Freescale MRF6S21060NR1 Rf power field effect transistors n-channel enhancement-mode lateral mosfet Datasheet

Freescale Semiconductor
Technical Data
Document Number: MRF6S21060N
Rev. 4, 12/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for W- CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be us ed in Clas s AB for PCN - PCS/c ellular radio, WLL and
TD - SCDMA applications.
• Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts,
IDQ = 610 mA, Pout = 14 Watts Avg., Full Frequency Band, Channel
Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 15.5 dB
Drain Efficiency — 26%
IM3 @ 10 MHz Offset — - 37 dBc in 3.84 MHz Bandwidth
ACPR @ 5 MHz Offset — - 40 dBc in 3.84 MHz Bandwidth
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 60 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
• 200_C Capable Plastic Package
• N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MRF6S21060NR1
MRF6S21060NBR1
2110 - 2170 MHz, 14 W AVG., 28 V
2 x W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRF6S21060NR1
CASE 1484 - 04, STYLE 1
TO - 272 WB - 4
PLASTIC
MRF6S21060NBR1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
VDSS
- 0.5, +68
Vdc
Gate - Source Voltage
VGS
- 0.5, +12
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Value (1,2)
Unit
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 79°C, 60 W CW
Case Temperature 76°C, 14 W CW
RθJC
0.89
1.04
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6S21060NR1 MRF6S21060NBR1
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1B (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
Package Peak Temperature
Unit
3
260
°C
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 200 μAdc)
VGS(th)
1.5
2.2
2.5
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 610 mAdc)
VGS(Q)
2
2.8
4
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 2.0 Adc)
VDS(on)
—
0.3
—
Vdc
Crss
—
1.5
—
pF
Off Characteristics
On Characteristics (DC)
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 610 mA, Pout = 14 W Avg., f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in
3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01%
Probability on CCDF.
Power Gain
Gps
13.5
15.5
16.5
dB
Drain Efficiency
ηD
24.5
26
—
%
Intermodulation Distortion
IM3
—
- 37
- 35
dBc
ACPR
—
- 40
- 38
dBc
IRL
—
- 14
- 10
dB
Adjacent Channel Power Ratio
Input Return Loss
1. Part is internally matched both on input and output.
MRF6S21060NR1 MRF6S21060NBR1
2
RF Device Data
Freescale Semiconductor
R1
VBIAS
VSUPPLY
R2
C6
C1
C2
C3
Z6
C4
C5
Z15
RF
INPUT
R3
Z1
Z2
Z3
Z4
Z5
Z8
Z9
Z10
Z11
Z12
Z7
Z13
Z14
RF
OUTPUT
C8
Z16
C7
DUT
VSUPPLY
C9
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
0.250″ x 0.080″ Microstrip
0.860″ x 0.080″ Microstrip
0.300″ x 0.405″ Microstrip
0.350″ x 0.080″ Microstrip
0.350″ x 0.755″ Microstrip
0.680″ x 0.080″ Microstrip
0.115″ x 0.755″ Microstrip
0.115″ x 1.000″ Microstrip
0.240″ x 1.000″ Microstrip
Z10
Z11
Z12
Z13
Z14
Z15
Z16
PCB
C10
C11
0.270″ x 0.300″ Microstrip
0.230″ x 0.080″ Microstrip
0.310″ x 0.300″ Microstrip
0.830″ x 0.080″ Microstrip
0.200″ x 0.080″ Microstrip
1.000″ x 0.080″ Microstrip
1.100″ x 0.070″ Microstrip
Arlon AD250, 0.030″, εr = 2.5
Figure 1. MRF6S21060NR1(NBR1) Test Circuit Schematic
Table 6. MRF6S21060NR1(NBR1) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
100 nF Chip Capacitor
CDR33BX104AKYS
Kemet
C2, C7
4.7 pF Chip Capacitors
ATC100B4R7BT500XT
ATC
C3, C8, C9
6.8 pF Chip Capacitors
ATC100B6R8BT500XT
ATC
C4, C5, C6, C10, C11
10 μF, 35 V Chip Capacitors
GRM55DR61H106KA88L
Murata
R1
1 k, 1/4 W Chip Resistor
CRCW12061000FKTA
Vishay
R2
10 k, 1/4 W Chip Resistor
CRCW12061001FKTA
Vishay
R3
10 1/4 W Chip Resistor
CRCW120610R0FKTA
Vishay
MRF6S21060NR1 MRF6S21060NBR1
RF Device Data
Freescale Semiconductor
3
R1
C4
R2
C6
C1
C2
C5
C3
CUT OUT AREA
R3
C7
C8
C9
C10 C11
MRF6S21060N Rev. 3
Figure 2. MRF6S21060NR1(NBR1) Test Circuit Component Layout
MRF6S21060NR1 MRF6S21060NBR1
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
28
26
VDD = 28 Vdc, Pout = 14 W (Avg.)
