BC846-8 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N ) Features ● Ideally suited for automatic insertion ● For Switching and AF Amplifier Applications SOT- 23 Marking: ● BC846A=1A;BC846B=1B; ● BC847A=1E;BC847B=1F;BC847C=1G; ● BC848A=1J;BC848B=1K;BC848C=1L; C B Item Collector-Base Voltage Collector-Emitter Voltage BC846 BC847 BC848 BC846 BC847 BC848 Emitter-Base Voltage Symbol Unit VCBO V Conditions E Value 80 50 30 VCEO V 65 45 30 VEBO V 6 Collector Current IC A -0.1 Total Device Dissipation PC W 0.2 RΘJA ℃/W 625 Junction Temperature Tj ℃ 150 Storage Temperature TSTG ℃ -55 to +150 Thermal Resistance From Junction To Ambient High Diode Semiconductor 1 Electrical Characteristics (TA=25℃ unless otherwise noted) Symbol Parameter Collector-base breakdown voltage T est conditions BC846 BC847 IC= 10µA, IE=0 Collector cut-off current IC= 10mA, IB=0 VEBO IE= 10µA, IC=0 Collector cut-off current ICBO BC846 VCE=60 V , IB=0 ICEO BC848 DC current gain VCE=45 V , IB=0 V 0.1 μA 0.1 μA 0.1 μA VCE=30 V , IB=0 IEBO VEB=5 V , IC=0 hFE VCE= 5V, IC= 2mA BC846A,847A,848A BC846B,847B,848B V 6 VCB=50 V , IE=0 VCB=30 V , IE=0 Emitter cut-off current 45 VCB=70 V , IE=0 BC848 BC847 V 50 30 BC846 BC847 Unit 65 VCEO BC848 Emitter-base breakdown voltage Max 30 BC846 BC847 Typ 80 VCBO BC848 Collector-emitter breakdown voltage Min BC847C,BC848C 110 220 200 450 420 800 Collector-emitter saturation voltage VCE(sat) IC=100mA, IB= 5mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=100mA, IB= 5mA 1.1 V Transition frequency Collector output capacitance fT Cob VCE= 5 V, IC= 10mA f=100MHz VCB=10V,f=1MHz High Diode Semiconductor 100 MHz 4.5 pF 2 Typical Characteristics Static Characteristic (mA) 10 8 —— IC COMMON EMITTER VCE= 5V 1000 DC CURRENT GAIN IC 18uA 16uA 6 14uA 12uA 4 Ta=100℃ hFE 20uA COLLECTOR CURRENT hFE 3000 COMMON EMITTER Ta=25℃ 10uA 8uA Ta=25℃ 100 6uA 2 4uA IB=2uA 0 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE VBEsat —— 1000 6 10 7 1 VCEsat IC —— IC 100 (mA) IC 500 β=20 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) β=20 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) 10 COLLECTOR CURRENT VCE (V) 800 Ta=25℃ 600 Ta=100 ℃ 400 200 0.1 1 10 COLLECTOR CURREMT IC 100 —— IC Ta=100 ℃ 100 Ta=25℃ 10 0.1 100 1 10 COLLECTOR CURREMT (mA) VBE fT 500 100 (mA) IC T =2 5℃ a TRANSITION FREQUENCY 10 T =1 00℃ a COLLECTOR CURRENT IC fT (mA) (MHz) COMMON EMITTER VCE=5V —— IC 1 100 COMMON EMITTER VCE=5V Ta=25℃ 0.1 0.2 0.4 0.6 0.8 10 0.25 1.0 2 100 Cob/Cib —— VCB/VEB COLLECTOR POWER DISSIPATION PC (mW) Cib CAPACITANCE C (pF) Ta=25 ℃ Cob 1 0.1 0.1 6 PC 250 f=1MHz IE=0/IC=0 10 4 8 COLLECTOR CURRENT BASE-EMMITER VOLTAGE VBE (V) —— IC 10 12 125 150 (mA) Ta 200 150 100 50 0 1 10 REVERSE VOLTAGE V (V) 30 0 25 50 75 AMBIENT TEMPERATURE High Diode Semiconductor 100 Ta (℃ ) 3 SOT-23 Package Outline Dimensions SOT-23 Suggested Pad Layout JSHD JSHD High Diode Semiconductor 4 Reel Taping Specifications For Surface Mount Devices-SOT-23 30 High Diode Semiconductor 5