Renesas H7N1004FM Silicon n-channel mosfet high-speed power switching Datasheet

Preliminary Datasheet
H7N1004FM
R07DS0209EJ0300
Rev.3.00
Feb 23, 2012
Silicon N-Channel MOSFET
High-Speed Power Switching
Features




Low on-resistance
RDS(on) = 25 m typ.
Low drive current
Available for 4.5 V gate drive
Outline
RENESAS Package code: PRSS0003AD-A
(Package name: TO-220FM )
2
D
1. Gate
2. Drain
3. Source
1G
1 2
3
S
3
Absolute Maximum Ratings
(Ta = 25C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Symbol
VDSS
VGSS
ID
ID (pulse)Note1
IDR
Note 3
IAP
EAR Note 3
Pch Note 2
Tch
Tstg
Value
100
20
25
100
25
15
22.5
25
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
C
C
Notes: 1. PW  10 s, duty cycle  1%
2. Value at Tc = 25C
3. Value at Tch = 25C, Rg  50 
R07DS0209EJ0300 Rev.3.00
Feb 23, 2012
Page 1 of 7
H7N1004FM
Preliminary
Electrical Characteristics
(Ta = 25C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Symbol
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(off)
Static drain to source on state
resistance
RDS(on)
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
|yfs|
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery
time
tf
VDF
trr
Min
100
20
—
—
1.5
—
—
20
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
25
30
35
2800
240
140
50
9
11
23
110
70
Max
—
—
10
10
2.5
35
45
—
—
—
—
—
—
—
—
—
—
Unit
V
V
A
A
V
m
m
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
—
—
—
9.5
0.89
45
—
—
—
ns
V
ns
Test conditions
ID = 10 mA, VGS = 0
IG = 100 A, VDS = 0
VGS = 16 V, VDS = 0
VDS = 100 V, VGS = 0
ID = 1 mA, VDS = 10 V Note 4
ID = 12.5 A, VGS = 10 V Note 4
ID = 12.5 A, VGS = 4.5 V Note 4
ID = 12.5 A, VGS = 10 V Note 4
VDS = 10 V
VGS = 0
f = 1 MHz
VDD = 50 V
VGS = 10 V
ID = 25 A
VGS = 10 V, ID = 12.5 A
RL = 2.4 
Rg = 4.7 
IF = 25 A, VGS = 0
IF = 25 A, VGS = 0
diF/dt = 100 A/s
Notes: 4. Pulse test
R07DS0209EJ0300 Rev.3.00
Feb 23, 2012
Page 2 of 7
H7N1004FM
Preliminary
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
1000
(A)
300
ID
30
10
100
20
10
0
0
50
100
150
Case Temperature
200
30
3
1
0.3 Operation in
0.1 this area is
limited by RDS (on)
0.03
Ta = 25°C
0.01
0.1 0.3 1
3 10
Tc (°C)
30 100 300 1000
VDS (V)
50
VDS = 10 V
Pulse Test
4V
30
40
30
3.5 V
20
10
Drain Current
Drain Current
μs
μs
Typical Transfer Characteristics
Pulse Test
40
0
Drain to Source Voltage
ID (A)
ID (A)
10 V
6V
m
10
s
=1
0m
D
(T C O
s(
c = pe
1s
ho
25 rati
t)
°C on
)
Typical Output Characteristics
50
1
PW
10
Drain Current
Channel Dissipation
Pch (W)
40
20
Tc = 75°C
10
25°C
VGS = 3 V
–25°C
0
0
0
2
4
6
Drain to Source Voltage
8
10
0
VDS (V)
0.8
0.6
ID = 20 A
0.4
10 A
0.2
5A
0
0
5
10
Gate to Source Voltage
R07DS0209EJ0300 Rev.3.00
Feb 23, 2012
15
20
VGS (V)
3
4
5
VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source On State Resistance
RDS (on) (mΩ)
Drain to Source Saturation Voltage
VDS (on) (V)
Pulse Test
2
Gate to Source Voltage
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
1.0
1
500
Pulse Test
200
100
50
VGS = 4.5 V
20
10 V
10
5
1
2
5
10
Drain Current
20
50
100
ID (A)
Page 3 of 7
Preliminary
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
RDS (on) (mΩ)
H7N1004FM
100
Pulse Test
80
ID = 20 A
5, 10 A
60
VGS = 4.5 V
40
ID = 20 A
5, 10 A
20
VGS = 10 V
0
–25
0
25
50
75
100 125 150
Case Temperature
Tc
100
Tc = –25°C
10
25°C
1
75°C
0.1
VDS = 10 V
Pulse Test
0.01
0.01
5000
Capacitance C (pF)
Reverse Recovery Time trr (ns)
10000
50
20
di / dt = 100 A / μs
VGS = 0, Ta = 25°C
Ciss
2000
1000
500
Coss
200
100
50
Crss
VGS = 0
f = 1 MHz
20
10
2
5
Drain Current
10 20
50 100
0
IDR (A)
120
VDS
VDD = 25 V
50 V
100 V
12
80
8
40
4
VDD = 100 V
50 V
25 V
0
0
20
40
Gate Charge
R07DS0209EJ0300 Rev.3.00
Feb 23, 2012
60
80
Qg (nc)
30
40
50
0
100
1000
Switching Time t (ns)
16
160
VGS (V)
VGS
Gate to Source Voltage
ID = 25 A
20
Switching Characteristics
20
200
10
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
(V)
100
Typical Capacitance vs.
