BB405M Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier ADE-208-718A (Z) 2nd. Edition Dec. 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Superior cross modulation characteristics. • High gain; (PG = 28 dB typ. at f = 200 MHz) • Wide supply voltage range; Applicable with 5V to 9V supply voltage. • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mini mold packages; MPAK-4R(SOT-143 var.) Outline MPAK-4R 3 4 2 1 1. Source 2. Drain 3. Gate2 4. Gate1 Notes: 1. Marking is “EX–”. 2. BB405M is individual type number of HITACHI BBFET. BB405M Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDS 12 V Gate1 to source voltage VG1S +10 –0 V Gate2 to source voltage VG2S ±10 V Drain current ID 25 mA Channel power dissipation Pch 150 mW Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 12 — — V I D = 200µA, VG1S = VG2S = 0 Gate1 to source breakdown voltage V(BR)G1SS +10 — — V I G1 = +10µA, VG2S = VDS = 0 Gate2 to source breakdown voltage V(BR)G2SS ±10 — — V I G2 = ±10µA, VG1S = VDS = 0 Gate1 to source cutoff current I G1SS — — +100 nA VG1S = +9V, V G2S = VDS = 0 Gate2 to source cutoff current I G2SS — — ±100 nA VG2S = ±9V, VG1S = VDS = 0 Gate1 to source cutoff voltage VG1S(off) 0.4 0.7 1.0 V VDS = 5V, VG2S = 4V, ID = 100µA Gate2 to source cutoff voltage VG2S(off) 0.4 0.7 1.0 V VDS = 5V, VG1S = 5V, ID = 100µA Input capacitance c iss 2.3 2.8 3.5 pF VDS = 5V, VG1 = 5V Output capacitance c oss 1.1 1.5 1.9 pF VG2S =4V, RG = 82kΩ Reverse transfer capacitance c rss — 0.017 0.04 pF f = 1MHz Drain current I D(op) 1 10 15 20 mA VDS = 5V, VG1 = 5V VG2S = 4V, RG = 82kΩ I D(op) 2 — 13 — mA VDS = 9V, VG1 = 9V VG2S =6V, RG = 220kΩ |yfs|1 23 28 — mS VDS = 5V, VG1 = 5V, VG2S =4V RG =82kΩ, f = 1kHz |yfs|2 — 28 — mS VDS = 9V, VG1 = 9V, VG2S =6V RG = 220kΩ, f = 1kHz PG1 24 28 — dB VDS = 5V, VG1 = 5V, VG2S =4V RG = 82kΩ, f = 200MHz PG2 — 28 — dB VDS = 9V, VG1 = 9V, VG2S =6V RG = 220kΩ, f = 200MHz NF1 — 1.4 1.9 dB VDS = 5V, VG1 = 5V, VG2S =4V RG = 82kΩ, f = 200MHz NF2 — 1.4 — dB VDS = 9V, VG1 = 9V, VG2S =6V RG = 220kΩ, f = 200MHz Forward transfer admittance Power gain Noise figure 2 BB405M Main Characteristics Test Circuit for Operating Items (I D(op) , |yfs|, Ciss, Coss, Crss, NF, PG) VG1 VG2 RG Gate 1 Gate 2 Source Drain A ID Power Gain, Noise Figure Test Circuit 1000p 1000p 47k VT VG2 VT 1000p 47k 1000p 47k BBFET Output(50Ω) 1000p L2 Input(50Ω) L1 10p max 1000p 1000p 36p 1SV70 RG RFC 82k (VD=5V) 220k (VD=9V) 1SV70 1000p V D = V G1 Unit Resistance (Ω) Capacitance (F) L1 : φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns L2 : φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns RFC : φ1mm Enameled Copper Wire,Inside dia 5mm, 2Turns . 