Hamamatsu G8605-11 Ingaas pin photodiode Datasheet

PHOTODIODE
InGaAs PIN photodiode
G8605 series
Thermoelectrically cooled NIR (near infrared) detector with low noise and high-speed response
InGaAs PIN photodiodes have small terminal capacitance for high-speed response and also feature high shunt resistance and very low noise.
G8605 series of InGaAs PIN photodiodes are thermoelectrically cooled types that decrease the dark current to achieve high D*. One-stage (-10 ˚C)
and two-stage (-20 ˚C) thermoelectrically cooled types are provided.
Features
Applications
l High-speed response
l Low noise
l Various active area sizes available from φ1 to φ5 mm
l Optical power meter
l Water content analyzer
l Laser diode life test
Accessories (Optional)
l Preamp for InGaAs PIN photodiode
C4159-02
(High-speed type)
l Preamp for InGaAs PIN photodiode
C4159-03
(High sensitivity type)
l Heatsink for one-stage TE-cooled type A3179
l Heatsink for two-stage TE-cooled type A3179-01
l Temperature controller for TE-cooled type C1103-04
■ Specifications / Absolute maximum ratings
Type No.
G8605-11
G8605-12
G8605-13
G8605-15
G8605-21
G8605-22
G8605-23
G8605-25
Dim ensional
ou tlin e/
Package
W ind o w
m aterial *
Cooling
One-stage
TE-cooled
➀/K
TO-8
➁/K
Two-stage
TE-cooled
Active
area
(mm)
φ1
φ2
φ3
φ5
φ1
φ2
φ3
φ5
Thermistor
power
dissipation
(mW)
0.2
Absolute maximum ratings
TE-cooler Reverse Operating
Storage
allowable voltage temperature temperature
Topr
current
Tstg
VR Max.
(A)
(V)
(°C)
(°C)
5
5
1.5
5
2
-40 to +70
-55 to +85
5
5
1.0
5
2
■ Electrical and optical characteristics (Typ. unless otherwise noted)
Measurem ent
S pe ctra l P e ak
condition
respo nse sensitivity
Element ran ge w avelength
tem perature
λ
λp
Cut-off
Terminal
Shunt
D a rk curre nt freq ue ncy capacitance
re sista nce
D∗
fc
Ct
ID
Rsh
λ=λp
VR=1 V
VR=1 V
VR=1 V
Type No.
VR=10 mV
RL=50 Ω f=1 MHz
1.3 µ m λ=λp T yp . M ax.
(MHz)
(pF)
(°C)
(µm)
(µm) (A /W ) (A /W ) (n A ) (n A )
(cm ·H z 1/2 /W )
(MΩ)
G8605-11
0.07 0.35
18
150
1500
G8605-12
0.3 1.5
4
550
300
0.9 to 1.67
-10
2 × 1013
G8605-13
1
5
2
1000
100
G8605-15
2.5 12 .5
0.6
3500
30
1.55
0.9
0.95
G8605-21
0.03 0.15
18
150
3000
G8605-22
0.15 0.75
4
550
600
0.9 to 1.65
-20
3 × 1013
G8605-23
0.5 2.5
2
1000
200
G8605-25
0.6
3500
60
1.2
6
* Window material K: borosilicate glass with anti-reflective coating (optimized for 1.55 µm peak)
Photo
sensitivity
S
NEP
λ=λp
(W/Hz1/2)
5 × 10-15
1 × 10-14
2 × 10-14
3 × 10-14
3 × 10-15
7 × 10-15
1 × 10-14
2 × 10-14
1
InGaAs PIN photodiode
■ Spectral response
■ Photo sensitivity temperature characteristic
(Typ.)
0.5
0.8
1.0
1.2
1.4
1.6
1.8
(Typ. Ta=25 ˚C)
2
T=25 ˚C
T= -10 ˚C
T= -20 ˚C
TEMPERATURE COEFFICIENT (%/˚C)
PHOTO SENSITIVITY (A/W)
1
0.6
G8605 series
1
0
-1
0.8
2.0
1.0
WAVELENGTH (µm)
1.2
1.4
1.6
1.8
WAVELENGTH (µm)
KIRDB0184EA
KIRDB0042EA
Spectral response shifts towards the
short wavelength side when cooled.
