IXYS IXGT30N60C3D1 Genx3 600v igbt with diode Datasheet

IXGH30N60C3D1
IXGT30N60C3D1
GenX3TM 600V IGBT
with Diode
VCES
IC110
VCE(sat)
tfi(typ)
High speed PT IGBTs for
40-100 kHz Switching
=
=
≤
=
600V
30A
3.0V
47ns
TO-268 (IXGT)
Symbol
Test Conditions
Maximum Ratings
VCES
TJ = 25°C to 150°C
600
V
VCGR
TJ = 25°C to 150°C; RGE = 1MΩ
600
V
VGES
Continuous
±20
V
VGEM
Transient
±30
V
IC25
TC = 25°C
60
A
IC110
TC = 110°C
30
A
ID110
TC = 110°C
30
A
ICM
TC = 25°C, 1ms
150
A
SSOA
VGE = 15V, TVJ = 125°C, RG = 5Ω
ICM = 60
A
(RBSOA)
Clamped inductive load @ VCE ≤ 600V
PC
TC = 25°C
220
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
TJ
TL
1.6mm (0.062 in.) from case for 10s
300
°C
TSOLD
Plastic body for 10 seconds
260
°C
FC
Mounting torque (TO-247)
1.13/10
Nm/lb.in
Weight
TO-268
TO-247
4
6
g
g
G
E
C (TAB)
TO-247(IXGH)
G
C
E
G = Gate
E = Emitter
( TAB )
C
= Collector
TAB = Collector
Features
z
z
z
z
Optimized for low switching losses
Square RBSOA
Anti-parallel ultra fast diode
International standard packages
Advantages
z
z
Symbol
Test Conditions
BVCES
VGE(th)
IC
IC
ICES
VCE = VCES
VGE = 0V
IGES
VCE = 0V, VGE = ±20V
VCE(sat)
IC
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
= 250μA, VGE = 0V
= 250μA, VCE = VGE
600
3.5
5.5
75 μA
1 mA
TJ = 125°C
= 20A, VGE = 15V, Note 1
TJ = 125°C
© 2008 IXYS CORPORATION, All rights reserved
V
V
2.6
1.8
±100
nA
3.0
V
V
High power density
Low gate drive requirement
Applications
z
z
z
z
z
z
z
z
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
DS100013A(11/08)
IXGH30N60C3D1
IXGT30N60C3D1
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
Characteristic Values
Min.
Typ. Max.
gfs
IC = 20A, VCE = 10V, Note 1
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg
Qge
Qgc
IC = 20A, VGE = 15V, VCE = 0.5 • VCES
td(on)
tri
Eon
td(off)
tfi
Eoff
9
Inductive load, TJ = 25°C
IC = 20A, VGE = 15V
VCE = 300V, RG = 5Ω
td(on)
tri
Eon
td(off)
tfi
Eoff
IC = 20A, VGE = 15V
RthJC
RthCS
(TO-247)
Inductive load, TJ = 125°C
VCE = 300V, RG = 5Ω
TO-268 (IXGT) Outline
30
S
915
78
32
pF
pF
pF
38
8
17
nC
nC
nC
16
26
0.27
42
47
0.09
ns
ns
mJ
ns
ns
mJ
75
0.18
17
28
0.44
70
90
0.33
ns
ns
mJ
ns
ns
mJ
0.21
0.56 °C/W
°C/W
TO-247 AD Outline
Reverse Diode (FRED)
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
Symbol
Test Conditions
VF
IF = 30A, VGE = 0V, Note 1
TJ = 150°C
1.6
IRM
trr
IF = 30A, VGE = 0V, -diF/dt = 100A/μs, TJ = 100°C
VR = 100V
TJ =100°C
IF = 1A, -di/dt = 100A/μs, VR = 30V
100
25
2.7
V
V
4
A
ns
ns
0.9 °C/W
RthJC
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
∅P
e
Dim.
Millimeter
Min. Max.
