Austin MT5C1009SOJ-55/883C 128k x 8 sram with chip & output enable Datasheet

SRAM
MT5C1009
Austin Semiconductor, Inc.
128K x 8 SRAM
PIN ASSIGNMENT
(Top View)
WITH CHIP & OUTPUT ENABLE
32-Pin DIP (C, CW)
32-Pin SOJ (SOJ)
AVAILABLE AS MILITARY
SPECIFICATIONS
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ1
DQ2
DQ3
VSS
•SMD 5962-89598
•MIL-STD-883
FEATURES
Access Times: 15, 20, 25, 35, 45, 55 and 70 ns
Battery Backup: 2V data retention
Low power standby
High-performance, low-power CMOS process
Single +5V (+10%) Power Supply
Easy memory expansion with CE\ and OE\ options.
All inputs and outputs are TTL compatible
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
VCC
A15
CE2
NC
WE\
A13
A8
A9
A11
OE\
A10
CE\
DQ8
DQ7
DQ6
DQ5
DQ4
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ1
DQ2
DQ3
VSS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
VCC
A15
CE2
NC
WE\
A13
A8
A9
A11
OE\
A10
CE\
DQ8
DQ7
DQ6
DQ5
DQ4
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
32-Pin LCC (ECA)
32-Pin Flat Pack (F)
NC
A12
A14
A10
6
NC
VCC
A15
CE2
•
•
•
•
•
•
•
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32-Pin LCC (EC)
32-Pin SOJ (DCJ)
4 3 2 1 32 31 30
• Timing
15ns access
20ns access
25ns access
35ns access
45ns access
55ns access
70ns access
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ1
DQ2
DQ3
VSS
MARKING
-15
-20
-25
-35
-45
-55*
-70*
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
VCC
A15
CE2
NC
WE\
A13
A8
A9
A11
OE\
A10
CE\
DQ8
DQ7
DQ6
DQ5
DQ4
A7
A6
A5
A4
A3
A2
A1
A0
DQ1
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
WE \
A13
A8
A9
A11
OE \
A10
CE1\
DQ8
14 15 16 17 18 19 20
DQ2
DQ3
VSS
DQ4
DQ5
DQ6
DQ7
OPTIONS
GENERAL DESCRIPTION
• Package(s)•
Ceramic DIP (400 mil)
Ceramic DIP (600 mil)
Ceramic LCC
Ceramic LCC
Ceramic Flatpack
Ceramic SOJ
Ceramic SOJ
C
CW
EC
ECA
F
DCJ
SOJ
• 2V data retention/low power
L
The MT5C1009 is a 1,048,576-bit high-speed CMOS
static RAM organized as 131,072 words by 8 bits. This device
uses 8 common input and output lines and has an output enable pin which operate faster than address access times during
READ cycle.
For design flexibility in high-speed memory
applications, this device offers chip enable (CE\) and output
enable (OE\) features. These enhancements can place the outputs in High-Z for additional flexibility in system design.
Writing to these devices is accomplished when write
enable (WE\) and CE\ inputs are both LOW. Reading is accomplished when WE\ remains HIGH and CE\ and OE\ go LOW.
The devices offer a reduced power standby mode when disabled, allowing system designs to achieve low standby power
requirements.
The “L” version offers a 2V data retention mode, reducing current consumption to 2mW maximum.
All devices operate from a single +5V power supply
and all inputs and outputs are fully TTL compatible. It is particularly well suited for use in high-density, high-speed system
applications.
No. 111
No. 112
No. 207
No. 208
No. 303
No. 501
No. 507
*Electrical characteristics identical to those provided for the 45ns
access devices.
For more products and information
please visit our web site at
www.austinsemiconductor.com
MT5C1009
Rev. 5.5 8/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
1
SRAM
MT5C1009
Austin Semiconductor, Inc.
FUNCTIONAL BLOCK DIAGRAM
VCC
I/O CONTROL
DQ8
ROW DECODER
A0
A1
A2
A3
A4
A5
A6
A7
A12
GND
262,144-BIT
MEMORY ARRAY
DQ1
CE\
COLUMN DECODER
OE\
WE\
A8 A9 A10 A11 A13 A14 A15 A16
POWER
DOWN
NOTE: The two least significant row address bits (A8 and A6) are encoded using gray code.