IDQ = 610 mA, 2−Carrier W−CDMA
10 MHz Carrier Spacing, 3.84 MHz
Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
15.4
15.2
15
27
25
Gps
24
−36
IM3
14.8
−38
14.6
−40
14.4
−42
IRL
14.2
14
2060
2080
2100
IM3 (dBc), ACPR (dBc)
Gps, POWER GAIN (dB)
15.6
2120
ACPR
2140
2160
−44
2180
−46
2220
2200
−5
−10
−15
−20
−25
IRL, INPUT RETURN LOSS (dB)
ηD
15.8
ηD, DRAIN
EFFICIENCY (%)
16
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier W - CDMA Broadband Performance @ Pout = 14 Watts Avg.
ηD
Gps, POWER GAIN (dB)
15.2
38
37
VDD = 28 Vdc, Pout = 28 W (Avg.)
IDQ = 610 mA, 2−Carrier W−CDMA
10 MHz Carrier Spacing, 3.84 MHz
Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
15
14.8
36
−26
14.6
−28
IM3
14.4
IRL
−30
14.2
ACPR
−32
14
2060
2080
2100
2120
2140
2160
2180
2200
−6
−34
2220
−9
−12
−15
−18
−21
−24
IRL, INPUT RETURN LOSS (dB)
15.4
ηD, DRAIN
EFFICIENCY (%)
39
Gps
IM3 (dBc), ACPR (dBc)
15.6
f, FREQUENCY (MHz)
Figure 4. 2 - Carrier W - CDMA Broadband Performance @ Pout = 28 Watts Avg.
17
−10
763 mA
16
Gps, POWER GAIN (dB)
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
IDQ = 915 mA
610 mA
15
458 mA
14
305 mA
13
12
VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two −Tone Measurements, 10 MHz Tone Spacing
11
VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two −Tone Measurements, 10 MHz Tone Spacing
−20
−30
IDQ = 305 mA
915 mA
−40
−50
458 mA
763 mA
610 mA
−60
1
10
100
200
1
10
100
200
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6S21060NR1 MRF6S21060NBR1
RF Device Data
Freescale Semiconductor
5
−10
57
VDD = 28 Vdc, Pout = 60 W (PEP), IDQ = 610 mA
Two −Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
−30
55
Pout, OUTPUT POWER (dBm)
−20
3rd Order
−40
5th Order
7th Order
−50
Ideal
P3dB = 49.986 dBm (99.68 W)
53
P1dB = 49.252 dBm (84.18 W)
51
Actual
49
47
VDD = 28 Vdc, IDQ = 610 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 2140 MHz
45
−60
0.1
43
1
28
100
10
30
32
34
36
38
40
TWO −TONE SPACING (MHz)
Pin, INPUT POWER (dBm)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
Figure 8. Pulse CW Output Power versus
Input Power
60
50
40
0
VDD = 28 Vdc, IDQ = 610 mA
f1 = 2135 MHz, f2 = 2145 MHz
2−Carrier W−CDMA, 10 MHz Carrier
Spacing, 3.84 MHz Channel
Bandwidth, PAR = 8.5 dB @ 0.01%
Probability (CCDF)
TC = −30_C
ηD
25_C
85_C
IM3
−10
25_C −20
−30_C
30
−30
ACPR
20
Gps
−40
−30_C
25_C −50
85_C
10
IM3 (dBc), ACPR (dBc)
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
IMD, INTERMODULATION DISTORTION (dBc)
TYPICAL CHARACTERISTICS
0
−60
10
1
100
200
Pout, OUTPUT POWER (WATTS) AVG.
