TRENCHSTOPTM Series IKP04N60T q Low Loss DuoPack : IGBT in TRENCHSTOPTM and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode • • • • • • • • • • • • C Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5µs Designed for: - Frequency Converters - Drives TM TRENCHSTOP and Fieldstop technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed - low VCE(sat) Positive temperature coefficient in VCE(sat) Low EMI Low Gate Charge Very soft, fast recovery anti-parallel Emitter Controlled HE diode 1) Qualified according to JEDEC for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/ Type IKP04N60T G VCE IC VCE(sat),Tj=25°C Tj,max Marking Package 600V 4A 1.5V 175°C K04T60 PG-TO220-3 E Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage, Tj ≥ 25°C VCE 600 DC collector current, limited by Tjmax TC = 25°C TC = 100°C IC 9.5 6.5 Pulsed collector current, tp limited by Tjmax ICpuls 12 Turn off safe operating area, VCE = 600V, Tj = 175°C, tp = 1µs - 12 Diode forward current, limited by Tjmax TC = 25°C TC = 100°C IF 9.5 6.5 Diode pulsed current, tp limited by Tjmax IFpuls 12 Gate-emitter voltage VGE ±20 V VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C tSC 5 µs Power dissipation TC = 25°C Ptot 42 W Operating junction temperature Tj -40...+175 Storage temperature Tstg -55...+150 Soldering temperature, 1.6mm (0.063 in.) from case for 10s - V A 2) Short circuit withstand time 1) 2) °C 260 J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. IFAG IPC TD VLS 1 Rev. 2.8 17.02.2016 TRENCHSTOPTM Series IKP04N60T q Thermal Resistance Parameter Symbol Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resistance, junction – ambient Conditions Max. Value RthJC 3.5 RthJCD 5 RthJA 62 Unit K/W Electrical Characteristic, at Tj = 25°C, unless otherwise specified Parameter Symbol Conditions Value min. Typ. max. 600 - - T j=25° C - 1.5 2.05 T j=175° C - 1.9 - Unit Static Characteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V, IC=0.2mA VGE = 15V, IC=4A Collector-emitter saturation voltage VCE(sat) V VGE=0V, IF=4A Diode forward voltage VF Gate-emitter threshold voltage VGE(th) T j=25° C - 1.65 2.05 T j=175° C - 1.6 - 4.1 4.9 5.7 - - 40 IC= 60µA,VCE=VGE VCE=600V, VGE=0V Zero gate voltage collector current ICES T j=25° C T j=175° C µA - - 1000 Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V, IC=4A - 2.2 - S Integrated gate resistor RG in t Ω - Dynamic Characteristic Cies VCE=25V, - Output capacitance Coes VGE=0V, Reverse transfer capacitance Cres f=1MHz Gate charge QGate VCC=480V, IC=4A - Input capacitance Internal emitter inductance measured 5mm (0.197 in.) from case 1) Short circuit collector current 1) - - 20 - - 7.5 - VGE=15V - LE IC(SC) 252 V G E = 1 5 V , t S C ≤ 5 µs VCC = 400V, T j ≤ 150° C 27 7 - - pF nC nH 36 A Allowed number of short circuits: <1000; time between short circuits: >1s. IFAG IPC TD VLS 2 Rev. 2.8 17.02.2016 TRENCHSTOPTM Series IKP04N60T q Switching Characteristic, Inductive Load, at Tj=25 °C Parameter Symbol Conditions Value min. Typ. max. - 14 - - 7 - - 164 - - 43 - - 61 - - 84 - - 145 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j =2 5 °C , V C C = 40 0 V, I C = 4 A, V G E = 0/ 15 V , R G = 4 7Ω , 1) L σ =1 5 0n H, 1) C σ = 4 7p F Energy losses include “tail” and diode reverse recovery. Diode reverse recovery time trr T j =2 5 °C , - 28 - ns Diode reverse recovery charge Qrr V R = 4 00 V , I F = 4 A, - 79 - nC Diode peak reverse recovery current Irrm d i F / d t =6 1 0 A/ µs - 5.3 - A Diode peak rate of fall of reverse recovery current during t b d i r r /d t ns µJ Anti-Parallel Diode Characteristic - 346 - A/µs Switching Characteristic, Inductive Load, at Tj=175°C Parameter Symbol Conditions Value min. Typ. max. - 14 - - 10 - - 185 - - 83 - - 99 - - 97 - - 196 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j =1 7 5° C, V C C = 40 0 V, I C = 4 A, V G E = 0/ 15 V , R G = 4 7Ω 1) L σ =1 5 0n H, 1) C σ = 4 7p F Energy losses include “tail” and diode reverse recovery. Diode reverse recovery time trr T j =1 7 5° C - 95 - ns Diode reverse recovery charge Qrr V R = 4 00 V , I F = 4 A, - 291 - nC Diode peak reverse recovery current Irrm d i F / d t =6 1 0 A/ µs - 6.6 - A Diode peak rate of fall of reverse recovery current during t b d i r r /d t ns µJ Anti-Parallel Diode Characteristic 1) - 253 - A/µs Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E. IFAG IPC TD VLS 3 Rev. 2.8 17.02.2016 TRENCHSTOPTM Series t p=2µs 10A 12A 10A IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT IKP04N60T q T C =80°C 8A T C =110°C 6A 4A Ic 2A 10µs 1A 50µs 1ms 0.1A Ic DC 10ms 0A 10H z 100H z 1kH z 10kH z 1V 100kH z f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj ≤ 175°C, D = 0.5, VCE = 400V, VGE = 0/15V, RG = 47Ω) 1000V 8A IC, COLLECTOR CURRENT Ptot, POWER DISSIPATION 100V VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25°C, Tj ≤175°C; VGE=0/15V) 40W 30W 20W 10W 0W 25°C 10V 6A 4A 2A 50°C 75°C 0A 25°C 100°C 125°C 150°C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj ≤ 175°C) IFAG IPC TD VLS 4 75°C 125°C TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE ≥ 15V, Tj ≤ 175°C) Rev. 2.8 17.02.2016 TRENCHSTOPTM Series 8A 10A V G E =20V IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 10A 15V 13V 6A 11V 9V 4A 7V 2A V G E =20V 8A 15V 13V 6A 11V 9V 4A 7V 2A 0A 0A 0V 1V 2V 3V 0V 8A 6A 4A 2A T J = 1 7 5 °C 2 5 °C 0A 0V 2V 4V 6V 2V 2.5V 3V IC =8A 2.0V 1.5V IC =4A 1.0V IC =2A 0.5V 0.0V 0°C 8V VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V) IFAG IPC TD VLS 1V VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 175°C) VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25°C) IC, COLLECTOR CURRENT IKP04N60T q 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) 5 Rev. 2.8 17.02.2016 TRENCHSTOPTM Series IKP04N60T q t d(off) t d(off) tf t d(on) 10ns t, SWITCHING TIMES t, SWITCHING TIMES 100ns tr 100ns tf t d(on) 10ns tr 1ns 0A 2A 4A 50Ω 6A IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=175°C, VCE = 400V, VGE = 0/15V, RG = 47Ω, Dynamic test circuit in Figure E) 100Ω 150Ω 200Ω 250Ω RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ = 175°C, VCE= 400V, VGE = 0/15V, IC = 4A, Dynamic test circuit in Figure E) t d(off) 100ns t, SWITCHING TIMES tf t d(on) 10ns tr 25°C 50°C 75°C 6V m ax. typ. 5V 4V m in. 3V 2V 1V 0V -50°C 100°C 125°C 15 0°C TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 4A, RG=47Ω, Dynamic test circuit in Figure E) IFAG IPC TD VLS VGE(th), GATE-EMITT TRSHOLD VOLTAGE 7V 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 60µA) 6 Rev. 2.8 17.02.2016 TRENCHSTOPTM Series *) E on and E ts include losses *) E on an d E ts in c lu d e lo s s es due to diode recovery E ts * 0 .3m J E off 0 .2m J E on* 0 .1m J E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES d u e to d io de re c ov e ry 0.4 mJ E ts* 0.3 mJ E off 0.2 mJ E on* 0.1 mJ 0.0 mJ 0 .0m J 0A 2A 4A 25Ω 50Ω 6A IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ = 175°C, VCE = 400V, VGE = 0/15V, RG = 47Ω, Dynamic test circuit in Figure E) E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES due to diode recovery E ts * 100µJ E off 75µJ 50µJ E on * 25µJ 0µJ 25°C 50°C 75°C 100°C 125°C 150°C TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 4A, RG = 47Ω, Dynamic test circuit in Figure E) IFAG IPC TD VLS 150Ω 200Ω 250Ω *) E on a nd E ts inc lud e lo ss es 150µJ 125µJ 100Ω RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ = 175°C, VCE = 400V, VGE = 0/15V, IC = 4A, Dynamic test circuit in Figure E) *) E on and