Infineon BSO604NS2 Optimos power-transistor Datasheet

BSO604NS2
OptiMOS Power-Transistor
Product Summary
Feature
• Dual N-Channel
• Enhancement mode
VDS
55
V
R DS(on)
35
mΩ
ID
• Logic Level
5
A
P-DSO-8 -7
•150 °C operating temperature
• Avalanche rated
• dv/dt rated
Type
BSO604NS2
Package
P-DSO-8 -7
Ordering Code
Q67060-S7309
Marking
2N604L
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
ID
Value
Unit
A
TA=25°C, one channel active
5
TA=70°C, one channel active
4
ID puls
20
EAS
90
dv/dt
6
Gate source voltage
VGS
±20
V
Power dissipation, one channel active
Ptot
2
W
-55... +150
°C
Pulsed drain current, one channel active
TA=25°C
Avalanche energy, single pulse
mJ
ID=5 A , VDD=25V, RGS=25Ω
Reverse diode dv/dt
kV/µs
IS=5A, VDS=44V, di/dt=200A/µs, Tjmax=150°C
TA=25°C
Operating and storage temperature
Tj , Tstg
IEC climatic category; DIN IEC 68-1
55/150/56
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2003-10-28
BSO604NS2
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
-
34
50
@ min. footprint ; t ≤ 10 s
-
-
100
@ 6 cm2 cooling area 1) ; t ≤10 s
-
-
62.5
Characteristics
Thermal resistance, junction - soldering point
RthJS
SMD version, device on PCB:
RthJA
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Symbol
Parameter
Values
Unit
min.
typ.
max.
V(BR)DSS
55
-
-
VGS(th)
1.2
1.6
2
Static Characteristics
Drain-source breakdown voltage
V
V GS=0V, I D=1mA
Gate threshold voltage, VGS = VDS
ID=30µA
Zero gate voltage drain current
µA
IDSS
V DS=55V, V GS=0V, Tj=25°C
-
0.01
1
V DS=55V, V GS=0V, Tj=150°C
-
1
100
IGSS
-
1
100
nA
RDS(on)
-
38
44
mΩ
RDS(on)
-
31
35
Gate-source leakage current
V GS=20V, VDS=0V
Drain-source on-state resistance
V GS=4.5V, ID=2.5A
Drain-source on-state resistance
V GS=10V, ID=2.5A
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
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2003-10-28
BSO604NS2
Electrical Characteristics
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
6.7
13.4
-
S
pF
Dynamic Characteristics
Transconductance
gfs
V DS≥ 2 * ID *
RDS(on)max=0.4V, ID =5A
Input capacitance
Ciss
V GS=0V, VDS=25V,
-
656
870
Output capacitance
Coss
f=1MHz
-
154
205
Reverse transfer capacitance
Crss
-
49
75
Turn-on delay time
td(on)
V DD=27.5V, VGS=4.5V,
-
9
14
Rise time
tr
ID=5A,
-
8
13
Turn-off delay time
td(off)
RG=75Ω
-
52
78
Fall time
tf
-
8
12
-
2
3
-
6.6
10
-
19.7
26
V(plateau) VDD =44V, ID=5A
-
2.9
-
V
IS
-
-
5
A
-
-
20
ns
Gate Charge Characteristics
Gate to source charge
Qgs
Gate to drain charge
Qgd
Gate charge total
Qg
VDD =44V, ID=5A
VDD =44V, ID=5A,
nC
VGS =0 to 10V
Gate plateau voltage
Reverse Diode
Inverse diode continuous
TA=25°C
forward current
Inv. diode direct current, pulsed
ISM
Inverse diode forward voltage
VSD
VGS =0V, IF=5A
-
0.9
1.3
V
Reverse recovery time
trr
VR =27.5V, IF =lS ,
-
32
40
ns
Reverse recovery charge
Qrr
diF/dt=100A/µs
-
34
43
nC
Page 3
2003-10-28
BSO604NS2
1 Power dissipation
