Comchip MMBT2907A General purpose transistor (pnp) Datasheet

General Purpose Transistor (PNP)
COMCHIP
www.comchiptech.com
MMBT2907A
Features
Epitaxial Planar Die Construction
Complementary NPN Type Available (MMBT2222A)
Ideal for Medium Power Amplification and Switching
TO-236AB (SOT-23)
.122 (3.1)
.110 (2.8)
Mechanical Data
.016 (0.4)
Case: SOT-23 Plastic Package
Weight: approx. 0.008g
Top View
.056 (1.43)
.052 (1.33)
3
1
.037(0.95) .037(0.95)
2
EMITTER
.016 (0.4)
.016 (0.4)
.007 (0.175)
.005 (0.125)
1
BASE
Pin Configuration
1 = Base 2 = Emitter
3 = Collector
2
max. .004 (0.1)
3
.045 (1.15)
.037 (0.95)
COLLECTOR
.102 (2.6)
.094 (2.4)
Dimensions in inches and (millimeters)
Maximum Ratings & Thermal Characteristics
Rating
Ratings at 25°C ambient temperature unless otherwise specified.
Symbol
2907
2907A
Unit
Collector – Emitter Voltage
VCEO
–40
–60
Vdc
Collector – Base Voltage
VCBO
–60
Vdc
Emitter – Base Voltage
VEBO
–5.0
Vdc
IC
–600
mAdc
Collector Current — Continuous
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
PD
225
mW
1.8
mW/°C
Thermal Resistance, Junction to Ambient
RqJA
556
°C/W
PD
300
mW
2.4
mW/°C
RqJA
417
°C/W
TJ, Tstg
– 55 to +150
°C
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
MDS030300B1
Page 1
General Purpose Transistor (PNP)
COMCHIP
www.comchiptech.com
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
–40
–60
—
—
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(3)
(IC = –10 mAdc, IB = 0)
V(BR)CEO
MMBT2907
MMBT2907A
Vdc
Collector – Base Breakdown Voltage (IC = –10 mAdc, IE = 0)
V(BR)CBO
–60
—
Vdc
Emitter – Base Breakdown Voltage (IE = –10 mAdc, IC = 0)
V(BR)EBO
–5.0
—
Vdc
Collector Cutoff Current (VCE = –30 Vdc, VBE(off) = –0.5 Vdc)
ICEX
—
–50
Collector Cutoff Current
(VCB = –50 Vdc, IE = 0)
ICBO
MMBT2907
MMBT2907A
—
—
–0.020
–0.010
MMBT2907
MMBT2907A
—
—
–20
–10
—
–50
MMBT2907
MMBT2907A
35
75
—
—
(IC = –1.0 mAdc, VCE = –10 Vdc)
MMBT2907
MMBT2907A
50
100
—
—
(IC = –10 mAdc, VCE = –10 Vdc)
MMBT2907
MMBT2907A
75
100
—
—
(IC = –150 mAdc, VCE = –10 Vdc) (3)
MMBT2907
MMBT2907A
—
100
—
300
(IC = –500 mAdc, VCE = –10 Vdc) (3)
MMBT2907
MMBT2907A
30
50
—
—
—
—
–0.4
–1.6
—
—
–1.3
–2.6
(VCB = –50 Vdc, IE = 0, TA = 125°C)
Base Current (VCE = –30 Vdc, VEB(off) = –0.5 Vdc)
IB
nAdc
µAdc
nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = –0.1 mAdc, VCE = –10 Vdc)
hFE
Collector – Emitter Saturation Voltage (3)
(IC = –150 mAdc, IB = –15 mAdc)
(IC = –500 mAdc, IB = –50 mAdc)
VCE(sat)
Base – Emitter Saturation Voltage (3)
(IC = –150 mAdc, IB = –15 mAdc)
(IC = –500 mAdc, IB = –50 mAdc)
VBE(sat)
—
Vdc
Vdc
1.FR-5 = 1.0 X 0.75 X 0.062 in.
2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.
MDS030300B1
Page 2
General Purpose Transistor (PNP)
COMCHIP
www.comchiptech.com
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (3),(4)
(IC = –50 mAdc, VCE = –20 Vdc, f = 100 MHz)
fT
MHz
200
—
—
8.0
—
30
ton
—
45
td
—
10
Output Capacitance
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
Input Capacitance
(VEB = –2.0 Vdc, IC = 0, f = 1.0 MHz)
Cibo
pF
pF
SWITCHING CHARACTERISTICS
Turn–On Time
(VCC = –30 Vdc, IC = –150 mAdc,
IB1 = –15
15 mAdc)
mAdc
Delay Time
Rise Time
Turn–Off Time
(VCC = –6.0 Vdc, IC = –150 mAdc,
IB1 = IB2 = –15
15 mAdc)
mAdc
Storage Time
Fall Time
v
v
tr
—
40
toff
—
100
ts
—
80
tf
—
30
ns
ns
3. Pulse Test: Pulse Width
300 ms, Duty Cycle
2.0%.
4. fT is defined as the frequency at which |hfe| extrapolates to unity.