TRUTH TABLE
MT5C1009
Rev. 5.5 8/01
CE\
WE\
OE\
MODE
I/O PIN
SUPPLY CURRENT
H
X
X
Not Selected
High-Z
ISBT2, ISBC2
X
X
X
Not Selected
High-Z
ISBT2, ISBC2
L
H
H
Output Disable
High-Z
ICC
L
H
L
Read
DOUT
ICC
L
L
X
Write
DIN
ICC
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
2
SRAM
MT5C1009
Austin Semiconductor, Inc.
*Stresses at or greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated
in the operation section of this specification is not implied.
Exposure to absolute maximum rating conditions for extended
periods will affect reliability. Refer to page 17 of this
datasheet for a technical note on this subject.
** Junction temperature depends upon package type, cycle
time, loading, ambient temperature and airflow, and humidity.
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage Range (Vcc).............................-0.5V to +6.0V
Storage Temperature......................................-65°C to +150°C
Short Circuit Output Current (per I/O)….......................20mA
Voltage on any Pin Relative to Vss..................-0.5V to +7.0V
Max Junction Temperature**.......................................+150°C
Power Dissipation ...............................................................1 W
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS
(-55oC < TC < 125oC & -45oC to +85oC; VCC = 5.0V +10%)
DESCRIPTION
Input High (Logic 1) Voltage
CONDITIONS
SYM
VIH
MIN
2.2
VIL
Input Low (Logic 0) Voltage
MAX
VCC+0.5
UNITS
V
NOTES
1
-0.5
0.8
V
1, 2
0V<VIN<VCC
ILI
-10
10
µA
Output(s) disabled
0V<VOUT<VCC
ILO
-10
10
µA
Output High Voltage
IOH=-4.0mA
VOH
2.4
Output Low Voltage
IOL=8.0mA
VOL
Input Leakage Current
Output Leakage Current
V
1
-15
-20
MAX
-25
-35
-45
ICCSP
250
140
140
135
125
mA
ICCLP
250
140
130
125
115
mA
CE\ > VIH; All Other Inputs
< VIL or > VIH, VCC = MAX
f = 0 Hz
ISBT
25
25
25
25
25
mA
CE\ > VCC -0.2V; VCC = MAX
ISBCSP
10
10
10
10
10
mA
Inputs = VIH or VIL
f = 0 Hz
ISBCLP
10
10
10
10
10
mA
CONDITIONS
CE\ < VIL; OE\ = WE\ = VIH,
VCC = MAX, f = MAX = 1/tRC (MIN)
Output Open
(1)
L version only
Power Supply
Current: Standby
1
SYM
PARAMETER
Power Supply
Current: Operating
0.4
V
UNITS NOTES
3
CAPACITANCE
DESCRIPTION
Input Capacitance (A0-A16)
Output Capacitance
Input Capacitance (CE\, WE\, OE\)
MT5C1009
Rev. 5.5 8/01
CONDITIONS
SYM
o
TA = 25 C, f = 1MHz
VCC = 5V
CI
MAX
12
UNITS
pF
NOTES
4
CO
20
pF
4
CI
14
pF
4
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
3
SRAM
MT5C1009
Austin Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(Note 5) (-55oC < TC < 125oC & -40oC to +85oC; VCC = 5.0V +10%)
DESCRIPTION
READ CYCLE
READ cycle time
Address access time
Chip Enable access time
Output hold from address change
Chip Enable to output in Low-Z
Chip disable to output in High-Z
Output Enable access time
Output Enable to output in Low-Z
Output disable to output in High-Z
WRITE CYCLE
WRITE cycle time
Chip Enable to end of write
Address valid to end of write
Address setup time
Address hold from end of write
WRITE pulse width (OE High)
Data setup time
Data hold time
Write disable to output in Low-Z
Write Enable to output in High-Z
MT5C1009
Rev. 5.5 8/01
-15
-20
-25
-35
-45
SYMBOL MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS NOTES
tRC
tAA
tACE
tOH
tLZCE
tHZCE
tAOE
tLZOE
tHZOE
15
tWC
tCW
tAW
tAS
tAH
tWP
tDS
tDH
15
12
12
0
0
12
8
0
5
tLZWE
tHZWE
20
15
15
3
3
25
20
20
3
3
7
7
0
3
3
0
20
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
20
20
0
15
35
25
25
0
0
25
20
0
5
10
20
45
45
15
15
10
ns
ns
ns
ns
ns
ns
ns
ns
ns
3
3
0
25
20
20
0
0
20
15
0
5
9
35
35
10
10
6
45
3
3
0
20
12
12
0
0
12
10
0
5
7
25
25
8
6
7
35
45
35
35
0
0
35
20
0
5
15
4, 6, 7
4, 6, 7
4, 6, 7
4, 6, 7
4, 6, 7
4, 6, 7
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
4
SRAM
MT5C1009
Austin Semiconductor, Inc.
