ON MJ11032 Complementary silicon darlington power transistor Datasheet

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SEMICONDUCTOR TECHNICAL DATA
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. . . for use as output devices in complementary general purpose amplifier applications.
• High DC Current Gain — hFE = 1000 (Min) @ IC = 25 Adc
hFE = 400 (Min) @ IC = 50 Adc
• Curves to 100 A (Pulsed)
• Diode Protection to Rated IC
• Monolithic Construction with Built–In Base–Emitter Shunt Resistor
• Junction Temperature to + 200_C
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v
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*Motorola Preferred Device
MAXIMUM RATINGS
Symbol
MJ11028
MJ11029
MJ11030
MJ11031
MJ11032
MJ11033
Unit
VCEO
60
90
120
Vdc
Collector–Base Voltage
VCB
60
90
120
Vdc
Emitter–Base Voltage
VEB
5
Vdc
Collector Current — Continuous
Peak
IC
ICM
50
100
Adc
Base Current — Continuous
IB
2
Adc
Total Power Dissipation @ TC = 25_C
Derate above 25_C @ TC = 100_C
PD
300
1.71
Watts
W/_C
TJ, Tstg
– 55 to + 200
_C
Rating
Collector–Emitter Voltage
Operating and Storage Junction
Temperature Range
50 AMPERE
COMPLEMENTARY
SILICON
DARLINGTON
POWER TRANSISTORS
60 – 120 VOLTS
300 WATTS
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
TL
275
_C
RθJC
0.584
_C
COLLECTOR
NPN
MJ11028
MJ11030
MJ11032
Maximum Lead Temperature for
Soldering Purposes for
10 seconds
Thermal Resistance Junction to Case
PNP
MJ11029
MJ11031
MJ11033
BASE
CASE 197A–05
TO–204AE (TO–3)
COLLECTOR
BASE
≈ 3.0 k
≈ 25
≈ 3.0 k
EMITTER
≈ 25
EMITTER
Figure 1. Darlington Circuit Schematic
Preferred devices are Motorola recommended choices for future use and best overall value.
 Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
1
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v
v
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
V(BR)CEO
60
90
120
—
—
—
Vdc
—
—
—
—
—
—
2
2
2
10
10
10
—
5
mAdc
—
2
mAdc
1k
400
18 k
—
—
—
2.5
3.5
—
—
3.0
4.5
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (1)
(IC = 1 00 mAdc, IB = 0)
MJ11028, MJ11029
MJ11030, MJ11031
MJ11032, MJ11033
Collector–Emitter Leakage Current
(VCE = 60 Vdc, RBE = 1 k ohm)
(VCE = 90 Vdc, RBE = 1 k ohm)
(VCE = 120 Vdc, RBE = 1 k ohm)
(VCE = 60 Vdc, RBE = 1 k ohm, TC = 150_C)
(VCE = 90 Vdc, RBE = 1 k ohm, TC = 150_C)
(VCE = 120 Vdc, RBE = 1 k ohm, TC = 150_C)
MJ11028, MJ11029
MJ11030, MJ11031
MJ11032, MJ11033
MJ11028, MJ11029
MJ11030, MJ11031
MJ11032, MJ11033
ICER
Emitter Cutoff Current (VBE = 5 Vdc, IC = 0)
IEBO
ICEO
Collector–Emitter Leakage Current (VCE = 50 Vdc, IB = 0)
mAdc
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 25 Adc, VCE = 5 Vdc)
(IC = 50 Adc, VCE = 5 Vdc)
Collector–Emitter Saturation Voltage
(IC = 25 Adc, IB = 250 mAdc)
(IC = 50 Adc, IB = 500 mAdc)
hFE
VCE(sat)
Base–Emitter Saturation Voltage
(IC = 25 Adc, IB = 200 mAdc)
(IC = 50 Adc, IB = 300 mAdc)
Vdc
VBE(sat)
300 µs, Duty Cycle
(1) Pulse Test: Pulse Width
—
Vdc
2.0%.
IC, COLLECTOR CURRENT (AMP)
100
There are two limitations on the power–handling ability of a
transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 2 is based on T J(pk) = 200_C; TC is
variable depending on conditions. At high case temperatures, thermal limitations will reduce the power that can be
handled to values less than the limitations imposed by second breakdown.
50
20
10
5
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
SECOND BREAKDOWN LIMITED
2
1
MJ11028, 29
MJ11030, 31
MJ11032, 33
0.5
0.2
0.1
0.2
0.5
1
2
5
10 20
50 100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
200
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 2. DC Safe Operating Area
100 k
VCE = 5 V
TJ = 25°C
hFE, DC CURRENT GAIN
50 k
20 k
10 k
5k
2k
MJ11029, MJ11031, MJ11033 PNP
MJ11028, MJ11030, MJ11032 NPN
1k
500
80 µs
(PULSED)
200
100
2
1
2
5
10
20
50
100
5
MJ11029, MJ11031, MJ11033 PNP
MJ11028, MJ11030, MJ11032 NPN
4
3
TJ = 25°C
IC/IB = 100
VBE(sat)
2
1
0
1
VCE(sat)
2 3
80 µs
(PULSED)
5
10
20
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 3. DC Current Gain
Figure 4. “On” Voltage
50
Motorola Bipolar Power Transistor Device Data
100
PACKAGE DIMENSIONS
A
N
C
–T–
E
D
K
2 PL
0.30 (0.012)
U
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
T Q
M
M
Y
M
–Y–
L
2
H
G
B
M
T Y
1
–Q–
0.25 (0.010)
M
DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V
INCHES
MIN
MAX
1.530 REF
0.990
1.050
0.250
0.335
0.057
0.063
0.060
0.070
0.430 BSC
0.215 BSC
0.440
0.480
0.665 BSC
0.760
0.830
0.151
0.165
1.187 BSC
0.131
0.188
MILLIMETERS
MIN
MAX
38.86 REF
25.15
26.67
6.35
8.51
1.45
1.60
1.53
1.77
10.92 BSC
5.46 BSC
11.18
12.19
16.89 BSC
19.31
21.08
3.84
4.19
30.15 BSC
3.33
4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
CASE 197A–05
TO–204AE (TO–3)
ISSUE J
Motorola Bipolar Power Transistor Device Data
3
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4
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Motorola Bipolar Power Transistor Device Data
*MJ11028/D*
MJ11028/D
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