ASI BLY89C Npn silicon rf power transistor Datasheet

BLY89C
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BLY89C is Designed primarily
for VHF communications, up to 175
MHz.
PACKAGE STYLE .380 4L STUD
.112x45°
FEATURES:
• Common Emitter
• PG = 6.0 dB at 25 W/175 MHz
• Omnigold™ Metalization System
B
MAXIMUM RATINGS
D
A
C
E
ØC
E
B
H
I
J
IC
6.0 A
VCBO
36 V
VCEO
18 V
G
#8-32 UNC-2A
F
VEBO
PDISS
E
4.0 V
73 W @ TC = 25 °C
TJ
-65 °C to +200 °C
TSTG
-65 °C to +150 °C
θJC
2.4 °C/W
CHARACTERISTICS
MINIMUM
inches / mm
inches / mm
A
.220 / 5.59
.230 / 5.84
B
.980 / 24.89
C
.370 / 9.40
.385 / 9.78
D
.004 / 0.10
.007 / 0.18
E
.320 / 8.13
.330 / 8.38
F
.100 / 2.54
.130 / 3.30
G
.450 / 11.43
.490 / 12.45
H
.090 / 2.29
.100 / 2.54
I
.155 / 3.94
.175 / 4.45
.750 / 19.05
J
TC = 25 °C
NONETEST CONDITIONS
SYMBOL
MAXIMUM
DIM
MINIMUM TYPICAL MAXIMUM
UNITS
BVCEO
IC = 50 mA
18
V
BVCES
IC = 25 mA
36
V
BVEBO
IE = 10 mA
4.0
V
ICES
VCE = 18 V
hFE
VCE = 5.0 V
COB
VCB = 15 V
PG
ηC
VCE = 12.5 V
IC = 2.5 A
10
f = 1.0 MHz
POUT = 25 W
f = 175 MHz
6.0
70
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
10
mA
80
---
130
pF
dB
%
REV. A
1/1
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