IRFH8316PbF HEXFET® Power MOSFET VDS 30 ± 20 Vgs max RDS(on) max V V 2.95 (@VGS = 10V) (@VGS = 4.5V) 4.30 Qg typ 30.0 ID 50 (@Tc(Bottom) = 25°C) m nC i PQFN 5X6 mm A Applications Synchronous MOSFET for high frequency buck converters Features and Benefits Features Low Thermal Resistance to PCB (< 1.7°C/W) Low Profile (<1.2mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Consumer Qualification Orderable part number Package Type IRFH8316TRPBF IRFH8316TR2PBF PQFN 5mm x 6mm PQFN 5mm x 6mm Benefits Enable better thermal dissipation results in Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Standard Pack Form Quantity Tape and Reel 4000 Tape and Reel 400 Note Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C ID @ TC = 25°C IDM PD @TA = 25°C PD @TC(Bottom) = 25°C Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Power Dissipation Power Dissipation TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range g g c g Max. 30 ± 20 27 21 120 78 50 hi hi i 490 3.6 59 0.029 -55 to + 150 Units V A W W/°C °C Notes through are on page 9 1 www.irf.com © 2012 International Rectifier July 19, 2012 IRFH8316PbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS VDSS/TJ RDS(on) Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance VGS(th) VGS(th) IDSS Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance gfs Qg Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Min. Typ. Max. Units 30 ––– ––– ––– 1.2 ––– ––– ––– ––– ––– 69 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 21 2.40 3.40 1.7 -6.4 ––– ––– ––– ––– ––– 59 30.0 7.0 2.7 9.7 10.6 12.4 18 1.1 19 67 20 24 3610 740 390 ––– ––– 2.95 4.30 2.2 ––– 1 150 100 -100 ––– ––– 45.0 ––– ––– ––– ––– ––– ––– 1.7 ––– ––– ––– ––– ––– ––– ––– Conditions VGS = 0V, ID = 250μA V mV/°C Reference to 25°C, ID = 1.0mA VGS = 10V, ID = 20A m VGS = 4.5V, ID = 16A V VDS = VGS, ID = 50μA mV/°C VDS = 24V, VGS = 0V μA VDS = 24V, VGS = 0V, TJ = 125°C VGS = 20V nA VGS = -20V VDS = 10V, ID = 20A S nC VGS = 10V, VDS = 15V, ID = 20A e e VDS = 15V VGS = 4.5V ID = 20A nC VDS = 16V, VGS = 0V nC VDD = 15V, VGS = 4.5V ID = 20A RG=1.8 ns VGS = 0V VDS = 10V ƒ = 1.0MHz pF Avalanche Characteristics Parameter Single Pulse Avalanche Energy Avalanche Current EAS IAR c Typ. ––– ––– d Max. 160 20 Units mJ A Diode Characteristics Parameter IS Continuous Source Current ISM (Body Diode) Pulsed Source Current VSD trr (Body Diode) Diode Forward Voltage Reverse Recovery Time Qrr ton Reverse Recovery Charge Forward Turn-On Time Min. c Typ. Max. Units i ––– ––– 50 ––– ––– 490 ––– ––– ––– 14 1.0 21 Conditions MOSFET symbol A V ns showing the integral reverse D G p-n junction diode. TJ = 25°C, IS = 20A, VGS = 0V TJ = 25°C, IF = 20A, VDD = 15V ––– 18 27 nC di/dt = 380A/μs Time is dominated by parasitic Inductance S e e Thermal Resistance RJC (Top) f Junction-to-Case f RJA Junction-to-Ambient RJC (Bottom) g Junction-to-Ambient g RJA (<10s) 2 Parameter Junction-to-Case www.irf.com © 2012 International Rectifier Typ. ––– ––– ––– ––– Max. Units 1.7 32 °C/W 35 22 July 19, 2012 IRFH8316PbF 1000 1000 100 BOTTOM 10 1 2.3V 100 BOTTOM 10 2.3V 60μs PULSE WIDTH 60μs PULSE WIDTH Tj = 25°C Tj = 150°C 1 0.1 0.1 1 10 0.1 100 Fig 1. Typical Output Characteristics 10 100 Fig 2. Typical Output Characteristics 1.8 RDS(on) , Drain-to-Source On Resistance (Normalized) 1000 ID, Drain-to-Source Current(A) 1 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) 100 TJ = 150°C 10 TJ = 25°C 1 VDS = 15V 60μs PULSE WIDTH ID = 20A VGS = 10V 1.6 1.4 1.2 1.0 0.8 0.6 0.1 1 2 3 4 5 6 -60 -40 -20 0 7 Fig 4. Normalized On-Resistance vs. Temperature Fig 3. Typical Transfer Characteristics 100000 14 VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd 10000 Ciss 1000 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) VGS 10V 5.0V 4.5V 3.5V 3.0V 2.8V 2.5V 2.3V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 10V 5.0V 4.5V 3.5V 3.0V 2.8V 2.5V 2.3V Coss Crss ID= 20A 12 VDS= 24V VDS= 15V VDS= 6.0V 10 8 6 4 2 0 100 0 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs.Drain-to-Source Voltage 3 www.irf.com © 2012 International Rectifier 10 20 30 40 50 60 70 80 QG Total Gate Charge (nC) Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage July 19, 2012 IRFH8316PbF 10000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 