MOTOROLA MRF18060B Rf power field effect transistor Datasheet

MOTOROLA
Freescale Semiconductor, Inc.
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SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power Field Effect Transistors
Freescale Semiconductor, Inc...
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN - PCS/cellular radio and WLL
applications. Specified for GSM1930 - 1990 MHz.
• GSM Performance, Full Frequency Band (1930 - 1990 MHz)
Power Gain — 13 dB (Typ) @ 60 Watts CW
Efficiency — 45% (Typ) @ 60 Watts CW
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 60 Watts CW Output Power
• Excellent Thermal Stability
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40µ″ Nominal.
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.
MRF18060BR3
MRF18060BSR3
MRF18060BLSR3
1.90 - 1.99 GHz, 60 W, 26 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF18060BR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF18060BSR3, MRF18060BLSR3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain - Source Voltage
VDSS
65
Vdc
Gate - Source Voltage
VGS
- 0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
180
1.03
Watts
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Value
Unit
RθJC
0.97
°C/W
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
2 (Minimum)
Machine Model
M3 (Minimum)
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 5
MOTOROLA
RF DEVICE DATA
 Motorola,
Inc. 2004
MRF18060BR3 MRF18060BSR3 MRF18060BLSR3
1
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Drain - Source Breakdown Voltage
(VGS = 0 Vdc, ID = 10 µAdc)
V(BR)DSS
65
—
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS
—
—
6
µAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
µAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 300 µAdc)
VGS(th)
2
—
4
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 500 mAdc)
VGS(Q)
2.5
3.9
4.5
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 2 Adc)
VDS(on)
—
0.27
—
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
gfs
—
4.7
—
S
Input Capacitance (Including Input Matching Capacitor in Package) (1)
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Ciss
—
160
—
pF
Output Capacitance (1)
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
740
—
pF
Reverse Transfer Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
2.7
—
pF
11.5
13
—
40
45
—
—
—
- 10
OFF CHARACTERISTICS
Freescale Semiconductor, Inc...
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system)
Common - Source Amplifier Power Gain @ 60 W (2)
(VDD = 26 Vdc, IDQ = 500 mA, f = 1930 - 1990 MHz)
Gps
Drain Efficiency @ 60 W (2)
(VDD = 26 Vdc, IDQ = 500 mA, f = 1930 - 1990 MHz)
η
Input Return Loss (2)
(VDD = 26 Vdc, Pout = 60 W CW, IDQ = 500 mA,
f = 1930 - 1990 MHz)
dB
%
IRL
Output Mismatch Stress
(VDD = 26 Vdc, Pout = 60 W CW, IDQ = 500 mA VSWR = 10:1,
All Phase Angles at Frequency of Tests)
dB
Ψ
No Degradation In Output Power
Before and After Test
(1) Part is internally matched both on input and output.
(2) To meet application requirements, Motorola test fixtures have been designed to cover the full GSM1900 band, ensuring batch - to - batch
consistency.
MRF18060BR3 MRF18060BSR3 MRF18060BLSR3
MOTOROLA RF DEVICE DATA
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Z5
VDD
VGG
R1
C3
R2
C7
Z2
Freescale Semiconductor, Inc...
Z6
Z7
C6
Z3
C5
C4
C1, C3
C2
C4, C8
C5
C6
C7, C9
R1, R2
R3
Z4
C9
Z1
C2
C1
R3
RF
INPUT
+
RF
OUTPUT
C8
DUT
10 pF, 100B Chip Capacitors
10 mF, 35 V Electrolytic Tantalum Capacitor
1.2 pF, 100B Chip Capacitors
1.0 pF, 100B Chip Capacitor
2.2 pF, 100B Chip Capacitor
0.3 pF, 100B Chip Capacitors
10 kΩ Chip Resistors (0805)
1.0 kΩ Chip Resistor (0805)
Z1
Z2
Z3
Z4
Z5
Z6
Z7
PCB
0.60″ x 0.09″ Microstrip
1.00″ x 0.09″ Microstrip
0.51″ x 0.94″ Microstrip
0.59″ x 0.98″ Microstrip
0.79″ x 0.09″ Microstrip
1.38″ x 0.09″ Microstrip
0.79″ x 0.09″ Microstrip
Teflon Glass
Figure 1. 1930 - 1990 MHz Test Fixture Schematic
VBIAS
VSUPPLY
C2
R1
C1
R2
C9
C4
C3
C7
R3
C6
C5
C8
Ground
Ground
MRF18060
Figure 2. 1930 - 1990 MHz Test Fixture Component Layout
MOTOROLA RF DEVICE DATA
MRF18060BR3 MRF18060BSR3 MRF18060BLSR3
3
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Freescale Semiconductor, Inc.