+5V
+5V
AC TEST CONDITIONS
480
Input pulse levels ................................... Vss to 3.0V
Input rise and fall times ....................................... 5ns
Input timing reference levels ............................. 1.5V
Output reference levels ..................................... 1.5V
Output load .............................. See Figures 1 and 2
Q
30
255
480
Q
Fig. 1 Output Load
Equivalent
4.
5.
6.
Fig. 2 Output Load
Equivalent
7.
At any given temperature and voltage condition,
t
HZCE is less than tLZCE, and tHZWE is less than
t
LZWE and tHZOE is less than tLZOE.
8. WE\ is HIGH for READ cycle.
9. Device is continuously selected. Chip enables and
output enables are held in their active state.
10. Address valid prior to, or coincident with, latest
occurring chip enable.
11. tRC = Read Cycle Time.
NOTES
1.
2.
3.
5 pF
255
All voltages referenced to VSS (GND).
-2V for pulse width < 20ns
ICC is dependent on output loading and cycle rates.
The specified value applies with the outputs
unloaded, and f =
1
Hz.
t
RC (MIN)
This parameter is guaranteed but not tested.
Test conditions as specified with the output loading
as shown in Fig. 1 unless otherwise noted.
t
LZCE, tLZWE, tLZOE, t HZCE, tHZOE and tHZWE
are specified with CL = 5pF as in Fig. 2. Transition is
measured ±200mV typical from steady state voltage,
allowing for actual tester RC time constant.
DATA RETENTION ELECTRICAL CHARACTERISTICS (L Version Only)
CONDITIONS
DESCRIPTION
VCC for Retention Data
CE\ > (VCC - 0.2V)
VIN > (VCC - 0.2V)
or < 0.2V
Data Retention Current
SYMBOL
MIN
MAX
UNITS NOTES
VDR
2
---
V
ICCDR1*
0.75
mA
ICCDR2
1.0
mA
---
ns
4
ns
4, 11
VCC = 2V
Chip Deselect to Data
Retention Time
Operation Recovery Time
tCDR
0
tR
tRC
* Low Power, -20 device only
LOW Vcc DATA RETENTION WAVEFORM
DATA RETENTION MODE
VCC
4.5V
VDR > 2V
tR
t CDR
CE1\
MT5C1009
Rev. 5.5 8/01
VIH
VIL
1234
123456789
123
123456789
123
1234
123456789
123
1234
123456789
123
1234
123456789
123
4.5V
VDR
12345678
1234
123
12345678
1234
123
12345678
1234
123
12345678
1234
123
12345678
123
123
123
123
123 DON’T CARE
1234
1234
1234
1234UNDEFINED
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
5
SRAM
MT5C1009
Austin Semiconductor, Inc.
READ CYCLE NO. 1 8, 9
tRC
tRC
ADDRESS
VALID
tAA
tAA
tOH
tOH
DQ
PREVIOUS DATA VALID
DATA VALID
READ CYCLE NO. 2 7, 8, 10, 12
t RC
tRC
CE\
tAOE
tAOE
t HZOE
tHZOE
t LZOE
tLZOE
OE\
tLZCE
tLZCE
tHZCE
tHZCE
ttACE
ACE
DQ
DATA VALID
t PU
tPU
t PD
tPD
Icc
MT5C1009
Rev. 5.5 8/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
6
SRAM
MT5C1009
Austin Semiconductor, Inc.