A
4.7
5.3
2.2
2.54
A1
A2
2.2
2.6
b
1.0
1.4
b1
1.65
2.13
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXGH30N60C3D1
IXGT30N60C3D1
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
40
180
VGE = 15V
13V
35
140
30
11V
13V
120
25
IC - Amperes
IC - Amperes
VGE = 15V
160
20
9V
15
10
100
11V
80
60
9V
40
7V
5
20
0
7V
0
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
0
2
4
6
8
12
14
16
18
20
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics
@ 125ºC
40
1.1
VGE = 15V
13V
11V
35
VGE = 15V
1.0
VCE(sat) - Normalized
30
IC - Amperes
10
VCE - Volts
VCE - Volts
9V
25
20
15
I
C
= 40A
0.9
0.8
I
C
= 20A
0.7
10
I
0.6
5
C
= 10A
7V
0.5
0
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
25
3.2
50
VCE - Volts
75
100
125
150
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
Fig. 6. Input Admittance
70
5.5
TJ = 25ºC
60
5.0
50
I
4.0
C
IC - Amperes
VCE - Volts
4.5
= 40A
20A
10A
3.5
40
TJ = 125ºC
25ºC
- 40ºC
30
20
3.0
10
2.5
0
7
8
9
10
11
12
VGE - Volts
© 2008 IXYS CORPORATION, All rights reserved
13
14
15
5
6
7
8
VGE - Volts
9
10
11
IXGH30N60C3D1
IXGT30N60C3D1
Fig. 8. Gate Charge
Fig. 7. Transconductance
24
16
TJ = - 40ºC
22
18
125ºC
14
I C = 20A
I G = 10 mA
12
25ºC
16
VGE - Volts
g f s - Siemens
VCE = 300V
14
20
12
10
8
6
10
8
6
4
4
2
2
0
0
0
10
20
30
40
50
60
70
80
0
5
10
15
20
25
30
35
IC - Amperes
QG - NanoCoulombs
Fig. 9. Capacitance
Fig. 10. Reverse-Bias Safe Operating Area
40
10,000
60
50
Cies
1,000
IC - Amperes
Capacitance - PicoFarads
f = 1 MHz
Coes
100
40
30
20
TJ = 125ºC
10
Cres
0
100
10
0
5
10
15
20
25
30
35
40
RG = 5Ω
dV / dt < 10V / ns
200
300
VCE - Volts
400
500
600
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
Z(th)JC - ºC / W
1.00
0.10
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: G_30N60C3(4D)7-25-08
IXGH30N60C3D1
IXGT30N60C3D1
Fig. 13. Inductive Switching
Energy Loss vs. Collector Current
Fig. 12. Inductive Switching
Energy Loss vs. Gate Resistance
0.8
0.6
1.4
Eon -
Eoff
0.7
1.2
Eoff
---
0.6
0.3
I C = 20A
0.2
8
10
12
14
16
18
Eoff - MilliJoules
Eoff - MilliJoules
0.4
0.8
TJ = 125ºC
0.3
0.6
0.2
0.4
0.1
0.2
0.0
0.4
TJ = 25ºC
15
20
RG - Ohms
E
0.8
0.3
0.6
0.2
0.4
0.2
0
45
55
65
tf
160
TJ = 125ºC, VGE = 15V
75
td(off) - - - -
150
110
140
100
130
I
85
95
105
115
80
110
70
I
50
40
4
6
8
10
140
80
60
60
50
40
40
TJ = 25ºC
20
30
0
20
35
40
t f - Nanoseconds
t f - Nanoseconds
70
© 2008 IXYS CORPORATION, All rights reserved
18
20
td(off) - - - -
80
RG = 5Ω , VGE = 15V
120
70
100
60
I C = 40A, 20A
80
50
60
40
40
30
20
25
35
45
55
65
75
85
TJ - Degrees Centigrade
95
105
115
20
125
t d(off) - Nanoseconds
100
IC - Amperes
16
VCE = 300V
t d(off) - Nanoseconds
80
TJ = 125ºC
30
14
90
tf
90
25
12
160
100
VCE = 300V
20
60
Fig. 17. Inductive Turn-off
Switching Times vs. Junction Temperature
RG = 5Ω , VGE = 15V
15
= 20A
80
110
10