Vbias
ÎÎÎ
ÎÎÎ
ÎÎÎ
C1
T1
T1
R1
R5
R2
Vsupply
C2
C4
R3
T2
+
C3
R4
C5
Freescale Semiconductor, Inc...
R6
RF
INPUT
Z1
Z2
C6
C1
C2
C3, C5, C8
C4
C6
C7
R1
R2, R6
R3
R4
R5
Z6
Z3
Z4
Z7
RF
OUTPUT
Z5
C7
C8
1 mF Chip Capacitor (0805)
100 nF Chip Capacitor (0805)
10 pF Chip Capacitors, ACCU - P (0805)
10 mF, 35 V Tantalum Electrolytic Capacitor
1.8 pF Chip Capacitor, ACCU - P (0805)
1 pF Chip Capacitor, ACCU - P (0805)
10 Ω Chip Resistor (0805)
1 kΩ Chip Resistors (0805)
1.2 kΩ Chip Resistor (0805)
2.2 kΩ Chip Resistor (0805)
5 kΩ, SMD Potentiometer
T1
LP2951 Micro - 8 Voltage Regulator
T2
BC847 SOT - 23 NPN Transistor
Z1
0.159″ x 0.055″ Microstrip
Z2
0.982″ x 0.055″ Microstrip
Z3
0.087″ x 0.055″ Microstrip
Z4
0.512″ x 0.787″ Microstrip
Z5
0.433″ x 1.220″ Microstrip
Z6
1.039″ x 0.118″ Microstrip
Z7
0.268″ x 0.055″ Microstrip
Substrate = 0.5 mm Teflon Glass, εr = 2.55
Figure 3. 1800 - 2000 MHz Demo Board Schematic
Vbias
Î
ÎÎ
Î
Î
Ground
C4
R1
C1
R2
R3
T1
R4
T2
R5
C2
C3
C7
C5
R6
MRF18060
ÎÎÎÎÎÎ
ÎÎ
Î
ÎÎ
Î
ÎÎ
ÎÎÎÎÎÎ
Vsupply
C8
C6
ÎÎ
Î
ÎÎ
Î
ÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
Î
Î
MRF18060
Figure 4. 1800 - 2000 MHz Demo Board Component Layout
MRF18060BR3 MRF18060BSR3 MRF18060BLSR3
MOTOROLA RF DEVICE DATA
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16
100
15
90
Pout , OUTPUT POWER (WATTS)
IDQ = 750 mA
13
500 mA
12
11 300 mA
10
100 mA
9
VDD = 26 Vdc
f = 1880 MHz
80
60
40
30
100
18
Pout , OUTPUT POWER (WATTS)
70
3W
60
50
VDD = 26 Vdc
IDQ = 500 mA
30
1W
20
0.5 W
55
70
1880
1900
Figure 7. Output Power versus Frequency
45
Pout
50
35
30
30
VDD = 26 Vdc
IDQ = 500 mA
f = 1880 MHz
20
1
2
3
4
Pin, INPUT POWER (WATTS)
20
5
6
Figure 8. Output Power and Efficiency
versus Input Power
0
−2
Gps
−4
13.5
−6
13.0
−8
12.5
−10
12.0
−12
11.5
−14
IRL
−16
VDD = 26 Vdc
IDQ = 500 mA
10.5
10.0
1800
25
15
0
14.5
11.0
40
40
15.0
14.0
G ps, POWER GAIN (dB)
50
h
60
0
1700
30
80
10
1840
1860
f, FREQUENCY (MHz)
28
60
0
1820
22
24
26
VDD, SUPPLY VOLTAGE (VOLTS)
90
10
1800
20
Figure 6. Output Power versus Supply Voltage
Pin = 6 W
40
VDD = 26 Vdc
IDQ = 500 mA
10
0
90
80
1W
20
Figure 5. Power Gain versus
Output Power
Pout , OUTPUT POWER (WATTS)
Freescale Semiconductor, Inc...