One-stage TE-cooled type: λc=1.67 µm
Two-stage TE-cooled type: λc=1.65 µm
■ Photo sensitivity linearity
■ Dark current vs. reverse voltage
(Typ. Ta=25 ˚C, λ=1.3 µm, RL=2 Ω, VR=0 V)
102
(Typ. Ta=25 ˚C)
1 µA
100
G8605-11/-21
100 nA
G8605-13/-23
98
DARK CURRENT
RELATIVE SENSITIVITY (%)
G8605-15/-25
G8605-12/-22
96
94
G8605-13/-23
G8605-15/-25
92
2
4
6
G8605-12/-22
1 nA
G8605-11/-21
100 pA
90
0
10 nA
8
10
12
14
16
10 pA
0.01
0.1
1
10
100
REVERSE VOLTAGE (V)
INCIDENT LIGHT LEVEL (mW)
KIRDB0241EA
KIRDB0242EA
Applying a reverse voltage increases
dark current, but improves frequency
characteristics and output linearity.
2
InGaAs PIN photodiode
■ Terminal capacitance vs. reverse voltage
■ Shunt resistance vs. element temperature
(Typ. Ta=25 ˚C, f=1 MHz)
10 nF
G8605-13/-23
1 GΩ
1 nF
SHUNT RESISTANCE
TERMINAL CAPACITANCE
(Typ. VR=10 mV)
10 GΩ
G8605-15/-25
G8605-12/-22
100 pF
G8605 series
G8605-11/-21
10 pF
G8605-11/-21
100 MΩ
G8605-12/-22
10 MΩ
G8605-13/-23
G8605-15/-25
1 MΩ
1 pF
0.01
0.1
1
10
100 kΩ
-40
100
-20
0
20
40
60
80
ELEMENT TEMPERATURE (˚C)
REVERSE VOLTAGE (V)
KIRDB0243EA
KIRDB0244EA
In applications requiring high-speed
response, the lead length should be as
short as possible to minimize the terminal capacitance.
10
6
10
5
10
■ Cooling characteristics of TE-cooler
(Typ.)
40
ELEMENT TEMPERATURE (˚C)
RESISTANCE (Ω)
■ Thermistor temperature characteristic
4
103
-40
-20
0
20
ONE-STAGE
TE-COOLED TYPE
0
-20
TWO-STAGE
-40 TE-COOLED TYPE
-60
20
(Typ. Ta=25 ˚C, Thermal resistance of heatsink=3 ˚C/W)
0
0.4
0.8
1.2
1.6
CURRENT (A)
ELEMENT TEMPERATURE (˚C)
KIRDB0116EA
KIRDB0231EA
■ Current vs. voltage characteristics of TE-cooler
1.6
(Typ. Ta=25 ˚C, Thermal resistance of heatsink=3 ˚C/W)
1.4
CURRENT (A)
1.2
ONE-STAGE
TE-COOLED TYPE
1.0
0.8
0.6
TWO-STAGE
TE-COOLED TYPE
0.4
0.2
0
0
0.5
1.0
1.5
VOLTAGE (V)
KIRDB0115EA
3
InGaAs PIN photodiode
G8605 series
■ Dimensional outlines (unit: mm)
➀ G8605-11/-12/-13/-15
➁ G8605-21/-22/-23/-25
15.3 ± 0.2
15.3 ± 0.2
0.45
LEAD
10.2 ± 0.2
10.2 ± 0.2
DETECTOR (ANODE)
DETECTOR (CATHODE)
TE-COOLER (-)
TE-COOLER (+)
THERMISTOR
5.1 ± 0.2
DETECTOR (ANODE)
DETECTOR (CATHODE)
TE-COOLER (-)
TE-COOLER (+)
THERMISTOR
5.1 ± 0.2
5.1 ± 0.2
12 MIN.
0.45
LEAD
10 ± 0.2
6.4 ± 0.2
PHOTOSENSITIVE
SURFACE
12 MIN.
PHOTOSENSITIVE
SURFACE
4.4 ± 0.2
WINDOW
10 ± 0.2
6.7 ± 0.2
14 ± 0.2
WINDOW
10 ± 0.2
14 ± 0.2
5.1 ± 0.2
KIRDA0152EA
KIRDA0153EA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2001 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
4
Cat. No. KIRD1049E01
Apr. 2001 DN
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