BB402M Build in Biasing Circuit MOS FET IC VHF RF Amplifier ADE-208-716A (Z) 2nd. Edition Dec. 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 1.7 dB typ. at f = 200 MHz) • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 240V at C=200pF, Rs=0 conditions. • Provide mini mold packages; MPAK-4R(SOT-143 var.) Outline MPAK-4R 3 4 2 1 1. Source 2. Drain 3. Gate2 4. Gate1 Notes: 1. Marking is “BX–”. 2. BB402M is individual type number of HITACHI BBFET. BB402M Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDS 12 V Gate1 to source voltage VG1S +10 –0 V Gate2 to source voltage VG2S ±10 V Drain current ID 25 mA Channel power dissipation Pch 150 mW Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 12 — — V I D = 200µA, VG1S = VG2S = 0 Gate1 to source breakdown voltage V(BR)G1SS +10 — — V I G1 = +10µA, VG2S = VDS = 0 Gate2 to source breakdown voltage V(BR)G2SS ±10 — — V I G2 = ±10µA, VG1S = VDS = 0 Gate1 to source cutoff current I G1SS — — +100 nA VG1S = +9V, V G2S = VDS = 0 Gate2 to source cutoff current I G2SS — — ±100 nA VG2S = ±9V, VG1S = VDS = 0 Gate1 to source cutoff voltage VG1S(off) 0.4 0.7 1.0 V VDS = 9V, VG2S = 6V, ID = 100µA Gate2 to source cutoff voltage VG2S(off) 0.4 0.7 1.0 V VDS = 9V, VG1S = 9V, ID = 100µA Drain current I D(op) 9 13 18 mA VDS = 9V, VG1 = 9V, VG2S = 6V RG = 120kΩ Forward transfer admittance |yfs| 15 20 — mS VDS = 9V, VG1 = 9V, VG2S =6V RG = 120kΩ, f = 1kHz Input capacitance c iss 2.2 3.0 4.0 pF VDS = 9V, VG1 = 9V Output capacitance c oss 0.8 1.1 1.5 pF VG2S =6V, RG = 120kΩ Reverse transfer capacitance c rss — 0.017 0.04 pF f = 1MHz Power gain PG 22 26 — dB VDS = 9V, VG1 = 9V, VG2S =6V Noise figure NF — 1.7 2.2 dB RG = 120kΩ, f = 200MHz 2 Symbol BB402M Main Characteristics Test Circuit for Operating Items (I D(op) , |yfs|, Ciss, Coss, Crss, NF, PG) VG1 VG2 RG Gate 1 Gate 2 Source A Drain ID Power Gain, Noise Figure Test Circuit 1000p 1000p 47k VT VG2 VT 1000p 47k 1000p 47k BBFET Output (50Ω) 1000p L2 Input (50Ω) L1 10p max 1000p 1000p 36p 1SV70 RG RFC 120k 1SV70 1000p V D = V G1 Unit Resistance (Ω) Capacitance (F) L1: φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns L2: φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns RFC: φ1mm Enameled Copper Wire,Inside dia 5mm, 2Turns 3 BB402M 25 150 100 50 V G2S = 6 V V G1 = VDS 20 15 10 5 R 0 50 100 Ambient Temperature 150 0 200 Ta (¡C) Drain Current vs. Gate2 to Source Voltage 25 100 k Ω 15 120 k Ω 150 k Ω 180 k Ω 200 k Ω 10 5 R G = 220 k Ω I D (mA) 82 k Ω 8 10 V DS (V) Drain Current vs. Gate1 Voltage Drain Current kΩ 20 2 4 6 