E ts include losses 175µJ IKP04N60T q d ue to diod e rec ov ery 0.2 5m J 0.2 0m J E ts * 0.1 5m J 0.1 0m J E off 0.0 5m J E on * 0.0 0m J 30 0V 35 0V 4 00 V 4 50 V VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ = 175°C, VGE = 0/15V, IC = 4A, RG = 47Ω, Dynamic test circuit in Figure E) 7 Rev. 2.8 17.02.2016 TRENCHSTOPTM Series IKP04N60T q 15V 120V c, CAPACITANCE VGE, GATE-EMITTER VOLTAGE Cies 480V 10V 100pF Coes 5V 10pF 0V 0nC 5 nC Cres 0V 10nC 15nC 20nC 25nC 30nC QGE, GATE CHARGE Figure 17. Typical gate charge (IC=4A) 10V 20V 30V 40V 50V 60V 70V VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1MHz) 60A tSC, SHORT CIRCUIT WITHSTAND TIME IC(sc), short circuit COLLECTOR CURRENT 1 2µs 50A 40A 30A 20A 10A 0A 12V 14V 16V 8µs 6µs 4µs 2µs 0µs 1 0V 18V VGE, GATE-EMITTETR VOLTAGE Figure 19. Typical short circuit collector current as a function of gateemitter voltage (VCE ≤ 400V, Tj ≤ 150°C) IFAG IPC TD VLS 1 0µs 11V 1 2V 13V 1 4V VGE, GATE-EMITETR VOLTAGE Figure 20. Short circuit withstand time as a function of gate-emitter voltage (VCE=400V, start at TJ=25°C, TJmax<150°C) 8 Rev. 2.8 17.02.2016 TRENCHSTOPTM Series D=0.5 ZthJC, TRANSIENT THERMAL IMPEDANCE ZthJC, TRANSIENT THERMAL IMPEDANCE D=0.5 0 10 K/W 0.2 R,(K/W ) 0.38216 0.68326 1.49884 0.93550 0.1 τ, (s) 5.16*10-2 7.818*10-3 9*10-4 1.134*10-4 R1 R2 0.05 -1 10 K/W 0.02 0.01 C 1 = τ 1 /R 1 C 2 = τ 2 /R 2 single pulse 1µs 10µs 100µs 1m s tP, PULSE WIDTH 0.2 0 R,(K/W ) 0.29183 0.79081 1.86970 2.04756 10 K/W 0.1 0.05 -1 10 K/W R1 0.02 R2 C 1 = τ 1 /R 1 C 2 = τ 2 /R 2 single pulse 1µs 280ns 10µs 100µs 1m s 240ns TJ=175°C 160ns 120ns TJ=25°C 40ns Qrr, REVERSE RECOVERY CHARGE 0.35µC 80ns 6.53*10 10m s 100m s tP, PULSE WIDTH Figure 22. Diode transient thermal impedance as a function of pulse width (D=tP/T) (D = tp/T) 200ns τ, (s) 7.018*10-2 1.114*10-2 1.236*10-3 2.101*10-4 0.01 10m s 100m s Figure 21. IGBT transient thermal impedance trr, REVERSE RECOVERY TIME IKP04N60T q T J=175°C 0.30µC 0.25µC 0.20µC T J=25°C 0.15µC 0.10µC 0.05µC 0.00µC 0ns 400A/µs 400A/µs 600A/µs diF/dt, DIODE CURRENT SLOPE Figure 23. Typical reverse recovery time as a function of diode current slope (VR=400V, IF=4A, Dynamic test circuit in Figure E) IFAG IPC TD VLS 9 600A/µs diF/dt, DIODE CURRENT SLOPE Figure 24. Typical reverse recovery charge as a function of diode current slope (VR = 400V, IF = 4A, Dynamic test circuit in Figure E) Rev. 2.8 17.02.2016 TRENCHSTOPTM Series T J =175°C T J=175°C 8A 6A T J =25°C 4A 2A dirr/dt, DIODE PEAK RATE OF FALL OF REVERSE RECOVERY CURRENT Irr, REVERSE RECOVERY CURRENT 10A T J=25°C -200A/µs -100A/µs 600A/µs diF/dt, DIODE CURRENT SLOPE Figure 25. Typical reverse recovery current as a function of diode current slope (VR = 400V, IF = 4A, Dynamic test circuit in Figure E) 400A/µs 600A/µs diF/dt, DIODE CURRENT SLOPE Figure 26. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR=400V, IF=4A, Dynamic test circuit in Figure E) 10A I F =8A 2.0V VF, FORWARD VOLTAGE IF, FORWARD CURRENT -300A/µs 0A/µs 0A 400A /µs IKP04N60T q 8A 6A T J =25°C 4A 175°C 4A 1.5V 2A 1.0V 0.5V 2A 0A 0V 1V 2V VF, FORWARD VOLTAGE Figure 27. Typical diode forward current as a function of forward voltage IFAG IPC TD VLS 10 0.0V 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 28. Typical diode forward voltage as a function of junction temperature Rev. 2.8 17.02.2016 TRENCHSTOPTM Series IFAG IPC TD VLS 11 IKP04N60T q Rev. 2.8 17.02.2016 TRENCHSTOPTM Series IFAG IPC TD VLS 12 IKP04N60T q Rev. 2.8 17.02.2016 TRENCHSTOPTM Series IKP04N60T q Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2016. All Rights Reserved. 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Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. IFAG IPC TD VLS 13 Rev. 2.8 17.02.2016