Figure 9. 2 - Carrier W - CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
17
25_C
50
85_C
15
85_C
40
14
12
ηD
VDD = 28 Vdc
IDQ = 610 mA
f = 2140 MHz
30
20
11
10
1
IDQ = 610 mA
f = 2140 MHz
10
100
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
200
15
Gps, POWER GAIN (dB)
Gps, POWER GAIN (dB)
25_C
ηD, DRAIN EFFICIENCY (%)
−30_C 60
16
13
16
70
Gps
TC = −30_C
14
13
12
10
11
0
10
32 V
28 V
16 V
24 V
20 V
VDD = 12 V
0
20
40
60
80
100
120
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain versus Output Power
MRF6S21060NR1 MRF6S21060NBR1
6
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
MTTF FACTOR (HOURS x AMPS2)
109
108
107
106
90 100 110 120 130 140 150 160 170 180 190 200 210
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
Figure 12. MTTF Factor versus Junction Temperature
W - CDMA TEST SIGNAL
100
+20
3.84 MHz
Channel BW
+30
0
−10
1
(dB)
PROBABILITY (%)
10
0.1
W−CDMA. ACPR Measured in 3.84 MHz Channel
Bandwidth @ ±5 MHz Offset. IM3 Measured in
3.84 MHz Bandwidth @ ±10 MHz Offset. PAR =
8.5 dB @ 0.01% Probability on CCDF
0.01
−50
4
6
−70
−ACPR in
+ACPR in
3.84 MHz BW 3.84 MHz BW
−IM3 in
3.84 MHz BW
−80
−25
−20
−60
0.0001
2
−30
−40
0.001
0
−20
8
10
PEAK −TO−AVERAGE (dB)
Figure 13. CCDF W - CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single - Carrier Test Signal
−15
−10
−5
0
5
10
+IM3 in
3.84 MHz BW
15
20
25
f, FREQUENCY (MHz)
Figure 14. 2-Carrier W-CDMA Spectrum
MRF6S21060NR1 MRF6S21060NBR1
RF Device Data
Freescale Semiconductor
7
Zo = 10 Ω
f = 2110 MHz
Zload
f = 2110 MHz
Zsource
f = 2170 MHz
f = 2170 MHz
VDD = 28 Vdc, IDQ = 610 mA, Pout = 14 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
2110
7.59 - j8.39
3.31 - j5.35
2140
6.71 - j8.83
3.17 - j5.16
2170
5.84 - j8.62
3.06 - j4.92
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 15. Series Equivalent Source and Load Impedance
MRF6S21060NR1 MRF6S21060NBR1
8
RF Device Data
Freescale Semiconductor
TD - SCDMA CHARACTERIZATION
R1
VBIAS
VSUPPLY
R2
C6
C1
C2
C3
Z9
C4
C5
Z17
RF
INPUT
R3
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z10
Z11
Z12
Z13
Z14
Z15
Z8
Z16
RF
OUTPUT
C8
Z18
C7
DUT
VSUPPLY
C9
Z1
Z2
Z3*
Z4
Z5*
Z6
Z7
Z8
Z9
Z10
0.250″ x 0.080″ Microstrip
0.129″ x 0.080″ Microstrip
0.565″ x 0.258″ Microstrip
0.160″ x 0.080″ Microstrip
0.300″ x 0.455″ Microstrip
0.350″ x 0.080″ Microstrip
0.350″ x 0.755″ Microstrip
0.115″ x 0.755″ Microstrip
0.680″ x 0.080″ Microstrip
0.115″ x 1.000″ Microstrip
Z11
Z12*
Z13
Z14*
Z15
Z16
Z17
Z18
PCB
C10
C11
0.240″ x 1.000″ Microstrip
0.270″ x 0.360″ Microstrip
0.230″ x 0.080″ Microstrip
0.588″ x 0.290″ Microstrip
0.595″ x 0.080″ Microstrip
0.200″ x 0.080″ Microstrip
0.935″ x 0.080″ Microstrip
0.955″ x 0.080″ Microstrip
Arlon AD250, 0.030″, εr = 2.5
* Copper foil tape soldered onto PCB
Figure 16. MRF6S21060NR1(NBR1) Test Circuit Schematic — TD - SCDMA
