2SK1636(L), 2SK1636(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline LDPAK 4 4 1 2 1 2 3 3 D G S 1. Gate 2. Drain 3. Source 4. Drain 2SK1636(L), 2SK1636(S) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 250 V Gate to source voltage VGSS ±30 V Drain current ID 15 A 60 A 15 A Drain peak current I D(pulse)* Body to drain diode reverse drain current I DR 2 1 Channel dissipation Pch* 75 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C 2 2SK1636(L), 2SK1636(S) Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V(BR)DSS 250 — — V I D = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±30 — — V I G = ±100 µA, VDS = 0 Gate to source leak current I GSS — — ±10 µA VGS = ±25 V, VDS = 0 Zero gate voltage drain current I DSS — — 250 µA VDS = 200 V, VGS = 0 Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V I D = 1 mA, VDS = 10 V Static Drain to source on state resistance RDS(on) — 0.22 0.27 Ω I D = 8 A, VGS = 10 V *1 Forward transfer admittance |yfs| 6.0 10.0 — S I D = 8 A, VDS = 10 V *1 Input capacitance Ciss — 1250 — pF VDS = 10 V, VGS = 0, Output capacitance Coss — 510 — pF f = 1 MHz Reverse transfer capacitance Crss — 85 — pF Turn-on delay time t d(on) — 24 — ns I D = 8 A, VGS = 10 V, Rise time tr — 85 — ns RL = 3.75 Ω Turn-off delay time t d(off) — 110 — ns Fall time tf — 60 — ns Body to drain diode forward voltage VDF — 1.0 — V I F = 15 A, VGS = 0 Body to drain diode reverse recovery time t rr — 400 — ns I F = 15 A, VGS = 0, diF/dt = 100 A/µs Note 1. Pulse test 3 2SK1636(L), 2SK1636(S) Power vs. Temperature Derating Maximum Safe Operation Area 100 ar n) (o O is per lim at ite ion d in by th R is DS s s (1 n io ) ot Sh t ra = (T C 1 ) °C 25 Drain Current ID (A) m m pe O 3 µs 10 C Channel Dissipation Pch (W) 1 = 10 D 40 0 PW 80 10 µs 30 10 ea 120 0.3 Ta = 25°C 0.1 0 50 100 Case Temperature TC (°C) 150 1 Typical Transfer Characteristics Typical Transfer Characteristics Drain Current ID (A) 16 12 10 V 8V 5.5 V VDS = 10 V Pulse Test Pulse Test 5V 8 4.5 V 4 20 4V 16 Drain Current ID (A) 20 3 10 30 100 300 1,000 Drain to Source Voltage VDS (V) 12 8 4 Ta = 75°C 25°C –25°C VGS = 3.5 V 0 4 4 12 16 8 20 Drain to Source Voltage VDS (V) 0 2 6 8 4 10 Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 10 Static Drain to Source on State Resistance RDS (on) (Ω) Drain to Source Saturation Voltage VDS (on) (V) 2SK1636(L), 2SK1636(S) Pulse Test 8 6 4 ID = 15 A 10 A 2 0 5A 5 Pulse Test 2 1 VGS = 10 V 0.5 15 V 0.2 0.1 0.05 1 2 6 8 4 10 Gate to Source Voltage VGS (V) 1.0 Pulse Test VGS = 10 V 0.8 0.6 ID = 15 A 10 A 0.4 5A 0.2 0 –40 0 80 120 40 Case Temperature TC (°C) 5 10 20 Drain Current ID (A) 50 100 Forward Transfer Admittance vs. Drain Current 160 Forward Transfer Admittance yfs (S) Static Drain to Source on State Resistance RDS (on) (Ω) Static Drain to Source on State Resistance vs. Temperature 2 50 VDS = 10 V Pulse Test 20 TC = –25°C 10 25°C 75°C 5 2 1 0.5 0.5 1 2 5 10 20 Drain Current ID (A) 50 5 2SK1636(L), 2SK1636(S) Typical Capacitance vs. Drain to Source Voltage Body to Drain Diode Reverse Recovery Time 10,000 VGS = 0 f = 1 MHz 500 Capacitance C (pF) Reverse Recovery Time trr (ns) 1,000 200 100 50 Ciss 1,000 Coss 100 Crss di/dt = 100 A/µs, Ta = 25°C VGS = 0 20 10 10 0.5 0 50 1 2 5 10 20 Reverse Drain Current IDR (A) Dynamic Input Characteristics VGS 100 ID = 15 A 12 VDS 8 4 VDD = 200 V 100 V 50 V 0 0 6 20 60 80 40 Gate Charge Qg (nc) 100 Switching Time t (ns) 200 16 500 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) VDD = 50 V 100 V 200 V 300 50 Switching Characteristics 20 500 400 20 10 30 40 Drain to Source Voltage VDS (V) 200 td (off) 100 tf 50 tr td (on) 20 VGS = 10 V, PW = 2 µs duty < 1% 10 5 0.2 0.5 1 2 5 Drain Current ID (A) 10 20 2SK1636(L), 2SK1636(S) Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A) 20 Pulse Test 16 12 8 4 VGS = 10 V Normalized Transient Thermal Impedance γS (t) 0 VGS = 0, –5 V 0.8 2.0 0.4 1.2 1.6 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25°C D=1 1.0 0.5 0.3 0.2 θch–c (t) = γS (t) · θch–c θch–c = 1.67°C/W, TC = 25°C 0.1 0.1 0.05 0.02 0.03 0.01 PDM e uls ot P h 1S 0.01 10 µ T 100 µ 1m 10 m Pulse Width PW (s) PW 100 m Switching Time Test Circuit D = PW T 1 10 Waveforms Vin Monitor 90% Vout Monitor D.U.T Vin 10% RL Vout 10% 10% 50 Ω Vin 10 V VDD . =. 30 V td (on) 90% tr 90% td (off) tf 7 Unit: mm 2.54 ± 0.5 (1.4) 2.54 ± 0.5 11.3 ± 0.5 10.0 1.27 ± 0.2 0.2 0.86 +– 0.1 0.76 ± 0.1 11.0 ± 0.5 1.2 ± 0.2 1.3 ± 0.2 + 0.3 – 0.5 8.6 ± 0.3 10.2 ± 0.3 4.44 ± 0.2 2.59 ± 0.2 0.4 ± 0.1 Hitachi Code JEDEC EIAJ Weight (reference value) LDPAK (L) — — 1.4 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. 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