Infineon BCR101T Npn silicon digital transistor Datasheet

BCR101...
NPN Silicon Digital Transistor
• Switching circuit, inverter, interface circuit,
driver circuit
• Built in bias resistor (R1 = 100kΩ , R2 = 100kΩ )
BCR101F/L3
BCR101T
C
3
R1
R2
1
B
2
E
EHA07184
Type
Marking
Pin Configuration
Package
BCR101F*
UCs
1=B
2=E
3=C
-
-
-
TSFP-3
BCR101L3*
UC
1=B
2=E
3=C
-
-
-
TSLP-3-4
BCR101T*
UCs
1=B
2=E
3=C
-
-
-
SC75
*Preliminary
Maximum Ratings
Parameter
Symbol
Value
Collector-emitter voltage
VCEO
50
Collector-base voltage
VCBO
50
Emitter-base voltage
VEBO
10
Input on voltage
Vi(on)
50
Collector current
IC
50
Total power dissipation-
Ptot
250
BCR101L3, TS ≤ 135°C
250
BCR101T, TS ≤ 109°C
250
Tj
Storage temperature
Tstg
1
V
mA
mW
BCR101F, TS ≤ 128°C
Junction temperature
Unit
150
°C
-65 ... 150
Nov-27-2003
BCR101...
Thermal Resistance
Parameter
Junction - soldering point1)
Symbol
RthJS
Value
BCR101F
≤ 90
BCR101L3
≤ 60
BCR101T
≤ 165
Unit
K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Symbol
Values
Unit
Parameter
min.
typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO 50
V
IC = 100 µA, IB = 0
Collector-base breakdown voltage
50
-
-
I CBO
-
-
100
nA
I EBO
-
-
75
µA
h FE
70
-
-
-
-
-
0.3
V
Vi(off)
0.5
-
1.8
Vi(on)
1
-
3
Input resistor
R1
70
100
130
kΩ
Resistor ratio
R1/R 2
0.9
1
1.1
-
fT
-
100
-
MHz
Ccb
-
3
-
pF
V(BR)CBO
IC = 10 µA, IE = 0
Collector-base cutoff current
VCB = 40 V, IE = 0
Emitter-base cutoff current
VEB = 10 V, IC = 0
DC current gain2)
IC = 5 mA, VCE = 5 V
Collector-emitter saturation voltage2)
VCEsat
IC = 5 mA, IB = 0.25 mA
Input off voltage
IC = 100 µA, VCE = 5 V
Input on voltage
IC = 1 mA, VCE = 0.3 V
AC Characteristics
Transition frequency
IC = 10 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
1For calculation of R
thJA please refer to Application Note Thermal Resistance
2Pulse test: t < 300µs; D < 2%
2
Nov-27-2003
BCR101...
DC current gain hFE = ƒ(IC)
VCE = 5 V (common emitter configuration)
Collector-emitter saturation voltage
VCEsat = ƒ(IC), hFE = 20
10 3
10 -1
A
IC
h FE
10 -2
10 2
10 -3
10 1 -4
10
10
-3
10
-2
A
10
10 -4
0
-1
0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4
IC
V
0.5
VCEsat
Input on Voltage Vi(on) = ƒ(I C)
VCE = 0.3V (common emitter configuration)
Input off voltage V i(off) = ƒ(IC)
VCE = 5V (common emitter configuration)
10 -2
A
A
10 -2
10 -3
IC
IC
10 -1
10 -3
10 -4
10 -4
10 -5
10 -5 -1
10
10
0
10
1
V
10
10 -6
0.5
2
Vi(on)
1
1.5
2
2.5
3
V
4
Vi(off)
3
Nov-27-2003
BCR101...
Total power dissipation Ptot = ƒ(TS)
BCR101F
Total power dissipation Ptot = ƒ(TS)
BCR101L3
300
300
mW
200
P tot
P tot
mW
200
150
150
100
100
50
50
0
0
20
40
60
80
100
120 °C
0
0
150
20
40
60
80
120 °C
100
TS
Total power dissipation Ptot = ƒ(TS)
BCR101T
Permissible Puls Load R thJS = ƒ (tp)
BCR101F
10 2
300
K/W
RthJS
mW
Ptot
150
TS
200
D=0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
10 1
150
10 0
100
50
0
0
20
40
60
80
100
120 °C
10 -1 -6
10
150
TS
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
4
Nov-27-2003
BCR101...
Permissible Puls Load R thJS = ƒ (tp)
BCR101L3
Permissible Pulse Load
Ptotmax/P totDC = ƒ(tp)
BCR101F
10 2
10 2
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 1
10 0 -6
10
RthJS
P totmax/P totDC
10 3
10
-5
10
-4
10
10 1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10 0
-3
10
-2
s
10
10 -1 -7
10
0
10
-6
10
-5
10
-4
10
-3
10
tp
-2
s
10
0
10
0
tp
Permissible Puls Load R thJS = ƒ (tp)
BCR101T
Permissible Pulse Load
Ptotmax/P totDC = ƒ(tp)
BCR101L3
10 3
10 3
10 2
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 2
RthJS
Ptotmax/ PtotDC
K/W
10 1
D=0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
10 1
10 0
10 0 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
10 -1 -6
10
0
tp
10
-5
10
-4
10
-3
10
-2
s
tp
5
Nov-27-2003
BCR101...
Permissible Pulse Load
Ptotmax/P totDC = ƒ(tp)
BCR101T
P totmax / P totDC
10 3
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 2
10 1
10 0 -6
10
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
6
Nov-27-2003
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