Table 7. MRF6S21060NR1(NBR1) Test Circuit Component Designations and Values — TD - SCDMA
Part
Description
Part Number
Manufacturer
C1
100 nF Chip Capacitor
CDR33BX104AKYS
Kemet
C2, C7
4.7 pF Chip Capacitors
ATC100B4R7BT500XT
ATC
C3, C8, C9
6.8 pF Chip Capacitors
ATC100B6R8BT500XT
ATC
C4, C5, C6, C10, C11
10 μF, 35 V Chip Capacitors
GRM55DR61H106KA88L
Murata
R1
1 k, 1/4 W Chip Resistor
CRCW12061000FKTA
Vishay
R2
10 k, 1/4 W Chip Resistor
CRCW12061001FKTA
Vishay
R3
10 1/4 W Chip Resistor
CRCW120610R0FKTA
Vishay
MRF6S21060NR1 MRF6S21060NBR1
RF Device Data
Freescale Semiconductor
9
R1
C4
R2 C6
C1
C5
C3
C2
CUT OUT AREA
R3
C7
C8
C9
C10 C11
MRF6S21060N Rev. 3
Figure 17. MRF6S21060NR1(NBR1) Test Circuit Component Layout — TD - SCDMA
MRF6S21060NR1 MRF6S21060NBR1
10
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
0
30
3−Carrier TD−SCDMA
VDD = 28 V, IDQ = 555 mA
f = 2017.5 MHz
25
ηD
−20
20
Adj −U
−30
Adj −L
15
10
−40
Alt−L
−50
5
ηD, DRAIN EFFICIENCY (%)
ALT/ACPR (dBc)
−10
Alt−U
−60
0
0
2
1
3
4
5
6
7
8
9
Pout, OUTPUT POWER (WATTS) AVG.
Figure 18. 3 - Carrier TD - SCDMA ACPR, ALT and
Drain Efficiency versus Output Power
−18
25
ALT/ACPR (dBc)
−26
20
ηD
15
−34
Adj −U
Adj −L
−42
10
Alt−L
−50
5
ηD, DRAIN EFFICIENCY (%)
6−Carrier TD−SCDMA
VDD = 28 V, IDQ = 560 mA
f = 2017.5 MHz
Alt−U
−58
0.5
0
1.5
2.5
3.5
4.5
5.5
6.5
7.5
Pout, OUTPUT POWER (WATTS) AVG.
Figure 19. 6 - Carrier TD - SCDMA ACPR, ALT and
Drain Efficiency versus Output Power
TD - SCDMA TEST SIGNAL
−30
−30
1.28 MHz
Channel BW
−40
−50
−50
−60
−70
+ALT2 in
1.28 MHz BW
+3.2 MHz Offset
−ALT2 in
1.28 MHz BW
−3.2 MHz Offset
−80
−90
−100
−ALT2 in
1.28 MHz BW
−3.2 MHz Offset
+ALT2 in
1.28 MHz BW
+3.2 MHz Offset
−100
−110
−120
(dBm)
(dBm)
−90
VBW = 300 kHz
Sweep Time = 200 ms
RBW = 30 kHz
−60
−70
−80
1.28 MHz
Channel BW
−40
VBW = 300 kHz
Sweep Time = 200 ms
RBW = 30 kHz
−110
+ALT1 in
1.28 MHz BW
+1.6 MHz Offset
−ALT1 in
1.28 MHz BW
−1.6 MHz Offset
−130
Center 2.0175 GHz
1.5 MHz
Span 15 MHz
f, FREQUENCY (MHz)
Figure 20. 3 - Carrier TD - SCDMA Spectrum
−120
−ALT1 in
1.28 MHz BW
−1.6 MHz Offset
−130
Center 2.0175 GHz
+ALT1 in
1.28 MHz BW
+1.6 MHz Offset
2.5 MHz
Span 25 MHz
f, FREQUENCY (MHz)
Figure 21. 6 - Carrier TD - SCDMA Spectrum
MRF6S21060NR1 MRF6S21060NBR1
RF Device Data
Freescale Semiconductor
11
Zo = 10 Ω
Zload
f = 1950 MHz
f = 2070 MHz
f = 2070 MHz
f = 1950 MHz
Zin
VDD = 28 Vdc, IDQ = 560 mA
Zin
f
MHz
Zin
W
Zload
W
1950
2.227 - j9.127
3.341 - j8.372
1960
2.168 - j8.942
3.239 - j8.218
1970
2.124 - j8.757
3.168 - j8.084
1980
2.073 - j8.606
3.083 - j7.966
1990
2.031 - j8.447
3.009 - j7.865
2000
1.987 - j8.306
2.929 - j7.743
2010
1.940 - j8.155
2.845 - j7.639
2020
1.911 - j8.000
2.775 - j7.529
2030
1.891 - j7.835
2.696 - j7.410
2040
1.856 - j7.711
2.615 - j7.309
2050
1.831 - j7.589
2.549 - j7.207
2060
1.808 - j7.461
2.479 - j7.086
2070
1.782 - j7.325
2.422 - j6.983
