NEC NE900000G Ku-band medium power gaas mesfet Datasheet

NE9000 SERIES
NE9001 SERIES
NE9002 SERIES
Ku-BAND MEDIUM
POWER GaAs MESFET
FEATURES
•
TYPICAL LINEAR GAIN vs. FREQUENCY
CLASS A OPERATION
HIGH OUTPUT POWER
POUT = 26.5 dBm
G1dB = 7 dB
24
21
HIGH POWER ADDED EFFICIENCY
Linear Gain (dB)
•
•
DESCRIPTION
The NE9000, NE9001, and NE9002 are 0.5 micron recessed
gate medium power GaAs FETs for commercial and space
amplifier and oscillator applications to 20 GHz. Chip configurations available are: the NE900000, a one cell die of 400 µm
gate width; the NE900100, a one cell die of 750 µm gate
width; and the NE900200, a two cell die of 1500 µm total gate
width. The series is available in chip form or a variety of
hermetic ceramic packages. The NE900000, NE900100,
and NE900200 are standard die without wrap-around sourcemetallization, while the NE900000G, NE900100G, and
NE900200G have wrap-around source metallization. The
series is space qualified.
18
NE9000
15
12
NE9001/9002
9
6
3
2.0
10.0
Frequency (GHz)
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
SYMBOLS
IDSS
VP
gm
RTH (C-C)
PT
PTEST
P1dB
G1dB
ηADD
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
Saturated Drain Current at
VDS = 2.5 V, VGS = 0
Pinch-off Voltage at VDS = 2.5 V,
IDS = 2.5 mA
IDS = 5 mA
IDS = 10 mA
Transconductance at VDS = 2.5 V,
IDS = 50 mA
IDS = 90 mA
IDS = 180 mA
Thermal Resistance (Channel-to-Case)
Total Power Dissipation
Power Output at Test Point
PIN = 11 dBm, VDS = 8V, ID = 50mA,
f = 8 GHz
PIN = 12 dBm,VDS = 8V, ID = 50mA
f = 14.5 GHz
PIN = 15 dBm, VDS = 8V, ID = 90mA
f = 14.5 GHz
PIN = 19 dBm, VDS = 8 V, ID = 180 mA,
f = 14.5
Output Power at 1 dB Compression
Point,
VDS = 8 V, ID = 50 mA, f = 8 GHz
VDS = 8 V, ID = 50 mA, f = 14.5 GHz
VDS = 8 V, ID = 90 mA, f = 14.5 GHz
VDS = 8 V, ID = 180 mA, f = 14.5 GHz
Gain at 1 dB Compression Point
VDS = 8 V, ID = 50 mA, f = 8 GHz
VDS = 8 V, ID = 50 mA, f = 14.5 GHz
VDS = 8 V, ID = 90 mA, f = 14.5 GHz
VDS = 8 V, ID = 180 mA, f = 14.5 GHz
Power Added Efficiency
VDS = 8 V, at P1dB Conditions.
NE900089A
89A
UNITS MIN TYP MAX
NE900000
NE900000G
NE900075
00 (CHIP), 75
MIN TYP MAX
mA
80
120
150
80
120
150
V
V
V
-1.5
-3.5
-5
-1.5
-3.5
-5
mS
mS
mS
25
NE900200
NE900200G
NE900275
00 (CHIP), 75
MIN TYP MAX
150
225
300
300
450
600
-2
-3.5
-5
-2
-3.5
-5
25
50
100
°C/W
W
dBm
NE900100
NE900100G
NE900175
00 (CHIP), 75
MIN TYP MAX
180
0.8
19.5
180
0.8
100
1.5
50
3
20.5
dBm
19.5
20.5
dBm
22
23
dBm
25.5
dBm
dBm
dBm
dBm
20.5
dB
dB
dB
dB
9
%
27
26.5
20
23
25
8
7
7
27
27
26
California Eastern Laboratories
NE9000, NE9001, NE9002 SERIES
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
PARAMETERS
UNITS
RATINGS
VDS
Drain to Source Voltage
V
20
VGS
Gate to Source Voltage
V
-9
ID
Drain Current
NE900000, NE900075/89
NE900100, NE900175
NE900200, NE900275
mA
mA
mA
Gate Current
NE900000, NE900075/89
NE900100, NE900175
NE900200, NE900275
IG
150
300
600
mA
mA
mA
1.3
2.6
5
3
Total Power Dissipation, PT (W)
SYMBOLS
POWER DERATING CURVE
NE9002
2
NE9001
1
NE9000
0
0
OUTLINE DIMENSIONS (Units in mm)
50
100
150
200
Case Temperature, TA (°C)
PACKAGE OUTLINE 75
+0.15
-0.05
2 PLACES
φ 1.8
PACKAGE OUTLINE 89A
GATE
0.5 ± 0.1
SOURCE
2.03 ± 0.2
4.0 MIN (ALL LEADS)
S
2.7±0.3
2.3±0.1
0.51
3.0 MIN BOTH
LEADS
DRAIN
D
G
2.7 TYP
7.0
+0.06
0.1 -0.02
9.8 MAX
S
1.02
2.3
1.13
1.6 MAX
0.9 MAX
NE900000 (CHIP)
(Units in µm)
50
0.1
400
NE900100/NE900200 (CHIP)*
(Units in µm)
52
D
550
53
D
D
430
50
228
62
G
440
130
S
S
50
240
G
62
G
142
131
Die Thickness: 110 to 160 µm
S
S
S
Recommended Bonding Area.