WRITE CYCLE NO. 1 12, 13
(Chip Enabled Controlled)
t WC
tWC
ADDRESS
t AW
tAW
t AS
tAS
tAH
tAH
t CW
tCW
CE\
t WP1
tWP1
WE\
t DS
tDS
D
tDH
tDH
DATA VAILD
Q
HIGH Z
WRITE CYCLE NO. 2 7, 12, 13
(Write Enabled Controlled)
t WC
tWC
ADDRESS
t AW
tAW
tAH
tAH
t CW
tCW
CE\
t AS
tAS
t WP1
tWP1
WE\
tDH
tDH
D
DATA VALID
Q
HIGH-Z
NOTE: Output enable (OE\) is inactive (HIGH).
MT5C1009
Rev. 5.5 8/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
7
SRAM
MT5C1009
Austin Semiconductor, Inc.
MECHANICAL DEFINITIONS*
ASI Case #111 (Package Designator C)
SMD 5962-89598, Case Outline Z
D
S1
S2
A
Q
L1
Pin 1
L
S
e
b
b1
E
NOTE
0o to 15o
SYMBOL
A
b
b1
c
D
E
E1
e
L
L1
Q
S
S1
S2
NOTE:
c
E1
SMD SPECIFICATIONS
MIN
MAX
--0.232
0.014
0.023
0.038
0.065
0.008
0.015
--1.700
0.350
0.405
0.390
0.420
0.100 BSC
0.125
0.200
0.150
--0.015
0.060
--0.100
0.005
--0.005
--Either configuration in detail A is allowed on SMD.
*All measurements are in inches.
MT5C1009
Rev. 5.5 8/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
8
SRAM
MT5C1009
Austin Semiconductor, Inc.
MECHANICAL DEFINITIONS*
ASI Case #112 (Package Designator CW)
SMD 5962-89598, Case Outline X
D
A
Q
L
b
e
Pin 1
b2
E
C
eA
SMD Specifications
SYMBOL
A
b
b2
C
D
E
eA
e
Q
L
MIN
0.089
0.016
0.045
0.009
1.585
0.585
MAX
0.111
0.020
0.050
0.011
1.615
0.605
0.600 BSC
0.100 BSC
0.040
0.125
0.060
0.175
*All measurements are in inches.
MT5C1009
Rev. 5.5 8/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
9
SRAM
MT5C1009
Austin Semiconductor, Inc.
MECHANICAL DEFINITIONS*
ASI Case #207 (Package Designator EC)
SMD 5962-89598, Case Outline U
See Detail A
A
L1
D
L
e
b
h x 45o
Detail A
E
L2
b2
b1
SYMBOL
A
b
b1
b2
D
E
e
h
L
L1
L2
SMD SPECIFICATIONS
MIN
MAX
0.080
0.100
0.022
0.028
0.006
0.022
0.040
--0.800
0.840
0.392
0.408
0.050 BSC
0.012 REF
0.070
0.080
0.090
0.110
0.003
0.015
*All measurements are in inches.
MT5C1009
Rev. 5.5 8/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
10
SRAM
MT5C1009
Austin Semiconductor, Inc.
MECHANICAL DEFINITIONS*
ASI Case #208 (Package Designator ECA)
SMD 5962-89598, Case Outline M
D1
A
L1
e
E1
E
See Detail A
L
D
b2
B1
Detail A
b1
SYMBOL
A
B1
b1
b2
D
D1
E
E1
e
L
L1
SMD SPECIFICATIONS
MIN
MAX
0.060
0.080
0.022
0.028
0.004
0.014
0.040
0.050
0.442
0.458
0.300 BSC
0.540
0.560
0.400 BSC
0.050 BSC
0.045
0.055
0.075
0.095
*All measurements are in inches.
MT5C1009
Rev. 5.5 8/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
11
SRAM
MT5C1009
Austin Semiconductor, Inc.
