Vishay IRF634NS Power mosfet Datasheet

IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
250
RDS(on) (Ω)
VGS = 10 V
0.435
Qg (Max.) (nC)
34
Qgs (nC)
6.5
Qgd (nC)
16
Configuration
Single
•
•
•
•
•
•
•
•
Advanced Process Technology
Dynamic dV/dt Rating
175 °C Operating Temperature
Fast Switching
Fully Avalanche Rated
Ease of Paralleling
Simple Drive Requirements
Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
I2PAK (TO-262)
TO-220
D
S
G
D
G
D2PAK (TO-263)
S
N-Channel MOSFET
G D
S
Fifth generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
The D2PAK (TO-263) is a surface mount power package
capable of accommodating die sizes up to HEX-4. It provides
the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D2PAK (TO-263) is suitable for high current applications
because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface mount application.
The through-hole version (IRF634NL/SiHF634NL) is
available for low-profile application.
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
D2PAK (TO-263)
D2PAK (TO-263)
D2PAK (TO-263)
I2PAK (TO-262)
IRF634NPbF
IRF634NSPbF
IRF634NSTRLPbFa
IRF634NSTRRPbFa
IRF634NLPbF
SiHF634N-E3
SiHF634NS-E3
SiHF634NSTL-E3a
SiHF634NSTR-E3a
SiHF634NL-E3
IRF634N
IRF634NS
IRF634NSTRLa
IRF634NSTRRa
-
SiHF634N
SiHF634NS
SiHF634NSTLa
SiHF634NSTRa
-
TO-220
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
SYMBOL
VDS
LIMIT
250
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
VGS at 10 V
TC = 25 °C
TC = 100 °C
Pulsed Drain Currenta
ID
IDM
Linear Derating Factor
UNIT
V
8.0
5.6
A
32
0.59
W/°C
Single Pulse Avalanche Energyb
EAS
110
mJ
Avalanche Currenta
IAR
4.8
A
Repetiitive Avalanche Energya
EAR
8.8
mJ
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91033
S-Pending-Rev. A, 19-Jun-08
WORK-IN-PROGRESS
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IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
Maximum Power Dissipation
TC = 25 °C
SYMBOL
Maximum Power Dissipation (PCB Mount)e
TA = 25 °C
PD
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
LIMIT
88
W
3.8
dV/dt
7.3
TJ, Tstg
- 55 to + 175
V/ns
°C
300c
for 10 s
Mounting Torqued
UNIT
6-32 or M3 screw
10
lbf · in
1.1
N·m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. Starting TJ = 25 °C, L = 9.5 mH, RG = 25 Ω, IAS = 4.8 A, VGS = 10 V.
c. 1.6 mm from case.
d. This is only applied to TO-220 package.
e. This is applied to D2PAK, when mounted 1" square PCB (FR-4 or G-10 material).
THERMAL RESISTANCE RATINGS
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambienta
PARAMETER
RthJA
-
62
Maximum Junction-to-Ambient
(PCB Mount)b
RthJA
-
40
Maximum Junction-to-Case (Drain)
RthJC
-
1.7
Case-to-Sink, Flat, Greased Surfacea
RthCS
0.50
-
UNIT
°C/W
Notes
a. This is only applied to TO-220 package.
b. This is applied to D2PAK, when mounted 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
VDS
VGS = 0 V, ID = 250 µA
250
-
-
V
ΔVDS/TJ
Reference to 25 °C, ID = 1 mA
-
0.33
-
V/°C
VGS(th)
VDS = VGS, ID = 250 µA
2.0
-
4.0
V
Gate-Source Leakage
IGSS
VGS = ± 20 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 250 V, VGS = 0 V
-
-
25
VDS = 200 V, VGS = 0 V, TJ = 150 °C
-
-
250
µA
-
-
0.435
Ω
gfs
VDS = 50 V, ID = 4.8 Ab
5.4
-
-
S
Input Capacitance
Ciss
-
620
-
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
Drain-Source On-State Resistance
Forward Transconductance
RDS(on)
VGS = 10 V
ID = 4.8 Ab
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
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2
-
84
-
-
23
-
-
-
34
-
-
6.5
Qgd
-
-
16
td(on)
-
8.4
-
tr
-
16
-
-
28
-
-
15
-
td(off)
tf
VGS = 10 V
ID = 4.8 A, VDS = 200 V,
see fig. 6 and 13b
VDD = 125 V, ID = 4.8 A,
RG = 1.3 Ω, see fig. 10b
pF
nC
ns
Document Number: 91033
S-Pending-Rev. A, 19-Jun-08
IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
-
4.5
-
-
7.5
-
-
-
8.0
-
-
32
UNIT
Dynamic
Internal Drain Inductance
LD
Internal Source Inductance
LS
Between lead,
6 mm (0.25") from
package and center of
die contact
D
nH
G
S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
MOSFET symbol
showing the
integral reverse
p - n junction diode
IS
Pulsed Diode Forward Currenta
ISM
Body Diode Voltage
trr
Body Diode Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
A
G
S
TJ = 25 °C, IS = 4.8 A, VGS = 0
VSD
Body Diode Reverse Recovery Time
D
Vb