50
Glassivated Area
116
80
Plated Wraparound (Optional)
HANDLING PRECAUTIONS
DIE ATTACHMENT
Die attach can be accomplished with Au-Ge (390 ± 10°C) preforms in
a forming gas environment. Epoxy die attach is not recommended.
ture should be lowered.
BONDING
The user must operate in a clean, dry environment. The chip channel
is glassivated for mechanical protection only and does not preclude the
necessity of a clean environment.
Gate and drain bonding wires should be semi-hard gold wire (3 to 8%
elongation) 30 microns or less in diameter.
Bonding should be performed with a wedge tip that has a taper of
approximately 15°. Die attach and bonding time should be kept to a
minimum. As a general rule, the bonding operation should be kept within
a 300°C to 10 minute curve. If longer periods are required, the tempera-
PRECAUTIONS
The bonding equipment should be periodically checked for sources of
surge voltage and should be properly grounded at all times. In fact, all
test and handling equipment should be grounded to minimize the
possibilities of static discharge.
NE9000, NE9001, NE9002 SERIES
TYPICAL SMALL SIGNAL SCATTERING PARAMETERS
NE900000
VDS = 8 V, ID = 50 mA
FREQUENCY
S11
(MHz)
MAG
2000
3000
4000
5000
6000
7000
8000
9000
10000
11000
12000
13000
14000
15000
16000
17000
18000
.96
.90
.87
.85
.82
.79
.75
.73
.72
.71
.72
.73
.74
.75
.74
.71
.65
S21
ANG
S12
S22
MAG
ANG
MAG
ANG
-42
-59
-73
-85
-94
-103
-112
-120
-128
-134
-140
-144
-147
-149
-151
-152
-155
3.00
2.71
2.48
2.28
2.10
1.94
1.79
1.64
1.51
1.38
1.27
1.17
1.09
1.04
1.01
1.03
1.10
148
136
125
114
105
96
88
80
73
67
62
58
54
51
48
45
40
.04
.04
.05
.06
.06
.07
.07
.07
.07
.07
.07
.07
.07
.08
.09
.10
.11
69
66
62
58
55
53
52
52
53
55
58
63
69
74
78
81
82
MAG
ANG
MAG
ANG
MAG
.91
.82
.77
.75
.74
.74
.73
.72
.72
.72
.72
.73
.73
.74
.73
.71
.67
-63
-81
-97
-110
-120
-129
-135
-141
-145
-148
-150
-152
-153
-155
-157
-161
-167
4.54
3.70
3.14
2.75
2.44
2.17
1.93
1.70
1.50
1.34
1.21
1.13
1.08
1.05
1.03
1.00
.93
137
124
111
100
91
83
77
71
67
62
58
55
51
48
44
41
36
.05
.05
.06
.06
.07
.07
.07
.07
.07
.07
.07
.08
.08
.09
.10
.12
.13
MAG
ANG
.80
.78
.76
.74
.72
.71
.70
.70
.70
.71
.71
.71
.71
.71
.70
.69
.68
-11
-12
-13
-17
-20
-24
-28
-32
-34
-36
-38
-39
-40
-41
-43
-47
-53
NE900100
VDS = 8 V, ID = 90 mA
FREQUENCY
(MHz)
2000
3000
4000
5000
6000
7000
8000
9000
10000
11000
12000
13000
14000
15000
16000
17000
18000
S11
S21
S12
S22
ANG
63
55
51
48
47
48
49
52
55
60
65
70
74
78
80
82
82
MAG
.47
.46
.44
.43
.41
.40
.39
.39
.40
.41
.43
.46
.47
.49
.49
.46
.41
ANG
-26
-33
-38
-43
-47
-53
-58
-64
-70
-76
-81
-86
-90
-94
-98
-102
-109
NE9000, NE9001, NE9002 SERIES
NE900200 TYPICAL SMALL SIGNAL SCATTERING PARAMETERS
+90˚
+60˚
+120˚
S11
18 GHz
+150˚
S21
1.5 GHZ
+30˚
S12
18 GHZ
S12
1.5 GHZ
S22
18 GHz
0˚
±180˚
S21
18 GHZ
S22
1.5 GHz
-30˚
-150˚
S11
1.5 GHz
-60˚
-120˚
-90˚
NE900200
VDS = 8 V, ID = 180 mA
FREQUENCY
S11
S21
S12
S22
GHz
MAG
ANG
MAG
AN
MAG
ANG
MAG
ANG
1.5
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
0.910
0.879
0.850
0.836
0.830
