ETC BUZ905DP P-channel power mosfet for audio application Datasheet

BUZ905DP
BUZ906DP
MAGNA
TEC
MECHANICAL DATA
Dimensions in mm
20.0
P–CHANNEL
POWER MOSFET
5.0
3.3 Dia.
POWER MOSFETS FOR
AUDIO APPLICATIONS
FEATURES
1
2
3
• HIGH SPEED SWITCHING
2.0
2.0
• P–CHANNEL POWER MOSFET
1.0
• SEMEFAB DESIGNED AND DIFFUSED
3.4
• HIGH VOLTAGE (160V & 200V)
• HIGH ENERGY RATING
0.6
1.2
2.8
• INTEGRAL PROTECTION DIODE
5.45 5.45
TO–3PBL
Pin 1 – Gate
Pin 2 – Source
Case is Source
• ENHANCEMENT MODE
Pin 3 – Drain
• N–CHANNEL ALSO AVAILABLE AS
BUZ900DP & BUZ901DP
• DOUBLE DIE PACKAGE FOR MAXIMUM
POWER AND HEATSINK SPACE
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated)
VDSX
Drain – Source Voltage
BUZ905DP
-160V
BUZ906DP
-200V
VGSS
Gate – Source Voltage
±14V
ID
Continuous Drain Current
-16A
ID(PK)
Body Drain Diode
-16A
PD
Total Power Dissipation
Tstg
Storage Temperature Range
Tj
Maximum Operating Junction Temperature
RθJC
Thermal Resistance Junction – Case
Magnatec.
@ Tcase = 25°C
Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.
250W
–55 to 150°C
150°C
0.5°C/W
Prelim. 2/95
BUZ905DP
BUZ906DP
MAGNA
TEC
STATIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Characteristic
Test Conditions
Min.
VGS = 10V
BUZ905DP
-160
ID = -10mA
BUZ906DP
-200
Gate – Source Breakdown Voltage
VDS = 0
IG = ±100µA
±14
VGS(OFF)
Gate – Source Cut–Off Voltage
VDS = -10V
ID = -100mA
-0.1
VDS(SAT)*
Drain – Source Saturation Voltage
VGD = 0
ID = -16A
BVDSX
Drain – Source Breakdown Voltage
BVGSS
Typ.
Drain – Source Cut–Off Current
V
VDS = -10V
Forward Transfer Admittance
V
-12
V
mA
VDS = -200V
-10
BUZ906DP
yfs*
-1.5
-10
BUZ905DP
VGS = 10V
Unit
V
VDS = -160V
IDSX
Max.
ID = -3A
1.4
4
S
Max.
Unit
DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Characteristic
Test Conditions
Min.
Typ.
Ciss
Input Capacitance
1900
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
ton
Turn–on Time
VDS = 20V
150
toff
Turn-off Time
ID = 7A
110
VDS = 10V
900
f = 1MHz
pF
60
ns
* Pulse Test: Pulse Width = 300µs , Duty Cycle ≤ 2%.
Derating Chart
300
CH AN NE L D ISS IP ATION (W )
250
200
150
100
50
0
0
25
50
75
100
125
150
TC — CASE TEMPERATURE (˚C)
Magnatec.
Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.
Prelim. 2/95
BUZ905DP
BUZ906DP
MAGNA
TEC
Typical Output Characteristics
-22
-20
-20
TC = 25˚C
-18
-6V
-14
-5V
-12
-10
-4V
H
-8
=
25
0W
-3V
-6
-4
-16
-7V
-14
-6V
-12
-5V
-10
PC
I D — D R AIN C U RR EN T (A)
-16
TC = 75˚C
-18
-7V
PC
I D — D R AIN C U RR EN T (A)
Typical Output Characteristics
-22
H
-4V
-8
=
25
0W
-6
-3V
-4
-2V
-2V
-2
-2
-1V
-1V
0
0
0
-10
-20
-30
-40
-50
-60
0
-70
-10
-20
V DS — DRAIN – SOURCE VOLTAGE (V)
Forward Bias Safe Operating Area
-100
-30
-40
-50
-60
-70
V DS — DRAIN – SOURCE VOLTAGE (V)
Transconductance
100
V DS = 20V
G FS — TR AN SC ON DU C TAN CE (S)
-10
DC
OP
ER
AT
IO
N
-1
BUZ905D
BUZ906D
-0.1
10
TC = 25˚C
TC = 75˚C
1
-200V
-160V
I D — D R AIN C U RR EN T (A)
TC = 25˚C
0.1
-1
-10
-100
-1000
0
2
4
V DS — DRAIN – SOURCE VOLTAGE (V)
6
8
10
12
14
16
I D — DRAIN CURRENT (A)
Drain – Source Voltage
vs
Gate – Source Voltage
-16
V DS = -10V
-18
-12
-10
I D — D RA IN C UR R EN T (A)
V DS — DR AIN – S OU RC E V OLTAGE (V )
-20
TC = 25˚C
-14
Typical Transfer Characteristics
-22
I D = -14A
-8
-6
I D = -9A
-4
I D = -5A
TC = 25˚C
-16
TC = 75˚C
-14
TC = 100˚C
-12
-10
-8
-6
-4
-2
-2
I D = -3A
0
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
0
V GS — GATE – SOURCE VOLTAGE (V)
Magnatec.
Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.
-1
-2
-3
-4
-5
-6
-7
-8
-9
-10
-11
V GS — GATE – SOURCE VOLTAGE (V)
Prelim. 2/95
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