NXP BT151S Thyristor Datasheet

BT151S series L and R
Thyristors
Rev. 05 — 9 October 2006
Product data sheet
1. Product profile
1.1 General description
Passivated thyristors in a SOT428 plastic package.
1.2 Features
n High thermal cycling performance
n High bidirectional blocking voltage
capability
n Surface-mounted package
1.3 Applications
n Motor control
n Ignition circuits
n Static switching
n Protection circuits
1.4 Quick reference data
n
n
n
n
n
n
VDRM ≤ 500 V (BT151S-500L/R)
VRRM ≤ 500 V (BT151S-500L/R)
VDRM ≤ 650 V (BT151S-650L/R)
VRRM ≤ 650 V (BT151S-650L/R)
VDRM ≤ 800 V (BT151S-800R)
VRRM ≤ 800 V (BT151S-800R)
ITSM ≤ 120 A (t = 10 ms)
IT(RMS) ≤ 12 A
IT(AV) ≤ 7.5 A
IGT ≤ 5 mA (BT151S series L)
IGT ≤ 15 mA (BT151S series R)
n
n
n
n
n
2. Pinning information
Table 1.
Pinning
Pin
Description
1
cathode (K)
2
anode (A)
3
gate (G)
mb
mounting base; connected to anode
Simplified outline
Symbol
mb
A
K
G
sym037
2
1
3
SOT428 (DPAK)
BT151S series L and R
NXP Semiconductors
Thyristors
3. Ordering information
Table 2.
Ordering information
Type number
Package
BT151S-500L
Name
Description
Version
DPAK
plastic single-ended surface-mounted package; 3 leads (one lead cropped) SOT428
BT151S-500R
BT151S-650L
BT151S-650R
BT151S-800R
4. Limiting values
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDRM
repetitive peak off-state voltage
BT151S-500L; BT151S-500R
[1]
-
500
V
BT151S-650L; BT151S-650R
[1]
-
650
V
BT151S-800R
VRRM
repetitive peak reverse voltage
-
800
V
BT151S-500L; BT151S-500R
[1]
-
500
V
BT151S-650L; BT151S-650R
[1]
-
650
V
BT151S-800R
-
800
V
IT(AV)
average on-state current
half sine wave; Tmb ≤ 103 °C;
see Figure 1
-
7.5
A
IT(RMS)
RMS on-state current
all conduction angles; see Figure 4
and 5
-
12
A
ITSM
non-repetitive peak on-state
current
half sine wave; Tj = 25 °C prior to
surge; see Figure 2 and 3
t = 10 ms
-
120
A
t = 8.3 ms
-
132
A
t = 10 ms
-
72
A2s
ITM = 20 A; IG = 50 mA;
dIG/dt = 50 mA/µs
-
50
A/µs
I2t
I2t
dIT/dt
rate of rise of on-state current
IGM
peak gate current
-
2
A
VRGM
peak reverse gate voltage
-
5
V
PGM
peak gate power
-
5
W
PG(AV)
average gate power
-
0.5
W
Tstg
storage temperature
−40
+150
°C
Tj
junction temperature
-
125
°C
[1]
for fusing
over any 20 ms period
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the thyristor may switch to the on-state.
The rate of rise of current should not exceed 15A/µs.
BT151S_SER_L_R_5
Product data sheet
© NXP B.V. 2006. All rights reserved.
Rev. 05 — 9 October 2006
2 of 13
BT151S series L and R
NXP Semiconductors
Thyristors
001aab019
15
a=
1.57
Ptot
(W)
98
Tmb(max)
(°C)
1.9
2.2
10
107
2.8
4
5
conduction
angle
(degrees)
form
factor
a
30
60
90
120
180
4
2.8
2.2
1.9
1.57
116
α
0
125
0
2
4
6
8
IT(AV) (A)
Form factor a = IT(RMS)/IT(AV)
Fig 1. Total power dissipation as a function of average on-state current; maximum values
001aaa957
160
ITSM
(A)
IT
ITSM
120
t
tp
Tj initial = 25 °C max
80
40
0
1
102
10
n
103
f = 50 Hz
Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BT151S_SER_L_R_5
Product data sheet
© NXP B.V. 2006. All rights reserved.