3 BB405M Drain Current vs. Gate1 Voltege Drain Current vs. Gate1 Voltege Forward Transfer Admittance |y fs | (mS) I D (mA) 12 4V 3V 8 2V 4 0 V G2S = 1 V 1 2 3 4 Gate1 Voltage VG1 (V) 16 4V 8 1 2 3 4 Gate1 Voltage VG1 (V) 5 Forward Transfer Admittance vs. Gate1 Voltage 4V 2V 12 6 V G2S = 1 V 1 2 3 4 Gate1 Voltage VG1 (V) 2V 4 0 5 3V 18 3V V G2S = 1 V 30 V DS = 5 V R G = 68 k Ω 24 f = 1 kHz V DS = 5 V R G = 100 k Ω 12 Forward Transfer Admittance vs. Gate1 Voltage 0 4 V DS = 5 V R G = 82 k Ω Drain Current 16 20 Forward Transfer Admittance |y fs | (mS) Drain Current I D (mA) 20 5 30 V DS = 5 V R G = 82 k Ω 24 f = 1 kHz 4V 3V 18 2V 12 6 V G2S = 1 V 0 1 2 3 4 Gate1 Voltage VG1 (V) 5 BB405M Power Gain vs. Gate Resistance 40 30 24 V DS = 5 V R G = 100 k Ω f = 1 kHz 35 4V Power Gain PG (dB) Forward Transfer Admittance |y fs | (mS) Forward Transfer Admittance vs. Gate1 Voltage 3V 18 2V 12 6 25 20 15 V G2S = 1 V 0 30 1 2 3 4 Gate1 Voltage VG1 (V) 10 10 5 Noise Figure vs. Gate Resistance 40 V DS = 5 V V G1 = 5 V V G2S = 4 V f = 200 MHz 2 1 35 Power Gain PG (dB) Noise Figure NF (dB) 20 50 100 200 500 1000 Gate Resistance R G (k Ω ) Power Gain vs. Drain Current 4 3 V DS = 5 V V G1 = 5 V V G2S = 4 V f = 200 MHz 30 25 V DS = 5 V V G1 = 5 V V G2S = 4 V R G = variable f = 200 MHz 20 15 0 10 20 50 100 200 500 1000 Gate Resistance R G (k Ω ) 10 0 5 10 15 Drain Current ID 20 25 30 (mA) 5 BB405M Noise Figure vs. Drain Current Drain Current vs. Gate Resistance 30 3 (mA) V DS = 5 V V G1 = 5 V V G2S = 4 V R G = variable f = 200 MHz Drain Current ID Noise Figure NF (dB) 4 2 1 25 20 15 10 5 0 5 10 15 20 Drain Current ID 25 0 10 30 Input Capacitance Ciss (pF) Gain Reduction GR (dB) 20 10 1 2 3 4 Gate2 to Source Voltage VG2S (V) 6 100 200 500 1000 6 V DS = 5 V V G1 = 5 V V G2S = 4 V R G = 82 k Ω f = 200 MHz 30 0 50 Input Capacitance vs. Gate2 to Source Voltage 60 40 20 Gate Resistance R G (k Ω) (mA) Gain Reduction vs. Gate2 to Source Voltage 50 V DS = 5 V V G1 = 5 V V G2S = 4 V 5 5 4 3 2 V DS = 5 V V G1 = 5 V R G = 82 k Ω f = 1 MHz 1 0 0 1 2 3 4 Gate2 to Source Voltage VG2S (V) 5 BB405M S21 Parameter vs. Frequency S11 Parameter vs. Frequency .8 1 .6 90° 1.5 Scale: 1 / div. 60° 120° 2 .4 3 30° 150° 4 5 .2 10 .2 0 .4 .6 .8 1 1.5 2 3 45 10 180° 0° –10 –5 –4 –.2 –3 –.4 –30° –150° –2 –.6 –.8 –1 –60° –120° –1.5 –90° Test Condition : V DS = 5 V , V G1 = 5 V V G2S = 4 V , R G = 82 k Ω 50 to 1000 MHz (50 MHz step) Test Condition : V DS = 5 V , V G1 = 5 V V G2S = 4 V , R G = 82 k Ω 50 to 1000 MHz (50 MHz step) S12 Parameter vs. Frequency S22 Parameter vs. Frequency 90° Scale: 0.002 / div. .8 60° 120° 1 .6 1.5 2 .4 3 30° 150° 4 5 .2 10 180° 0° .2 0 .4 .6 .8 1 1.5 2 3 45 10 –10 –5 –4 –.2 –30° –150° –3 –.4 –60° –120° –90° Test Condition : V DS = 5 V , V G1 = 5 V V G2S = 4 V , R G = 82 k Ω 50 to 1000 MHz (50 MHz step) –2 –.6 –.8 –1 –1.5 Test Condition : V DS = 5 V , V G1 = 5 V V G2S = 4 V , R G = 82 k Ω 50 to 1000 MHz (50 MHz step) 7 BB405M Sparameter (VDS = VG1 = 5V, VG2S = 4V, RG = 82kΩ, Zo = 50Ω) S11 S21 S12 S22 f (MHz) MAG ANG MAG ANG MAG ANG MAG ANG 50 0.991 –4.8 2.69 174.9 0.00090 91.4 0.991 –2.2 100 0.991 –9.9 2.68 169.3 0.00153 90.5 0.992 –4.8 150 0.982 –15.4 2.66 163.4 0.00243 73.8 0.991 –7.5 200 0.975 –20.7 2.62 157.5 0.00293 74.9 0.989 –9.9 250 0.972 –25.6 2.60 152.0 0.00370 70.1 0.985 –12.6 300 0.956 –30.6 2.54 146.3 0.00444 69.0 0.981 –15.0 350 0.942 –35.5 2.47 140.9 0.00478 63.7 0.977 –17.3 400 0.928 –40.1 2.42 135.7 0.00535 64.8 0.973 –19.7 450 0.920 –44.9 2.38 130.5 0.00551 56.8 0.967 –22.0 500 0.906 –49.2 2.32 125.7 0.00549 58.6 0.962 –24.5 550 0.894 –53.6 2.25 120.8 0.00584 54.4 0.957 –26.9 600 0.880 –57.8 2.18 116.2 0.00542 53.3 0.952 –29.2 650 0.868 –62.1 2.12 111.5 0.00562 49.5 0.944 –31.5 700 0.854 –66.2 2.06 106.8 0.00509 48.6 0.939 –33.8 750 0.842 –70.3 2.00 102.5 0.00465 49.7 0.933 –36.1 800 0.835 –73.9 1.94 98.4 0.00427 51.6 0.927 –38.3 850 0.820 –77.7 1.89 94.0 0.00416 53.3 0.921 –40.5 900 0.802 –81.5 1.83 89.6 0.00289 57.9 0.915 –42.7 950 0.801 –84.7 1.78 85.6 0.00288 72.9 0.909 –44.9 1000 0.789 –87.9 1.73 82.1 0.00241 78.9 0.904 –47.1 8 BB405M Package Dimensions Unit: mm 1.9 ±0.2 0.95 0.95 + 0.1 + 0.1 0.4 – 0.05 0.4 – 0.05 4 0.65 ± 0.1 2.95 ±0.2 + 0.1 0.16 – 0.06 2.8 ± 0.2 1.5 ± 0.15 3 0 ~ 0.1 + 0.1 0.4 – 0.05 0.85 0.95 0.65 ± 0.1 2 1 + 0.1 0.6 – 0.05 1.1 ± 0.1 0.8 1.8 Hitachi Code EIAJ JEDEC MPAK–4R — — 9 BB405M Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 2000 Sierra Point Parkway Brisbane, CA 94005-1897 Tel: <1> (800) 285-1601 Fax: <1> (303) 297-0447 Hitachi Europe GmbH Electronic components Group Dornacher Straße 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan. 10