Diodes MMBT3906-7 Pnp small signal surface mount transistor Datasheet

MMBT3906
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
·
·
·
·
Epitaxial Planar Die Construction
Complementary NPN Type Available
(MMBT3904)
Ideal for Medium Power Amplification and
Switching
SOT-23
A
C
B
Mechanical Data
·
·
·
·
·
·
·
·
C
B TOP VIEW E
Case: SOT-23, Molded Plastic
Case material - UL Flammability Rating
Classification 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking (See Page 2): K3N
Ordering & Date Code Information: See Page 2
Weight: 0.008 grams (approx.)
D
E
Min
Max
A
0.37
0.51
B
1.20
1.40
C
2.30
2.50
D
0.89
1.03
E
0.45
0.60
G
1.78
2.05
H
2.80
3.00
J
0.013
0.10
K
0.903
1.10
G
H
K
J
M
L
C
L
0.45
0.61
M
0.085
0.180
a
0°
8°
All Dimensions in mm
E
B
Maximum Ratings
Dim
@ TA = 25°C unless otherwise specified
Characteristic
Symbol
MMBT3906
Unit
Collector-Base Voltage
VCBO
-40
V
Collector-Emitter Voltage
VCEO
-40
V
Emitter-Base Voltage
VEBO
-5.0
V
Collector Current - Continuous (Note 1)
IC
-200
mA
Power Dissipation (Note 1)
Pd
300
mW
RqJA
417
°C/W
Tj, TSTG
-55 to +150
°C
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
DS30059 Rev. 7 - 2
1 of 3
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MMBT3906
Electrical Characteristics
@ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
V(BR)CBO
-40
¾
V
IC = -10mA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
-40
¾
V
IC = -1.0mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
-5.0
¾
V
IE = -10mA, IC = 0
OFF CHARACTERISTICS (Note 2)
ICEX
¾
-50
nA
VCE = -30V, VEB(OFF) = -3.0V
ICBO
¾
-50
nA
VCB = -30V, IE = 0
IBL
¾
-50
nA
VCE = -30V, VEB(OFF) = -3.0V
hFE
60
80
100
60
30
¾
¾
300
¾
¾
¾
Collector-Emitter Saturation Voltage
VCE(SAT)
¾
-0.25
-0.40
V
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
Base- Emitter Saturation Voltage
VBE(SAT)
-0.65
¾
-0.85
-0.95
V
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
Output Capacitance
Cobo
¾
4.5
pF
VCB = -5.0V, f = 1.0MHz, IE = 0
Input Capacitance
Cibo
¾
10
pF
VEB = -0.5V, f = 1.0MHz, IC = 0
Input Impedance
hie
2.0
12
kW
Voltage Feedback Ratio
hre
0.1
10
x 10-4
Small Signal Current Gain
hfe
100
400
¾
Output Admittance
hoe
3.0
60
mS
Current Gain-Bandwidth Product
fT
250
¾
MHz
VCE = -20V, IC = -10mA,
f = 100MHz
Noise Figure
NF
¾
4.0
dB
VCE = -5.0V, IC = -100mA,
RS = 1.0kW, f = 1.0kHz
Delay Time
td
¾
35
ns
Rise Time
tr
¾
35
ns
Storage Time
ts
¾
225
ns
Fall Time
tf
¾
75
ns
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 2)
DC Current Gain
IC = -100µA, VCE =
IC = -1.0mA, VCE =
IC = -10mA, VCE =
IC = -50mA, VCE =
IC = -100mA, VCE =
-1.0V
-1.0V
-1.0V
-1.0V
-1.0V
SMALL SIGNAL CHARACTERISTICS
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
SWITCHING CHARACTERISTICS
VCC = -3.0V, IC = -10mA,
VBE(off) = 0.5V, IB1 = -1.0mA
VCC = -3.0V, IC = -10mA,
IB1 = IB2 = -1.0mA
Ordering Information (Note 3)
Notes:
Device
Packaging
Shipping
MMBT3906 -7
SOT-23
3000/Tape & Reel
2. Short duration test pulse used to minimize self-heating effect.
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
K3N
YM
Marking Information
K3N = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
Date Code Key
Year
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
Code
J
K
L
M
N
P
R
S
T
U
V
W
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
DS30059 Rev. 7 - 2
2 of 3
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MMBT3906
100
f = 1MHz
CIBO, INPUT CAPACITANCE (pF)
COBO, OUTPUT CAPACITANCE (pF)
PD, POWER DISSIPATION (mW)
350
300
250
200
150
100
10
Cibo
50
Cobo
1
0.1
0
0
25
50
75
100
125
150
200
175
100
10
VCB, COLLECTOR-BASE VOLTAGE (V)
Fig. 2, Input and Output Capacitance vs.
Collector-Base Voltage
TA, AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs
Ambient Temperature
10
VCE(SAT), COLLECTOR-EMITTER (V)
SATURATION VOLTAGE
1000
hFE, DC CURRENT GAIN
1
TA = 125°C
100
TA = +25°C
TA = -25°C
10
IC
IB = 10
1
0.1
VCE = 1.0V
0.01
1
1
0.1
10
100
1
1000
IC, COLLECTOR CURRENT (mA)
Fig. 3, Typical DC Current Gain vs
Collector Current
10
100
1000
IC, COLLECTOR CURRENT (mA)
Fig. 4, Typical Collector-Emitter Saturation Voltage
vs. Collector Current
VBE(SAT), BASE-EMITTER (V)
SATURATION VOLTAGE
1.0
0.9
0.8
0.7
0.6
IC
IB = 10
0.5
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 5, Typical Base-Emitter
Saturation Voltage vs. Collector Current
DS30059 Rev. 7 - 2
3 of 3
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MMBT3906
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