical Output Characteristics
50
0.8 A
Collector Current
W
0.6 A
0.4 A
5
0.2 A
IB = 0
Tc = 25 °C
0
5
50
=
I C (A)
Pc
h FE
100
1.4 A
1.2 A
1.0 A
DC Current Transfer Ratio
10
L = 180 µH
I B2 = –1 A
duty < 1 %
Tc = 25°C
10
Collector to Emitter Voltage V CE (V)
20
75 °C
10
5
25 °C
Tc = –25 °C
2
VCE = 5 V
1
2
5 10 20
0.1 0.2
0.5 1
Collector Current I C (A)
3
2SC5480
Base to Emitter Saturation Voltage
vs. Collector Current
Collector to Emitter Saturation Voltage
vs. Collector Current
10
IC / I B = 4
5
75 °C
2
1
25 °C
0.5
0.2
Tc = –25 °C
0.1
0.05
0.1 0.2
2
5 10
0.5 1
Collector Current I C (A)
Base to Emitter Saturation Voltage
V BE(sat) (V)
Collector to Emitter Saturation Voltage
V CE(sat) (V)
10
I C/ I B= 4
5
2
Tc = –25°C
1
0.5
0.2
0.1
2
5 10
0.1 0.2
0.5 1
Collector Current I C (A)
20
20
Fall Time vs. Base Current
0.8
10
9A
Fall Time t f (µs)
Collector to Emitter Saturation Voltage
V CE(sat) (V)
Collector to Emitter Saturation Voltage
vs. Base Current
4
75 °C
25 °C
7A
5
I C= 5 A
Tc = 25°C
0
0.1 0.2
0.5
1
Base Current
2
I B (A)
5
10
0.6
I CP = 7 A
f H = 31.5 kHz
Tc = 25°C
0.4
0.2
0
1.0
1.4
1.8
2.2
2.6
3.0
Base Current I B1 (A)
3.4
2SC5480
f 3.2
5.8 Max
5.0
2.7
19.9 ± 0.3
16.0 Max
5.0 ± 0.3
Package Dimensions (Unit: mm)
2.6
1.6
1.4 Max
1.4 Max
21.0 ± 0.5
4.0
3.2
+0.2
0.66
5.45 ± 0.5
+0.2
–0.1
0.9 –0.1
5.45 ± 0.5
Hitachi Code
EIAJ
JEDEC
TO–3PFM
—
—
5
2SC5480
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan.
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