NTE NTE2562 Silicon complementary transistors high current switch Datasheet

NTE2562 (NPN) & NTE2563 (PNP)
Silicon Complementary Transistors
High Current Switch
Description:
The NTE2562 (NPN) and NTE2563 (PNP) are silicon complementary transistors is a TO220 type
package designed for use as a high current switch. Typical application include relay drivers, high–
speed inverters, converters, etc.
Features:
D Low Collector–Emitter Saturation Voltage
D High Current Capacity
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Collector Dissipation, PC
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
ICBO
VCB = 40V, IE = 0
–
–
0.1
mA
Emitter Cutoff Current
IEBO
VEB = 4V, IC = 0
–
–
0.1
mA
DC Current Gain
hFE
VCE = 2V, IC = 1A
100
–
200
VCE = 2V, IC = 6A
30
–
–
VCE = 5V, IC = 1A
–
120
–
Current Gain–Bandwidth Product
fT
MHz
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Collector–Emitter Saturation Voltage
NTE2562
VCE(sat)
Test Conditions
IC = 5A, IB = 0.25A
NTE2563
Min
Typ
Max
Unit
–
–
0.4
V
–
–
0.5
V
Collector–Base Breakdown Voltage
V(BR)CBO IC = 1mA, IE = 0
60
–
–
V
Collector–Emitter Breakdown Voltage
V(BR)CEO IC = 1mA, RBE = ∞
30
–
–
V
Emitter–Base Breakdown Voltage
V(BR)EBO IE = 1mA, IC = 0
6
–
–
V
–
0.2
–
µs
–
0.1
–
µs
–
0.5
–
µs
–
0.3
–
µs
–
0.03
–
µs
Turn–On Time
NTE2562
ton
VCC = 10V, VBE = –5V,
10IB1 = –10IB2 = IC = 5A,
Pulse Width = 20µs,
Duty Cycle = 1%
NTE2563
Storage Time
NTE2562
tstg
NTE2563
Fall Time
tf
.402 (10.2) Max
.173 (4.4) Max
.224 (5.7) Max
.122 (3.1)
Dia
.114 (2.9) Max
.295
(7.5)
.165
(4.2)
.669
(17.0)
Max
B
C
E
.531
(13.5)
Min
.100 (2.54)
.059 (1.5) Max
NOTE: Tab is isolated
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