0.827
0.823
0.824
0.822
0.820
0.824
0.818
0.815
0.815
0.813
0.811
0.815
0.811
-88.000
-106.000
-129.000
-143.000
-153.000
-160.000
-165.000
-170.000
-174.000
-178.000
176.000
172.000
167.000
163.000
160.000
157.000
154.000
153.000
4.852
4.143
3.077
2.413
1.983
1.693
1.490
1.342
1.196
1.100
1.002
0.920
0.840
0.784
0.732
0.690
0.647
0.627
123.000
112.000
93.000
79.000
69.000
60.000
52.000
44.000
36.000
29.000
22.000
15.000
10.000
4.000
1.000
-5.000
-7.000
-11.000
0.057
0.065
0.070
0.075
0.077
0.082
0.081
0.086
0.091
0.100
0.108
0.117
0.129
0.146
0.160
0.187
0.207
0.241
48.000
41.000
34.000
32.000
30.000
33.000
34.000
38.000
42.000
45.000
45.000
48.000
48.000
49.000
50.000
48.000
48.000
45.000
0.286
0.274
0.267
0.281
0.303
0.331
0.368
0.406
0.443
0.484
0.524
0.554
0.584
0.601
0.623
0.631
0.635
0.638
-56.000
-68.000
-82.000
-92.000
-102.000
-108.000
-114.000
-120.000
-125.000
-130.000
-134.000
-137.000
-141.000
-144.000
-146.000
-151.000
-156.000
-162.000
K
MAG1
0.240
0.323
0.496
0.629
0.751
0.809
0.914
0.892
0.904
0.827
0.739
0.719
0.671
0.588
0.534
0.454
0.437
0.369
19.300
18.044
16.430
15.075
14.108
13.148
12.647
11.933
11.187
10.414
9.674
8.956
8.137
7.300
6.604
5.670
4.949
4.153
Note:
1. Gain Calculations:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
NE9000, NE9001, NE9002 SERIES
TYPICAL SMALL SIGNAL SCATTERING PARAMETERS
+90˚
+120˚
+60˚
S21
2 GHZ
+30˚
+150˚
S12
18 GHZ
S22
18 GHZ
±180˚
S11
18 GHZ
S11
2 GHZ
S12
2 GHZ
S21
18 GHZ
S22
2 GHZ
0˚
-30˚
-150˚
-60˚
-120˚
-90˚
NE900275
VDS = 8 V, ID = 180 mA
FREQUENCY
S11
GHZ
MAG
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
0.900
0.900
0.870
0.860
0.850
0.850
0.830
0.770
0.690
0.560
0.440
0.480
0.690
0.820
0.900
0.920
0.940
S21
ANG
-123.000
-146.000
-161.000
-172.000
-180.000
172.000
162.000
151.000
135.000
108.000
56.000
-19.000
-69.000
-97.000
-115.000
-126.000
-136.000
MAG
3.670
2.760
2.140
1.820
1.610
1.510
1.500
1.520
1.600
1.770
1.880
1.770
1.480
1.110
0.860
0.650
0.540
S12
ANG
95.000
76.000
54.000
46.000
26.000
16.000
1.000
-12.000
-34.000
-51.000
-80.000
-116.000
-146.000
-175.000
162.000
141.000
127.000
S22
MAG
ANG
MAG
ANG
0.060
0.060
0.060
0.060
0.060
0.060
0.060
0.070
0.080
0.090
0.100
0.090
0.070
0.050
0.040
0.040
0.050
24.000
15.000
3.000
3.000
1.000
-1.000
-3.000
-5.000
-16.000
-26.000
-51.000
-85.000
-121.000
-165.000
158.000
114.000
89.000
0.230
0.250
0.280
0.320
0.370
0.410
0.450
0.480
0.510
0.540
0.590
0.610
0.610
0.570
0.560
0.580
0.590
-97.000
-117.000
-131.000
-143.000
-152.000
-161.000
-170.000
-178.000
173.000
162.000
147.000
128.000
108.000
85.000
65.000
48.000
36.000
K
MAG1
0.325
0.397
0.698
0.850
0.974
0.972
1.051
1.162
1.227
1.311
1.259
1.408
1.392
1.624
1.416
1.498
1.020
17.865
16.628
15.523
14.819
14.287
14.008
12.595
10.931
10.140
9.594
9.681
9.136
9.522
8.835
9.487
7.938
9.472
Note:
1. Gain Calculations:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
PRINTED IN USA ON RECYCLED PAPER -11/97
DATA SUBJECT TO CHANGE WITHOUT NOTICE
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