2 Drain current
Ptot = f (TA)
ID = f (TA)
parameter: V GS≥ 6 V
parameter: V GS≥ 10 V
2.2
BSO604NS2
R
W
1.8
4.5
1.6
4
1.4
3.5
1.2
3
1
2.5
0.8
2
0.6
1.5
0.4
1
0.2
0.5
0
0
20
BSO604NS2
A
thJC
thJA
ID
Ptot
5.5
40
60
80
100
120
°C
0
0
160
20
40
60
80
100
120
TA
°C
3 Safe operating area
4 Max. transient thermal impedance
ID = f ( V DS )
ZthJC = f (t p)
parameter : D = 0 , TA = 25 °C
parameter : D = t p/T
10
2 BSO604NS2
10 2
RD
VD
S
tp = 46.0µs
10 1
100 µs
ID
ZthJC
10 1
S(
)
on
=
BSO604NS2
K/W
/I D
A
160
TA
10 0
1 ms
10
0
10 -1
10 ms
D = 0.50
0.20
10
0.10
-2
0.05
10 -1
0.02
10 -3
DC
10 -2 -1
10
10
0
10
1
V
10
2
VDS
10 -4 -7
10
0.01
single pulse
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
tp
Page 4
2003-10-28
0
BSO604NS2
5 Typ. output characteristic
6 Typ. drain-source on resistance
ID = f (VDS); Tj=25°C
RDS(on) = f (ID)
parameter: tp = 80 µs
parameter: V GS
A
h
120
Ptot = 2W
gf
e d
10
9
c
ID
8
7
6
c
b
3.2
c
3.4
d
3.6
e
3.8
f
4.0
g
4.5
h
10.0
100
d
90
80
e
70
60
b
5
f
50
4
g
40
3
20
1
10
0.5
1
1.5
2
2.5
3
3.5
h
30
a
2
0
0
BSO604NS2
mΩ
VGS [V]
a
3.0
RDS(on)
12
BSO604NS2
4
V
0
0
5
VGS [V] =
c
3.4
1
d
3.6
e
f
3.8 4.0
2
3
g
h
4.5 10.0
4
5
6
7
8
VDS
A
10
ID
7 Typ. transfer characteristics
8 Typ. forward transconductance
ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
g fs = f(ID); Tj=25°C
parameter: tp = 80 µs
parameter: gfs
20
24
A
S
20
16
18
gfs
ID
14
12
16
14
10
12
8
10
8
6
6
4
4
2
0
0
2
0.5
1
1.5
2
2.5
3
4
V
VGS
Page 5
0
0
2
4
6
8
10
12
14
16
A
ID
20
2003-10-28
BSO604NS2
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
RDS(on) = f (Tj)
VGS(th) = f (Tj)
parameter : ID = 2.5 A, VGS = 10 V
parameter: V GS = VDS
110
BSO604NS2
2.5
mΩ
V
VGS(th)
RDS(on)
90
80
70
150 µA
1.5
60
30 µA
50
1
98%
40
typ
30
0.5
20
10
0
-60
-20
20
60
100
°C
0
-60
180
-20
20
60
°C
100
180
Tj
Tj
11 Typ. capacitances
12 Forward character. of reverse diode
C = f (VDS)
IF = f (VSD)
parameter: V GS=0V, f=1 MHz
parameter: Tj , tp = 80 µs
10
4
10 2
pF
BSO604NS2
A
Ciss
10 1
C
IF
10 3
Coss
10 2
10 0
Crss
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
10 1
0
5
10
15
20
30
V
VDS
10 -1
0
0.4
0.8
1.2
1.6
2
2.4 V
3
VSD
Page 6
2003-10-28
BSO604NS2
13 Typ. avalanche energy
14 Typ. gate charge
EAS = f (Tj)
VGS = f (QGate)
par.: ID = 5 A , VDD = 25 V, RGS = 25 Ω
parameter: ID = 5 A pulsed
90
16
mJ
V
70
12
60
VGS
EAS
BSO604NS2
10
0,2 VDS max
50
8
0,8 VDS max
40
6
30
4
20
2
10
0
25
45
65
85
105
125
145
°C 185
Tj
0
0
4
8
12
16
20
24 nC
30
QGate
15 Drain-source breakdown voltage
V(BR)DSS = f (Tj)
parameter: ID=10 mA
66
BSO604NS2
V(BR)DSS
V
62
60
58
56
54
52
50
-60
-20
20
60
100
°C
180
Tj
Page 7
2003-10-28
BSO604NS2
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Further information
Please notice that the part number is BBSO604NS2, for simplicity the device is referred to by the term
BSO604NS2 throughout this documentation.
Page 8
2003-10-28
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