IXYS MEO500-06DA Fast recovery epitaxial diode (fred) module Datasheet

MEO 500-06 DA
Fast Recovery
Epitaxial Diode
(FRED) Module
VRRM = 600 V
IFAVM = 514 A
trr
= 250 ns
Preliminary data
3
3
VRSM
VRRM
V
V
600
600
1
1
Type
MEO 500-06DA
Symbol
Test Conditions
Maximum Ratings
IFRMS
IFAVM ÿÿ①
IFRM
TC = 75°C
TC = 75°C; rectangular, d = 0.5
tP < 10 ms; rep. rating, pulse width limited by TVJM
726
514
2680
A
A
A
IFSM
TVJ = 45°C;
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
4800
5280
A
A
TVJ = 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
4320
4750
A
A
Features
International standard package
with DCB ceramic base plate
Planar passivated chips
Short recovery time
Low switching losses
Soft recovery behaviour
Isolation voltage 3600 V~
UL registered E 72873
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t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
115200
117100
A2s
A2s
TVJ = 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
93300
94800
A2s
A2s
-40...+150
-40...+125
110
°C
°C
°C
TVJ = 45°C;
TVJ
Tstg
TSmax
Ptot
TC = 25°C
1750
W
VISOL
50/60 Hz, RMS t = 1 min
IISOL £ 1 mA
t=1s
3000
3600
V~
V~
Md
Mounting torque (M6)
Terminal connection torque (M6)
dS
dA
a
Creeping distance on surface
Strike distance through air
Maximum allowable acceleration
2.25-2.75/20-25 Nm/lb.in.
4.50-5.50/40-48 Nm/lb.in.
Weight
12.7
9.6
50
mm
mm
m/s2
150
g
Symbol
Test Conditions
IR
TVJ = 25°C
TVJ = 25°C
TVJ = 125°C
VR = VRRM
VR = 0.8 • VRRM
VR = 0.8 • VRRM
24
6
160
mA
mA
mA
VF
IF = 300 A;
TVJ
TVJ
TVJ
TVJ
1.17
1.36
1.41
1.52
V
V
V
V
0.85
1.09
V
mW
0.114
0.071
K/W
K/W
300
88
132
ns
A
A
IF = 520 A;
Characteristic Values (per diode)
typ.
max.
= 125°C
= 25°C
= 125°C
= 25°C
VT0
rT
For power-loss calculations only
RthJH
RthJC
DC current
DC current
trr
IRM
IF = 600 A
VR= 300 V
-di/dt = 800 A/ms
TVJ = 100°C
TVJ = 25°C
TVJ = 100°C
250
① IFAVM rating includes reverse blocking losses at TVJM, VR = 0.6 VRRM, duty cycle d = 0.5
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
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Applications
Antiparallel diode for high frequency
switching devices
Free wheeling diode in converters
and motor control circuits
Inductive heating and melting
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
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Advantages
High reliability circuit operation
Low voltage peaks for reduced
protection circuits
Low noise switching
Low losses
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Dimensions in mm (1 mm = 0.0394")
749
I2t
1-2
MEO 500-06 DA
800
20 T = 100°C
VJ
V = 300V
µC R
A
IF
200 T = 100°C
VJ
VR = 300V
A
IRM
Qr 15
600
TVJ=125°C
TVJ=25°C
400
150
IF=1200A
IF= 600A
IF= 300A
10
200
IF=1200A
100 IF= 600A
IF= 300A
5
0
0.0
0.4
0.8
1.2
50
0
100
1.6 V 2.0
VF
Fig. 1 Forward current IF versus
max. voltage drop VF per leg
Fig. 2 Typ. reverse recovery
charge Qr versus -diF/dt
1.4
450
V
Qr
250
0.4
200
120 °C 160
0
200
400
TVJ
Fig. 4 Dynamic parameters Qr, IRM
versus junction temperature TVJ
3.0
µs
2.5
tfr
2.0
VFR
IF=1200A
IF= 600A
IF= 300A
300
IRM
80
TVJ= 100°C
IF = 600A
VFR
350
40
ms 1000
600 A/
800
-diF/dt
40
1.0
0
400
tfr
50
trr
0.6
200
60
400
0.8
0
Fig. 3 Typ. peak reverse current IRM
versus -diF/dt
TVJ= 100°C
VR = 300V
ns
1.2
Kf
0
A/ms 1000
-diF/dt
ms 1000
600 A/
800
-diF/dt
30
1.5
20
1.0
10
0.5
0
0
200
400
0.0
600 A/
800
ms 1000
diF/dt
Fig. 6 Typ. peak forward voltage VFR
and tfr versus diF/dt
Fig. 5 Typ. recovery time trr
versus -diF/dt
0.12
Constants for ZthJS calculation:
K/W
i
0.10
1
2
3
4
0.08
ZthJS
thJH
0.06
Rthi (K/W)
ti (s)
0.001
0.004
0.027
0.082
0.08
0.024
0.112
0.464
0.04
0.02
0.00
0.001
0.01
0.1
1s
10
t
814
Fig. 7 Transient thermal impedance junction to heatsink
© 2000 IXYS All rights reserved
2-2
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