Vishay MBR1545CTPBF Schottky rectifier, 2 x 7.5 a Datasheet

VS-MBR15...CTPbF Series, VS-MBR15...CT-N3 Series
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Vishay Semiconductors
Schottky Rectifier, 2 x 7.5 A
FEATURES
Base 2
common
cathode
Anode
TO-220AB
• 150 °C TJ operation
Anode
2
1 Common 3
cathode
• Low forward voltage drop
• High frequency operation
• High
purity,
high
temperature
epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
PRODUCT SUMMARY
Package
TO-220AB
IF(AV)
2 x 7.5 A
VR
35 V, 45 V
VF at IF
0.57 V
IRM max.
15 mA at 125 °C
TJ max.
150 °C
Diode variation
Common cathode
EAS
7 mJ
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
The VS-MBR15...CT... center tap Schottky rectifier has been
optimized for low reverse leakage at high temperature. The
proprietary barrier technology allows for reliable operation
up to 150 °C junction temperature. Typical applications are
in switching power supplies, converters, freewheeling
diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
CHARACTERISTICS
SYMBOL
IF(AV)
VALUES
UNITS
Rectangular waveform
VRRM
15
A
35/45
V
IFSM
tp = 5 μs sine
690
A
VF
7.5 Apk, TJ = 125 °C
0.57
V
TJ
Range
- 65 to 150
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC reverse
voltage
VR
Maximum working
peak reverse voltage
VRWM
VS-MBR1535CTPbF
VS-MBR1535CT-N3
VS-MBR1545CTPbF
VS-MBR1545CT-N3
UNITS
35
35
45
45
V
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
Maximum average
forward current
per leg
per device
Maximum peak one cycle
non-repetitive surge
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
Revision: 29-Aug-11
IF(AV)
TEST CONDITIONS
UNITS
7.5
TC = 131 °C, rated VR
5 µs sine or 3 µs rect. pulse
IFSM
VALUES
15
Following any rated load
condition and with rated
VRRM applied
Surge applied at rated load condition half wave
single phase 60 Hz
690
A
150
EAS
TJ = 25 °C, IAS = 2 A, L = 3.5 mH
7
mJ
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
2
A
Document Number: 94285
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MBR15...CTPbF Series, VS-MBR15...CT-N3 Series
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Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
TJ = 25 °C
15 A
VFM (1)
Maximum forward voltage drop
7.5 A
TJ = 125 °C
15 A
Maximum instantaneous reverse current
IRM (1)
TJ = 25 °C
Rated DC voltage
TJ = 125 °C
VALUES
UNITS
0.84
V
0.57
0.72
0.1
15
mA
Maximum junction capacitance
CT
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
400
pF
Typical series inductance
LS
Measured from top of terminal to mounting plane
8.0
nH
10 000
V/µs
VALUES
UNITS
Maximum voltage rate of change
dV/dt
Rated VR
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction temperature range
TJ
- 65 to 150
Maximum storage temperature range
TStg
- 65 to 175
Maximum thermal resistance,
junction to case per leg
RthJC
DC operation
3.0
Typical thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth and greased
0.50
Maximum thermal resistance,
junction to ambient
RthJA
DC operation
Marking device
Revision: 29-Aug-11
°C/W
60
2
g
0.07
oz.