Rev. 05 — 9 October 2006
3 of 13
BT151S series L and R
NXP Semiconductors
Thyristors
001aaa956
103
ITSM
(A)
dlT/dt limit
102
IT
ITSM
t
tp
Tj initial = 25 °C max
10
10−5
10−4
10−3
10−2
tp (s)
tp ≤ 10 ms
Fig 3. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values
001aaa954
25
IT(RMS)
(A)
20
001aaa998
16
IT(RMS)
(A)
12
15
8
10
4
5
0
10−2
10−1
1
10
surge duration (s)
0
−50
0
50
100
150
Tmb (°C)
f = 50 Hz; Tmb ≤ 103 °C
Fig 4. RMS on-state current as a function of surge
duration; maximum values
Fig 5. RMS on-state current as a function of mounting
base temperature; maximum values
BT151S_SER_L_R_5
Product data sheet
© NXP B.V. 2006. All rights reserved.
Rev. 05 — 9 October 2006
4 of 13
BT151S series L and R
NXP Semiconductors
Thyristors
5. Thermal characteristics
Table 4.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance from junction to
mounting base
see Figure 6
-
-
1.8
K/W
Rth(j-a)
thermal resistance from junction to
ambient
mounted on an FR4
printed-circuit board; see
Figure 14
-
75
-
K/W
001aaa963
10
Zth(j-mb)
(K/W)
1
10−1
δ=
P
tp
T
10−2
t
tp
T
10−3
10−5
10−4
10−3
10−2
10−1
1
10
tp (s)
Fig 6. Transient thermal impedance from junction to mounting base as a function of pulse width
BT151S_SER_L_R_5
Product data sheet
© NXP B.V. 2006. All rights reserved.
Rev. 05 — 9 October 2006
5 of 13
BT151S series L and R
NXP Semiconductors
Thyristors
6. Characteristics
Table 5.
Characteristics
Tj = 25 °C unless otherwise stated.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
BT151S-500L
-
2
5
mA
BT151S-500R
-
2
15
mA
BT151S-650L
-
2
5
mA
BT151S-650R
-
2
15
mA
BT151S-800R
-
2
15
mA
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 100 mA; see Figure 8
IL
latching current
VD = 12 V; IGT = 100 mA; see
Figure 10
-
10
40
mA
IH
holding current
VD = 12 V; IGT = 100 mA; see
Figure 11
-
7
20
mA
VT
on-state voltage
IT = 23 A; see Figure 9
-
1.4
1.75
V
VGT
gate trigger voltage
IT = 100 mA; VD = 12 V; see Figure 7
-
0.6
1.5
V
IT = 100 mA; VD = VDRM(max);
Tj = 125 °C
0.25
0.4
-
V
ID
off-state current
VD = VDRM(max); Tj = 125 °C
-
0.1
0.5
mA
IR
reverse current
VR = VRRM(max); Tj = 125 °C
-
0.1
0.5
mA
200
1000
-
V/µs
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
VDM = 0.67 × VDRM(max); Tj = 125 °C;
exponential waveform; see Figure 12
RGK = 100 Ω
50
130
-
V/µs
tgt
gate-controlled turn-on
time
ITM = 40 A; VD = VDRM(max);
IG = 100 mA; dIG/dt = 5 A/µs
gate open circuit
-
2
-
µs
tq
commutated turn-off
time
VDM = 0.67 × VDRM(max); Tj = 125 °C;
ITM = 20 A; VR = 25 V;
(dIT/dt)M = 30 A/µs; dVD/dt = 50 V/µs;
RGK = 100 Ω
-
70
-
µs
BT151S_SER_L_R_5
Product data sheet
© NXP B.V. 2006. All rights reserved.
Rev. 05 — 9 October 2006
6 of 13
BT151S series L and R
NXP Semiconductors
Thyristors
001aaa953
1.6
VGT
VGT(25°C)
IGT
IGT(25°C)
1.2
2
0.8
1
0.4
−50
0
50
100
150
001aaa952
3
0
−50
0
50
100
Tj (°C)
Fig 7. Normalized gate trigger voltage as a function of
junction temperature
001aaa959
30
150
Tj (°C)
Fig 8. Normalized gate trigger current as a function of
junction temperature
001aaa951
3
IL
IL(25°C)
IT
(A)
2
20
(1)
(2)
(3)
1
10
0
0
0.5
1
1.5
2
0
−50
0
50
100
150
Tj (°C)
VT (V)
Vo = 1.06 V
Rs = 0.0304 Ω
(1) Tj = 125 °C; typical values
(2) Tj = 125 °C; maximum values
(3) Tj = 25 °C; maximum values
Fig 9. On-state current as a function of on-state
voltage
Fig 10. Normalized latching current as a function of
junction temperature
BT151S_SER_L_R_5
Product data sheet
© NXP B.V. 2006. All rights reserved.
