HTSEMI DTA114EE Digital transistors (pnp) Datasheet

DTA114EE/DTA114EUA/DTA114EKA /DTA114ESA/DTA114ECA
Digital transistors (PNP)
FEATURES
1. Built-in bias resistors enable the configuration of an inverter circuit
without connecting external input resistors(see equivalent circuit).
The bias resistors consist of thin-film resistors with complete isolation
to allow positive biasing of the input.They also have the advantage of
almost completely eliminating parasitic effects.
3. Only the on/off conditions need to be set for operation, making device
design easy.
2.
PIN CONNENCTIONS AND MARKING
DTA114EUA
DTA114EE
SOT-523
Addreviated symbol: 14
DTA114EKA
SOT-323
Addreviated symbol: 14
DTA114ECA
SOT-23-3L
Addreviated symbol: 14
SOT-23
Addreviated symbol: 14
DTA114ESA
TO-92S
1
JinYu
semiconductor
www.htsemi.com
Date:2011/05
DTA114EE/DTA114EUA/DTA114EKA /DTA114ESA/ DTA114ECA
Absolute maximum ratings(Ta=25℃)
Limits (DTA114E□)
Parameter
Symbol
Supply voltage
VCC
-50
V
Input voltage
VIN
-40~10
V
IO
-50
IC(MAX)
-100
Output current
E
UA
CA
150
KA
SA
Unit
mA
Power dissipation
Pd
200
300
mW
Junction temperature
Tj
150
℃
Storage temperature
Tstg
-55~150
℃
Electrical characteristics (Ta=25℃)
Parameter
Input voltage
Symbol
Min.
Typ
VI(off)
VI(on)
Max.
-0.5
-3
Unit
V
Conditions
VCC=-5V ,IO=-100µA
VO=-0.3V ,IO=-10 mA
Output voltage
VO(on)
-0.3
V
IO/II=-10mA/-0.5mA
Input current
II
-0.88
mA
VI=-5V
Output current
IO(off)
-0.5
µA
VCC=-50V, VI=0
DC current gain
GI
30
Input resistance
R1
7
10
13
Resistance ratio
R2/R1
0.8
1
1.2
Transition frequency
fT
VO=-5V ,IO=-5mA
250
KΩ
MHz
VCE=-10V ,IE=5mA,f=100MHz
Typical Characteristics
2
JinYu
semiconductor
www.htsemi.com
Date:2011/05
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