Drain to Source Voltage kΩ 0 0 1 kΩ 0 2 1 kΩ 0 15 k Ω 8 1 0kΩ 220 kΩ 270 = G 20 68 k Ω 56 I D (mA) Drain Current Typical Output Characteristics 56 k 68 Ω k 82 Ω k Ω I D (mA) 200 Drain Current Channel Power Dissipation Pch (mW) Maximum Channel Power Dissipation Curve V DS = 9 V R G = 100 k Ω 6V 5V 4V 16 12 3V 2V 8 4 V G2S = 1 V V DS = V G1 = 9 V 0 4 1.2 2.4 3.8 Gate2 to Source Voltage 4.8 6.0 VG2S (V) 0 2 4 Gate1 Voltage 6 8 V G1 (V) 10 BB402M Drain Current vs. Gate1 Voltege Drain Current vs. Gate1 Voltege I D (mA) 6V 5V 4V 12 3V 8 2V 4 0 Forward Transfer Admittance |y fs | (mS) V DS = 9 V R G = 120 k Ω V G2S = 1 V 2 4 6 8 Gate1 Voltage V G1 (V) 25 V DS = 9 V R G = 100 k Ω 20 f = 1 kHz 6V 5V 4V 3V 15 10 2V V G2S = 1 V 0 2 4 6 8 Gate1 Voltage V G1 (V) 10 V DS = 9 V R G = 150 k Ω 16 6V 5V 4V 12 8 3V 2V 4 0 10 Forward Transfer Admittance vs. Gate1 Voltage 5 Drain Current 16 20 Forward Transfer Admittance |y fs | (mS) Drain Current I D (mA) 20 V G2S = 1 V 2 4 6 8 Gate1 Voltage V G1 (V) 10 Forward Transfer Admittance vs. Gate1 Voltage 25 V DS = 9 V R G = 120 k Ω 20 f = 1 kHz 6V 5V 4V 3V 15 10 2V 5 V G2S = 1 V 0 2 4 6 8 Gate1 Voltage V G1 (V) 10 5 Forward Transfer Admittance vs. Gate1 Voltage Power Gain vs. Gate Resistance 30 25 20 V DS = 9 V R G = 150 k Ω f = 1 kHz 6V 5V 4V 25 Power Gain PG (dB) Forward Transfer Admittance |y fs | (mS) BB402M 3V 15 2V 10 5 15 10 5 V G2S = 1 V 0 20 2 4 6 8 Gate1 Voltage V G1 (V) 0 10 10 Noise Figure vs. Gate Resistance V DS = 9 V V G1 = 9 V V G2S = 6 V f = 200 MHz 500 1000 25 Power Gain PG (dB) Noise Figure NF (dB) 100 200 Power Gain vs. Drain Current 1 20 15 10 5 20 50 100 200 500 1000 Gate Resistance R G (k Ω ) 6 50 30 2 0 10 20 Gate Resistance R G (k Ω ) 4 3 V DS = 9 V V G1 = 9 V V G2S = 6 V f = 200 MHz 0 V DS = 9 V V G1 = 9 V V G2S = 6 V R G = variable f = 200 MHz 5 10 15 20 25 Drain Current I D (mA) 30 BB402M Noise Figure vs. Drain Current Drain Current vs. Gate Resistance 30 V DS = 9 V V G1 = 9 V V G2S = 6 V R G = variable f = 200 MHz 3 Drain Current I D (mA) Noise Figure NF (dB) 4 2 1 0 5 10 15 20 25 15 10 5 V DS = 9 V V G1 = 9 V V G2S = 6 V 20 50 100 200 500 1000 Drain Current I D (mA) Gate Resistance R G (k Ω ) Gain Reduction vs. Gate2 to Source Voltage Input Capacitance vs. Gate2 to Source Voltage 6 V DS = 9 V V G1 = 9 V V G2S = 6 V R G = 120 k Ω f = 200 MHz 50 40 Input Capacitance Ciss (pF) Gain Reduction GR (dB) 20 0 10 30 60 30 20 10 0 25 5 4 3 2 V DS = 9 V V G1 = 9 V R G = 120 k Ω f = 1 MHz 1 0 1 2 3 4 5 6 7 Gate2 to Source Voltage V G2S (V) 1 2 3 4 5 6 Gate2 to Source Voltage V