INPUT
Zo = 50 Ω
PRF = 150 PPS
RISE TIME ≤ 2.0 ns
P.W. < 200 ns
200
1.0 k
0
TO OSCILLOSCOPE
RISE TIME ≤ 5.0 ns
50
–16 V
200 ns
Figure 1. Delay and Rise Time Test Circuit
MDS030300B1
INPUT
Zo = 50 Ω
PRF = 150 PPS
RISE TIME ≤ 2.0 ns
P.W. < 200 ns
–30 V
+15 V
–6.0 V
1.0 k
1.0 k
0
–30 V
50
37
TO OSCILLOSCOPE
RISE TIME ≤ 5.0 ns
1N916
200 ns
Figure 2. Storage and Fall Time Test Circuit
Page 3
General Purpose Transistor (PNP)
COMCHIP
www.comchiptech.com
TYPICAL CHARACTERISTICS
3.0
VCE = –1.0 V
VCE = –10 V
hFE , Normalized Current Gain
2.0
TJ = 125°C
25°C
1.0
– 55°C
0.7
0.5
0.3
0.2
–0.1
–0.2 –0.3
–0.5 –0.7 –1.0
–2.0
–3.0
–5.0 –7.0
–10
–20
–30
–50 –70 –100
–200 –300
–500
I C, Collector Current (mA)
Figure 3. DC Current Gain
VCE , Collector–Emitter Voltage (V)
–1.0
–0.8
IC = –1.0 mA
–10 mA
–100 mA
–500 mA
–0.6
–0.4
–0.2
0
–0.005
–0.01
–0.02 –0.03 –0.05 –0.07 –0.1
–0.2
–0.3 –0.5 –0.7 –1.0
I B, Base Current (mA)
–3.0
–2.0
–5.0 –7.0 –10
–20 –30
–50
Figure 4. Collector Saturation Region
500
tr
100
70
50
300
VCC = –30 V
IC/IB = 10
TJ = 25°C
30
20
td @ VBE(off) = 0 V
tf
3.0
–5.0 –7.0 –10
2.0 V
–20 –30
–50 –70 –100
IC, Collector Current
Figure 5. Turn–On Time
MDS030300B1
MDS030300
100
70
50
30
t′s = ts – 1/8 tf
20
10
7.0
5.0
VCC = –30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
200
t, Time (ns)
t, Time (ns)
300
200
–200 –300 –500
10
7.0
5.0
–5.0 –7.0 –10
–20 –30
–50 –70 –100
I C, Collector Current (mA)
–200 –300 –500
Figure 6. Turn–Off Time
Page 4
General Purpose Transistor (PNP)
COMCHIP
www.comchiptech.com
TYPICAL SMALL– SIGNAL CHARACTERISTICS
NOISE FIGURE
VCE = 10 Vdc, TA = 25°C
10
10
8.0
8.0
NF, Noise Figure (dB)
NF, Noise Figure (dB)
f = 1.0 kHz
IC = –1.0 mA, Rs = 430 Ω
–500 µA, Rs = 560 Ω
–50 µA, Rs = 2.7 kΩ
–100 µA, Rs = 1.6 kΩ
6.0
4.0
Rs = OPTIMUM SOURCE RESISTANCE
2.0
0
0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10
20
50
0
100
50
100
200
500 1.0 k 2.0 k
5.0 k 10 k
20 k
R s, Source Resistance (OHMS)
Figure 7. Frequency Effects
Figure 8. Source Resistance Effects
50 k
400
Ceb
10
7.0
5.0
Ccb
3.0
–0.2 –0.3 –0.5
–1.0
–2.0 –3.0 –5.0
–10
f T, Current–Gain — Bandwidth Product (MHz)
C, Capacitance (pF)
4.0
f, Frequency (kHz)
20
–20 –30
300
200
100
80
VCE = –20 V
TJ = 25°C
60
40
30
20
–1.0 –2.0
–5.0
–10
–20
–50
–100 –200
–500 –1000
Reverse Voltage (VOLTS)
I C, Collector Current (mA)
Figure 9. Capacitances
Figure 10. Current–Gain — Bandwidth Product
+0.5
–1.0
TJ = 25°C
0
VBE(sat) @ IC/IB = 10
RqVC for VCE(sat)
Coefficient (mV/ ° C)
–0.8
VBE(on) @ VCE = –10 V
–0.6
V, Voltage (V)
IC = –50 µA
–100 µA
–500 µA
–1.0 mA
2.0
30
2.0
–0.1
6.0
–0.4
–0.2
–0.5
–1.0
–1.5
RqVB for VBE
–2.0
VCE(sat) @ IC/IB = 10
0
–0.1 –0.2
–0.5 –1.0 –2.0 –5.0 –10 –20
MDS030300B1
–50 –100 –200
–500
–2.5
–0.1 –0.2 –0.5 –1.0 –2.0
–5.0 –10 –20
–50 –100 –200 –500
I C, Collector Current (mA)
I C, Collector Current (mA)
Figure 11. “On” Voltage
Figure 12. Temperature Coefficients
Page 5