MECHANICAL DEFINITIONS*
ASI Case #303 (Package Designator F)
SMD 5962-89598, Case Outline T
E
L
Pin 1
Index
e
32
1
17
16
D
b
Bottom View
S
S1
E1
Top View
A
c
Q
E2
E3
SYMBOL
A
b
c
D
E
E1
E2
E3
e
L
Q
S
S1
SMD SPECIFICATIONS
MIN
MAX
0.097
0.125
0.015
0.019
0.003
0.009
--0.830
0.400
0.420
--0.450
0.180
--0.030
--0.050 BSC
0.250
0.370
0.026
0.045
--0.045
0.000
---
*All measurements are in inches.
MT5C1009
Rev. 5.5 8/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
12
SRAM
MT5C1009
Austin Semiconductor, Inc.
MECHANICAL DEFINITIONS*
ASI Case #501 (Package Designator DCJ)
SMD 5962-89598, Case Outline 7
A
D
e
D1
B1
E2
b
E1
E
A2
SYMBOL
A
A2
B1
b
D
D1
E
E1
E2
e
SMD SPECIFICATIONS
MIN
MAX
0.135
0.144
0.026
0.036
0.030
0.040
0.015
0.019
0.812
0.828
0.740
0.755
0.405
0.415
0.435
0.445
0.360
0.380
0.050 BSC
*All measurements are in inches.
MT5C1009
Rev. 5.5 8/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
13
SRAM
MT5C1009
Austin Semiconductor, Inc.
MECHANICAL DEFINITIONS*
See Detail A
ASI Case #507 (Package Designator SOJ)
SMD 5962-89598, Case Outline Y
A1
j
1
32
1234567890123456789012345
1234567890123456789012345
1234567890123456789012345
1234567890123456789012345
1234567890123456789012345
B
D1
B2
D
B1
E2
e
e2
e1
A2
Base
Plane
17
A
S
16
S1
B3
Seating
Plane
E
E1
SYMBOL
A
A1
A2
B
B1
B2
B3
D
D1
E
E1
E2
e
e1
e2
j
S
S1
123
123
123
123123
123
Detail A
SMD SPECIFICATIONS
MIN
MAX
0.120
0.165
0.088
0.120
0.070 REF
0.010 REF
.030R TYP
0.020 REF
0.025
0.045
0.816
0.838
0.75 REF
0.419
0.431
0.430
0.445
0.360
0.380
0.050 BSC
0.038 TYP
0.005
0.005 TYP
0.030
0.040
0.020 TYP
*All measurements are in inches.
MT5C1009
Rev. 5.5 8/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
14
SRAM
MT5C1009
Austin Semiconductor, Inc.
ORDERING INFORMATION
EXAMPLE: MT5C1009C-25/XT
Device
Package Speed
Options** Process
Number
Type
ns
MT5C1009
C
-15
L
/*
MT5C1009
CW
-15
L
/*
MT5C1009
C
-20
L
/*
MT5C1009
CW
-20
L
/*
MT5C1009
C
-25
L
/*
MT5C1009
CW
-25
L
/*
MT5C1009
C
-35
L
/*
MT5C1009
CW
-35
L
/*
MT5C1009
C
-45
L
/*
MT5C1009
CW
-45
L
/*
MT5C1009
C
-55
L
/*
MT5C1009
CW
-55
L
/*
MT5C1009
C
-70
L
/*
MT5C1009
CW
-70
L
/*
EXAMPLE: MT5C1009EC-45L/IT
Device
Package Speed
Options** Process
Number
Type
ns
MT5C1009
EC
-15
L
/*
MT5C1009
ECA
-15
L
/*
MT5C1009
EC
-20
L
/*
MT5C1009
ECA
-20
L
/*
MT5C1009
EC
-25
L
/*
MT5C1009
ECA
-25
L
/*
MT5C1009
EC
-35
L
/*
MT5C1009
ECA
-35
L
/*
MT5C1009
EC
-45
L
/*
MT5C1009
ECA
-45
L
/*
MT5C1009
EC
-55
L
/*
MT5C1009
ECA
-55
L
/*
MT5C1009
EC
-70
L
/*
MT5C1009
ECA
-70
L
/*
EXAMPLE: MT5C1009F-70L/883C
Device
Package Speed
Options** Process
ns
Number
Type
EXAMPLE: MT5C1009DCJ-35/883C
Device
Package Speed
Options** Process
Number
Type
ns
MT5C1009
