PHILIPS BRY56A Programmable unijunction transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
BRY56A
Programmable unijunction
transistor
Product specification
1999 May 31
Philips Semiconductors
Product specification
Programmable unijunction transistor
DESCRIPTION
BRY56A
PINNING
Planar PNPN trigger device in a
TO-92; SOT54 plastic package.
PIN
APPLICATIONS
DESCRIPTION
1
gate
2
anode
3
cathode
• Switching applications such as:
– Motor control
anode
a
handbook, halfpage
– Oscillators
– Relay replacement
book, halfpage
1
– Timers
2
3
g
gate
– Pulse shapers, etc.
MSB033
k
cathode
MGL167
Fig.1 Simplified outline (TO-92; SOT54) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VGA
gate-anode voltage
−
70
V
IA(AV)
average anode current
−
175
mA
IARM
repetitive peak anode current
−
2.5
A
IASM
non-repetitive peak anode current tp = 10 µs
−
3
A
dlA/dt
rate of rise of anode current
IA ≤ 2.5 A
−
20
A/µs
Ptot
total power dissipation
Tamb ≤ 75 °C
−
300
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
1999 May 31
tp = 10 µs; δ = 0.01
2
Philips Semiconductors
Product specification
Programmable unijunction transistor
BRY56A
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
VALUE
UNIT
250
K/W
thermal resistance from junction to ambient in free air
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
peak point current
IP
MIN.
TYP.
MAX.
UNIT
VS = 10 V; RG = 10 kΩ; see Fig.7
−
−
200
nA
VS = 10 V; RG = 100 kΩ; see Fig.7
−
−
60
nA
−
−
µA
−
IV
valley point current
VS = 10 V; RG = 10 kΩ; see Fig.7
2
VS = 10 V; RG = 100 kΩ; see Fig.7
1
−
Voffset
offset voltage
typical curve; IA = 0; see Fig.7
−
VP − VS −
V
IGAO
gate-anode leakage current
IK = 0; VGA = 70 V; see Fig.5
−
−
10
nA
µA
IGKS
gate-cathode leakage current VAK = 0; VKG = 70 V; see Fig.6
−
−
100
nA
VAK
anode-cathode voltage
IA = 100 mA
−
−
1.4
V
VOM
peak output voltage
VAA = 20 V; C = 10 nF;
see Figs 8 and 9
6
−
−
V
tr
rise time
VAA = 20 V; C = 10 nF; see Fig.9
−
−
80
ns
handbook, full pagewidth
+40 V
BZY88C8V2
5 kΩ
A
R1
100 µF
BY206
(2x)
40 K
750
Ω
RG
1 nF
D.U.T
10 kΩ
20 Ω
VS
osc.
MBK189
IP and IV determined by value of R1.
1
R1 = ---- ; i.e. maximum voltage drop over R1 = 1 V.
IA
Internal resistance of oscilloscope = 10 MΩ.
Fig.2 Measuring circuit for peak and valley point currents.
1999 May 31
3
Philips Semiconductors
Product specification
Programmable unijunction transistor
BRY56A
+VB
handbook, halfpage
handbook, halfpage
IA
RG =
R2
DUT
VAK
DUT
R1
VS =
R1 R2
R1 R2
R1
R1 R2
VB
MBB699
MEA141
Fig.4
Fig.3 BRY56A with ‘program’ resistors R1 and R2.
handbook, halfpage
DUT
VGA
VGK
MBB696
MBB697
Fig.5
Equivalent test circuit for gate-anode
leakage current.
1999 May 31
I GKS
handbook, halfpage
DUT
I GAO
Equivalent test circuit for characteristics
testing.
Fig.6
4
Equivalent test circuit for gate-cathode
leakage current.
Philips Semiconductors
Product specification
Programmable unijunction transistor
BRY56A
IA
handbook, halfpage
VAA
handbook, halfpage
1.5
MΩ
16 kΩ
DUT
C
I(V)
VO
20 Ω
27 kΩ
I(P)
VS V(P)
VAK
MBB698
MEA143
Fig.7 Offset voltage.
handbook, halfpage
Fig.8 Test circuit for peak output voltage.
MBB701
VO
VOM
90 %
10 %
tr
time
Fig.9 Peak output voltage.
1999 May 31
5
Philips Semiconductors
Product specification
Programmable unijunction transistor
BRY56A
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
c
E
d
A
L
b
1
e1
2
D
e
3
b1
L1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
b1
c
D
d
E
e
e1
L
L1(1)
mm
5.2
5.0
0.48
0.40
0.66
0.56
0.45
0.40
4.8
4.4
1.7
1.4
4.2
3.6
2.54
1.27
14.5
12.7
2.5
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
SOT54
1999 May 31
REFERENCES
IEC
JEDEC
EIAJ
TO-92
SC-43
6
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
Philips Semiconductors
Product specification
Programmable unijunction transistor
BRY56A
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 May 31
7
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© Philips Electronics N.V. 1999
SCA 65
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Printed in The Netherlands
115002/01/pp8
Date of release: 1999 May 31
Document order number:
9397 750 05969
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