PHILIPS BU2520AX Silicon diffused power transistor Datasheet

Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2520AX
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in
horizontal deflection circuits of large screen colour television receivers up to 32 kHz.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
Ptot
VCEsat
ICsat
tf
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Fall time
VBE = 0 V
PINNING - SOT399
PIN
1
base
2
collector
3
emitter
case isolated
MAX.
UNIT
6.0
0.2
1500
800
10
25
45
5.0
0.35
V
V
A
A
W
V
A
µs
Ths ≤ 25 ˚C
IC = 6.0 A; IB = 1.2 A
ICsat = 6.0 A; IB(end) = 0.85 A
PIN CONFIGURATION
DESCRIPTION
TYP.
SYMBOL
c
case
b
e
1 2 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
-IB(AV)
-IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value 1
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
average over any 20 ms period
Ths ≤ 25 ˚C
MIN.
MAX.
UNIT
-55
-
1500
800
10
25
6
9
150
6
45
150
150
V
V
A
A
A
A
mA
A
W
˚C
˚C
TYP.
MAX.
UNIT
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
Rth j-hs
Junction to heatsink
without heatsink compound
-
3.7
K/W
Rth j-hs
Junction to heatsink
with heatsink compound
-
2.8
K/W
Rth j-a
Junction to ambient
in free air
35
-
K/W
1 Turn-off current.
September 1997
1
Rev 2.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2520AX
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
Visol
Repetitive peak voltage from all
three terminals to external
heatsink
R.H. ≤ 65 % ; clean and dustfree
Cisol
Capacitance from T2 to external f = 1 MHz
heatsink
MIN.
TYP.
-
MAX.
UNIT
2500
V
-
22
-
pF
MIN.
TYP.
MAX.
UNIT
-
-
1.0
2.0
mA
mA
7.5
800
13.5
-
1.0
-
mA
V
V
5
13
7
5.0
1.1
9.5
V
V
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2
ICES
ICES
Collector cut-off current
IEBO
BVEBO
VCEOsust
Emitter cut-off current
Emitter-base breakdown voltage
Collector-emitter sustaining voltage
VCEsat
VBEsat
hFE
hFE
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax;
Tj = 125 ˚C
VEB = 7.5 V; IC = 0 A
IB = 1 mA
IB = 0 A; IC = 100 mA;
L = 25 mH
IC = 6.0 A; IB = 1.2 A
IC = 6.0 A; IB = 1.2 A
IC = 100 mA; VCE = 5 V
IC = 6 A; VCE = 5 V
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Cc
Collector capacitance
IE = 0 A; VCB = 10 V; f = 1 MHz
115
-
pF
Switching times (32 kHz line
deflection circuit)
ICsat = 6.0 A; LC = 330 µH; Cfb = 9 nF;
IB(end) = 0.85 A; LB = 3.45 µH;
-VBB = 4 V; (-dIB/dt = 1.2 A / µs)
3.0
0.2
4.0
0.35
µs
µs
4.5
0.35
5.5
0.5
µs
µs
ts
tf
Turn-off storage time
Turn-off fall time
Switching times (16 kHz line
deflection circuit)
ts
tf
ICsat = 6.0 A; LC = 650 µH; Cfb = 19 nF;
IB(end) = 1.0 A; LB = 5.3 µH; -VBB = 4 V;
(-dIB/dt = 0.8 A / µs)
Turn-off storage time
Turn-off fall time
2 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 2.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2520AX
ICsat
TRANSISTOR
+ 50v
IC
100-200R
DIODE
t
IBend
IB
Horizontal
t
Oscilloscope
10us
13us
Vertical
32us
1R
100R
VCE
6V
30-60 Hz
t
Fig.1. Test circuit for VCEOsust.
Fig.4. Switching times waveforms (32 kHz).
IC / mA
ICsat
90 %
IC
250
10 %
200
tf
t
ts
IB
IBend
100
t
0
VCE / V
min
VCEOsust
- IBM
Fig.2. Oscilloscope display for VCEOsust.
TRANSISTOR
IC
Fig.5. Switching times definitions.