= Device input impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Output
Matching
Network
Device
Under Test
Z
in
Z
load
Figure 22. Series Equivalent Input and Load Impedance — TD - SCDMA
MRF6S21060NR1 MRF6S21060NBR1
12
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
E1
B
A
2X
E3
GATE LEAD
DRAIN LEAD
D
D1
4X
e
4X
b1
aaa M C A
2X
2X
D2
c1
E
H
DATUM
PLANE
F
ZONE J
A
A1
2X
A2
E2
NOTE 7
E5
E4
4
D3
3
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ÇÇÇÇÇÇ
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ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
E5
BOTTOM VIEW
C
SEATING
PLANE
PIN 5
NOTE 8
1
2
CASE 1486 - 03
ISSUE C
TO - 270 WB - 4
PLASTIC
MRF6S21060NR1
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
3. DATUM PLANE −H− IS LOCATED AT THE TOP OF
LEAD AND IS COINCIDENT WITH THE LEAD
WHERE THE LEAD EXITS THE PLASTIC BODY AT
THE TOP OF THE PARTING LINE.
4. DIMENSIONS “D" AND “E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS “D" AND “E1" DO
INCLUDE MOLD MISMATCH AND ARE DETER−
MINED AT DATUM PLANE −H−.
5. DIMENSION “b1" DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE “b1" DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. DATUMS −A− AND −B− TO BE DETERMINED AT
DATUM PLANE −H−.
7. DIMENSION A2 APPLIES WITHIN ZONE “J" ONLY.
8. HATCHING REPRESENTS THE EXPOSED AREA
OF THE HEAT SLUG.
DIM
A
A1
A2
D
D1
D2
D3
E
E1
E2
E3
E4
E5
F
b1
c1
e
aaa
INCHES
MIN
MAX
.100
.104
.039
.043
.040
.042
.712
.720
.688
.692
.011
.019
.600
−−−
.551
.559
.353
.357
.132
.140
.124
.132
.270
−−−
.346
.350
.025 BSC
.164
.170
.007
.011
.106 BSC
.004
STYLE 1:
PIN 1.
2.
3.
4.
5.
MILLIMETERS
MIN
MAX
2.54
2.64
0.99
1.09
1.02
1.07
18.08
18.29
17.48
17.58
0.28
0.48
15.24
−−−
14
14.2
8.97
9.07
3.35
3.56
3.15
3.35
6.86
−−−
8.79
8.89
0.64 BSC
4.17
4.32
0.18
0.28
2.69 BSC
0.10
DRAIN
DRAIN
GATE
GATE
SOURCE
MRF6S21060NR1 MRF6S21060NBR1
RF Device Data
Freescale Semiconductor
13
MRF6S21060NR1 MRF6S21060NBR1
14
RF Device Data
Freescale Semiconductor
MRF6S21060NR1 MRF6S21060NBR1
RF Device Data
Freescale Semiconductor
15
MRF6S21060NR1 MRF6S21060NBR1
16
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
4
Dec. 2006
Description
• Added “TD - SCDMA” to data sheet description, p. 1
• Updated Part Numbers in Table 6, Component Designations and Values, to RoHS compliant
part numbers, p. 3
• Added TD - SCDMA test circuit schematic, component designations and values, component
layout, typical characteristic curves, test signal and series impedance, p. 9 - 12
• Added Product Documentation and Revision History, p. 17
MRF6S21060NR1 MRF6S21060NBR1
RF Device Data
Freescale Semiconductor
17
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MRF6S21060NR1 MRF6S21060NBR1
Document Number: MRF6S21060N
Rev. 4, 12/2006
18
RF Device Data
Freescale Semiconductor
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