2SD669, 2SD669A Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB649/A Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 2SD669, 2SD669A Absolute Maximum Ratings (Ta = 25°C) Ratings Item Symbol 2SD669 2SD669A Unit Collector to base voltage VCBO 180 180 V Collector to emitter voltage VCEO 120 160 V Emitter to base voltage VEBO 5 5 V Collector current IC 1.5 1.5 A Collector peak current I C(peak) 3 3 A Collector power dissipation PC 1 1 W 20 20 W PC * 1 Junction temperature Tj 150 150 °C Storage temperature Tstg –55 to +150 –55 to +150 °C Note: 2 1. Value at TC = 25°C. 2SD669, 2SD669A Electrical Characteristics (Ta = 25°C) 2SD669 2SD669A Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 180 — — 180 — — V I C = 1 mA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO 120 — — 160 — — V I C = 10 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 5 — — 5 — — V I E = 1 mA, IC = 0 Collector cutoff current I CBO — — 10 — — 10 µA VCB = 160 V, IE = 0 60 — 320 60 — 200 VCE = 5 V, IC = 150 mA*2 hFE2 30 — — 30 — — VCE = 5 V, IC = 500 mA*2 VCE(sat) — — 1 — — 1 V I C = 500 mA, I B = 50 mA*2 Base to emitter voltage VBE — — 1.5 — — 1.5 V VCE = 5 V, IC = 150 mA*2 Gain bandwidth product f T — 140 — — 140 — MHz VCE = 5 V, IC = 150 mA*2 Collector output capacitance — 14 — — 14 — pF VCB = 10 V, IE = 0, f = 1 MHz DC current transfer ratio hFE1* Collector to emitter saturation voltage 1 Cob Notes: 1. The 2SD669 and 2SD669A are grouped by h FE1 as follows. 2. Pulse test. B C D 2SD669 60 to 120 100 to 200 160 to 320 2SD669A 60 to 120 100 to 200 — Maximum Collector Dissipation Curve Area of Safe Operation 3 Collector current IC (A) Collector power dissipation PC (W) 30 20 10 (13.3 V, 1.5 A) 1.0 (40 V, 0.5 A) 0.3 DC Operation(TC = 25°C) 0.1 (120 V, 0.04 A) 0.03 (160 V, 0.02A) 2SD669 2SD669A 0.01 0 50 100 Case temperature TC (°C) 150 1 3 10 30 100 300 Collector to emitter voltage VCE (V) 3 2SD669, 2SD669A Typical Output Characteristecs 0.6 TC = 25°C P C 2.0 = 20 W 1.5 0.4 1.0 0.2 0.5 mA VCE = 5 V 200 100 50 20 10 25 –25 0.8 Ta = 75°C 5 5. 5.40.5 .0 4 3.5 3.0 2.5 Typical Transfer Characteristics 500 Collector current IC (mA) Collector current IC (A) 1.0 5 2 IB = 0 25 200 –25 150 100 VCE = 5 V 1 1 4 3 10 100 300 1,000 3,000 30 Collector current IC (mA) IC = 10 IB 1.0 0.8 0.6 5° C 250 1.2 0.4 =7 T Collector to Emitter Saturation Voltage vs. Collector Current 0.2 –2 25 5 5°C a=7 0.2 0.4 0.6 0.8 1.0 Base to emitter voltage VBE (V) C DC current transfer ratio hFE 300 0 T DC Current Transfer Ratio vs. Collector Current 50 1 10 20 30 40 50 Collector to emitter voltage VCE (V) Collector to emitter saturation voltage VCE(sat) (V) 0 0 1 3 10 30 100 300 Collector current IC (mA) 1,000 2SD669, 2SD669A Gain Bandwidth Product vs. Collector Current 240 1.2 Gain bandwidth product fT (MHz) IC = 10 IB 1.0 25°C TC = – 25 75 0.8 0.6 0.4 0.2 0 1 3 10 30 100 300 Collector current IC (mA) 1,000 200 VCE = 5 V Ta = 25°C 160 120 80 40 0 10 30 100 300 Collector current IC (mA) 1,000 Collector Output Capacitance vs. Collector to Base Voltage Collector output capacitance Cob (pF) Base to emitter saturation voltage VBE(sat) (V) Base to Emitter Saturation Voltage vs. Collector Current 200 f = 1 MHz IE = 0 100 50 20 10 5 2 1 10 2 5 20 50 100 Collector to base voltage VCB (V) 5 Unit: mm 2.7 ± 0.4 120° 3.7 ± 0.7 11.0 ± 0.5 12 0° 2.3 ± 0.3 φ 3.1 +0.15 –0.1 12 0° 8.0 ± 0.5 15.6 ± 0.5 1.1 0.8 2.29 ± 0.5 2.29 ± 0.5 0.55 1.2 Hitachi Code JEDEC EIAJ Weight (reference value) TO-126 Mod — — 0.67 g Cautions 1. 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