DCJ
-15
L
/*
MT5C1009
SOJ
-15
L
/*
MT5C1009
DCJ
-20
L
/*
MT5C1009
SOJ
-20
L
/*
MT5C1009
DCJ
-25
L
/*
MT5C1009
SOJ
-25
L
/*
MT5C1009
DCJ
-35
L
/*
MT5C1009
SOJ
-35
L
/*
MT5C1009
DCJ
-45
L
/*
MT5C1009
SOJ
-45
L
/*
MT5C1009
DCJ
-55
L
/*
MT5C1009
SOJ
-55
L
/*
MT5C1009
DCJ
-70
L
/*
MT5C1009
SOJ
-70
L
/*
MT5C1009
F
-15
L
/*
MT5C1009
F
-20
L
/*
MT5C1009
F
-25
L
/*
MT5C1009
F
-35
L
/*
MT5C1009
F
-45
L
/*
MT5C1009
F
-55
L
/*
MT5C1009
F
-70
L
/*
*AVAILABLE PROCESSES
IT = Industrial Temperature Range
XT = Extended Temperature Range
883C = Full Military Processing
-40oC to +85oC
-55oC to +125oC
-55oC to +125oC
** OPTIONS
L = 2V data retention, low power standby
MT5C1009
Rev. 5.5 8/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
15
SRAM
Austin Semiconductor, Inc.
MT5C1009
ASI TO DSCC PART NUMBER CROSS REFERENCE
ASI Package Designator EC & ECA
ASI Package Designator C & CW
ASI Part #
SMD Part #
ASI Part #
SMD Part #
MT5C1009C-20/883C
MT5C1009C-20L/883C
MT5C1009C-25L/883C
MT5C1009C-25/883C
MT5C1009C-35L/883C
MT5C1009C-35/883C
MT5C1009C-45L/883C
MT5C1009C-45/883C
MT5C1009C-55L/883C
MT5C1009C-55/883C
MT5C1009C-70L/883C
MT5C1009C-70/883C
5962-8959839MZA
5962-8959840MZA
5962-8959812MZA
5962-8959829MZA
5962-8959811MZA
5962-8959828MZA
5962-8959810MZA
5962-8959827MZA
5962-8959809MZA
5962-8959826MZA
5962-8959808MZA
5962-8959825MZA
MT5C1009EC-20/883C
MT5C1009EC-20L/883C
MT5C1009EC-25L/883C
MT5C1009EC-25/883C
MT5C1009EC-35L/883C
MT5C1009EC-35/883C
MT5C1009EC-45L/883C
MT5C1009EC-45/883C
MT5C1009EC-55L/883C
MT5C1009EC-55/883C
MT5C1009EC-70L/883C
MT5C1009EC-70/883C
5962-8959839MUA
5962-8959840MUA
5962-8959812MUA
5962-8959829MUA
5962-8959811MUA
5962-8959828MUA
5962-8959810MUA
5962-8959827MUA
5962-8959809MUA
5962-8959826MUA
5962-8959808MUA
5962-8959825MUA
MT5C1009CW-20/883C
MT5C1009CW-20L/883C
MT5C1009CW-25L/883C
MT5C1009CW-25/883C
MT5C1009CW-35L/883C
MT5C1009CW-35/883C
MT5C1009CW-45L/883C
MT5C1009CW-45/883C
MT5C1009CW-55L/883C
MT5C1009CW-55/883C
MT5C1009CW-70L/883C
MT5C1009CW-70/883C
5962-8959839MXA
5962-8959840MXA
5962-8959812MXA
5962-8959829MXA
5962-8959811MXA
5962-8959828MXA
5962-8959810MXA
5962-8959827MXA
5962-8959809MXA
5962-8959826MXA
5962-8959808MXA
5962-8959825MXA
MT5C1009ECA-20/883C
MT5C1009ECA-20L/883C
MT5C1009ECA-25L/883C
MT5C1009ECA-25/883C
MT5C1009ECA-35L/883C
MT5C1009ECA-35/883C
MT5C1009ECA-45L/883C
MT5C1009ECA-45/883C
MT5C1009ECA-55L/883C
MT5C1009ECA-55/883C
MT5C1009ECA-70L/883C
MT5C1009ECA-70/883C
5962-8959839MMA
5962-8959840MMA
5962-8959812MMA
5962-8959829MMA
5962-8959811MMA
5962-8959828MMA
5962-8959810MMA
5962-8959827MMA
5962-8959809MMA
5962-8959826MMA
5962-8959808MMA
5962-8959825MMA
ASI Package Designator DCJ
ASI Package Designator F