TJ = 150°C 100 TJ = 25°C 10 OPERATION IN THIS AREA LIMITED BY RDS(on) 1000 1msec 100 10 Limited By Source Bonding Technology i 1 10msec Tc = 25°C Tj = 150°C Single Pulse VGS = 0V DC 0.1 1.0 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 1 10 100 VDS , Drain-to-Source Voltage (V) VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 2.4 140 Limited By Source Bonding Technology VGS(th), Gate threshold Voltage (V) i 120 ID, Drain Current (A) 100μsec 100 80 60 40 20 0 25 50 75 100 125 2.2 2.0 1.8 1.6 1.4 ID = 50μA 1.2 ID = 1.0mA ID = 250μA ID = 1.0A 1.0 0.8 0.6 150 -75 -50 -25 TC, Case Temperature (°C) 0 25 50 75 100 125 150 TJ , Temperature ( °C ) Fig 9. Maximum Drain Current vs. Case (Bottom) Temperature Fig 10. Threshold Voltage vs. Temperature Thermal Response ( ZthJC ) 10 1 D = 0.50 0.20 0.10 0.05 0.1 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom) 4 www.irf.com © 2012 International Rectifier July 19, 2012 10 700 EAS , Single Pulse Avalanche Energy (mJ) RDS(on), Drain-to -Source On Resistance (m) IRFH8316PbF ID = 20A 8 6 TJ = 125°C 4 TJ = 25°C 2 ID 5.6A 8.6A BOTTOM 20A 600 TOP 500 400 300 200 100 0 0 5 10 15 20 25 50 75 100 125 150 Starting TJ , Junction Temperature (°C) VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage Fig 13. Maximum Avalanche Energy vs. Drain Current V(BR)DSS tp 15V DRIVER L VDS D.U.T RG + V - DD IAS 20V A Fig 14a. Unclamped Inductive Test Circuit RD VDS VDS D.U.T. RG + -VDD V10V GS Pulse Width µs Duty Factor Fig 15a. Switching Time Test Circuit www.irf.com Fig 14b. Unclamped Inductive Waveforms 90% VGS 5 I AS 0.01 tp © 2012 International Rectifier 10% VGS td(on) tr td(off) tf Fig 15b. Switching Time Waveforms July 19, 2012 IRFH8316PbF D.U.T Driver Gate Drive + - - * D.U.T. ISD Waveform Reverse Recovery Current + RG dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test P.W. Period VGS=10V Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - D= Period P.W. + V DD + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent ISD Ripple 5% * VGS = 5V for Logic Level Devices Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Id Vds Vgs L DUT 0 1K VCC S Vgs(th) Qgs1 Qgs2 Fig 17. Gate Charge Test Circuit 6 www.irf.com © 2012 International Rectifier Qgd Qgodr Fig 18. Gate Charge Waveform July 19, 2012 IRFH8316PbF PQFN 5x6 Outline "E" Package Details For footprint and stencil design recommendations, please refer to application note AN-1154 at http://www.irf.com/technical-info/appnotes/an-1154.pdf PQFN 5x6 Outline "E" Part Marking INTERNATIONAL RECTIFIER LOGO DATE CODE ASSEMBLY SITE CODE (Per SCOP 200-002) PIN 1 IDENTIFIER XXXX XYWWX XXXXX PART NUMBER (“4 or 5 digits”) MARKING CODE (Per Marking Spec) LOT CODE (Eng Mode - Min last 4 digits of EATI#) (Prod Mode - 4 digits of SPN code) Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 7 www.irf.com © 2012 International Rectifier July 19, 2012 IRFH8316PbF PQFN 5x6 Outline "E" Tape and Reel NOTE: Controlling dimensions in mm Std reel quantity is 4000 parts. REEL DIMENSIONS STANDARD OPTION (QTY 4000) TR1 OPTION (QTY 400) METRIC METRIC IMPERIAL IMPERIAL MIN MIN MAX CODE MIN MIN MAX MAX MAX A 6.988 12.972 7.028 329.5 330.5 178.5 13.011 177.5 B 0.823 0.823 0.846 20.9 20.9 0.846 21.5 21.5 C 0.520 0.504 0.543 12.8 13.8 13.5 13.2 0.532 D 0.075 0.067 0.091 0.091 1.7 2.3 2.3 1.9 E 2.350 3.819 2.598 97 66 99 65 3.898 F Ref 12 17.4 Ref 0.512 G 0.512 0.571 13 13 0.571 14.5 14.5 8 www.irf.com © 2012 International Rectifier July 19, 2012 IRFH8316PbF Qualification information† Cons umer Qualification level (per JE DE C JE S D47F Moisture Sensitivity Level PQFN 5mm x 6mm RoHS compliant †† ††† guidelines ) MS L1 ††† (per JE DE C J-S T D-020D Yes ) Qualification standards can be found at International Rectifiers web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.796mH, RG = 50, IAS = 20A. Pulse width 400µs; duty cycle 2%. R is measured at TJ of approximately 90°C. When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material. Calculated continuous current based on maximum allowable junction temperature. Current is limited to 50A by source bonding technology. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 03/2012 9 www.irf.com © 2012 International Rectifier July 19, 2012