minimum
6 (5)
maximum
12 (10)
kgf · cm
(lbf · in)
Approximate weight
Mounting torque
°C
Case style TO-220AB
MBR1535CT
MBR1545CT
Document Number: 94285
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MBR15...CTPbF Series, VS-MBR15...CT-N3 Series
IF - Instantaneous Forward Current (A)
www.vishay.com
Vishay Semiconductors
100
10
IR - Reverse Current (mA)
100
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
TJ = 150 °C
10
TJ = 125 °C
1
TJ = 100 °C
TJ = 75 °C
0.1
TJ = 50 °C
0.01
TJ = 25 °C
0.001
1
0.0001
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
5
10
15
20
25
30
35
40
45
VFM - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
CT - Junction Capacitance (pF)
1000
TJ = 25 °C
100
10
0
20
30
50
40
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
10
1
0.1
0.01
0.001
0.00001
0.0001
PDM
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Single pulse
(thermal resistance)
0.001
0.01
t1
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
Revision: 29-Aug-11
Document Number: 94285
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MBR15...CTPbF Series, VS-MBR15...CT-N3 Series
www.vishay.com
Vishay Semiconductors
7
Average Power Loss (W)
Allowable Case Temperature (°C)
150
140
DC
Square wave (D = 0.50)
Rated VR applied
130
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
6
5
4
RMS limit
3
DC
2
1
See note (1)
0
120
0
2
4
6
8
10
2
0
12
4
6
8
10
12
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
IFSM - Non-Repetitive Surge Current (A)
IF(AV) - Average Forward Current (A)
1000
At any rated load condition
and with rated VRRM applied
following surge
100
10
100
1000
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR
Revision: 29-Aug-11
Document Number: 94285
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MBR15...CTPbF Series, VS-MBR15...CT-N3 Series
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS- MBR
1
2
15
45
CT
PbF
3
4
5
6
1
-
Vishay Semiconductors product
2
-
Schottky MBR series
3
-
Current rating (15 = 15 A)
4
-
Voltage ratings
5
-
CT = Essential part number
6
-
Environmental digit
35 = 35 V
45 = 45 V
PbF = Lead (Pb)-free and RoHS compliant
-N3 = Halogen-free, RoHS compliant, and totally lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-MBR1535CTPbF
50
1000
Antistatic plastic tube
VS-MBR1535CT-N3
50
1000
Antistatic plastic tube
VS-MBR1545CTPbF
50
1000
Antistatic plastic tube
VS-MBR1545CT-N3
50
1000
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
SPICE model
Revision: 29-Aug-11
www.vishay.com/doc?95222
TO-220AB PbF
TO-220AB -N3
www.vishay.com/doc?95225
www.vishay.com/doc?95028
www.vishay.com/doc?95294
Document Number: 94285
5
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
TO-220AB
DIMENSIONS in millimeters and inches
A
(6)
E
E2
ØP
0.014 M B A M
(7)
A
B
Seating
plane
A
Thermal pad
(E)
A1
1
Q
(6)
D
(H1)
H1
(7)
C
D2 (6)
(6) D
2 3
D
L1 (2)
C
Detail B
D1
3xb
1
2
3
3 x b2
Detail B
C
E1 (6)
L
Base metal
View A - A
c
Plating
c1 (4)
c
A
2x e
A2
e1
(b, b2)
b1, b3
(4)
Section C - C and D - D
0.015 M B A M
Lead assignments
Lead tip
Diodes
Conforms to JEDEC outline TO-220AB
1. - Anode/open
2. - Cathode
3. - Anode
SYMBOL
MILLIMETERS
MIN.
MAX.
4.25
4.65
1.14
1.40
2.56
2.92
0.69
1.01
0.38
0.97
1.20
1.73
1.14
1.73
0.36
0.61
0.36
0.56
14.85
15.25
8.38
9.02
11.68
12.88
INCHES
MIN.
MAX.
0.167
0.183
0.045
0.055
0.101
0.115
0.027
0.040
0.015
0.038
0.047
0.068
0.045
0.068
0.014
0.024
0.014
0.022
0.585
0.600
0.330
0.355
0.460
0.507
NOTES
A
A1
A2
b
b1
4
b2
b3
4
c
c1
4
D
3
D1
D2
6
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension and finish uncontrolled in L1
(3) Dimension D, D1 and E do not include mold flash. Mold flash
shall not exceed 0.127 mm (0.005") per side. These dimensions
are measured at the outermost extremes of the plastic body
(4) Dimension b1, b3 and c1 apply to base metal only
(5) Controlling dimensions: inches
(6) Thermal pad contour optional within dimensions E, H1, D2 and
E1
Document Number: 95222
Revision: 08-Mar-11
SYMBOL
E
E1
E2
e
e1
H1
L
L1
ØP
Q

(7)
(8)
MILLIMETERS
MIN.
MAX.
10.11
10.51
6.86
8.89
0.76
2.41
2.67
4.88
5.28
6.09
6.48
13.52
14.02
3.32
3.82
3.54
3.73
2.60
3.00
90° to 93°
INCHES
MIN.
MAX.
0.398
0.414
0.270
0.350
0.030
0.095
0.105
0.192
0.208
0.240
0.255
0.532
0.552
0.131
0.150
0.139
0.147
0.102
0.118
90° to 93°
NOTES
3, 6
6
7
6, 7
2
Dimensions E2 x H1 define a zone where stamping and
singulation irregularities are allowed
Outline conforms to JEDEC TO-220, except A2 (maximum) and
D2 (minimum) where dimensions are derived from the actual
package outline
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
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Revision: 12-Mar-12
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Document Number: 91000
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