Microsemi GC4215 High speed pin diode Datasheet

TOC
Control Devices
HIGH SPEED PIN DIODES
DESCRIPTION
APPLICATIONS
The GC4200 series are high speed (cathode base) PIN diodes made with high resistivity epitaxial silicon material.
These diodes are passivated with silicon dioxide for high
stability and reliability and have been proven by thousands of device hours in high reliability systems.
The GC4200 series can be used in RF circuits as an on/off
element, as a switch, or as a current controlled resistor
in attenuators extending over the frequency range from
UHF through Ku band.
These devices can withstand storage temperatures from
-65° to +200°C and will operate over the range from -55°
to +150°C. All devices meet or exceed military environmental specifications of MIL-S-19500. The GC4200 series will operate with as little as +10 mA forward bias.
Switch applications include high speed switches (ECM
systems), TR switches, channel or antenna selection
switches (telecommunications), duplexers (radar) and
digital phase shifters (phased arrays).
The GC4200 series are also used as passive and active
limiters for low to moderate RF power levels.
Attenuator type applications include amplitude modulators, AGC attenuators, power levelers and level set attenua-
ELECTRICAL SPECIFICATIONS: TA = 25°C
MODEL
NUMBER
BREAKDOWN VOLTAGE
(IR = 10µA MAX)
VB (MIN) (Volts)
JUNCTION
1
SERIES RESISTANCE
2
CARRIER LIFETIME
(20mA, 1 GHz)
(IR=6mA, IF=10mA)
CJ-10 (MAX)
RS20 (MAX)
TL (TYP)
(pF)
(Ohms)
(nS)
CAPACITANCE
60
THERMAL RESISTANCE
(MAX)
(°C/W)
GC4270
70
0.06
1.5
GC4271
70
0.10
1.0
60
80
70
GC4272
70
0.20
0.8
60
70
GC4273
70
0.30
0.7
60
60
GC4274
70
0.40
0.6
60
50
GC4275
70
0.50
0.5
60
40
GC4210
100
0.06
1.5
100
80
GC4211
100
0.10
1.0
100
70
GC4212
100
0.20
0.75
100
70
GC4213
100
0.30
0.6
100
60
GC4214
100
0.40
0.5
100
50
GC4215
100
0.50
0.35
100
40
GC4220
250
0.06
2.5
400
80
GC4221
250
0.10
2.0
400
70
GC4222
250
0.20
1.5
400
70
GC4223
250
0.30
1.0
400
60
GC4224
250
0.40
0.8
400
50
GC4225
250
0.50
0.6
400
40
Notes:
1. Capacitance is measured at 1 MHz and -10 volts.
2. Resistance is measured using transmission loss techniques.
3. This series of devices is available in standard case styles 00, 15, 30, 35 and 85, plus other styles on request.
The tabulated specifications above are for the style 30
package. Diodes may also be available in other case
styles.
Each type offers trade offs in series resistance, junction
capacitance and carrier lifetime; the proper choice of
which depends on the end application. Reverse polarity
diodes (NIP) and higher voltage PIN and NIP diodes are
also available. (See data sheets for GC4300, GC4400,
and GC4500 series respectively.)
RATINGS
Maximum Leakage Current: 0.5 µA at 80% of minimum
rated breakdown
Operating Temperature:
-55°C to +150°C
Storage Temperature:
-65°C to +200°C
SEMICONDUCTOR OPERATION
75 Technology Drive • Lowell, MA 01851 • Tel: 978-442-5600 • Fax: 978-937-3748
71
TOC
Control Devices
HIGH SPEED PIN DIODES
Rs SERIES RESISTANCE - (OHMS)
TYPICAL PERFORMANCE CURVES
100
GC4270
GC4271
GC4272
GC4273
GC4274
GC4275
10
1.0
.1
.01
.1
1.0
10.
I F FORWARD BIAS CURRENT - (mA)
100
SEMICONDUCTOR OPERATION
75 Technology Drive • Lowell, MA 01851 • Tel: 978-442-5600 • Fax: 978-937-3748
72
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