Siemens BAT68-05W Silicon schottky diodes (for mixer applications in the vhf/uhf range for high speed switching) Datasheet

BAT 68W
Silicon Schottky Diodes
Preliminary data
• For mixer applications in the VHF/UHF range
• For high speed switching
BAT 68-04W
BAT68-05W
BAT68-06W
Type
Marking Ordering Code
Pin Configuration
Package
BAT 68-04W
84s
Q62702-
1 = A1
2 = K2
3 = K1/A2 SOT-323
BAT 68-05W
85s
Q62702-
1 = A1
2 = A2
3 = K1/K2 SOT-323
BAT 68-06W
86s
Q62702-
1 = K1
2 = K2
3 = A1/A2 SOT-323
BAT 68W
83s
Q62702-
1=A
n.c.
3=K
SOT-323
Maximum Ratings
Parameter
Symbol
Diode reverse voltage
VR
8
V
Forward current
IF
130
mA
Ptot
150
mW
Total power dissipation, BAW68-04...06W TS=92°C Ptot
Junction temperature
Tj
150
Total power dissipation, BAT68W
TS=97°C
Values
Unit
150
°C
Operating temperature range
Top
- 65 ... + 150
Storage temperature
Tstg
- 65 ... + 150
Thermal Resistance
Junction - ambient, BAT68W
RthJA
≤ 435
Junction - ambient, BAT68-04W...06W
RthJA
≤ 550
Junctui - soldering point, BAT68W
RthJS
≤ 355
Junction - soldering point, BAT68-04W...06W
RthJS
390
Semiconductor Group
1
K/W
Dec-20-1996
BAT 68W
Electrical Characteristics at TA=25°C, unless otherwise specified
Parameter
Symbol
Values
min.
Unit
typ.
max.
DC characteristics
V(BR)
Breakdown voltage
V
I(BR) = 100 µA
8
-
-
IR
Reverse current
µA
VR = 1 V, TA = 25 °C
-
-
0.1
VR = 1 V, TA = 60 °C
-
-
1.2
VF
Forward voltage
mV
IF = 1 mA
-
318
340
IF = 10 mA
340
390
500
CT
Diode capacitance
pF
VR = 1 V, f = 1 MHz
-
-
1
Ω
RF
Differential forward resistance
IF = 5 mA
-
Forward current IF = f (TA*;TS)
-
10
Forward current IF = f (TA*;TS)
*): mounted on alumina 15mm x 16.7mm x 0.7mm *): mounted on alumina 15mm x 16.7mm x 0.7mm
BAT 68W
IF
BAT 68-04W, -05W, -06W
200
200
mA
mA
160
IF
140
160
140
120
120
TS
TA
100
80
80
60
60
40
40
20
20
0
TS
TA
100
0
0
20
40
60
Semiconductor Group
80
100
120 °C 150
TA ,TS
2
0
20
40
60
80
100
120 °C 150
TA ,TS
Dec-20-1996
BAT 68W
Permissible Pulse Load RTHJS = f(tp)
BAT 68W
Permissible Pulse Load IFmax/IFDC = f(tp)
BAT 68W
10 2
10 3
K/W
RthJS
IFmax/IFDC
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 2
10 1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10 1
10 0
-7
10
10
-6
10
-5
10
-4
10
-3
10
-2
-1
10 s 10
tp
0
Permissible Pulse Load RTHJS = f(tp)
BAT 68-04W, -05W, -06W
10 0
-7
10
10
-6
10
-5
10
-4
10
-3
10
-2
-1
10 s 10
tp
0
Permissible Pulse Load IFmax/IFDC = f(tp)
BAT 68-04W, -05W, -06W
10 2
10 3
K/W
RthJS
IFmax/IFDC
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 2
10 1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10 1
10 0
-7
10
10
-6
10
-5
10
Semiconductor Group
-4
10
-3
10
-2
-1
10 s 10
tp
0
3
10 0
-7
10
10
-6
10
-5
10
-4
10
-3
10
-2
-1
10 s 10
tp
0
Dec-20-1996
BAT 68W
Diode capacitance CT = f (VR)
f = 1MHz
Differential forward resistance rf = f(IF)
f = 10kHz
Forward Current IF = f(VF)
Reverse current IR = f (TA)
VR = 28V
Semiconductor Group
4
Dec-20-1996
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