Rev. 05 — 9 October 2006
7 of 13
BT151S series L and R
NXP Semiconductors
Thyristors
001aaa950
3
001aaa949
104
IH
IH(25°C)
dVD/dt
(V/µs)
2
103
(1)
(2)
102
1
0
−50
10
0
50
100
150
0
50
Tj (°C)
100
150
Tj (°C)
(1) RGK = 100 Ω
(2) Gate open circuit
Fig 11. Normalized holding current as a function of
junction temperature
Fig 12. Critical rate of rise of off-state voltage as a
function of junction temperature; minimum
values
BT151S_SER_L_R_5
Product data sheet
© NXP B.V. 2006. All rights reserved.
Rev. 05 — 9 October 2006
8 of 13
BT151S series L and R
NXP Semiconductors
Thyristors
7. Package outline
Plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped)
SOT428
y
E
A
A
A1
b2
E1
mounting
base
D2
D1
HD
2
L
L2
1
L1
3
b1
b
w
M
c
A
e
e1
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
b
b1
b2
c
D1
D2
min
E
E1
min
e
e1
HD
L
L1
min
L2
w
y
max
mm
2.38
2.22
0.93
0.46
0.89
0.71
1.1
0.9
5.46
5.00
0.56
0.20
6.22
5.98
4.0
6.73
6.47
4.45
2.285
4.57
10.4
9.6
2.95
2.55
0.5
0.9
0.5
0.2
0.2
OUTLINE
VERSION
SOT428
REFERENCES
IEC
JEDEC
JEITA
TO-252
SC-63
EUROPEAN
PROJECTION
ISSUE DATE
06-02-14
06-03-16
Fig 13. Package outline SOT428 (DPAK)
BT151S_SER_L_R_5
Product data sheet
© NXP B.V. 2006. All rights reserved.
Rev. 05 — 9 October 2006
9 of 13
BT151S series L and R
NXP Semiconductors
Thyristors
8. Mounting
7.0
7.0
1.5
2.15
2.5
4.57
001aab021
Plastic meets requirements of UL94 V-O at 3.175 mm
Fig 14. SOT428: minimum pad size for surface-mounting
BT151S_SER_L_R_5
Product data sheet
© NXP B.V. 2006. All rights reserved.
Rev. 05 — 9 October 2006
10 of 13
BT151S series L and R
NXP Semiconductors
Thyristors
9. Revision history
Table 6.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BT151S_SER_L_R_5
20061009
Product data sheet
-
BT151S_SERIES_4
Modifications:
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
•
•
Legal texts have been adapted to the new company name where appropriate.
Added type numbers BT151S-500L and BT151S-650L
BT151S_SERIES_4
(9397 750 13161)
20040609
Product specification
-
BT151S_SERIES_3
BT151S_SERIES_3
20020101
Product specification
-
BT151S_SERIES_2
BT151S_SERIES_2
19990601
Product specification
-
BT151S_SERIES_1
BT151S_SERIES_1
19970901
Product specification
-
-
BT151S_SER_L_R_5
Product data sheet
© NXP B.V. 2006. All rights reserved.
Rev. 05 — 9 October 2006
11 of 13
BT151S series L and R
NXP Semiconductors
Thyristors
10. Legal information
10.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
10.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
10.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of a NXP Semiconductors product can reasonably be expected to
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
10.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
11. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [email protected]
BT151S_SER_L_R_5
Product data sheet
© NXP B.V. 2006. All rights reserved.
Rev. 05 — 9 October 2006
12 of 13
NXP Semiconductors
BT151S series L and R
Thyristors
12. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
10.1
10.2
10.3
10.4
11
12
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 5
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Mounting. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11
Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Contact information. . . . . . . . . . . . . . . . . . . . . 12
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2006.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 9 October 2006
Document identifier: BT151S_SER_L_R_5
Similar pages