ASI Part #
MT5C1009F-20/883C
MT5C1009F-20L/883C
MT5C1009F-25L/883C
MT5C1009F-25/883C
MT5C1009F-35L/883C
MT5C1009F-35/883C
MT5C1009F-45L/883C
MT5C1009F-45/883C
MT5C1009F-55L/883C
MT5C1009F-55/883C
MT5C1009F-70L/883C
MT5C1009F-70/883C
ASI Part #
SMD Part #
MT5C1009DCJ-20/883C
MT5C1009DCJ-20L/883C
MT5C1009DCJ-25L/883C
MT5C1009DCJ-25/883C
MT5C1009DCJ-35L/883C
MT5C1009DCJ-35/883C
MT5C1009DCJ-45L/883C
MT5C1009DCJ-45/883C
MT5C1009DCJ-55L/883C
MT5C1009DCJ-55/883C
MT5C1009DCJ-70L/883C
MT5C1009DCJ-70/883C
5962-8959839MTA
5962-8959840MTA
5962-8959812MTA
5962-8959829MTA
5962-8959811MTA
5962-8959828MTA
5962-8959810MTA
5962-8959827MTA
5962-8959809MTA
5962-8959826MTA
5962-8959808MTA
5962-8959825MTA
SMD Part #
5962-8959839M7A
5962-8959840M7A
5962-8959812M7A
5962-8959829M7A
5962-8959811M7A
5962-8959828M7A
5962-8959810M7A
5962-8959827M7A
5962-8959809M7A
5962-8959826M7A
5962-8959808M7A
5962-8959825M7A
ASI Package Designator SOJ
ASI Part #
SMD Part #
MT5C1009SOJ-20/883C
MT5C1009SOJ-20L/883C
MT5C1009SOJ-25L/883C
MT5C1009SOJ-25/883C
MT5C1009SOJ-35L/883C
MT5C1009SOJ-35/883C
MT5C1009SOJ-45L/883C
MT5C1009SOJ-45/883C
MT5C1009SOJ-55L/883C
MT5C1009SOJ-55/883C
MT5C1009SOJ-70L/883C
MT5C1009SOJ-70/883C
5962-8959839M7A
5962-8959840M7A
5962-8959812M7A
5962-8959829M7A
5962-8959811M7A
5962-8959828M7A
5962-8959810M7A
5962-8959827M7A
5962-8959809M7A
5962-8959826M7A
5962-8959808M7A
5962-8959825M7A
* ASI part number is for reference only. Orders received referencing the SMD part number will be processed per the SMD.
MT5C1009
Rev. 5.5 8/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
16
SRAM
Austin Semiconductor, Inc.
MT5C1009
DATE: 2/6/01
Technical Note:
128Kx8 SRAM – Maximum Recommended Supply
Voltage and Ambient Temperature
Compliance:
This product fully meets and is tested in compliance with SMD# 5962-89598 and tested in accordance
with JESD78.
Specific Product Affected:
Die Manufacturer: Alliance Semiconductor Corporation
Die Name: AS2008SA
Device Types: MT5C1008 , MT5C1009
Speed Grades: All
Package Designators: All
Identifying Date Code Marking: Change implemented on product starting with date code 0100.
Characteristic Identified:
Austin Semiconductor, Inc. has received notification from this die vendor, Alliance Semiconductor Corp.,
that operation at high Vcc’s of 6 volts and beyond may result in a latch-up condition. This can cause
permanent damage to the device.
Recommendation:
During use in system applications and during manufacturing processes, including Burn-In and Test, the
devices should not be subjected to Vcc Supply Voltages higher than 5.5Volts at 125°C.
MT5C1009
Rev. 5.5 8/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
17
Similar pages