TJ = 25 °C, IF = 4.8 A, dI/dt = 100 A/µsb
-
-
1.3
V
-
130
200
ns
-
650
980
nC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
102
VGS
Top
15 V
10 V
8.0 V
7.0 V
10
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
1
4.5 V
0.1
20 µs Pulse Width
TC = 25 °C
10-2
0.1
91033_01
1
10
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
Document Number: 91033
S-Pending-Rev. A, 19-Jun-08
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
102
VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
Top
10
4.5 V
1
20 µs Pulse Width
TC = 175 °C
0.1
102
0.1
91033_02
1
102
10
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
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IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS
Vishay Siliconix
ID, Drain-to-Source Current (A)
102
1200
TJ = 175 °C
1
TJ = 25 °C
0.1
4.0
RDS(on), Drain-to-Source On Resistance
(Normalized)
3.0
6.0
7.0
8.0
200
9.0
ID = 7.9 A
VGS = 10 V
2.5
2.0
1.5
1.0
0.5
1
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
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4
102
10
103
VDS, Drain-to-Source Voltage (V)
91033_05
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
20
ID = 4.8 A
VDS = 200 V
16
VDS = 125 V
VDS = 50 V
12
8
4
For test circuit
see figure 13
0
0.0
- 60 - 40- 20 0 20 40 60 80 100 120 140 160 180
91033_04
Crss
400
0
5.0
Fig. 3 - Typical Transfer Characteristics
3.5
Coss
600
20 µs Pulse Width
VDS = 50 V
VGS, Gate-to-Source Voltage (V)
91033_03
Ciss
800
VGS, Gate-to-Source Voltage (V)
10
C, Capacitance (pF)
1000
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
0
91033_06
10
20
30
40
QG, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Document Number: 91033
S-Pending-Rev. A, 19-Jun-08
IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS
Vishay Siliconix
10.0
ID, Drain Current (A)
ISD, Reverse Drain Current (A)
102
10
TJ = 175 °C
1
TJ = 25 °C
0.1
0.2
0.6
0.8
1.0
4.0
0.0
25
1.2
VSD, Source-to-Drain Voltage (V)
91033_07
6.0
2.0
VGS = 0 V
0.4
8.0
50
75
Fig. 7 - Typical Source-Drain Diode Forward Voltage
VDS
VGS
ID, Drain-to-Source Current (A)
102
125
150
175
RD
D.U.T.
RG
Operation in this area limited
by RDS(on)
+
- VDD
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
10
100 µs
Fig. 10a - Switching Time Test Circuit
1
1 ms
VDS
90 %
TC = 25 °C
TJ = 175 °C
Single Pulse
0.1
1
91033_08
100
TC, Case Temperature (°C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
91033_09
10
10 ms
102
VDS, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
103
10 %
VGS
td(on)
tr
td(off) tf
Fig. 10b - Switching Time Waveforms
Document Number: 91033
S-Pending-Rev. A, 19-Jun-08
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IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS
Vishay Siliconix
Thermal Response (ZthJC)
10
1
0 − 0.5
0.2
0.1
0.05
0.02
0.01
0.1
PDM
t1
Single Pulse
(Thermal Response)
t2
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
10-2
10-5
10-4
10-3
10-2
0.1
t1, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
91033_11
VDS
15 V
tp
Driver
L
VDS
D.U.T
RG
+
A
- VDD
IAS
20 V
tp
IAS
0.01 Ω
EAS, Single Pulse Avalanche Energy (mJ)
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
200
ID
2.0 A
3.4 A
Bottom 4.8 A
Top
160
120
91033_12c
80
40
0
25
50
75
100
125
150
175
Starting TJ, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
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Document Number: 91033
S-Pending-Rev. A, 19-Jun-08
IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS
Vishay Siliconix
Current regulator
Same type as D.U.T.
QG
VGS
50 kΩ
0.2 µF
12 V
0.3 µF
QGS
QGD
+
D.U.T.
VG
-
VDS
VGS
3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
Fig. 13a - Basic Gate Charge Waveform
Peak Diode Recovery dV/dt Test Circuit
+
D.U.T
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
RG
•
•
•
•
dV/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by duty factor "D"
D.U.T. - device under test
Driver gate drive
P.W.
+
Period
D=
+
-
VDD
P.W.
Period
VGS = 10 V*
D.U.T. ISD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
VDD
Body diode forward drop
Inductor current
Ripple ≤ 5 %
ISD
* VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91033.
Document Number: 91033
S-Pending-Rev. A, 19-Jun-08
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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