10
Pout, OUTPUT POWER (WATTS)
2.5 W
50
8
1
Pin = 5 W
70
η, DRAIN EFFICIENCY (%)
14
1900
f, FREQUENCY (MHz)
2000
IRL, INPUT RETURN LOSS (dB)
G ps, POWER GAIN (dB)
TYPICAL CHARACTERISTICS (DATA TAKEN USING WIDEBAND DEMONSTRATION BOARD)
−18
−20
2100
Figure 9. Wideband Gain and IRL
(at Small Signal)
MOTOROLA RF DEVICE DATA
MRF18060BR3 MRF18060BSR3 MRF18060BLSR3
5
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Zo = 5 Ω
Zload
Freescale Semiconductor, Inc...
f = 1700 MHz
f = 1700 MHz
f = 2100 MHz
Zsource
f = 2100 MHz
VDD = 26 V, IDQ = 500 mA, Pout = 60 W CW
f
MHz
Zsource
Ω
Zload
Ω
1700
0.60 - j2.53
2.27 - j3.44
1800
0.80 - j3.20
2.05 - j3.05
1900
0.92 - j3.42
1.90 - j2.90
2000
1.07 - j3.59
1.64 - j2.88
2100
1.31 - j4.00
1.29 - j2.99
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under Test
Input
Matching
Network
Z
source
Z
load
Figure 10. Series Equivalent Input and Output Impedance
MRF18060BR3 MRF18060BSR3 MRF18060BLSR3
MOTOROLA RF DEVICE DATA
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PACKAGE DIMENSIONS
B
G
Q
bbb
2X
1
T A
M
M
B
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
3
B
K
2
(FLANGE)
D
bbb
M
T A
B
M
M
M
bbb
Freescale Semiconductor, Inc...
N
R
(INSULATOR)
M
T A
B
M
M
ccc
M
T A
M
M
aaa
M
T A
M
S
(LID)
ccc
H
M
T A
B
M
(LID)
B
M
(INSULATOR)
B
M
C
F
E
A
T
A
SEATING
PLANE
(FLANGE)
CASE 465 - 06
ISSUE F
NI - 780
MRF18060BR3
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
1.335
1.345
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
1.100 BSC
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
.118
.138
0.365
0.375
0.365
0.375
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
33.91
34.16
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
27.94 BSC
1.45
1.70
4.32
5.33
19.66
19.96
19.60
20.00
3.00
3.51
9.27
9.53
9.27
9.52
0.127 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
4X U
(FLANGE)
4X Z
(LID)
B
1
K
2X
2
B
(FLANGE)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
D
bbb
M
T A
M
B
M
N
R
(LID)
ccc
M
M
T A
M
B
M
ccc
M
T A
S
(INSULATOR)
bbb
M
T A
M
M
B
M
aaa
M
T A
M
(LID)
B
M
(INSULATOR)
B
M
H
C
3
E
A
A
(FLANGE)
MOTOROLA RF DEVICE DATA
F
T
SEATING
PLANE
CASE 465A - 06
ISSUE F
NI - 780S
MRF18060BSR3, MRF18060BLSR3
DIM
A
B
C
D
E
F
H
K
M
N
R
S
U
Z
aaa
bbb
ccc
INCHES
MIN
MAX
0.805
0.815
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
0.365
0.375
0.365
0.375
−−− 0.040
−−− 0.030
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
20.45
20.70
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
1.45
1.70
4.32
5.33
19.61
20.02
19.61
20.02
9.27
9.53
9.27
9.52
−−−
1.02
−−−
0.76
0.127 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
MRF18060BR3 MRF18060BSR3 MRF18060BLSR3
7
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MRF18060BR3 MRF18060BSR3 MRF18060BLSR3
MOTOROLA RF DEVICE DATA
◊For More Information On This Product,
MRF18060B/D
8
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