Drain to Source Voltage
100
10
0.1 0.2 0.5 1
VDS
10
Drain Current ID (A)
(°C)
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source Voltage
1
0.1
VGS = 10 V, VDD = 30 V
PW = 5 μs, duty ≤ 1 %
300 RG = 4.7 Ω
tr
100
td(off)
td(on)
30
tf
10
3
1
0.1
0.3
1
3
Drain Current
10
30
100
ID (A)
Page 4 of 7
H7N1004FM
Preliminary
Maximum Avalanche Energy vs.
Channel Temperature Derating
Repetitive Avalanche Energy EAR (mJ)
Reverse Drain Current
IDR
(A)
Reverse Drain Current vs.
Source to Drain Voltage
50
40
30
10 V
5V
20
VGS = 0, –5 V
10
Pulse Test
0
0
0.4
0.8
1.2
1.6
Source to Drain Voltage
2.0
40
IAP = 15 A
VDD = 50 V
duty < 0.1 %
Rg ≥ 50 Ω
32
24
16
8
0
25
VSD (V)
50
75
100
125
150
Channel Temperature Tch (°C)
Normalized Transient Thermal Impedance γ s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
D=1
1
0.5
0.3
0.2
0.1
0.1
0.05
θch – c (t) = γ s (t) • θch – c
0.02
0.03
θch – c = 5°C/W, Tc = 25°C
0.01
0.01
hot
1s
pu
lse
PDM
D=
PW
T
PW
0.003
T
0.001
10 μ
100 μ
1m
10 m
100 m
10
1
Pulse Width PW (S)
Avalanche Test Circuit
VDS
Monitor
Avalanche Waveform
L
EAR =
1
• L • IAP2 •
2
VDSS
VDSS – VDD
IAP
Monitor
Rg
V(BR)DSS
IAP
D.U.T
VDD
VDS
ID
Vin
15 V
50 Ω
0
R07DS0209EJ0300 Rev.3.00
Feb 23, 2012
VDD
Page 5 of 7
H7N1004FM
Preliminary
Switching Time Test Circuit
Switching Time Waveform
90%
Vout
Monitor
Vin Monitor
D.U.T.
Rg
Vin
Vout
Vin
10 V
VDS
= 30 V
10%
10%
90%
td(on)
R07DS0209EJ0300 Rev.3.00
Feb 23, 2012
10%
RL
tr
90%
td(off)
tf
Page 6 of 7
H7N1004FM
Preliminary
Package Dimensions
Package Name
TO-220FM
JEITA Package Code
SC-67
Previous Code
TO-220FM / TO-220FMV
RENESAS Code
PRSS0003AD-A
MASS[Typ.]
1.8g
10.0 ± 0.3
Unit: mm
2.8 ± 0.2
φ 3.2 ± 0.2
2.5 ± 0.2
4.45 ± 0.3
14.0 ± 1.0
5.0 ± 0.3
1.2 ± 0.2
1.4 ± 0.2
2.0 ± 0.3
12.0 ± 0.3
17.0 ± 0.3
0.6
7.0 ± 0.3
2.5
0.7 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
0.5 ± 0.1
Ordering Information
Orderable Part Number
H7N1004FM-E
Quantity
600 pcs
R07DS0209EJ0300 Rev.3.00
Feb 23, 2012
Shipping Container
Box (Tube)
Page 7 of 7
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