Fairchild FJC1386 Pnp epitaxial silicon transistor Datasheet

FJC1386
PNP Epitaxial Silicon Transistor
Low Saturation Transistor Medium Power Amplifier
• Complement to FJC2098
• High Collector Current
• Low Collector-Emitter Saturation Voltage
Marking
1 3
8 6
P Y
W W
SOT-89
1
Weekly code
Year code
hFE grage
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings
Symbol
Ta = 25°C unless otherwise noted
Value
Units
VCBO
Collector-Base Voltage
Parameter
-30
V
VCEO
Collector-Emitter Voltage
-20
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current (DC)
-5
A
PC
Power Dissipation (Ta = 25°C)
0.5
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-55 to +150
°C
Electrical Characteristics T
Symbol
a=
25°C unless otherwise noted
Parameter
Test Condition
Min.
Max.
Units
BVCBO
Collector-Base Breakdown Voltage
IC = -50µA, IE = 0
-30
V
BVCEO
Collector-Emitter Breakdown Voltage
IC = -1mA, IB = 0
-20
V
BVEBO
Emitter-Base Breakdown Voltage
IE = -50µA, IC = 0
-6
ICBO
Collector-Cutoff Current
VCB = -20V, VB = 0
IEBO
Emitter-Cutoff Current
VEB = -5V, IC = 0
hFE
DC Current Gain
VCE = -2V, IC =-0.5A
VCE (sat)
Collector-Emitter Saturation Voltage
IC = -4A, IB = -0.1A
-1.0
V
VBE (sat)
Base-Emitter Saturation Voltage
IC = -4A, IB = -0.1A
-1.5
V
©2005 Fairchild Semiconductor Corporation
FJC1386 Rev. C1
1
80
V
-0.5
µA
-0.5
µA
390
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FJC1386 PNP Epitaxial Silicon Transistor
July 2005
Symbol
RθJA
Ta = 25°C unless otherwise noted
Parameter
Thermal Resistance, Junction to Ambient
Max.
Units
250
°C/W
hFE Classification
Classification
P
Q
R
hFE
80 ~ 180
120 ~ 270
180 ~ 390
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
1386
FJC1386
SOT-89
13”
--
4,000
FJC1386 Rev. C1
2
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FJC1386 PNP Epitaxial Silicon Transistor
Thermal Characteristics
Figure 1. Static Characteristic
Figure 2. DC Current Gain
-1400
1000
VCE = - 2V
-1200
o
Ta = 125 C
IB = -6mA
-1000
IB = -5mA
-800
IB = -4mA
-600
IB = -3mA
-400
IB = -2mA
-200
0
o
Ta = 25 C
hFE, DC CURRENT GAIN
IC [mA], COLLECTOR CURRENT
IB = -7mA
o
Ta = - 40 C
100
IB = -1mA
0
-2
-4
-6
-8
-10
-12
-14
10
-10m
-16
-100m
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 4. Base-Emitter Saturation Voltage
-10
IC = 10 IB
VBE(sat) [V], SATURATION VOLTAGE
VCE(sat) [V], SATURATION VOLTAGE
-10
-1
o
Ta = 125 C
-100m
o
Ta = 25 C
o
Ta = - 40 C
-10m
-1m
-1m
-10m
-100m
-1
IC = 10 IB
-1
o
Ta = - 40 C
o
Ta = 125 C
-0.1
-1m
-10
-100m
-1
-10
IC [A], COLLECTOR CURRENT
Figure 5. Base-Emitter On Voltage
Figure 6. Power Derating
-1.8
PC [W], COLLECTOR POWER DISSIPATION
0.7
VCE = - 2V
-1.6
IC [A], COLLECTOR CURRENT
o
Ta = 25 C
-10m
IC [A], COLLECTOR CURRENT
-1.4
-1.2
-1.0
-0.8
-0.6
-0.4
125°C
25°C
- 40°C
-0.2
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
25
50
75
100
125
150
175
Ta [°C], AMIBIENT TEMPERATURE
VBE [V], BASE-EMITTER VOLTAGE
FJC1386 Rev. C1
-10
IC [A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
-0.0
-0.0
-1
3
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FJC1386 PNP Epitaxial Silicon Transistor
Typical Performance Characteristics
FJC1386 PNP Epitaxial Silicon Transistor
Mechanical Dimensions
SOT-89
1.50 ±0.20
4.50 ±0.20
(0.40)
4.10
(1.10)
2.50
±0.20
C0.2
±0.20
(0.50)
1.65 ±0.10
0.50 ±0.10
0.40 ±0.10
0.40
+0.10
–0.05
1.50 TYP 1.50 TYP
Dimensions in Millimeters
FJC1386 Rev. C1
4
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Definition of Terms
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Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
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First Production
This datasheet contains preliminary data, and
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changes at any time without notice in order to improve
design.
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that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I16
5
FJC1386 Rev. C1
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FJC1386 PNP Epitaxial Silicon Transistor
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