C
RG - Ohms
td(off) - - - -
120
90
= 40A
90
0.0
125
180
140
C
120
Fig. 16. Inductive Turn-off
Switching Times vs. Collector Current
160
120
VCE = 300V
TJ - Degrees Centigrade
tf
130
100
I C = 20A
35
- MilliJoules
0.4
t f - Nanoseconds
1.0
I C = 40A
25
170
t d(off) - Nanoseconds
VCE = 300V
0.1
40
140
1.2
on
Eoff - MilliJoules
----
RG = 5Ω , VGE = 15V
0.5
35
180
1.4
0.6
30
Fig. 15. Inductive Turn-off
Switching Times vs. Gate Resistance
0.7
Eon
25
IC - Amperes
Fig. 14. Inductive Switching
Energy Loss vs. Junction Temperature
Eoff
0.2
0.0
10
20
- MilliJoules
0.8
- MilliJoules
0.5
0.4
on
1.0
= 40A
E
C
on
I
E
0.6
6
1.0
VCE = 300V
VCE = 300V
4
----
RG = 5Ω , VGE = 15V
0.5
1.2
TJ = 125ºC , VGE = 15V
Eon
IXGH30N60C3D1
IXGT30N60C3D1
Fig. 19. Inductive Turn-on
Switching Times vs. Collector Current
Fig. 18. Inductive Turn-on
Switching Times vs. Gate Resistance
tr
80
70
28
60
60
I
C
24
= 40A
50
22
40
20
30
I
C
20
10
4
6
8
10
12
14
16
18
tr
td(on) - - - -
22
RG = 5Ω , VGE = 15V
VCE = 300V
50
20
TJ = 125ºC
40
18
TJ = 25ºC
30
16
20
14
16
10
12
14
0
18
= 20A
24
10
10
20
t d(on) - Nanoseconds
26
t d(on) - Nanoseconds
VCE = 300V
70
t r - Nanoseconds
td(on) - - - -
TJ = 125ºC, VGE = 15V
30
t r - Nanoseconds
90
15
20
25
30
35
40
IC - Amperes
RG - Ohms
Fig. 20. Inductive Turn-on
Switching Times vs. Junction Temperature
75
21
70
65
20
I C = 40A
t r - Nanoseconds
55
tr
50
td(on) - - - -
RG = 5Ω , VGE = 15V
45
VCE = 300V
19
18
40
35
I
30
C
17
= 20A
25
t d(on) - Nanoseconds
60
16
20
15
25
35
45
55
65
75
85
95
105
115
15
125
TJ - Degrees Centigrade
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: G_30N60C3(4D)7-25-08
IXGH30N60C3D1
IXGT30N60C3D1
60
A
1000
nC
50
IF
30
TVJ= 100°C
VR = 300V
25
800
Qr
IRM
40
30
TVJ=100°C
15
400
20
10
TVJ=25°C
200
10
0
IF= 60A
IF= 30A
IF= 15A
20
IF= 60A
IF= 30A
IF= 15A
600
TVJ=150°C
TVJ= 100°C
VR = 300V
A
0
1
0
100
3 V
2
5
A/μs 1000
-diF/dt
VF
Fig. 22. Reverse recovery charge Qr
versus -diF/dt
Fig. 21. Forward current IF versus VF
2.0
90
trr
1.5
Kf
200
400
600 A/μs
800 1000
-diF/dt
Fig. 23. Peak reverse current IRM
versus -diF/dt
1.00
TVJ= 100°C
IF = 30A
V
V FR
15
IF= 60A
IF= 30A
IF= 15A
80
0
20
TVJ= 100°C
VR = 300V
ns
0
μs
tfr
0.75
tfr
VFR
1.0
10
0.50
5
0.25
IRM
70
Qr
0.5
0.0
0
40
80
120 °C 160
60
0
200
T VJ
400
600
800
A/μs
1000
0
0
200
-diF/dt
Fig. 24. Dynamic parameters Qr, IRM
versus TVJ
Fig. 25. Recovery time trr versus
-diF/dt
1
K/W
0.00
600 A/μs
800 1000
diF/dt
Fig. 26. Peak forward voltage VFR
and tfr versus diF/dt
Constants for ZthJC calculation:
i
0.1
Z thJC
1
2
3
0.01
0.001
0.00001
400
DSEP 29-06
0.0001
0.001
0.01
Fig. 27. Transient thermal resistance junction to case
© 2008 IXYS CORPORATION, All rights reserved
0.1
t
s
1
Rthi (K/W)
ti (s)
0.502
0.193
0.205
0.0052
0.0003
0.0162
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