ICsat
+ 150 v nominal
adjust for ICsat
DIODE
t
Lc
IBend
IB
t
20us
26us
IBend
64us
VCE
LB
T.U.T.
Cfb
-VBB
t
Fig.6. Switching times test circuit.
Fig.3. Switching times waveforms (16 kHz).
September 1997
3
Rev 2.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
100
BU2520AX
hFE
VBESAT / V
1.2
Tj = 25 C
Tj = 25 C
5V
Tj = 125 C
1.1
Tj = 125 C
1
0.9
10
1V
IC=
0.8
8A
6A
5A
4A
0.7
1
0.6
0.1
10
1
0
100
1
2
IB / A
IC / A
Fig.7. Typical DC current gain. hFE = f (IC)
parameter VCE
1.2
4
Fig.10. Typical base-emitter saturation voltage.
VBEsat = f (IB); parameter IC
VBESAT / V
1.1
3
VCESAT / V
10
Tj = 25 C
Tj = 25 C
Tj = 125 C
Tj = 125 C
1
0.9
8A
0.8
1
6A
IC/IB=
0.7
5A
3
0.6
4
0.5
IC = 4 A
5
0.4
0.1
0.1
1
IC / A
10
0.1
Fig.8. Typical base-emitter saturation voltage.
VBEsat = f (IC); parameter IC/IB
1
1
IB / A
10
Fig.11. Typical collector-emitter saturation voltage.
VCEsat = f (IB); parameter IC
VCESAT / V
1000
Eoff / uJ
IC/IB =
0.9
5
0.8
IC = 6 A
4
0.7
32 kHz
3
0.6
16 kHz
5A
100
0.5
Tj = 25 C
0.4
Tj = 125 C
0.3
0.2
0.1
10
0
0.1
10
1
0.1
100
IC / A
Fig.9. Typical collector-emitter saturation voltage.
VCEsat = f (IC); parameter IC/IB
September 1997
1
IB / A
10
Fig.12. Typical turn-off losses. Tj = 85˚C
Eoff = f (IB); parameter IC; parameter frequency
4
Rev 2.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
12
11
10
9
8
7
6
5
4
3
2
1
0
BU2520AX
ts, tf / us
100
90
80
70
60
IC =
50
6A
40
30
5A
20
tf
10
0
0.1
1
IB / A
0
10
20
40
60
80
Ths / C
100
120
140
Fig.15. Normalised power dissipation.
PD% = 100⋅PD/PD 25˚C = f (Ths)
Fig.13. Typical collector storage and fall time.
ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C; f = 16 kHz
12
11
10
9
8
7
6
5
4
3
2
1
0
with heatsink compound
110
ts
16 kHz
Normalised Power Derating
PD%
120
ts, tf / us
10
Zth / (K/W)
32 kHz
1
ts
0.1
6A
0.1
1
IB / A
PD
0.01
tf
D=0
0.001
1E-06
10
Fig.14. Typical collector storage and fall time.
ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C; f = 32 kHz
September 1997
0.2
0.1
0.05
0.02
IC =
5A
0.5
tp
D=
t
T
1E-04
1E-02
t/s
tp
T
1E+00
Fig.16. Transient thermal impedance.
Zth j-hs = f(t); parameter D = tp/T
5
Rev 2.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
IC / A
BU2520AX
BU2520AF
100
tp =
ICM
= 0.01
30 us
ICDC
10
100 us
Ptot
1
1 ms
0.1
10 ms
DC
0.01
1
10
100
1000
VCE / V
Fig.17. Forward bias safe operating area. Ths = 25 ˚C
ICDC & ICM = f(VCE); ICM single pulse; parameter tp
Second-breakdown limits independant of temperature.
Mounted with heatsink compound.
September 1997
6
Rev 2.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2520AX
MECHANICAL DATA
Dimensions in mm
5.8 max
16.0 max
Net Mass: 5.88 g
3.0
0.7
4.5
3.3
10.0
27
max
25
25.1
25.7
22.5
max
5.1
2.2 max
18.1
min
4.5
1.1
0.4 M
2
0.95 max
5.45
5.45
3.3
Fig.18. SOT399; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
September 1997
7
Rev 2.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2520AX
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
September 1997
8
Rev 2.200
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