Dynex DS2906SA Rectifier diode Datasheet

DS2906SA
Rectifier Diode
DS5922-1.1 March 2009 (LN26638)
FEATURES
KEY PARAMETERS
Double Side Cooling
High Surge Capability
VRRM
IF(AV)
IFSM
4000V
5651A
83000A
APPLICATIONS
Rectification
Free-wheel Diode
DC Motor Control
Power Supplies
Welding
Battery Chargers
VOLTAGE RATINGS
Part and
Ordering
Number
Repetitive Peak
Voltages
VDRM and VDRM
V
DS2906SA40
DS2906SA39
DS2906SA38
DS2906SA37
DS2906SA36
DS2906SA35
4000
3900
3800
3700
3600
3500
Conditions
VRSM = VRRM+100V
Lower voltage grades available.
ORDERING INFORMATION
When ordering, select the required part number
shown in the Voltage Ratings selection table.
For example:
Outline type code: A
(See Package Details for further information)
Fig. 1 Package outlines
DS2906SA39
Note: Please use the complete part number when ordering
and quote this number in any future correspondence
relating to your order.
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DS2906SA
SEMICONDUCTOR
CURRENT RATINGS
Tcase = 75°C unless stated otherwise
Parameter
Symbol
Test Conditions
Max.
Units
5651
A
Double Side Cooled
IF(AV)
Mean forward current
IF(RMS)
RMS value
-
8877
A
Continuous (direct) on-state current
-
8208
A
3707
A
IF
Half wave resistive load
Single Side Cooled (Anode side)
IF(AV)
Mean forward current
IF(RMS)
RMS value
-
5821
A
Continuous (direct) on-state current
-
4976
A
Test Conditions
Max.
Units
4350
A
IF
Half wave resistive load
Tcase = 100°C unless stated otherwise
Parameter
Symbol
Double Side Cooled
IF(AV)
Mean forward current
IF(RMS)
RMS value
-
6830
A
Continuous (direct) on-state current
-
6160
A
2795
A
IF
Half wave resistive load
Single Side Cooled (Anode side)
IF(AV)
Mean forward current
IF(RMS)
RMS value
-
4390
A
Continuous (direct) on-state current
-
3640
A
IF
Half wave resistive load
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DS2906SA
SEMICONDUCTOR
SURGE RATINGS
Symbol
IFSM
2
It
IFSM
2
It
Parameter
Surge (non-repetitive) on-state current
2
I t for fusing
Surge (non-repetitive) on-state current
Test Conditions
Max.
Units
10ms half sine, Tcase = 150°C
66.5
kA
VR = 50% VRRM - ¼ sine
22
MA s
10ms half sine, Tcase = 150°C
83
kA
VR = 0
34.5
MA s
Min.
Max.
Units
2
I t for fusing
2
2
THERMAL AND MECHANICAL RATINGS
Symbol
Rth(j-c)
Rth(c-h)
Tvj
Parameter
Thermal resistance – junction to case
Thermal resistance – case to heatsink
Virtual junction temperature
Test Conditions
Double side cooled
DC
-
0.0065
°C/W
Single side cooled
Anode DC
-
0.013
°C/W
Cathode DC
-
0.013
°C/W
Clamping force 83.0kN
Double side
-
0.001
°C/W
(with mounting compound)
Single side
-
0.002
°C/W
On-state (conducting)
-
160
°C
Reverse (blocking)
-
150
°C
Tstg
Storage temperature range
-55
150
°C
Fm
Clamping force
75.0
91.0
kN
CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min.
Max.
Units
VFM
Forward voltage
At 3000A peak, Tcase = 25°C
-
1.06
V
IRM
Peak reverse current
At VDRM, Tcase = 150°C
-
400
mA
VTO
Threshold voltage
At Tvj = 150°C
-
0.78
V
rT
Slope resistance
At Tvj = 150°C
-
0.0763
m
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DS2906SA
SEMICONDUCTOR
8000
7000
7000
6000
6000
Mean power dissipation - (W)
Instantaneous forward current, IF - (A)
CURVES
5000
4000
Tj = 150°C
3000
Tj = 25°C
5000
4000
3000
2000
2000
dc
1/2 wave
3 phase
6 phase
1000
1000
0
0.5
0
0.6
0.7 0.8 0.9
1
1.1 1.2 1.3
Instantaneous forward voltage, VF - (V)
1.4
Fig.2 Maximum (limit) forward characteristics
VTM EQUATION
VTM = A + Bln (IT) + C.IT+D.IT
0
1000
2000
3000
4000
5000
6000
Mean on-state current, IT(AV) - (A)
Fig.3 Power loss curves
Where
A = - 0.01591
B = 0.113682
-5
C = 8.04 x 10
D = - 0.00284
these values are valid for Tj = 150°C for IF 500A to 7000A
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DS2906SA
SEMICONDUCTOR
16000
350
14000
300
Reverse recovery current, IRR - (A)
Stored charge, Qs - (µC)
12000
10000
8000
6000
4000
250
200
150
100
50
2000
0
0
0
0
1
2
3
4
5
6
7
Rate of decay of forward current, dIf/dt - (A/µs)
8
Fig.4 Stored charge
0.1
Conduction
90
Single side
0.013
0.0137
0.0138
0.0141
Conditions :
Tcase = 150ºC
VR = 0
Pulse width = 10ms
80
70
Anode side cooled
0.01
Double side cooled
0.001
Surge current IFSM - (kA)
Thermal impedance - (° C/W)
8
Fig.5 Reverse recovery current
Effective thermal resistance
Junction to case ° C/W
Double side
0.0065
d.c.
0.0072
Halfwave
0.0073
3 phase 120°
0.0076
6 phase 60°
1
2
3
4
5
6
7
Rate of decay of forward current, dIf/dt - (A/µs)
60
50
40
30
20
10
0
0.0001
0.001
1
0.01
0.1
1
Time - (s)
10
100
Fig.6 Maximum (limit) transient thermal impedance –
junction to case
10
100
Number of pulses
Fig.7 Multi-cycle surge current
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DS2906SA
SEMICONDUCTOR
80
Conditions:
T case = 150ºC
VR = 0
half sine wave
Surge current, IFSM - (kA)
120
70
100
60
80
50
60
40
40
30
20
20
0
1
10
I2t value - (MA2s)
140
10
100
Pulse width, tp - (ms)
Fig.8 Sub-cycle surge current
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DS2906SA
SEMICONDUCTOR
PACKAGE DETAILS
For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
2 holes Ø 3.6 x 2.0 deep (In both electrodes)
Cathode
Ø148 nom
35.0 ± 0.5
Ø100 nom
Ø100 nom
Anode
Ø138.5
Nominal weight: 2575g
Clamping force: 83kN ±10%
Package outline type code: A
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DS2906SA
SEMICONDUCTOR
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our
customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise
the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is
available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or
Customer Services.
Stresses above those listed in this data sheet may cause permanent damage to the device. In extreme conditions, as with all
semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be
followed.
http://www.dynexsemi.com
e-mail: [email protected]
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln
Lincolnshire, LN6 3LF. United Kingdom.
Tel: +44(0)1522 500500
Fax: +44(0)1522 500550
CUSTOMER SERVICE
Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020
Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR
RESALE. PRODUCED IN UNITED KINGDOM.
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suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible
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