G2S (V) 7 BB402M S11 Parameter vs. Frequency S21 Parameter vs. Frequency 1 90¡ .8 .6 1.5 Scale: 1 / div. 60¡ 120¡ 2 .4 3 30¡ 150¡ 4 5 .2 10 .2 0 .4 .6 .8 1 1.5 2 3 45 10 180¡ 0¡ —10 —5 —4 —.2 —3 —.4 —30¡ —150¡ —2 —.6 —.8 —1 —90¡ Test Condition : V DS = 9 V , V G1 = 9 V V G2S = 6 V , R G = 120 k Ω 50 1000 MHz (50 MHz step) Test Condition : V DS = 9 V , V G1 = 9 V V G2S = 6 V , R G = 120 k Ω 50 1000 MHz (50 MHz step) S12 Parameter vs. Frequency 90¡ S22 Parameter vs. Frequency Scale: 0.01 / div. .8 60¡ 120¡ —60¡ —120¡ —1.5 1 .6 1.5 2 .4 3 30¡ 150¡ 4 5 .2 10 180¡ 0¡ .2 0 .4 .6 .8 1 1.5 2 3 45 10 —10 —5 —4 —.2 —30¡ —150¡ —3 —.4 —60¡ —120¡ —90¡ Test Condition : V DS = 9 V , V G1 = 9 V V G2S = 6 V , R G = 120 k Ω 50 1000 MHz (50 MHz step) 8 —2 —.6 —.8 —1 —1.5 Test Condition : V DS = 9 V , V G1 = 9 V V G2S = 6 V , R G = 120 k Ω 50 1000 MHz (50 MHz step) BB402M Sparameter (VDS = VG1 = 9V, VG2S = 6V, RG = 120kΩ, Zo = 50Ω) S11 S21 S12 S22 f (MHz) MAG ANG MAG ANG MAG ANG MAG ANG 50 0.988 –5.2 2.13 174.1 0.00052 90.0 0.985 –1.3 100 0.986 –10.4 2.13 167.9 0.00087 72.5 0.993 –3.6 150 0.979 –16.0 2.12 161.6 0.00156 79.4 0.992 –5.5 200 0.964 –21.5 2.08 155.2 0.00226 78.4 0.990 –7.5 250 0.948 –26.9 2.04 149.1 0.00254 71.0 0.987 –9.6 300 0.939 –32.0 2.00 143.0 0.00339 72.0 0.985 –11.4 350 0.920 –37.3 1.95 137.3 0.00335 59.0 0.982 –13.3 400 0.904 –42.3 1.91 131.5 0.00338 66.3 0.978 –15.3 450 0.885 –47.1 1.86 125.7 0.00351 62.2 0.974 –17.1 500 0.864 –51.7 1.81 120.1 0.00347 56.6 0.970 –18.9 550 0.848 –56.5 1.76 115.1 0.00355 61.5 0.966 –21.0 600 0.826 –60.9 1.70 110.1 0.00300 61.4 0.961 –22.7 650 0.808 –65.0 1.66 104.7 0.00289 51.1 0.957 –24.5 700 0.789 –69.4 1.61 100.3 0.00246 57.6 0.952 –26.6 750 0.773 –73.7 1.56 95.4 0.00211 70.0 0.947 –28.3 800 0.755 –77.9 1.51 90.5 0.00166 77.5 0.943 –30.2 850 0.735 –82.1 1.47 85.9 0.00165 114.5 0.937 –32.2 900 0.721 –86.3 1.42 81.3 0.00123 114.5 0.933 –34.1 950 0.703 –90.7 1.39 76.9 0.00176 145.8 0.927 –35.9 1000 0.677 –93.9 1.34 72.4 0.00204 164.0 0.923 –37.9 9 BB402M Package Dimensions Unit: mm 1.9 ±0.2 0.95 0.95 + 0.1 + 0.1 0.65 ± 0.1 2.95 ±0.2 + 0.1 0.16 — 0.06 0.4 — 0.05 0.4 — 0.05 4 2.8 ± 0.2 1.5 ± 0.15 3 0 0.1 + 0.1 0.4 — 0.05 0.85 0.95 0.65 ± 0.1 2 1 + 0.1 0.6 — 0.05 1.1± 0.1 0.8 1.8 10 Hitachi Code EIAJ JEDEC MPAK—4R BB402M Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 2000 Sierra Point Parkway Brisbane, CA 94005-1897 Tel: <1> (800) 285-1601 Fax: <1> (303) 297-0447 Hitachi Europe GmbH Electronic components Group Dornacher Straße 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan. 11